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You searched for +publisher:"University of Hong Kong" +contributor:("Lai, PT"). Showing records 1 – 25 of 25 total matches.

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University of Hong Kong

1. 宋家琪; Song, Jiaqi. Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric.

Degree: PhD, 2017, University of Hong Kong

 In recent years, amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) has been drawing worldwide attention for being an excellent candidate for driving the pixels in next-generation… (more)

Subjects/Keywords: Dielectric devices; Thin film transistors

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APA (6th Edition):

宋家琪; Song, J. (2017). Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/244339

Chicago Manual of Style (16th Edition):

宋家琪; Song, Jiaqi. “Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric.” 2017. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. http://hdl.handle.net/10722/244339.

MLA Handbook (7th Edition):

宋家琪; Song, Jiaqi. “Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric.” 2017. Web. 23 Feb 2019.

Vancouver:

宋家琪; Song J. Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric. [Internet] [Doctoral dissertation]. University of Hong Kong; 2017. [cited 2019 Feb 23]. Available from: http://hdl.handle.net/10722/244339.

Council of Science Editors:

宋家琪; Song J. Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric. [Doctoral Dissertation]. University of Hong Kong; 2017. Available from: http://hdl.handle.net/10722/244339


University of Hong Kong

2. Li, Chunxia. A study on gate dielectrics for Ge MOS devices.

Degree: PhD, 2010, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Lai, PT.

Subjects/Keywords: Germanium.; Dielectrics.; Metal oxide semiconductors, Complementary.

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APA (6th Edition):

Li, C. (2010). A study on gate dielectrics for Ge MOS devices. (Doctoral Dissertation). University of Hong Kong. Retrieved from Li, C. [李春霞]. (2010). A study on gate dielectrics for Ge MOS devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4370387 ; http://dx.doi.org/10.5353/th_b4370387 ; http://hdl.handle.net/10722/57560

Chicago Manual of Style (16th Edition):

Li, Chunxia. “A study on gate dielectrics for Ge MOS devices.” 2010. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Li, C. [李春霞]. (2010). A study on gate dielectrics for Ge MOS devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4370387 ; http://dx.doi.org/10.5353/th_b4370387 ; http://hdl.handle.net/10722/57560.

MLA Handbook (7th Edition):

Li, Chunxia. “A study on gate dielectrics for Ge MOS devices.” 2010. Web. 23 Feb 2019.

Vancouver:

Li C. A study on gate dielectrics for Ge MOS devices. [Internet] [Doctoral dissertation]. University of Hong Kong; 2010. [cited 2019 Feb 23]. Available from: Li, C. [李春霞]. (2010). A study on gate dielectrics for Ge MOS devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4370387 ; http://dx.doi.org/10.5353/th_b4370387 ; http://hdl.handle.net/10722/57560.

Council of Science Editors:

Li C. A study on gate dielectrics for Ge MOS devices. [Doctoral Dissertation]. University of Hong Kong; 2010. Available from: Li, C. [李春霞]. (2010). A study on gate dielectrics for Ge MOS devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4370387 ; http://dx.doi.org/10.5353/th_b4370387 ; http://hdl.handle.net/10722/57560


University of Hong Kong

3. 陶庆波; Tao, Qingbo. A study on the dielectrics of charge-trapping flash memory devices.

Degree: PhD, 2013, University of Hong Kong

 Discrete charge-trapping flash memory is being developed for the next-generation commercial flash-memory applications due to its advantages over the traditional floating-gate counterpart. Currently, Si3N4 is… (more)

Subjects/Keywords: Flash memories (Computers); Dielectrics

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APA (6th Edition):

陶庆波; Tao, Q. (2013). A study on the dielectrics of charge-trapping flash memory devices. (Doctoral Dissertation). University of Hong Kong. Retrieved from Tao, Q. [陶庆波]. (2013). A study on the dielectrics of charge-trapping flash memory devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5177320 ; http://dx.doi.org/10.5353/th_b5177320 ; http://hdl.handle.net/10722/196488

Chicago Manual of Style (16th Edition):

陶庆波; Tao, Qingbo. “A study on the dielectrics of charge-trapping flash memory devices.” 2013. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Tao, Q. [陶庆波]. (2013). A study on the dielectrics of charge-trapping flash memory devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5177320 ; http://dx.doi.org/10.5353/th_b5177320 ; http://hdl.handle.net/10722/196488.

MLA Handbook (7th Edition):

陶庆波; Tao, Qingbo. “A study on the dielectrics of charge-trapping flash memory devices.” 2013. Web. 23 Feb 2019.

Vancouver:

陶庆波; Tao Q. A study on the dielectrics of charge-trapping flash memory devices. [Internet] [Doctoral dissertation]. University of Hong Kong; 2013. [cited 2019 Feb 23]. Available from: Tao, Q. [陶庆波]. (2013). A study on the dielectrics of charge-trapping flash memory devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5177320 ; http://dx.doi.org/10.5353/th_b5177320 ; http://hdl.handle.net/10722/196488.

