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University of Illinois – Urbana-Champaign
1.
Garg, Akash.
Photoluminescence Characterization of Patterned Quantum dots and Inverse Quantum dots.
Degree: MS, 1200, 2011, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/18287 
► The ever increasing demand for oil and its limited supply have forced us to look for alternate sources of energy. Solar energy offers a cheap,…
(more)
▼ The ever increasing demand for oil and its limited supply have forced us to look for alternate sources of energy. Solar energy offers a cheap, alternate form of energy. The efficiency of a solar cell is set by the Shockley-Queisser limit and is currently very low. New techniques to increase the efficiency of solar cells are being explored. Quantum dots and inverse quantum dots are promising future ways to increase the efficiency of solar cells through multiple exciton generation. In this thesis, the fabrication and characterization of defect-free quantum dots and anti-dots are discussed.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">
Coleman,
James J. (advisor).
Subjects/Keywords: Solar Cell; Quantum dots; Nanopore
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APA (6th Edition):
Garg, A. (2011). Photoluminescence Characterization of Patterned Quantum dots and Inverse Quantum dots. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18287
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Garg, Akash. “Photoluminescence Characterization of Patterned Quantum dots and Inverse Quantum dots.” 2011. Thesis, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/18287.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Garg, Akash. “Photoluminescence Characterization of Patterned Quantum dots and Inverse Quantum dots.” 2011. Web. 14 Apr 2021.
Vancouver:
Garg A. Photoluminescence Characterization of Patterned Quantum dots and Inverse Quantum dots. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2011. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/18287.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Garg A. Photoluminescence Characterization of Patterned Quantum dots and Inverse Quantum dots. [Thesis]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18287
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
University of Illinois – Urbana-Champaign
2.
Dias, Neville L.
Patterned zero-dimensional nanostructures: fabrication and characterization.
Degree: PhD, 1200, 2012, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/29771
► Due to the advantages arising from low-dimensional electronic systems, considerable effort has been put into the use of quantum dots and wires as the active…
(more)
▼ Due to the advantages arising from low-dimensional electronic systems, considerable effort has been put into the use of quantum dots and wires as the active media in optoelectronic devices. The realization of quantum dot based devices has been plagued with numerous obstacles. Conventional quantum dots are formed by strain-driven self-assembly. The stochastic nature of the process results in a distribution of dot sizes. If a device is composed of more than
one quantum dot, the issue of uniformity becomes critical. Even if the device has only one quantum dot, uniformity is essential to obtain reproducible characteristics across multiple
devices. Thus, the geometrical parameters of a quantum dot, such as shape and size as well as the
chemical composition, need to be controlled.
In this work, nanoscale selective area metal-organic chemical vapor deposition (MOCVD) has been used to define InAs dot nucleation sites with highly ordered dot-to-dot pitches down to 80 nm corresponding to densities greater than 10^
10 cm-2, which are among the highest reported for site-defined dots. The fabrication approach avoids modification of the underlying surface,
allowing for easier integration into a variety of devices. Patterning of an oxide film by electron
beam lithography also allows for creation of arbitrary closely packed arrangements of quantum
dots for novel device designs. The resulting quantum dot array has the potential to be used as a
template for fabricating multi-stack structures for use in laser and photodetector applications.
Although nano-fabrication methods impose a degree of determinism on the quantum dot
size, the lack of coupling between individual dots in an array structure coupled with the size
variation is the primary cause for inhomogeneous broadening in quantum dot based devices. In
an attempt to address broadening in quantum dots, the nanopore active layer was proposed. The
nanopore is in essence an inverse quantum dot structure consisting of a periodically perforated quantum well that has been filled with a higher bandgap material. In the limit of small pores or
large lattice spacing, the nanopore electronic properties approach those of a quantum well. At the
other extreme, the nanopore behaves like a quantum dot. Thus the novelty in the nanopore active
layer is that it presents an opportunity to design devices covering the continuum between fully
three-dimensionally confined quantum dots and one-dimensionally confined quantum wells.
The in-plane periodicity results in miniband formation due to resonant scattering.
Theoretical calculations of the intersubband scattering rate in nanopore lattices predict decreased
intersubband scattering rates. This is due to the reduced overlap between in-plane components of
the initial and final wavefunctions.
We conducted a photoluminescence (PL) study of nanopore lattices as a function of pore
diameter while keeping the …
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">
Coleman,
James J. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Choquette%2C%20Kent%20D.%22%29&pagesize-30">Choquette, Kent D. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Rosenbaum%2C%20Elyse%22%29&pagesize-30">Rosenbaum, Elyse (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Li%2C%20Xiuling%22%29&pagesize-30">Li, Xiuling (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Bryce%2C%20Catrina%22%29&pagesize-30">Bryce, Catrina (committee member).
Subjects/Keywords: quantum dots; nanopores
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APA (6th Edition):
Dias, N. L. (2012). Patterned zero-dimensional nanostructures: fabrication and characterization. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/29771
Chicago Manual of Style (16th Edition):
Dias, Neville L. “Patterned zero-dimensional nanostructures: fabrication and characterization.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/29771.
MLA Handbook (7th Edition):
Dias, Neville L. “Patterned zero-dimensional nanostructures: fabrication and characterization.” 2012. Web. 14 Apr 2021.
Vancouver:
Dias NL. Patterned zero-dimensional nanostructures: fabrication and characterization. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/29771.
Council of Science Editors:
Dias NL. Patterned zero-dimensional nanostructures: fabrication and characterization. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/29771
University of Illinois – Urbana-Champaign
3.
Dowdy, Ryan S.
Planar GaAs nanowire arrays for nanoelectronics: controlled growth, doping, characterization, and devices.
Degree: PhD, 1200, 2013, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/44497
► The Vapor-Liquid-Solid (VLS) mechanism is a bottom-up approach to produce one-dimensional semiconductor structures, or nanowires. VLS nanowires are formed via a chemical or physical deposition…
(more)
▼ The Vapor-Liquid-Solid (VLS) mechanism is a bottom-up approach to produce one-dimensional semiconductor structures, or nanowires. VLS nanowires are formed via a chemical or physical deposition process, where a metallic nanoparticle (seed) facilitates the growth. Nanowire growth diameter is strongly correlated to seed size, therefore top-down patterning can control site location and diameter of nanowire growth. Nanowires are sought after for their potential use as a manageable way produce small dimensioned semiconductor features without the need of expensive lithographic techniques.
VLS nanowires commonly grow out-of-plane with respect to their growth substrate, resulting in difficulty with integrating VLS nanowires into existing device processing which is intended for planar geometries. Nanowires are typically removed from the substrate, which requires painstaking and uneconomical methods to pattern and align the nanowires. Planar nanowires are a potential solution to this issue; they grow in-plane on the substrate surface, epitaxially attached along its entire axis. Planar nanowires, as is, can be integrated into any preexisting planar semiconductor process, combining the advantages of nanowires with increased manufacturability.
In this dissertation, planar GaAs nanowires are grown using metal organic chemical vapor deposition (MOCVD) with Au nanoparticles as the liquid metal seed. Growth occurs across multiple substrates to elucidate the mechanism behind planar nanowire growth direction. Knowledge gained by observing planar nanowire growth is used to precisely control nanowire growth direction. Subsequently the doping of planar nanowires is explored and unique phenomena related to the p-type doping of planar nanowires are investigated and discussed.
The advantages of using planar nanowires are demonstrated through the controlled growth and doping of planar nanowires, and ultimately fabrication of electronic devices using conventional planar process techniques without the need for vertical nanowire processes or nanowire transferring. Devices are characterized and results are presented with discussion. The next steps for the future of planar nanowires are presented with initial results highlighting future applications and issues that must be solved.
Chapter 1 is an introduction to the history of Vapor-Liquid-Solid nanowires, and as well as a brief overview of the accomplishments of the field and highlighting unsolved issues.
Chapter 2 introduces the planar nanowire and discusses the motivation behind researching planar nanowires as a potential solution to the fundamental problems with vertical VLS nanowires.
Chapter 3 gives a short background into VLS nanowire growth and properties, introduction to MOCVD growth and reactor design, and material properties of GaAs, the semiconductor material of interest in this dissertation.
Chapter 4 presents the experimental details of planar GaAs nanowire growth on various substrates and the concept of projection theory to determined planar nanowire growth direction, as…
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Li%2C%20Xiuling%22%29&pagesize-30">Li, Xiuling (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Li%2C%20Xiuling%22%29&pagesize-30">Li, Xiuling (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Lyding%2C%20Joseph%20W.%22%29&pagesize-30">Lyding, Joseph W. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Wong%2C%20Martin%20D.F.%22%29&pagesize-30">Wong, Martin D.F. (committee member).