Council of Science Editors:

陶庆波; Tao Q. A study on the dielectrics of charge-trapping flash memory devices. [Doctoral Dissertation]. University of Hong Kong; 2013. Available from: Tao, Q. [陶庆波]. (2013). A study on the dielectrics of charge-trapping flash memory devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5177320 ; http://dx.doi.org/10.5353/th_b5177320 ; http://hdl.handle.net/10722/196488


University of Hong Kong

4. Qian, Lingxuan. Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric.

Degree: PhD, 2014, University of Hong Kong

 In general, La-based high-k gate dielectric owns superior properties to offer transistor excellent characteristics. Thus, amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric has… (more)

Subjects/Keywords: Thin film transistors; Dielectric devices

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APA (6th Edition):

Qian, L. (2014). Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. (Doctoral Dissertation). University of Hong Kong. Retrieved from Qian, L. [钱凌轩]. (2014). Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5317022 ; http://dx.doi.org/10.5353/th_b5317022 ; http://hdl.handle.net/10722/206467

Chicago Manual of Style (16th Edition):

Qian, Lingxuan. “Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric.” 2014. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Qian, L. [钱凌轩]. (2014). Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5317022 ; http://dx.doi.org/10.5353/th_b5317022 ; http://hdl.handle.net/10722/206467.

MLA Handbook (7th Edition):

Qian, Lingxuan. “Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric.” 2014. Web. 23 Feb 2019.

Vancouver:

Qian L. Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. [Internet] [Doctoral dissertation]. University of Hong Kong; 2014. [cited 2019 Feb 23]. Available from: Qian, L. [钱凌轩]. (2014). Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5317022 ; http://dx.doi.org/10.5353/th_b5317022 ; http://hdl.handle.net/10722/206467.

Council of Science Editors:

Qian L. Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. [Doctoral Dissertation]. University of Hong Kong; 2014. Available from: Qian, L. [钱凌轩]. (2014). Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5317022 ; http://dx.doi.org/10.5353/th_b5317022 ; http://hdl.handle.net/10722/206467


University of Hong Kong

5. Chen, Gang. MIS Schottky-diode hydrogen sensors with different gate insulators or substrates.

Degree: PhD, 2012, University of Hong Kong

 Hydrogen, one of the cleanest energies, is very attractive in the near future. However, it could be hazardous to store, transport and use hydrogen gas… (more)

Subjects/Keywords: Electric insulators and insulation.; Gas detectors - Design and construction.; Hydrogen.; Electric substrates

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APA (6th Edition):

Chen, G. (2012). MIS Schottky-diode hydrogen sensors with different gate insulators or substrates. (Doctoral Dissertation). University of Hong Kong. Retrieved from Chen, G. [陈刚]. (2012). MIS Schottky-diode hydrogen sensors with different gate insulators or substrates. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4979957 ; http://dx.doi.org/10.5353/th_b4979957 ; http://hdl.handle.net/10722/181523

Chicago Manual of Style (16th Edition):

Chen, Gang. “MIS Schottky-diode hydrogen sensors with different gate insulators or substrates.” 2012. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Chen, G. [陈刚]. (2012). MIS Schottky-diode hydrogen sensors with different gate insulators or substrates. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4979957 ; http://dx.doi.org/10.5353/th_b4979957 ; http://hdl.handle.net/10722/181523.

MLA Handbook (7th Edition):

Chen, Gang. “MIS Schottky-diode hydrogen sensors with different gate insulators or substrates.” 2012. Web. 23 Feb 2019.

Vancouver:

Chen G. MIS Schottky-diode hydrogen sensors with different gate insulators or substrates. [Internet] [Doctoral dissertation]. University of Hong Kong; 2012. [cited 2019 Feb 23]. Available from: Chen, G. [陈刚]. (2012). MIS Schottky-diode hydrogen sensors with different gate insulators or substrates. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4979957 ; http://dx.doi.org/10.5353/th_b4979957 ; http://hdl.handle.net/10722/181523.

Council of Science Editors:

Chen G. MIS Schottky-diode hydrogen sensors with different gate insulators or substrates. [Doctoral Dissertation]. University of Hong Kong; 2012. Available from: Chen, G. [陈刚]. (2012). MIS Schottky-diode hydrogen sensors with different gate insulators or substrates. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4979957 ; http://dx.doi.org/10.5353/th_b4979957 ; http://hdl.handle.net/10722/181523


University of Hong Kong

6. Huang, Xiaodong. A study on high-k dielectrics for discrete charge-trapping flash memory applications.

Degree: PhD, 2013, University of Hong Kong

 Discrete charge-trapping flash memories are more promising than their floating-gate counterparts due to their physically discrete-trapping and coupling-free nature. Si3N4 is conventional material as charge-trapping… (more)

Subjects/Keywords: Dielectrics.; Flash memories (Computers)

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APA (6th Edition):

Huang, X. (2013). A study on high-k dielectrics for discrete charge-trapping flash memory applications. (Doctoral Dissertation). University of Hong Kong. Retrieved from Huang, X. [黄晓东]. (2013). A study on high-k dielectrics for discrete charge-trapping flash memory applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5043438 ; http://dx.doi.org/10.5353/th_b5043438 ; http://hdl.handle.net/10722/184251

Chicago Manual of Style (16th Edition):

Huang, Xiaodong. “A study on high-k dielectrics for discrete charge-trapping flash memory applications.” 2013. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Huang, X. [黄晓东]. (2013). A study on high-k dielectrics for discrete charge-trapping flash memory applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5043438 ; http://dx.doi.org/10.5353/th_b5043438 ; http://hdl.handle.net/10722/184251.