Subjects/Keywords: nanoelectronics; Vabor-Liquid-Solid (VLS) nanowire; planar GaAs; nanotechnology; nanostructure
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APA (6th Edition):
Dowdy, R. S. (2013). Planar GaAs nanowire arrays for nanoelectronics: controlled growth, doping, characterization, and devices. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/44497
Chicago Manual of Style (16th Edition):
Dowdy, Ryan S. “Planar GaAs nanowire arrays for nanoelectronics: controlled growth, doping, characterization, and devices.” 2013. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/44497.
MLA Handbook (7th Edition):
Dowdy, Ryan S. “Planar GaAs nanowire arrays for nanoelectronics: controlled growth, doping, characterization, and devices.” 2013. Web. 14 Apr 2021.
Vancouver:
Dowdy RS. Planar GaAs nanowire arrays for nanoelectronics: controlled growth, doping, characterization, and devices. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2013. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/44497.
Council of Science Editors:
Dowdy RS. Planar GaAs nanowire arrays for nanoelectronics: controlled growth, doping, characterization, and devices. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/44497
University of Illinois – Urbana-Champaign
4.
Liao, Albert.
Probing the upper limits of current flow in one-dimensional carbon conductors.
Degree: PhD, 1200, 2013, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/42181
► We use breakdown thermometry to study carbon nanotube (CNT) devices and graphene nanoribbons (GNRs) on SiO2 substrates. Experiments and modeling find the CNT-substrate thermal coupling…
(more)
▼ We use breakdown thermometry to study carbon nanotube (CNT) devices and graphene nanoribbons (GNRs) on SiO2 substrates. Experiments and modeling find the CNT-substrate thermal coupling scales proportionally to CNT diameter. Diffuse mismatch modeling (DMM) reveals the upper limit of thermal coupling ~0.7 WK 1m 1 for the largest diameter (3-4 nm) CNTs. Similarly, we extracted the GNR thermal conductivity (TC), ~80 (130) Wm 1K 1 at 20 (600) oC across our samples, dominated by phonons, with estimated <10% electronic contribution. The TC of GNRs is an order of magnitude lower than that of micron-sized graphene on SiO2, suggesting strong roles of edge and defect scattering, and the importance of thermal dissipation in small GNR devices.
We also compare the peak current density of metallic single-walled CNTs with GNRs. We find that as the “footprint” (width) between such a device and the underlying substrate decreases, heat dissipation becomes more efficient (for a given width), allowing for higher current densities. Because of their smaller dimensions and lack of edges, CNTs can carry larger current densities than GNRs, up to ~16 mA/μm for an m-SWNT with a diameter of ~0.7 nm versus ~3 mA/μm for a GNR having a width of ~15 nm. Such cur-rent densities are the highest possible in any diffusive conductor, to our knowledge.
We also study semiconducting and metallic single-walled CNTs under vacuum. Sem-iconducting single-wall CNTs under high electric field stress (~10 V/µm) display a re-markable current increase due to avalanche generation of free electrons and holes. Unlike in other materials, the avalanche process in such 1D quantum wires involves access to the third subband and is insensitive to temperature, but strongly dependent on diameter ~exp( 1/d 2). Comparison with a theoretical model yields a novel approach to obtain the inelastic optical phonon emission length, λOP,ems ≈ 15d nm.
We find that current in metallic single-walled CNTs does not typically saturate, unlike previous observations which suggested a maximum current of ~25 μA. In fact, at very high fields (>10 V/μm) the current continues to increase with a slope ~0.5–1 μA/V, allowing m-CNTs to reach currents well in excess of 25 μA. Subsequent modeling sug-gests that carriers tunnel from the contacts into higher subbands. This allows currents to reach ~30–35 μA, which correspond to a current density of ~9 mA/μm for diameters of ~1.2 nm.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Pop%2C%20Eric%22%29&pagesize-30">Pop, Eric (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Pop%2C%20Eric%22%29&pagesize-30">Pop, Eric (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22King%2C%20William%20P.%22%29&pagesize-30">King, William P. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Leburton%2C%20Jean-Pierre%22%29&pagesize-30">Leburton, Jean-Pierre (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Lyding%2C%20Joseph%20W.%22%29&pagesize-30">Lyding, Joseph W. (committee member).
Subjects/Keywords: Carbon Nanotubes; Graphene Nanoribbons; Joule Breakdown; Current Density; Impact Ionization; Zener Tunneling; Subband Transport
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APA ·
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APA (6th Edition):
Liao, A. (2013). Probing the upper limits of current flow in one-dimensional carbon conductors. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/42181
Chicago Manual of Style (16th Edition):
Liao, Albert. “Probing the upper limits of current flow in one-dimensional carbon conductors.” 2013. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/42181.
MLA Handbook (7th Edition):
Liao, Albert. “Probing the upper limits of current flow in one-dimensional carbon conductors.” 2013. Web. 14 Apr 2021.
Vancouver:
Liao A. Probing the upper limits of current flow in one-dimensional carbon conductors. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2013. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/42181.
Council of Science Editors:
Liao A. Probing the upper limits of current flow in one-dimensional carbon conductors. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/42181
University of Illinois – Urbana-Champaign
5.
Arbabi, Amir.
Selective mode coupling in microring resonators for single mode semiconductor lasers.
Degree: PhD, 1200, 2013, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/45565
► Single mode semiconductor laser diodes have many applications in optical communications, metrology and sensing. Edge-emitting single mode lasers commonly use distributed feedback structures, or narrowband…
(more)
▼ Single mode semiconductor laser diodes have many applications in optical communications, metrology and sensing. Edge-emitting single mode lasers commonly use distributed feedback structures, or narrowband reflectors such as distributed Bragg reflectors (DBRs) and sampled grating distributed Bragg reflectors (SGDBRs). Compact, narrowband reflectors with high reflectivities are of interest to replace the commonly used DBRs and SGDBRs. This thesis presents our work on the simulation, design, fabrication, and characterization of devices operating based on the coupling of degenerate modes of a microring resonator, and investigation of the possibility of using them for improving the performance of laser diodes. In particular, we demonstrate a new type of compact, narrowband, on-chip reflector realized by selectively coupling degenerate modes of a microring resonator.
For the simulation and design of reflective microring resonators, a fast and accurate analysis method is required. Conventional numerical methods for solving Maxwell's equations such as the finite difference time domain and the finite element method (FEM) provide accurate results but are computationally intense and are not suitable for the design of large 3D structures. We formulated a set of coupled mode equations that, combined with 2D FEM simulations, can provide a fast and accurate tool for the modeling and design of reflective microrings.
We developed fabrication processing recipes and fabricated passive reflective microrings on silicon substrates with a silicon nitride core and silicon dioxide cladding. Narrowband single wavelength reflectors were realized which are 70 times smaller than a conventional DBR with the same bandwidth. Compared to the conventional DBR, they have faster roll-off, and no side modes. The smaller footprint saves real estate, reduces tuning power and makes these devices attractive as in-line mirrors for low threshold narrow linewidth laser diodes.
Self-heating caused by material absorption changes the temperature and material refractive indices. The change in the refractive indices of the core and cladding of a reflective microring changes its reflection peak wavelength and the phase of its reflectivity. Therefore, fluctuations in the laser power lead to fluctuations in the phase of the reflectivity of the reflective microring and can affect the laser linewidth. We theoretically and experimentally studied the dynamics of self-heating in microring resonators and showed that the thermal dynamics can be modeled by a transfer function with two poles and one zero. A small signal model for reflection and transmission of a reflective microring was also derived and was validated by comparing it to measurement data.
To predict the characteristics of a semiconductor laser with a reflective microring mirror, we derived the small signal rate equations. These rate equations predict that the laser will be stable when it operates at moderate output powers on the long wavelength side of the reflection peak of a narrowband microring…
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Goddard%2C%20Lynford%20L.%22%29&pagesize-30">Goddard, Lynford L. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Goddard%2C%20Lynford%20L.%22%29&pagesize-30">Goddard, Lynford L. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Carney%2C%20Paul%20S.%22%29&pagesize-30">Carney, Paul S. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Dallesasse%2C%20John%20M.%22%29&pagesize-30">Dallesasse, John M. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Wasserman%2C%20Daniel%20M.%22%29&pagesize-30">Wasserman, Daniel M. (committee member).
Subjects/Keywords: On-chip mirrors; Semiconductor lasers; Micro-resonators; Monolithic integration
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APA (6th Edition):
Arbabi, A. (2013). Selective mode coupling in microring resonators for single mode semiconductor lasers. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/45565
Chicago Manual of Style (16th Edition):
Arbabi, Amir. “Selective mode coupling in microring resonators for single mode semiconductor lasers.” 2013. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/45565.
MLA Handbook (7th Edition):
Arbabi, Amir. “Selective mode coupling in microring resonators for single mode semiconductor lasers.” 2013. Web. 14 Apr 2021.
Vancouver:
Arbabi A. Selective mode coupling in microring resonators for single mode semiconductor lasers. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2013. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/45565.