MLA Handbook (7th Edition):

Huang, Xiaodong. “A study on high-k dielectrics for discrete charge-trapping flash memory applications.” 2013. Web. 23 Feb 2019.

Vancouver:

Huang X. A study on high-k dielectrics for discrete charge-trapping flash memory applications. [Internet] [Doctoral dissertation]. University of Hong Kong; 2013. [cited 2019 Feb 23]. Available from: Huang, X. [黄晓东]. (2013). A study on high-k dielectrics for discrete charge-trapping flash memory applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5043438 ; http://dx.doi.org/10.5353/th_b5043438 ; http://hdl.handle.net/10722/184251.

Council of Science Editors:

Huang X. A study on high-k dielectrics for discrete charge-trapping flash memory applications. [Doctoral Dissertation]. University of Hong Kong; 2013. Available from: Huang, X. [黄晓东]. (2013). A study on high-k dielectrics for discrete charge-trapping flash memory applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5043438 ; http://dx.doi.org/10.5353/th_b5043438 ; http://hdl.handle.net/10722/184251


University of Hong Kong

7. 邓林峰.; Deng, Linfeng. A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric.

Degree: PhD, 2011, University of Hong Kong

 Compared with its inorganic counterpart, organic thin-film transistor (OTFT) has advantages such as low-temperature fabrication, adaptability to large-area flexible substrate, and low cost. However, they… (more)

Subjects/Keywords: Thin film transistors.; Organic thin films.; Gate array circuits.; Dielectrics.; Hafnium oxide.

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APA (6th Edition):

邓林峰.; Deng, L. (2011). A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric. (Doctoral Dissertation). University of Hong Kong. Retrieved from Deng, L. [邓林峰]. (2011). A study on pentacene organic thin-film transistors with Hf-based oxide as gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4724451 ; http://dx.doi.org/10.5353/th_b4724451 ; http://hdl.handle.net/10722/146134

Chicago Manual of Style (16th Edition):

邓林峰.; Deng, Linfeng. “A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric.” 2011. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Deng, L. [邓林峰]. (2011). A study on pentacene organic thin-film transistors with Hf-based oxide as gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4724451 ; http://dx.doi.org/10.5353/th_b4724451 ; http://hdl.handle.net/10722/146134.

MLA Handbook (7th Edition):

邓林峰.; Deng, Linfeng. “A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric.” 2011. Web. 23 Feb 2019.

Vancouver:

邓林峰.; Deng L. A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric. [Internet] [Doctoral dissertation]. University of Hong Kong; 2011. [cited 2019 Feb 23]. Available from: Deng, L. [邓林峰]. (2011). A study on pentacene organic thin-film transistors with Hf-based oxide as gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4724451 ; http://dx.doi.org/10.5353/th_b4724451 ; http://hdl.handle.net/10722/146134.

Council of Science Editors:

邓林峰.; Deng L. A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric. [Doctoral Dissertation]. University of Hong Kong; 2011. Available from: Deng, L. [邓林峰]. (2011). A study on pentacene organic thin-film transistors with Hf-based oxide as gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4724451 ; http://dx.doi.org/10.5353/th_b4724451 ; http://hdl.handle.net/10722/146134


University of Hong Kong

8. Wang, Xianghua. Design and laser fabrication of GaN/sapphire light-emitting diodes.

Degree: PhD, 2010, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Lai, PT, Choi, HW.

Subjects/Keywords: Sapphires.; Gallium nitride.; Light emitting diodes.

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APA (6th Edition):

Wang, X. (2010). Design and laser fabrication of GaN/sapphire light-emitting diodes. (Doctoral Dissertation). University of Hong Kong. Retrieved from Wang, X. [王向华]. (2010). Design and laser fabrication of GaN/sapphire light-emitting diodes. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4514307 ; http://dx.doi.org/10.5353/th_b4514307 ; http://hdl.handle.net/10722/131792

Chicago Manual of Style (16th Edition):

Wang, Xianghua. “Design and laser fabrication of GaN/sapphire light-emitting diodes.” 2010. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Wang, X. [王向华]. (2010). Design and laser fabrication of GaN/sapphire light-emitting diodes. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4514307 ; http://dx.doi.org/10.5353/th_b4514307 ; http://hdl.handle.net/10722/131792.

MLA Handbook (7th Edition):

Wang, Xianghua. “Design and laser fabrication of GaN/sapphire light-emitting diodes.” 2010. Web. 23 Feb 2019.

Vancouver:

Wang X. Design and laser fabrication of GaN/sapphire light-emitting diodes. [Internet] [Doctoral dissertation]. University of Hong Kong; 2010. [cited 2019 Feb 23]. Available from: Wang, X. [王向华]. (2010). Design and laser fabrication of GaN/sapphire light-emitting diodes. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4514307 ; http://dx.doi.org/10.5353/th_b4514307 ; http://hdl.handle.net/10722/131792.

Council of Science Editors:

Wang X. Design and laser fabrication of GaN/sapphire light-emitting diodes. [Doctoral Dissertation]. University of Hong Kong; 2010. Available from: Wang, X. [王向华]. (2010). Design and laser fabrication of GaN/sapphire light-emitting diodes. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4514307 ; http://dx.doi.org/10.5353/th_b4514307 ; http://hdl.handle.net/10722/131792


University of Hong Kong

9. Liu, Lining. A study on the improvement of GaAs MOS devices with high-k gate dielectric.

Degree: PhD, 2017, University of Hong Kong

 Since silicon-based Metal-Oxide-Semiconductor (MOS) technology is approaching its physical limit, high-mobility semiconductors (Ge, III-V compounds, etc.) have been proposed to replace silicon. Among them, GaAs… (more)

Subjects/Keywords: Metal oxide semiconductors; Dielectrics; Gallium arsenide semiconductors

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APA (6th Edition):

Liu, L. (2017). A study on the improvement of GaAs MOS devices with high-k gate dielectric. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/249877

Chicago Manual of Style (16th Edition):

Liu, Lining. “A study on the improvement of GaAs MOS devices with high-k gate dielectric.” 2017. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. http://hdl.handle.net/10722/249877.

MLA Handbook (7th Edition):

Liu, Lining. “A study on the improvement of GaAs MOS devices with high-k gate dielectric.” 2017. Web. 23 Feb 2019.

Vancouver:

Liu L. A study on the improvement of GaAs MOS devices with high-k gate dielectric. [Internet] [Doctoral dissertation]. University of Hong Kong; 2017. [cited 2019 Feb 23]. Available from: http://hdl.handle.net/10722/249877.

Council of Science Editors:

Liu L. A study on the improvement of GaAs MOS devices with high-k gate dielectric. [Doctoral Dissertation]. University of Hong Kong; 2017. Available from: http://hdl.handle.net/10722/249877


University of Hong Kong

10. Li, Zonglin. Reliability study of InGaN/GaN light-emitting diode.

Degree: M. Phil., 2009, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Master

Master of Philosophy

Advisors/Committee Members: Lai, PT, Choi, HW.

Subjects/Keywords: Electroluminescence.; Diodes, Semiconductor.; Light emitting diodes.

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APA (6th Edition):

Li, Z. (2009). Reliability study of InGaN/GaN light-emitting diode. (Masters Thesis). University of Hong Kong. Retrieved from Li, Z. [李宗林]. (2009). Reliability study of InGaN/GaN light-emitting diode. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4322415 ; http://dx.doi.org/10.5353/th_b4322415 ; http://hdl.handle.net/10722/56803

Chicago Manual of Style (16th Edition):

Li, Zonglin. “Reliability study of InGaN/GaN light-emitting diode.” 2009. Masters Thesis, University of Hong Kong. Accessed February 23, 2019. Li, Z. [李宗林]. (2009). Reliability study of InGaN/GaN light-emitting diode. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4322415 ; http://dx.doi.org/10.5353/th_b4322415 ; http://hdl.handle.net/10722/56803.

MLA Handbook (7th Edition):

Li, Zonglin. “Reliability study of InGaN/GaN light-emitting diode.” 2009. Web. 23 Feb 2019.

Vancouver:

Li Z. Reliability study of InGaN/GaN light-emitting diode. [Internet] [Masters thesis]. University of Hong Kong; 2009. [cited 2019 Feb 23]. Available from: Li, Z. [李宗林]. (2009). Reliability study of InGaN/GaN light-emitting diode. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4322415 ; http://dx.doi.org/10.5353/th_b4322415 ; http://hdl.handle.net/10722/56803.

Council of Science Editors:

Li Z. Reliability study of InGaN/GaN light-emitting diode. [Masters Thesis]. University of Hong Kong; 2009. Available from: Li, Z. [李宗林]. (2009). Reliability study of InGaN/GaN light-emitting diode. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4322415 ; http://dx.doi.org/10.5353/th_b4322415 ; http://hdl.handle.net/10722/56803


University of Hong Kong

11. 李桂君; Li, Guijun. Development of recording technology with FePt recording media and magnetic tunnel junction sensors with conetic alloy.

Degree: PhD, 2013, University of Hong Kong

With highly demanding requirement in current emerging cloud storage and personal computers, hard disk drive recording with high stability and high volume has attached much… (more)

Subjects/Keywords: Hard disks (Computer science); Data disk drives.