Council of Science Editors:
Arbabi A. Selective mode coupling in microring resonators for single mode semiconductor lasers. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/45565
University of Illinois – Urbana-Champaign
6.
Zimmerman, Joseph W.
Studies of oxygen-helium discharges for use in electric oxygen-iodine lasers.
Degree: PhD, 4048, 2011, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/18343
► In recent work, the performance of the Electric Oxygen-Iodine Laser (ElectricOIL), developed in partnership by researchers at the University of Illinois and CU Aerospace, has…
(more)
▼ In recent work, the performance of the Electric Oxygen-Iodine Laser (ElectricOIL), developed in partnership by researchers at the
University of
Illinois and CU Aerospace, has been greatly improved through systematic study of various components of this new laser technology. One major contribution to the advancement of ElectricOIL technology has been the development of electric discharges capable of producing significant flow rates of the precursor electronically-excited molecular oxygen, O2(a). O2(a) serves as an energy reservoir in the laser system, pumping atomic iodine by near-resonant energy transfer producing gain and laser on the I(2P1/2) – > I(2P3/2) transition at 1315 nm. Initial experimental work with radio-frequency discharges showed the importance of controlling O-atom flow rates to reduce quenching losses of energy stored in O2(a), and determined proper selection of the helium diluent ratio and specific power deposition (power per O2 flow rate). Further experimental investigations with transverse capacitive radio-frequency discharges in O2/He/NO mixtures in the pressure range of 1-100 Torr and power range of 0.1-1.2 kW have indicated that O2(a) production is a strong function of geometry (transverse gap), excitation frequency, and pressure. These parameters along with gas flow mixture dictate the current density at which the discharge operates, and its modal characteristics (normal vs. abnormal, homogeneous vs. inhomogeneous). A key result is that to encourage efficient O2(a) production these parameters should be selected in order to promote a homogeneous (low current density) discharge. The discharge behavior is characterized using terminal current-voltage-characteristics, microwave interferometer measurements, and plasma emission intensity measurements. Numerous spectroscopic measurements of O2(a), oxygen atoms, and discharge excited states are made in order to describe the discharge performance dependent on various parameters. The influence of NO on O-atom flow rates and O2(a) production is investigated. Progress of laser power extraction since initial reports in 2005 is overviewed.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Solomon%2C%20Wayne%20C.%22%29&pagesize-30">Solomon, Wayne C. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Solomon%2C%20Wayne%20C.%22%29&pagesize-30">Solomon, Wayne C. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Elliott%2C%20Gregory%20S.%22%29&pagesize-30">Elliott, Gregory S. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Carroll%2C%20David%20L.%22%29&pagesize-30">Carroll, David L. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Burton%2C%20Rodney%20L.%22%29&pagesize-30">Burton, Rodney L. (committee member).
Subjects/Keywords: Electric OIL (EOIL); electric oxygen-iodine laser; transverse RF discharge; singlet delta oxygen
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APA (6th Edition):
Zimmerman, J. W. (2011). Studies of oxygen-helium discharges for use in electric oxygen-iodine lasers. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18343
Chicago Manual of Style (16th Edition):
Zimmerman, Joseph W. “Studies of oxygen-helium discharges for use in electric oxygen-iodine lasers.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/18343.
MLA Handbook (7th Edition):
Zimmerman, Joseph W. “Studies of oxygen-helium discharges for use in electric oxygen-iodine lasers.” 2011. Web. 14 Apr 2021.
Vancouver:
Zimmerman JW. Studies of oxygen-helium discharges for use in electric oxygen-iodine lasers. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/18343.
Council of Science Editors:
Zimmerman JW. Studies of oxygen-helium discharges for use in electric oxygen-iodine lasers. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18343
University of Illinois – Urbana-Champaign
7.
Nelson, Erik C.
Three-dimensional photonic crystal optoelectronics.
Degree: PhD, 0130, 2011, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/18551
► Photonic crystals are a class of synthetic materials which can control the absorption, emission and propagation of light to an unprecedented degree. In order to…
(more)
▼ Photonic crystals are a class of synthetic materials which can control the absorption, emission and propagation of light to an unprecedented degree. In order to fully utilize their properties defect must be added to photonic crystals to direct the flow of light, and light emitting structures must be incorporated that have the ability to be electrically pumped. In pursuit of these goals, the coupling of photons into 3D photonic crystals was studied for template-based fabrication methods. A complete lack of coupling was demonstrated for frequencies within and around the photonic band gap due to a surface resonance. The cause of this behavior was studied using experiment and finite-difference time-domain calculations, and a solution developed. The incorporation of defects was studied next and advanced to allow for simultaneous imaging and defect writing using a fluorescent dye and two-photon sensitive photoinitiator. Complete spatial alignment of defects with respect to photonic crystal lattice was achieved using this method.
While fabrication techniques such as phase mask lithography may be used to create a large variety of 3D structures, they are typically formed in SU-8 photoresist which cannot survive high temperature processes such as chemical vapor deposition. In order to make these structures accessible for future photonic crystal research a technique was developed to impart thermal stability to polymer templates using ceramic coatings deposited by atomic layer deposition and subsequent high-temperature growth of silicon was performed on the templates. Finally, a method was developed to create 3D photonic crystals from III-V semiconductors using a template based approach and metal-organic vapor phase epitaxy. The result of this work was the fabrication of 3D photonic crystals from high-quality GaAs and the demonstration of the first electrically driven 3D photonic crystal LED.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Braun%2C%20Paul%20V.%22%29&pagesize-30">Braun, Paul V. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Braun%2C%20Paul%20V.%22%29&pagesize-30">Braun, Paul V. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Cahill%2C%20David%20G.%22%29&pagesize-30">Cahill, David G. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Rogers%2C%20John%20A.%22%29&pagesize-30">Rogers, John A. (committee member).
Subjects/Keywords: photonic crystals; epitaxy; optoelectronics
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APA (6th Edition):
Nelson, E. C. (2011). Three-dimensional photonic crystal optoelectronics. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18551
Chicago Manual of Style (16th Edition):
Nelson, Erik C. “Three-dimensional photonic crystal optoelectronics.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/18551.
MLA Handbook (7th Edition):
Nelson, Erik C. “Three-dimensional photonic crystal optoelectronics.” 2011. Web. 14 Apr 2021.
Vancouver:
Nelson EC. Three-dimensional photonic crystal optoelectronics. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/18551.
Council of Science Editors:
Nelson EC. Three-dimensional photonic crystal optoelectronics. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18551
University of Illinois – Urbana-Champaign
8.
Li, Benben.
Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties.
Degree: PhD, 1200, 2012, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/34458
► A new configuration of plasma bipolar junction transistor (PBJT) based on an epitaxial wafer has been designed and fabricated. Its electrical properties and the collector…
(more)
▼ A new configuration of plasma bipolar junction transistor (PBJT) based on an epitaxial wafer has been designed and fabricated. Its electrical properties and the collector plasma densities are characterized using electrical and optical methods. Using this device as a platform, coupling of the electron-ion plasma (gas phase plasma) and the electron-hole plasma (semiconductor) in terms of secondary electron ejection into the gas phase was investigated experimentally and theoretically. Ion-assisted electronic reactions occur at the plasma/semiconductor interface and their overall contribution to regulating the coupling effect was formulated and evaluated. This work demonstrated that the electrical properties of a semiconductor surface can be controlled via means of a pn junction, whether interfaced with another solid state (to form a bipolar junction transistor) or a gas (to form a plasma bipolar junction transistor). This control ability is manifest in the resultant transistor domain as variable current small signal gain. The plasma and semiconductor interface can be further engineered to alter the electrical properties and thus change the resultant transistor behavior. A PBJT with a black silicon interface was designed and characterized. The application of the black silicon PBJT as a burst mode digital transistor was demonstrated experimentally.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Eden%2C%20James%20G.%22%29&pagesize-30">Eden,
James G. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Eden%2C%20James%20G.%22%29&pagesize-30">Eden, James G. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Carney%2C%20Paul%20S.%22%29&pagesize-30">Carney, Paul S. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Cunningham%2C%20Brian%20T.%22%29&pagesize-30">Cunningham, Brian T. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Ruzic%2C%20David%20N.%22%29&pagesize-30">Ruzic, David N. (committee member).
Subjects/Keywords: plasma bipolar junction transistor; microplasma; plasma transistor; plasma/semiconductor interface
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APA (6th Edition):
Li, B. (2012). Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/34458
Chicago Manual of Style (16th Edition):
Li, Benben. “Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/34458.
MLA Handbook (7th Edition):
Li, Benben. “Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties.” 2012. Web. 14 Apr 2021.
Vancouver:
Li B. Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/34458.
Council of Science Editors:
Li B. Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/34458
University of Illinois – Urbana-Champaign
9.
Kim, Jeong Dong.
Metal-assisted chemical etching of semiconductor nanostructures for electronic applications.
Degree: PhD, Electrical & Computer Engr, 2017, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/98179
► Metal-assisted Chemical Etching (MacEtch) is a robust and versatile top-down etching process which has the capability of overcoming the limits of conventional wet and dry…
(more)
▼ Metal-assisted Chemical Etching (MacEtch) is a robust and versatile top-down etching process which has the capability of overcoming the limits of conventional wet and dry etching. The advantage of producing anisotropic high aspect ratio micro- and nanostructures with the absence of ion induced surface damage has attracted tremendous attention in device applications such as light emitting diodes, solar cells, biosensors, supercapacitors, thermo-electrics, and 2.5 D and 3D transistors.
The detailed research on MacEtch has been accomplished by many researchers since its discovery by Li and Bohn in 2000. This includes MacEtch using different types of substrates (Si, GaAs, InP, GaP, GaN), metal catalysts (Au, Ag, Pt), substrate doping concentration, porosity and so on. Although there has been huge progress over the years, there are still obstacles which limit the application of MacEtch in commercial industries. First, there is still no experimental demonstration in the literature describing the simultaneous influence of carrier generation and mass transport in MacEtch. Second, noble metals used as the catalysts in MacEtch are not compatible with complementary metal-oxide-semiconductor (CMOS) technology due to the deep-level traps.
In this dissertation, sub-micron scale highly ordered crystalline silicon (c-Si) via array is demonstrated by MacEtch. The systematic study of etch rate as functions of catalyst diameter, pitch, and spacing experimentally demonstrates the simultaneous influence of carrier generation and mass transport in MacEtch. Next, sub-micron scale polycrystalline silicon (Poly-Si) via using a novel method called self-anchored catalyst (SAC) MacEtch is presented. The catalysts delamination and detour resulted by the inconsistent etching originated from polycrystalline grains and grain boundaries are minimized by physically anchoring the catalyst with the nanowires formed through the porous catalyst array. This SAC-MacEtch is also demonstrated in the large scale though c-Si via array and GaAs via array. Next, the first demonstration of CMOS-compatible titanium nitride (TiN) assisted chemical etching is presented. The conventional liquid phase and the vapor phase MacEtch are demonstrated to characterize the inverse MacEtch, and the modified vapor phase MacEtch is introduced to make the transition from inverse to forward MacEtch by enhancing the mass transport of etchant and byproducts. The length of the nanowire array produced by the mesh patterned TiN is characterized as the function of mesh dimension, etching temperature, and TiN thickness to analyze the etching characteristics. Next, GaP MacEtch with the Au catalyst using HF and H2O2 is presented. Inverse and forward Macetch are controlled by enhancing or limiting the MT.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Li%2C%20Xiuling%22%29&pagesize-30">Li, Xiuling (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Li%2C%20Xiuling%22%29&pagesize-30">Li, Xiuling (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J%22%29&pagesize-30">Coleman, James J (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Eden%2C%20James%20G%22%29&pagesize-30">Eden, James G (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Lyding%2C%20Joseph%20W%22%29&pagesize-30">Lyding, Joseph W (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Nam%2C%20SungWoo%22%29&pagesize-30">Nam, SungWoo (committee member).
Subjects/Keywords: Metal-assisted chemical etching; Silicon (Si) via array; Crystalline silicon (Si); Polycrystalline silicon (Si); Complementary metal-oxide-semiconductor (CMOS)-compatible catalyst; Titanium nitride
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APA ·
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MLA ·
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Export
to Zotero / EndNote / Reference
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APA (6th Edition):
Kim, J. D. (2017). Metal-assisted chemical etching of semiconductor nanostructures for electronic applications. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/98179
Chicago Manual of Style (16th Edition):
Kim, Jeong Dong. “Metal-assisted chemical etching of semiconductor nanostructures for electronic applications.” 2017. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/98179.
MLA Handbook (7th Edition):
Kim, Jeong Dong. “Metal-assisted chemical etching of semiconductor nanostructures for electronic applications.” 2017. Web. 14 Apr 2021.
Vancouver:
Kim JD. Metal-assisted chemical etching of semiconductor nanostructures for electronic applications. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2017. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/98179.
Council of Science Editors:
Kim JD. Metal-assisted chemical etching of semiconductor nanostructures for electronic applications. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2017. Available from: http://hdl.handle.net/2142/98179
10.
Young, Jonathan D.
Patterned quantum dots for solar cell applications.
Degree: MS, 1200, 2011, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/24408
► The theoretical efficiency limit of current solar cell technology, called the Shockley-Queisser limit, is about 30%. Research is underway to overcome this limit using new…
(more)
▼ The theoretical efficiency limit of current solar cell technology, called the Shockley-Queisser limit, is about 30%. Research is underway to overcome this limit using new types of nano-sized solar cells. Quantum dots offer the potential to increase the efficiency of solar cells through carrier multiplication. In this thesis, the theory behind carrier multiplication is discussed along with the fabrication and photoluminescence characterization of patterned quantum dots.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">
Coleman,
James J. (advisor).
Subjects/Keywords: Quantum dots; Solar Cells; Carrier Multiplication
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APA (6th Edition):
Young, J. D. (2011). Patterned quantum dots for solar cell applications. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/24408
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Young, Jonathan D. “Patterned quantum dots for solar cell applications.” 2011. Thesis, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/24408.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Young, Jonathan D. “Patterned quantum dots for solar cell applications.” 2011. Web. 14 Apr 2021.
Vancouver:
Young JD. Patterned quantum dots for solar cell applications. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2011. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/24408.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Young JD. Patterned quantum dots for solar cell applications. [Thesis]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/24408
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
11.
Kim, Jeong Dong.
III-V inverse quantum dots fabrication, characterization and application.
Degree: MS, 1200, 2013, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/45428
► The quantum dot offers carrier confinement in three dimensions. It is expected to improve performance of photonic devices. However, quantum dot fabrication still requires significant…
(more)
▼ The quantum dot offers carrier confinement in three dimensions. It is expected to improve performance of photonic devices. However, quantum dot fabrication still requires significant quality improvement such as high uniformity and location controllability to be commercialized.
In this thesis, the inverse quantum dot is presented as an alternative solution to enhance the quality of conventional quantum dots. The theoretical analysis shows that the inverse quantum dot can be tuned from quantum well to quantum dot like behavior by decreasing the pitch and increasing the diameter of pores. The inverse quantum dots are made with four basic processing steps: base structure growth, dielectric film patterning, etching, and regrowth. Electron beam lithography is used to increase the uniformity of the dots. Scanning electron microscopy shows the highly ordered pores compared to self-assembled quantum dots. The photoluminescence characterization shows the increased intensity compared to quantum well. Also, the quantization effect in the photoluminescence characterization shows the quantum dot like phenomenon.
Diblock copolymer lithography and anodic aluminum oxide transfer are used to fabricate large area dot patterning. In diblock copolymer lithography, pore diameter and pitch are approximately 17 nm and 37 nm respectively. In anodic aluminum oxide transfer, pore diameter and pitch were approximately 140 nm and 500 nm respectively. These two techniques indicate their capability in performing large area quantum dot and inverse quantum dot fabrication.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">
Coleman,
James J. (advisor).
Subjects/Keywords: Inverse quantum dot; Nanopore
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APA ·
Chicago ·
MLA ·
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CSE |
Export
to Zotero / EndNote / Reference
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APA (6th Edition):
Kim, J. D. (2013). III-V inverse quantum dots fabrication, characterization and application. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/45428
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Kim, Jeong Dong. “III-V inverse quantum dots fabrication, characterization and application.” 2013. Thesis, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/45428.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Kim, Jeong Dong. “III-V inverse quantum dots fabrication, characterization and application.” 2013. Web. 14 Apr 2021.
Vancouver:
Kim JD. III-V inverse quantum dots fabrication, characterization and application. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2013. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/45428.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Kim JD. III-V inverse quantum dots fabrication, characterization and application. [Thesis]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/45428
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
12.
Lu, Yun.
III-V compound semiconductor selective area epitaxy on silicon substrates.
Degree: MS, 1200, 2014, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/49642
► In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems…
(more)
▼ In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems given the high electron mobility that the III-V semiconductors have. Higher electron transport properties than silicon enable the electronic devices made of III-V materials to perform at higher switching speed. The integration of III-V semiconductor devices on silicon is the most approachable way that utilizes both the mature manufacturing technology of silicon CMOS circuits and the good electronic properties of III-V material. In optoelectronics, silicon is not a good material to make light sources because of its indirect bandgap. The potential high bandwidth and high speed data transmission in VLSI optical interconnects drive the need for optical device integration in silicon circuits. Monolithic III-V on silicon substrate optoelectronic devices are a promising direction to achieve optical data transmission on chip.