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APA (6th Edition):

李桂君; Li, G. (2013). Development of recording technology with FePt recording media and magnetic tunnel junction sensors with conetic alloy. (Doctoral Dissertation). University of Hong Kong. Retrieved from Li, G. [李桂君]. (2013). Development of recording technology with FePt recording media and magnetic tunnel junction sensors with conetic alloy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5089977 ; http://dx.doi.org/10.5353/th_b5089977 ; http://hdl.handle.net/10722/192832

Chicago Manual of Style (16th Edition):

李桂君; Li, Guijun. “Development of recording technology with FePt recording media and magnetic tunnel junction sensors with conetic alloy.” 2013. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Li, G. [李桂君]. (2013). Development of recording technology with FePt recording media and magnetic tunnel junction sensors with conetic alloy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5089977 ; http://dx.doi.org/10.5353/th_b5089977 ; http://hdl.handle.net/10722/192832.

MLA Handbook (7th Edition):

李桂君; Li, Guijun. “Development of recording technology with FePt recording media and magnetic tunnel junction sensors with conetic alloy.” 2013. Web. 23 Feb 2019.

Vancouver:

李桂君; Li G. Development of recording technology with FePt recording media and magnetic tunnel junction sensors with conetic alloy. [Internet] [Doctoral dissertation]. University of Hong Kong; 2013. [cited 2019 Feb 23]. Available from: Li, G. [李桂君]. (2013). Development of recording technology with FePt recording media and magnetic tunnel junction sensors with conetic alloy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5089977 ; http://dx.doi.org/10.5353/th_b5089977 ; http://hdl.handle.net/10722/192832.

Council of Science Editors:

李桂君; Li G. Development of recording technology with FePt recording media and magnetic tunnel junction sensors with conetic alloy. [Doctoral Dissertation]. University of Hong Kong; 2013. Available from: Li, G. [李桂君]. (2013). Development of recording technology with FePt recording media and magnetic tunnel junction sensors with conetic alloy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5089977 ; http://dx.doi.org/10.5353/th_b5089977 ; http://hdl.handle.net/10722/192832


University of Hong Kong

12. 雷志强; Lei, Zhiqiang. Low-frequency noise study of magnetic tunnel junctions and their applications on biomarker immunoassay.

Degree: PhD, 2013, University of Hong Kong

The noise performances of Al2O3-based magnetic tunnel junctions (MTJs) in the low-frequency regime were systematically studied. Conetic alloy Ni77Fe14Cu5Mo4 was deposited as both the MTJ… (more)

Subjects/Keywords: Magnetoresistance; Immunoassay

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APA (6th Edition):

雷志强; Lei, Z. (2013). Low-frequency noise study of magnetic tunnel junctions and their applications on biomarker immunoassay. (Doctoral Dissertation). University of Hong Kong. Retrieved from Lei, Z. [雷志强]. (2013). Low-frequency noise study of magnetic tunnel junctions and their applications on biomarker immunoassay. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5106517 ; http://dx.doi.org/10.5353/th_b5106517 ; http://hdl.handle.net/10722/193413

Chicago Manual of Style (16th Edition):

雷志强; Lei, Zhiqiang. “Low-frequency noise study of magnetic tunnel junctions and their applications on biomarker immunoassay.” 2013. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Lei, Z. [雷志强]. (2013). Low-frequency noise study of magnetic tunnel junctions and their applications on biomarker immunoassay. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5106517 ; http://dx.doi.org/10.5353/th_b5106517 ; http://hdl.handle.net/10722/193413.

MLA Handbook (7th Edition):

雷志强; Lei, Zhiqiang. “Low-frequency noise study of magnetic tunnel junctions and their applications on biomarker immunoassay.” 2013. Web. 23 Feb 2019.

Vancouver:

雷志强; Lei Z. Low-frequency noise study of magnetic tunnel junctions and their applications on biomarker immunoassay. [Internet] [Doctoral dissertation]. University of Hong Kong; 2013. [cited 2019 Feb 23]. Available from: Lei, Z. [雷志强]. (2013). Low-frequency noise study of magnetic tunnel junctions and their applications on biomarker immunoassay. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5106517 ; http://dx.doi.org/10.5353/th_b5106517 ; http://hdl.handle.net/10722/193413.

Council of Science Editors:

雷志强; Lei Z. Low-frequency noise study of magnetic tunnel junctions and their applications on biomarker immunoassay. [Doctoral Dissertation]. University of Hong Kong; 2013. Available from: Lei, Z. [雷志强]. (2013). Low-frequency noise study of magnetic tunnel junctions and their applications on biomarker immunoassay. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5106517 ; http://dx.doi.org/10.5353/th_b5106517 ; http://hdl.handle.net/10722/193413


University of Hong Kong

13. Zhu, Ling. Manipulating optical emission from light-emitting diodes and their applications.

Degree: PhD, 2011, University of Hong Kong

 Material properties, coupled with typical device structures of GaN-based light-emitting diode (LED) wafer give rise to Lambertian emission patterns with large beam divergence. However, this… (more)

Subjects/Keywords: Light emitting diodes.