Selective area epitaxy is an MOCVD/MBE growth method that deposits high quality epitaxial materials on selected substrate surface areas. The selectivity is achieved by using SiO2 or Si3N4 as a growth mask, so that epitaxial growth only happens on exposed substrate surface. The dislocation density reduction and bottom-up fabrication advantages of selective area epitaxy make it a widely used approach in III-V on silicon integration. This thesis introduces the motivation, growth methods, issues, and applications of III-V semiconductor selective area epitaxy on silicon substrate.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">
Coleman,
James J. (advisor).
Subjects/Keywords: selective area epitaxy; III-V material; silicon substrate; monolithic device; Metal organic chemical vapor deposition (MOCVD); Molecular beam epitaxy (MBE)
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APA ·
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APA (6th Edition):
Lu, Y. (2014). III-V compound semiconductor selective area epitaxy on silicon substrates. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/49642
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Lu, Yun. “III-V compound semiconductor selective area epitaxy on silicon substrates.” 2014. Thesis, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/49642.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Lu, Yun. “III-V compound semiconductor selective area epitaxy on silicon substrates.” 2014. Web. 14 Apr 2021.
Vancouver:
Lu Y. III-V compound semiconductor selective area epitaxy on silicon substrates. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2014. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/49642.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Lu Y. III-V compound semiconductor selective area epitaxy on silicon substrates. [Thesis]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/49642
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
13.
Choi, UGuen.
Fabrication and measurements of surface-etched grating distributed Bragg reflector laser.
Degree: MS, 1200, 2013, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/42248
► A laser diode emits light at a specific wavelength band and can be used in specific applications depending on its wavelength. However, the bandwidth of…
(more)
▼ A laser diode emits light at a specific wavelength band and can be used in specific applications depending on its wavelength. However, the bandwidth of the laser gain is relatively broad, so a distributed Bragg reflector (DBR) laser is used to make a narrow linewidth laser. The thesis discusses semiconductor lasers that use surface-etched DBR along with the physics of both the semiconductor and the DBR laser. The topics addressed are the fabrication of the broad area laser, ridge waveguide laser, and distributed Bragg reflector broad area and ridge waveguide laser. The thesis reports on the characterization of the laser with different measurements and the physics behind each measurement.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">
Coleman,
James J. (advisor).
Subjects/Keywords: laser; Surface etched grating; grating; Distributed Bragg reflector (DBR); Distributed Bragg reflector (DBR) laser
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APA ·
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APA (6th Edition):
Choi, U. (2013). Fabrication and measurements of surface-etched grating distributed Bragg reflector laser. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/42248
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Choi, UGuen. “Fabrication and measurements of surface-etched grating distributed Bragg reflector laser.” 2013. Thesis, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/42248.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Choi, UGuen. “Fabrication and measurements of surface-etched grating distributed Bragg reflector laser.” 2013. Web. 14 Apr 2021.
Vancouver:
Choi U. Fabrication and measurements of surface-etched grating distributed Bragg reflector laser. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2013. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/42248.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Choi U. Fabrication and measurements of surface-etched grating distributed Bragg reflector laser. [Thesis]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/42248
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
14.
Liudvih, Pavel.
Quantum well devices fabricated using selective area growth and their application in optical fiber communication.
Degree: MS, 1200, 2014, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/46625
► In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully…
(more)
▼ In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators.
SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We will put more weight on SAG with MOCVD growth because certain properties of this technique are particularly attractive. We summarize growth conditions including pressure, temperature, material supply rate, and ratio of source materials for optimum SAG results. By adjusting the dielectric mask geometry one can simultaneously grow photonic devices with a range of absorption/emission spectra on the same substrate. We will introduce a theoretical SAG model and apply it to both discrete and integrated III-V compound semiconductor photonic devices. The prediction is compared with the experimental results and discussed in details.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">
Coleman,
James J. (advisor).
Subjects/Keywords: Selective area epitaxy (SAE); Selective area growth (SAG); integrated modulator; Metalorganic chemical vapor deposition (MOCVD); quantum well.
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APA ·
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APA (6th Edition):
Liudvih, P. (2014). Quantum well devices fabricated using selective area growth and their application in optical fiber communication. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/46625
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Liudvih, Pavel. “Quantum well devices fabricated using selective area growth and their application in optical fiber communication.” 2014. Thesis, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/46625.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Liudvih, Pavel. “Quantum well devices fabricated using selective area growth and their application in optical fiber communication.” 2014. Web. 14 Apr 2021.
Vancouver:
Liudvih P. Quantum well devices fabricated using selective area growth and their application in optical fiber communication. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2014. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/46625.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Liudvih P. Quantum well devices fabricated using selective area growth and their application in optical fiber communication. [Thesis]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/46625
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
15.
Reddy, Uttam.
Wide stripe single and dual wavelength mode semiconductor diode lasers.
Degree: PhD, 1200, 2011, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/24510
► Wide stripe semiconductor lasers have a wide variety of applications in remote sensing, in materials processing applications such as drilling and welding, and as pumps…
(more)
▼ Wide stripe semiconductor lasers have a wide variety of applications in remote sensing, in materials processing applications such as drilling and welding, and as pumps for gas lasers. The emission spectra of simple cost-effective Fabry-Perot (F-P) lasers tends to be very broad, i.e. in the 5-10 nm range at very high power levels, making their use ineffective in some of the above mentioned applications.
In order to overcome the problem faced by wide stripe diode lasers with respect to emission wavelength, external gratings such as volume Bragg gratings have been used. These external gratings not only significantly drive up the cost of such integrated systems but also have their drawbacks in that they are very sensitive to mechanical vibrations. This work has focused on the use of an internal grating, a distributed Bragg reflector (DBR) grating that was monolithically inserted into the gain section of a semiconductor laser. The result is a single wavelength mode semiconductor laser capable of delivering high power levels. These lasers were made to have an emission wavelength of around 980 nm.
The concept of a wide stripe, single wavelength mode laser eventually led to the creation of a wide stripe, dual wavelength mode laser. These lasers, apart from delivering high power levels, were also made to oscillate on two specific predetermined wavelengths. The laser has two different DBR gratings that were placed next to each other within the gain guided cavity. The wavelengths of interest were determined by controlling the respective pitches of the DBR gratings in accordance with the Bragg condition. The difference frequency between both wavelength modes can be tuned to be in the terahertz (THz) range, leading to interesting THz frequency generation experiments and eventual applications.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">
Coleman,
James J. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Schutt-Ain%3F%3F%2C%20Jos%3F%3F%20E.%22%29&pagesize-30">Schutt-Ain??, Jos?? E. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Li%2C%20Xiuling%22%29&pagesize-30">Li, Xiuling (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Bryce%2C%20Catrina%22%29&pagesize-30">Bryce, Catrina (committee member).
Subjects/Keywords: Semiconductor Laser; Distributed Bragg Reflector (DBR) gratings; Broad Area; Narrow linewidth
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APA (6th Edition):
Reddy, U. (2011). Wide stripe single and dual wavelength mode semiconductor diode lasers. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/24510
Chicago Manual of Style (16th Edition):
Reddy, Uttam. “Wide stripe single and dual wavelength mode semiconductor diode lasers.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/24510.
MLA Handbook (7th Edition):
Reddy, Uttam. “Wide stripe single and dual wavelength mode semiconductor diode lasers.” 2011. Web. 14 Apr 2021.
Vancouver:
Reddy U. Wide stripe single and dual wavelength mode semiconductor diode lasers. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/24510.
Council of Science Editors:
Reddy U. Wide stripe single and dual wavelength mode semiconductor diode lasers. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/24510
16.
Chun, Ik Su.
Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization.
Degree: PhD, 1200, 2012, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/29778
► Strain-induced self-rolled-up semiconductor nanotubes are a new type of building block for three-dimensional architectures. Semiconductor nanotubes (SNTs) take advantage of the lattice mismatch between different…
(more)
▼ Strain-induced self-rolled-up semiconductor nanotubes are a new type of building block for three-dimensional architectures. Semiconductor nanotubes (SNTs) take advantage of the lattice mismatch between different layers and are formed when the strained semiconductor layers are released from the substrate by selective etching of the sacrificial layer. They are produced by a combination of “top-down” and “bottom-up” approaches, using the epitaxial growth of strained films and conventional fabrication processes such as lithography and wet/dry etching. Taking advantage of “bottom-up” approaches, nanoscale objects can be achieved; by using a “top-down” approach, their positions can be precisely controlled, and it is possible to form a large-area assembly of ordered tubes.
Tube diameter is determined by the thickness and amount of misfit strain which is accommodated in epitaxial films and can vary from a few nanometers to tens of microns. The shapes of three-dimensional (3D) structures are determined by the crystal orientation of the defined mesa patterns, and they can be formed as 3D tubular structures, helices, or just curved structure. The tube wall consists of compound semiconductor materials such as GaAs, AlxGa1-xAs, and InxGa1-xAs and therefore it forms a heterostructure. As a result, optical gain media such as quantum wells and quantum dots can be embedded in the tube wall and these semiconductor tubes have potential for application as optoelectronic devices.