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APA (6th Edition):

Zhu, L. (2011). Manipulating optical emission from light-emitting diodes and their applications. (Doctoral Dissertation). University of Hong Kong. Retrieved from Zhu, L. [朱玲]. (2011). Manipulating optical emission from light-emitting diodes and their applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4729746 ; http://dx.doi.org/10.5353/th_b4729746 ; http://hdl.handle.net/10722/146150

Chicago Manual of Style (16th Edition):

Zhu, Ling. “Manipulating optical emission from light-emitting diodes and their applications.” 2011. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Zhu, L. [朱玲]. (2011). Manipulating optical emission from light-emitting diodes and their applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4729746 ; http://dx.doi.org/10.5353/th_b4729746 ; http://hdl.handle.net/10722/146150.

MLA Handbook (7th Edition):

Zhu, Ling. “Manipulating optical emission from light-emitting diodes and their applications.” 2011. Web. 23 Feb 2019.

Vancouver:

Zhu L. Manipulating optical emission from light-emitting diodes and their applications. [Internet] [Doctoral dissertation]. University of Hong Kong; 2011. [cited 2019 Feb 23]. Available from: Zhu, L. [朱玲]. (2011). Manipulating optical emission from light-emitting diodes and their applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4729746 ; http://dx.doi.org/10.5353/th_b4729746 ; http://hdl.handle.net/10722/146150.

Council of Science Editors:

Zhu L. Manipulating optical emission from light-emitting diodes and their applications. [Doctoral Dissertation]. University of Hong Kong; 2011. Available from: Zhu, L. [朱玲]. (2011). Manipulating optical emission from light-emitting diodes and their applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4729746 ; http://dx.doi.org/10.5353/th_b4729746 ; http://hdl.handle.net/10722/146150


University of Hong Kong

14. 柯展東; Or, Chin-tung, David. Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation.

Degree: M. Phil., 2002, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Master

Master of Philosophy

Advisors/Committee Members: Lai, PT.

Subjects/Keywords: Thin film transistors.; Dielectrics.

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APA (6th Edition):

柯展東; Or, Chin-tung, D. (2002). Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. (Masters Thesis). University of Hong Kong. Retrieved from Or, C. D. [柯展東]. (2002). Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122659 ; http://dx.doi.org/10.5353/th_b3122659 ; http://hdl.handle.net/10722/33659

Chicago Manual of Style (16th Edition):

柯展東; Or, Chin-tung, David. “Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation.” 2002. Masters Thesis, University of Hong Kong. Accessed February 23, 2019. Or, C. D. [柯展東]. (2002). Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122659 ; http://dx.doi.org/10.5353/th_b3122659 ; http://hdl.handle.net/10722/33659.

MLA Handbook (7th Edition):

柯展東; Or, Chin-tung, David. “Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation.” 2002. Web. 23 Feb 2019.

Vancouver:

柯展東; Or, Chin-tung D. Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. [Internet] [Masters thesis]. University of Hong Kong; 2002. [cited 2019 Feb 23]. Available from: Or, C. D. [柯展東]. (2002). Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122659 ; http://dx.doi.org/10.5353/th_b3122659 ; http://hdl.handle.net/10722/33659.

Council of Science Editors:

柯展東; Or, Chin-tung D. Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. [Masters Thesis]. University of Hong Kong; 2002. Available from: Or, C. D. [柯展東]. (2002). Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122659 ; http://dx.doi.org/10.5353/th_b3122659 ; http://hdl.handle.net/10722/33659


University of Hong Kong

15. 鄧詠雯.; Tang, Wing-man. Development of high-quality gate insulators to improve the performanceof MISiC Schottky-diode hydrogen sensors.

Degree: M. Phil., 2004, University of Hong Kong

abstract

published_or_final_version

toc

Electrical and Electronic Engineering

Master

Master of Philosophy

Advisors/Committee Members: Lai, PT.

Subjects/Keywords: Hydrogen.; Gas detectors - Design and construction.; Electric insulators and insulation.

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APA (6th Edition):

鄧詠雯.; Tang, W. (2004). Development of high-quality gate insulators to improve the performanceof MISiC Schottky-diode hydrogen sensors. (Masters Thesis). University of Hong Kong. Retrieved from Tang, W. [鄧詠雯]. (2004). Development of high-quality gate insulators to improve the performance of MISiC Schottky-diode hydrogen sensors. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2973675 ; http://dx.doi.org/10.5353/th_b2973675 ; http://hdl.handle.net/10722/31200

Chicago Manual of Style (16th Edition):

鄧詠雯.; Tang, Wing-man. “Development of high-quality gate insulators to improve the performanceof MISiC Schottky-diode hydrogen sensors.” 2004. Masters Thesis, University of Hong Kong. Accessed February 23, 2019. Tang, W. [鄧詠雯]. (2004). Development of high-quality gate insulators to improve the performance of MISiC Schottky-diode hydrogen sensors. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2973675 ; http://dx.doi.org/10.5353/th_b2973675 ; http://hdl.handle.net/10722/31200.

MLA Handbook (7th Edition):

鄧詠雯.; Tang, Wing-man. “Development of high-quality gate insulators to improve the performanceof MISiC Schottky-diode hydrogen sensors.” 2004. Web. 23 Feb 2019.

Vancouver:

鄧詠雯.; Tang W. Development of high-quality gate insulators to improve the performanceof MISiC Schottky-diode hydrogen sensors. [Internet] [Masters thesis]. University of Hong Kong; 2004. [cited 2019 Feb 23]. Available from: Tang, W. [鄧詠雯]. (2004). Development of high-quality gate insulators to improve the performance of MISiC Schottky-diode hydrogen sensors. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2973675 ; http://dx.doi.org/10.5353/th_b2973675 ; http://hdl.handle.net/10722/31200.

Council of Science Editors:

鄧詠雯.; Tang W. Development of high-quality gate insulators to improve the performanceof MISiC Schottky-diode hydrogen sensors. [Masters Thesis]. University of Hong Kong; 2004. Available from: Tang, W. [鄧詠雯]. (2004). Development of high-quality gate insulators to improve the performance of MISiC Schottky-diode hydrogen sensors. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2973675 ; http://dx.doi.org/10.5353/th_b2973675 ; http://hdl.handle.net/10722/31200


University of Hong Kong

16. 潘昭豪.; Pun, Chiu-ho. Estimation of the impact of patterning error on MOSFET by conformal mapping.

Degree: M. Phil., 2004, University of Hong Kong

abstract

toc

published_or_final_version

Electrical and Electronic Engineering

Master

Master of Philosophy

Advisors/Committee Members: Lai, PT.

Subjects/Keywords: Conformal mapping.; Semiconductors - Design and construction.; Integrated circuits - Design and construction.; Integrated circuits - Testing.

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APA (6th Edition):

潘昭豪.; Pun, C. (2004). Estimation of the impact of patterning error on MOSFET by conformal mapping. (Masters Thesis). University of Hong Kong. Retrieved from Pun, C. [潘昭豪]. (2004). Estimation of the impact of patterning error on MOSFET by conformal mapping. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3073083 ; http://dx.doi.org/10.5353/th_b3073083 ; http://hdl.handle.net/10722/32180

Chicago Manual of Style (16th Edition):

潘昭豪.; Pun, Chiu-ho. “Estimation of the impact of patterning error on MOSFET by conformal mapping.” 2004. Masters Thesis, University of Hong Kong. Accessed February 23, 2019. Pun, C. [潘昭豪]. (2004). Estimation of the impact of patterning error on MOSFET by conformal mapping. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3073083 ; http://dx.doi.org/10.5353/th_b3073083 ; http://hdl.handle.net/10722/32180.

MLA Handbook (7th Edition):

潘昭豪.; Pun, Chiu-ho. “Estimation of the impact of patterning error on MOSFET by conformal mapping.” 2004. Web. 23 Feb 2019.

Vancouver:

潘昭豪.; Pun C. Estimation of the impact of patterning error on MOSFET by conformal mapping. [Internet] [Masters thesis]. University of Hong Kong; 2004. [cited 2019 Feb 23]. Available from: Pun, C. [潘昭豪]. (2004). Estimation of the impact of patterning error on MOSFET by conformal mapping. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3073083 ; http://dx.doi.org/10.5353/th_b3073083 ; http://hdl.handle.net/10722/32180.

Council of Science Editors:

潘昭豪.; Pun C. Estimation of the impact of patterning error on MOSFET by conformal mapping. [Masters Thesis]. University of Hong Kong; 2004. Available from: Pun, C. [潘昭豪]. (2004). Estimation of the impact of patterning error on MOSFET by conformal mapping. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3073083 ; http://dx.doi.org/10.5353/th_b3073083 ; http://hdl.handle.net/10722/32180


University of Hong Kong

17. Lin, Limin. A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC.

Degree: PhD, 2007, University of Hong Kong

published_or_final_version

abstract

Electrical and Electronic Engineering

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Lai, PT.

Subjects/Keywords: Dielectrics.; Wide gap semiconductors.; Gallium nitride.; Silicon carbide.; Gate array circuits

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APA (6th Edition):

Lin, L. (2007). A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC. (Doctoral Dissertation). University of Hong Kong. Retrieved from Lin, L. [林立旻]. (2007). A study of gate dielectrics for wide-bandgap semiconductors : GaN & SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3932252 ; http://dx.doi.org/10.5353/th_b3932252 ; http://hdl.handle.net/10722/51518

Chicago Manual of Style (16th Edition):

Lin, Limin. “A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC.” 2007. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Lin, L. [林立旻]. (2007). A study of gate dielectrics for wide-bandgap semiconductors : GaN & SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3932252 ; http://dx.doi.org/10.5353/th_b3932252 ; http://hdl.handle.net/10722/51518.

MLA Handbook (7th Edition):

Lin, Limin. “A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC.” 2007. Web. 23 Feb 2019.