In this dissertation, metal-organic chemical vapor deposition (MOCVD) has been used to grow epitaxial layers. Variation of tube diameter, which depends on the thickness of layers and the amount of In content in the InxGa1-xAs layer, and the orientation dependence of tube formation were systematically investigated. The precise controllability of structural and spatial positioning of tubes has been achieved by understanding effects of geometry on tube formation, and perfectly ordered large arrays of tubes were realized. Also, GaAs quantum wells and InAs quantum dots have been embedded in the tube wall, and their optical properties were studied, using the micro-PL system. In rolled-up tube structures, strain plays a significant role in engineering the band structure, and therefore peak positions in the photoluminescence spectrum can be tuned continuously as a function of tube curvature and were experimentally investigated.
By taking advantage of strain relaxation of the strained films, different types of tubes are formed. SiN tubes, consisting of a compressively and tensile strained bilayer and tubes that were functionalized with different metals have been demonstrated. These tubes are used for the fabrication of high density carbon nanotubes and biosensor application using the micro-Raman system.
Chapter 1 presents a brief overview of a new tubular architecture that is formed by self-rolling of the strained semiconductor films and describes the formation mechanism of SNTs.
Chapter 2 outlines fabrication techniques to produce strain-induced…
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Li%2C%20Xiuling%22%29&pagesize-30">Li, Xiuling (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Kim%2C%20Kyekyoon%22%29&pagesize-30">Kim, Kyekyoon (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Hsia%2C%20K.%20Jimmy%22%29&pagesize-30">Hsia, K. Jimmy (committee member).
Subjects/Keywords: Strain-induced self-rolled-up semiconductor nanotubes; Micro/Nanotubes
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APA (6th Edition):
Chun, I. S. (2012). Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/29778
Chicago Manual of Style (16th Edition):
Chun, Ik Su. “Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/29778.
MLA Handbook (7th Edition):
Chun, Ik Su. “Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization.” 2012. Web. 14 Apr 2021.
Vancouver:
Chun IS. Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/29778.
Council of Science Editors:
Chun IS. Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/29778
17.
Giannopoulos, Antonios.
Micro- and nano-cavity lasers for sensing applications.
Degree: PhD, 1200, 2010, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/16080
► Lasers can be used for a multitude of sensing applications. This dissertation discusses two types of lasers for sensing applications. The use of an integrated…
(more)
▼ Lasers can be used for a multitude of sensing applications. This dissertation discusses two types of lasers for sensing applications. The use of an integrated vertical-cavity
surface-emitting laser and photodetector as a position sensor is first detailed. Design,
fabrication, and simulation of the position sensing capabilities are discussed. The use of
a grating as the position gauge ultimately makes the range of measurement very large.
Experimental demonstration of position sensing and velocity sensing is shown.
Photonic crystal membrane lasers, a type of nanoscale laser, are advantageous for sensing because of their compactness and ultra-small modal volume. Different aspects and properties of photonic crystal membrane lasers are discussed. The thermal characteristics of a photonic crystal laser are studied using a finite element method. Two new types of photonic crystal membrane cavity lasers are also presented and discussed: the decimated photonic crystal cavity and the heterostructure photonic crystal cavity. The later cavity
is analyzed in greater detail via experiment and simulation.
Progress towards creating an electrically injected photonic crystal emitter is also discussed. The materials design and fabrication technique are presented. Here, the devices are fabricated in the InGaAs/GaAs material system. An oxidation layer is used to create a current aperture as well as to provide index contrast to the photonic crystal membrane. Calculations pertaining to the quality factor of the cavities in the diode configuration are presented. A fabrication sequence and required process development is discussed, as well as progress toward laser diode fabrication.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Choquette%2C%20Kent%20D.%22%29&pagesize-30">Choquette, Kent D. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Choquette%2C%20Kent%20D.%22%29&pagesize-30">Choquette, Kent D. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Carney%2C%20Paul%20S.%22%29&pagesize-30">Carney, Paul S. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Jin%2C%20Jianming%22%29&pagesize-30">Jin, Jianming (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Li%2C%20Xiuling%22%29&pagesize-30">Li, Xiuling (committee member).
Subjects/Keywords: Semiconductor Lasers; Photonic Crystals
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APA (6th Edition):
Giannopoulos, A. (2010). Micro- and nano-cavity lasers for sensing applications. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/16080
Chicago Manual of Style (16th Edition):
Giannopoulos, Antonios. “Micro- and nano-cavity lasers for sensing applications.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/16080.
MLA Handbook (7th Edition):
Giannopoulos, Antonios. “Micro- and nano-cavity lasers for sensing applications.” 2010. Web. 14 Apr 2021.
Vancouver:
Giannopoulos A. Micro- and nano-cavity lasers for sensing applications. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/16080.
Council of Science Editors:
Giannopoulos A. Micro- and nano-cavity lasers for sensing applications. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/16080
18.
Johnson, Matthew.
Coherently-coupled vertical-cavity laser arrays.
Degree: PhD, 1200, 2014, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/46669
► Coherently-coupled vertical cavity surface-emitting laser (VCSEL) arrays offer a unique approach to beam steering and high-radiance applications, and have many advantages such as small size,…
(more)
▼ Coherently-coupled vertical cavity surface-emitting laser (VCSEL) arrays offer a unique approach to beam steering and high-radiance applications, and have many advantages such as small size, low cost, high speed, durability and manufacturing ease. Previous work on coherently-coupled VCSEL arrays has left unfinished the tasks of determining the beam steering mechanism within the arrays and achieving current uniformity across large arrays without resorting to overly-complicated fabrication procedures. This work fulfills the former by establishing a full theoretical connection between the differential current injected into the array elements and the observed steering of the far-field beam. Record high beam-steering speed and phase responsivity are also demonstrated, showing promise for applications in high-speed modulation. The first in-phase emission from a coherently-coupled bottom-emitting VCSEL array is also demonstrated, along with significantly improved current uniformity across larger arrays.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Choquette%2C%20Kent%20D.%22%29&pagesize-30">Choquette, Kent D. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Choquette%2C%20Kent%20D.%22%29&pagesize-30">Choquette, Kent D. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Popescu%2C%20Gabriel%22%29&pagesize-30">Popescu, Gabriel (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Wasserman%2C%20Daniel%20M.%22%29&pagesize-30">Wasserman, Daniel M. (committee member).
Subjects/Keywords: vertical cavity surface-emitting lasers; beam steering; phased array; optical phased array; semiconductor laser array; diode laser array; coupled mode theory; dynamic coupled mode theory
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APA ·
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MLA ·
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CSE |
Export
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APA (6th Edition):
Johnson, M. (2014). Coherently-coupled vertical-cavity laser arrays. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/46669
Chicago Manual of Style (16th Edition):
Johnson, Matthew. “Coherently-coupled vertical-cavity laser arrays.” 2014. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/46669.
MLA Handbook (7th Edition):
Johnson, Matthew. “Coherently-coupled vertical-cavity laser arrays.” 2014. Web. 14 Apr 2021.
Vancouver:
Johnson M. Coherently-coupled vertical-cavity laser arrays. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2014. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/46669.
Council of Science Editors:
Johnson M. Coherently-coupled vertical-cavity laser arrays. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/46669
19.
Schmucker, Scott.
Scanning tunneling microscopy studies of fluorinated graphene films and field-directed sputter sharpening.
Degree: PhD, 1200, 2012, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/31038
► Graphene fluoride is a two-dimensional fluorocarbon, and the wide-gap analogue of graphene. Among chemical derivatives of graphene, graphene fluoride is unique in its ease of…
(more)
▼ Graphene fluoride is a two-dimensional fluorocarbon, and the wide-gap analogue of graphene. Among chemical derivatives of graphene, graphene fluoride is unique in its ease of synthesis and stability, as well as the extensive study of its bulk form, graphite fluoride. Only in the last few years, however, has graphene fluoride been isolated experimentally, and our understanding of its atomic and electronic structure, stability, reduction, and use as a platform for lithographic patterning is still limited. In this dissertation, an ultra-high vacuum scanning tunneling microscope (UHV-STM) is employed for the characterization of exfoliated double-sided graphene fluoride (ds-GF) and of single-sided graphene fluoride (ss-GF) on Cu foil. We explore the structure and stability of each material and, in particular, identify ss-GF as a stable, well-ordered, wide-gap semiconductor. This dissertation offers the first atomic-resolution study of this novel material, and the first UHV-STM measurement of its electronic structure.
Furthermore, we develop the novel field-directed sputter sharpening (FDSS) technique for producing sharp metal probes with 1 – 5 nm radii of curvature, a prerequisite for high-resolution scanning tunneling microscopy (STM) imaging and nanolithography. We show that FDSS offers significant improvements in lithographic patterning, and is applicable to a range of materials, including the hard metallic-ceramic hafnium diboride (HfB2). Finally, we explore the use of HfB2-coated W wires for STM imaging and spectroscopy.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Lyding%2C%20Joseph%20W.%22%29&pagesize-30">Lyding, Joseph W. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Lyding%2C%20Joseph%20W.%22%29&pagesize-30">Lyding, Joseph W. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Abelson%2C%20John%20R.%22%29&pagesize-30">Abelson, John R. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Pop%2C%20Eric%22%29&pagesize-30">Pop, Eric (committee member).
Subjects/Keywords: graphene; graphene fluoride; chemically modified graphene; scanning tunneling microscopy; scanning tunneling spectroscopy; hafnium diboride; sputter erosion sharpening; field-directed sputter sharpening
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APA ·
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MLA ·
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CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Schmucker, S. (2012). Scanning tunneling microscopy studies of fluorinated graphene films and field-directed sputter sharpening. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/31038
Chicago Manual of Style (16th Edition):
Schmucker, Scott. “Scanning tunneling microscopy studies of fluorinated graphene films and field-directed sputter sharpening.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/31038.
MLA Handbook (7th Edition):
Schmucker, Scott. “Scanning tunneling microscopy studies of fluorinated graphene films and field-directed sputter sharpening.” 2012. Web. 14 Apr 2021.
Vancouver:
Schmucker S. Scanning tunneling microscopy studies of fluorinated graphene films and field-directed sputter sharpening. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/31038.
Council of Science Editors:
Schmucker S. Scanning tunneling microscopy studies of fluorinated graphene films and field-directed sputter sharpening. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/31038
20.
Siriani, Dominic F.
Analysis and applications of coupled leaky-mode, implant-defined surface-emitting laser arrays.
Degree: PhD, 1200, 2011, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/24284
► Anti-guided vertical-cavity surface-emitting laser (VCSEL) arrays have been designed, fabricated, and characterized using a number of methods. Two-dimensional coherent arrays are useful for biological and…
(more)
▼ Anti-guided vertical-cavity surface-emitting laser (VCSEL) arrays have been designed, fabricated, and characterized using a number of methods. Two-dimensional coherent arrays are useful for biological and atmospheric sensing, free-space and fiber-based optical links, high-power laser pumps, and optical imaging. Coherently coupled arrays exhibit desirable characteristics such as low beam divergence and high brightness. However, the fabrication procedures necessary for such designs are typically complicated and expensive. This work demonstrates and explores a new and much simpler anti-guided VCSEL array design using ion implantation and photonic crystal confinement. The origin of anti-guiding in these laser arrays is described in detail, and design rules for optimizing performance are discussed. A complete description of the means to achieve optical coupling in surface-emitting laser arrays, as well as the coherence in these arrays, is presented through both theoretical and experimental investigations. These lasers are shown to be capable of producing highly coherent, single-mode, in-phase output beams. The application of such arrays as low-divergence and steerable sources is demonstrated experimentally.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Choquette%2C%20Kent%20D.%22%29&pagesize-30">Choquette, Kent D. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Choquette%2C%20Kent%20D.%22%29&pagesize-30">Choquette, Kent D. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Bernhard%2C%20Jennifer%20T.%22%29&pagesize-30">Bernhard, Jennifer T. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Carney%2C%20Paul%20S.%22%29&pagesize-30">Carney, Paul S. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Eden%2C%20James%20G.%22%29&pagesize-30">Eden, James G. (committee member).
Subjects/Keywords: Semiconductor laser arrays; Vertical-cavity surface-emitting lasers
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APA (6th Edition):
Siriani, D. F. (2011). Analysis and applications of coupled leaky-mode, implant-defined surface-emitting laser arrays. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/24284
Chicago Manual of Style (16th Edition):
Siriani, Dominic F. “Analysis and applications of coupled leaky-mode, implant-defined surface-emitting laser arrays.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/24284.
MLA Handbook (7th Edition):
Siriani, Dominic F. “Analysis and applications of coupled leaky-mode, implant-defined surface-emitting laser arrays.” 2011. Web. 14 Apr 2021.
Vancouver:
Siriani DF. Analysis and applications of coupled leaky-mode, implant-defined surface-emitting laser arrays. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/24284.
Council of Science Editors:
Siriani DF. Analysis and applications of coupled leaky-mode, implant-defined surface-emitting laser arrays. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/24284
21.
Woodard, Brian.
Electric oxygen-iodine laser discharge scaling and laser performance.
Degree: PhD, 4048, 2012, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/31112
► In 2004, a research partnership between the University of Illinois and CU Aerospace demonstrated the first electric discharge pumped oxygen-iodine laser referred to as ElectricOIL.…
(more)
▼ In 2004, a research partnership between the
University of
Illinois and CU Aerospace demonstrated the first electric discharge pumped oxygen-iodine laser referred to as ElectricOIL. This exciting improvement over the standard oxygen-iodine laser utilizes a gas discharge to produce the necessary electronically-excited molecular oxygen, O2(a1), that serves as the energy reservoir in the laser system. Pumped by a near-resonant energy transfer, the atomic iodine lases on the I(2P1/2) → I(2P3/2) transition at 1315 nm. Molecular oxygen diluted with helium and a small fraction of nitric oxide flows through a radio-frequency discharge where O2(a1) and many other excited species are created. Careful investigations to understand the benefits and problems associated with these other states in the laser system allowed this team to succeed where other research groups had failed, and after the initial demonstration, the ElectricOIL research focus shifted to increasing the efficiencies along with the output laser energy. Among other factors, the laser power scales with the flow rate of oxygen in the desired excited state. Therefore, high yields of O2(a1) are desired along with high input oxygen flow rates. In the early ElectricOIL experiments, the pressure in the discharge was approximately 10 Torr, but increased flow rates forced the pressure to between 50 and 60 Torr requiring a number of new discharge designs in order to produce similar yields of O2(a1) efficiently. Experiments were conducted with only the electric discharge portion of the laser system using emission diagnostics to study the effects of changing the discharge geometry, flow residence time, and diluent. The power carried by O2(a1) is the maximum power that could be extracted from the laser, and the results from these studies showed approximately 2500 W stored in the O2(a1) state. Transferring this energy into the atomic iodine has been another challenge in ElectricOIL as experiments have shown that the iodine is pumped into the excited state slower than is predicted by the known kinetics, resulting in reduced output power. An elementary model is presented that may partially explain this problem. Larger laser resonator volumes are employed to improve power extraction by providing more flow time for iodine pumping. The results presented in this work in conjunction with the efforts of others led to ElectricOIL scaling from 200 mW in the initial demonstration to nearly 500 W.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Solomon%2C%20Wayne%20C.%22%29&pagesize-30">Solomon, Wayne C. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Solomon%2C%20Wayne%20C.%22%29&pagesize-30">Solomon, Wayne C. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Burton%2C%20Rodney%20L.%22%29&pagesize-30">Burton, Rodney L. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Elliott%2C%20Gregory%20S.%22%29&pagesize-30">Elliott, Gregory S. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Verdeyen%2C%20Joseph%20T.%22%29&pagesize-30">Verdeyen, Joseph T. (committee member).
Subjects/Keywords: electric discharge oxygen-iodine laser (ElectricOIL); Electric Oxygen-Iodine Laser(EOIL); Discharge Oxygen-Iodine Laser (DOIL); singlet delta oxygen
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APA (6th Edition):
Woodard, B. (2012). Electric oxygen-iodine laser discharge scaling and laser performance. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/31112
Chicago Manual of Style (16th Edition):
Woodard, Brian. “Electric oxygen-iodine laser discharge scaling and laser performance.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/31112.
MLA Handbook (7th Edition):
Woodard, Brian. “Electric oxygen-iodine laser discharge scaling and laser performance.” 2012. Web. 14 Apr 2021.
Vancouver:
Woodard B. Electric oxygen-iodine laser discharge scaling and laser performance. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/31112.
Council of Science Editors:
Woodard B. Electric oxygen-iodine laser discharge scaling and laser performance. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/31112
University of Illinois – Urbana-Champaign
22.
Verma, Varun B.
Patterned Quantum Dot and Inverse Quantum Dot Active Layers for Optoelectronics Applications.
Degree: PhD, 1200, 2010, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/14591
► The use of semiconductor quantum dots (QDs) in photonic devices has become widespread in recent years and QDs themselves have received a considerable amount of…
(more)
▼ The use of semiconductor quantum dots (QDs) in photonic devices has become widespread in recent years and QDs themselves have received a considerable amount of attention from the photonics community. Not only do they offer many potential advantages in lasers, but they have also become interesting from an applied physics perspective as tools for exploring strong coupling in nanoscale cavities, as single photon emitters, and possibly as elements of quantum information circuits. To a great extent many of the promises made about the advantages QDs would bring to photonic devices remain unfulfilled, largely due to the size inhomogeneity and random placement inherent with the self-assembled growth technique. The work in this document demonstrates that it is possible to create patterned QDs with precisely engineered properties such as diameter, thickness, material composition, position, and emission wavelength, while simultaneously maintaining the high optical quality of the material necessary for incorporation into optoelectronic devices. These QDs are fabricated using electron beam lithography combined with wet-etching and regrowth techniques.
We also present a detailed theoretical analysis of a novel structure which can only be formed by patterning techniques known as the nanopore or inverse quantum dot structure. This structure is the electronic analogue of a photonic crystal. We show that the perturbation of an ordinary quantum well by a periodic two-dimensional lattice of energy barriers leads to the introduction of intraband energy gaps. The predicted results show excellent agreement with experimental data obtained from devices fabricated by selective area epitaxy. In addition, we have explored the use of the wet-etching technique for the fabrication of this nanostructure. The wet-etching technique is shown to provide a higher degree of flexibility and repeatability than the selective area epitaxy process. The experimental results suggest a significant reduction in intersubband scattering rates resulting in a drastic modification of the interband optical properties, which may be useful for the utilization of the nanopore structure in intersubband devices. This observation is supported by analytical calculations of the electron-phonon scattering rates in the nanopore structure.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">
Coleman,
James J. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Li%2C%20Xiuling%22%29&pagesize-30">Li, Xiuling (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Choquette%2C%20Kent%20D.%22%29&pagesize-30">Choquette, Kent D. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Chuang%2C%20Shun-Lien%22%29&pagesize-30">Chuang, Shun-Lien (committee member).
Subjects/Keywords: quantum dots; semiconductor laser; quantum; laser
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APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
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APA (6th Edition):
Verma, V. B. (2010). Patterned Quantum Dot and Inverse Quantum Dot Active Layers for Optoelectronics Applications. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/14591
Chicago Manual of Style (16th Edition):
Verma, Varun B. “Patterned Quantum Dot and Inverse Quantum Dot Active Layers for Optoelectronics Applications.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/14591.
MLA Handbook (7th Edition):
Verma, Varun B. “Patterned Quantum Dot and Inverse Quantum Dot Active Layers for Optoelectronics Applications.” 2010. Web. 14 Apr 2021.
Vancouver:
Verma VB. Patterned Quantum Dot and Inverse Quantum Dot Active Layers for Optoelectronics Applications. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/14591.
Council of Science Editors:
Verma VB. Patterned Quantum Dot and Inverse Quantum Dot Active Layers for Optoelectronics Applications. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/14591
University of Illinois – Urbana-Champaign
23.
Readle, Jason D.
Atomic alkali lasers pumped by the dissociation of photoexcited alkali-rare gas collision pairs.
Degree: PhD, 0115, 2010, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/16810
► A new class of photoassociation lasers has been demonstrated in which photoexcited alkali-rare gas collision pairs dissociate in order to produce inversion on atomic alkali…
(more)
▼ A new class of photoassociation lasers has been demonstrated in which photoexcited
alkali-rare gas collision pairs dissociate in order to produce inversion on atomic alkali
transitions. The pump acceptance bandwidths of these excimer bands, historically
referred to as spectral satellites, have been observed to be as broad as 5 nm. This
characteristic makes excimer-pumped alkali-vapor lasers (XPALs) attractive candidates
for the spatial mode conversion of laser diode arrays with nominal linewidths
of 2 nm in order to produce high quality (M2 1) beams. Quantum e ciencies exceeding
98% have been measured and may potentially mitigate heat extraction issues
associated with high power, large volume lasers.
XPALs operating on both the n2P1=2 ! n2S1=2 (D1) or n2P3=2 ! n2S1=2 (D2)
transitions of Cs (n = 6) and Rb (n = 5) have been experimentally investigated and
show promise for scaling to high power, diode pumped systems. Both semiclassical
and quantum mechanical formulations of the free!free transitions which produce
satellites are presented, culminating in an improved CsAr(B2 +
1=2) potential. A timedependent
rate equation model is also described which clearly shows the validity and
utility of employing the laser itself as a sensitive probe of the underlying photoassociation
kinetics.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Eden%2C%20James%20G.%22%29&pagesize-30">Eden,
James G. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Eden%2C%20James%20G.%22%29&pagesize-30">Eden, James G. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Lisy%2C%20James%20M.%22%29&pagesize-30">Lisy, James M. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Carney%2C%20Paul%20S.%22%29&pagesize-30">Carney, Paul S. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Verdeyen%2C%20Joseph%20T.%22%29&pagesize-30">Verdeyen, Joseph T. (committee member).
Subjects/Keywords: gas laser; atomic laser; alkali; rare-gas; excimer-pumped alkali-vapor lasers (XPAL); Diode-Pumped Alkali Laser (DPAL); satellite; photoassociation; collision pair; excimer; diode pumped; diode laser; free-free transitions
Record Details
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APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Readle, J. D. (2010). Atomic alkali lasers pumped by the dissociation of photoexcited alkali-rare gas collision pairs. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/16810
Chicago Manual of Style (16th Edition):
Readle, Jason D. “Atomic alkali lasers pumped by the dissociation of photoexcited alkali-rare gas collision pairs.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/16810.
MLA Handbook (7th Edition):
Readle, Jason D. “Atomic alkali lasers pumped by the dissociation of photoexcited alkali-rare gas collision pairs.” 2010. Web. 14 Apr 2021.
Vancouver:
Readle JD. Atomic alkali lasers pumped by the dissociation of photoexcited alkali-rare gas collision pairs. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/16810.
Council of Science Editors:
Readle JD. Atomic alkali lasers pumped by the dissociation of photoexcited alkali-rare gas collision pairs. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/16810
University of Illinois – Urbana-Champaign
24.
Tchertchian, Paul A.
Hybrid plasma-semiconductor devices.
Degree: PhD, 1200, 2010, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/17048
► A hybrid plasma-semiconductor phototransistor has been realized by substituting a plasma for the collector of an npn bipolar junction transistor. Designated as the plasma bipolar…
(more)
▼ A hybrid plasma-semiconductor phototransistor has been realized by substituting a plasma for the collector of an npn bipolar junction transistor. Designated as the plasma bipolar junction transistor (PBJT), this optoelectronic device relies on the correspondence between the properties of a low temperature, nonequilibrium plasma and those of the electron-hole plasma in an n-type semiconductor. Coupling electrons and holes in a semiconductor and electrons and ions in the gaseous plasma with a strong electric field yields a transistor with photosensitivity, gain, and a light-emitting collector whose radiative output can be modulated or switched using voltages that are less than 1 V. It has been found that the current gain of the transistor increases as a function of the increasing gas pressure and Vcc supplied to the test circuit. External illumination of the base region during operation increases the base current, confirming that the PBJT exhibits phototransistor properties. The utilization of the PBJT in an amplifier circuit has shown voltage gains up to 170 and power gains of nearly 80. A reduction in device dimensions shows promising results for eliminating observed hysteresis as well as increasing the operating frequency and gas pressure of the device.
In addition, a new robust silicon microplasma structure serving as a high-frame-rate, ultra-high-resolution plasma generator has been designed and built, and is currently undergoing preliminary testing. This new structure, designated as the dual junction microplasma (DJM) device, utilizes silicon pn junctions in a specific arrangement to generate plasma emission.
Advisors/Committee Members: Champaign%22%20%2Bcontributor%3A%28%22Eden%2C%20James%20G.%22%29&pagesize-30">Eden,
James G. (advisor),
Champaign%22%20%2Bcontributor%3A%28%22Eden%2C%20James%20G.%22%29&pagesize-30">Eden, James G. (Committee Chair),
Champaign%22%20%2Bcontributor%3A%28%22Coleman%2C%20James%20J.%22%29&pagesize-30">Coleman, James J. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Cunningham%2C%20Brian%20T.%22%29&pagesize-30">Cunningham, Brian T. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Lyding%2C%20Joseph%20W.%22%29&pagesize-30">Lyding, Joseph W. (committee member),
Champaign%22%20%2Bcontributor%3A%28%22Ruzic%2C%20David%20N.%22%29&pagesize-30">Ruzic, David N. (committee member).
Subjects/Keywords: Plasma; Transistor; Optoelectronic; Phototransistor
Record Details
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Record Details
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« Share
❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Tchertchian, P. A. (2010). Hybrid plasma-semiconductor devices. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/17048
Chicago Manual of Style (16th Edition):
Tchertchian, Paul A. “Hybrid plasma-semiconductor devices.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed April 14, 2021.
http://hdl.handle.net/2142/17048.
MLA Handbook (7th Edition):
Tchertchian, Paul A. “Hybrid plasma-semiconductor devices.” 2010. Web. 14 Apr 2021.
Vancouver:
Tchertchian PA. Hybrid plasma-semiconductor devices. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2021 Apr 14].
Available from: http://hdl.handle.net/2142/17048.
Council of Science Editors:
Tchertchian PA. Hybrid plasma-semiconductor devices. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/17048
. 
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