Vancouver:

Lin L. A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC. [Internet] [Doctoral dissertation]. University of Hong Kong; 2007. [cited 2019 Feb 23]. Available from: Lin, L. [林立旻]. (2007). A study of gate dielectrics for wide-bandgap semiconductors : GaN & SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3932252 ; http://dx.doi.org/10.5353/th_b3932252 ; http://hdl.handle.net/10722/51518.

Council of Science Editors:

Lin L. A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC. [Doctoral Dissertation]. University of Hong Kong; 2007. Available from: Lin, L. [林立旻]. (2007). A study of gate dielectrics for wide-bandgap semiconductors : GaN & SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3932252 ; http://dx.doi.org/10.5353/th_b3932252 ; http://hdl.handle.net/10722/51518


University of Hong Kong

18. 關敏志.; Kwan, Man-chi. Mobility enhancement for organic thin-film transistors using nitridation method.

Degree: M. Phil., 2006, University of Hong Kong

published_or_final_version

abstract

Electrical and Electronic Engineering

Master

Master of Philosophy

Advisors/Committee Members: Lai, PT.

Subjects/Keywords: Pentacene.; Field-effect transistors.; Thin film transistors.; Nitration.

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APA (6th Edition):

關敏志.; Kwan, M. (2006). Mobility enhancement for organic thin-film transistors using nitridation method. (Masters Thesis). University of Hong Kong. Retrieved from Kwan, M. [關敏志]. (2006). Mobility enhancement for organic thin-film transistors using nitridation method. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3718158 ; http://dx.doi.org/10.5353/th_b3718158 ; http://hdl.handle.net/10722/51519

Chicago Manual of Style (16th Edition):

關敏志.; Kwan, Man-chi. “Mobility enhancement for organic thin-film transistors using nitridation method.” 2006. Masters Thesis, University of Hong Kong. Accessed February 23, 2019. Kwan, M. [關敏志]. (2006). Mobility enhancement for organic thin-film transistors using nitridation method. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3718158 ; http://dx.doi.org/10.5353/th_b3718158 ; http://hdl.handle.net/10722/51519.

MLA Handbook (7th Edition):

關敏志.; Kwan, Man-chi. “Mobility enhancement for organic thin-film transistors using nitridation method.” 2006. Web. 23 Feb 2019.

Vancouver:

關敏志.; Kwan M. Mobility enhancement for organic thin-film transistors using nitridation method. [Internet] [Masters thesis]. University of Hong Kong; 2006. [cited 2019 Feb 23]. Available from: Kwan, M. [關敏志]. (2006). Mobility enhancement for organic thin-film transistors using nitridation method. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3718158 ; http://dx.doi.org/10.5353/th_b3718158 ; http://hdl.handle.net/10722/51519.

Council of Science Editors:

關敏志.; Kwan M. Mobility enhancement for organic thin-film transistors using nitridation method. [Masters Thesis]. University of Hong Kong; 2006. Available from: Kwan, M. [關敏志]. (2006). Mobility enhancement for organic thin-film transistors using nitridation method. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3718158 ; http://dx.doi.org/10.5353/th_b3718158 ; http://hdl.handle.net/10722/51519


University of Hong Kong

19. Cheng, Kam-ho. A study on novel organic semiconductor devices: light-emitting diode and thin-film transistor.

Degree: PhD, 2009, University of Hong Kong

published_or_final_version

Chemistry

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Lai, PT, Che, CM.

Subjects/Keywords: Light-emitting diodes.; Organic semiconductors - Design and construction.; Thin-film transistors.

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APA (6th Edition):

Cheng, K. (2009). A study on novel organic semiconductor devices: light-emitting diode and thin-film transistor. (Doctoral Dissertation). University of Hong Kong. Retrieved from Cheng, K. [鄭錦豪]. (2009). A study on novel organic semiconductor devices : light-emitting diode and thin-film transistor. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4308551 ; http://dx.doi.org/10.5353/th_b4308551 ; http://hdl.handle.net/10722/56631

Chicago Manual of Style (16th Edition):

Cheng, Kam-ho. “A study on novel organic semiconductor devices: light-emitting diode and thin-film transistor.” 2009. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Cheng, K. [鄭錦豪]. (2009). A study on novel organic semiconductor devices : light-emitting diode and thin-film transistor. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4308551 ; http://dx.doi.org/10.5353/th_b4308551 ; http://hdl.handle.net/10722/56631.

MLA Handbook (7th Edition):

Cheng, Kam-ho. “A study on novel organic semiconductor devices: light-emitting diode and thin-film transistor.” 2009. Web. 23 Feb 2019.

Vancouver:

Cheng K. A study on novel organic semiconductor devices: light-emitting diode and thin-film transistor. [Internet] [Doctoral dissertation]. University of Hong Kong; 2009. [cited 2019 Feb 23]. Available from: Cheng, K. [鄭錦豪]. (2009). A study on novel organic semiconductor devices : light-emitting diode and thin-film transistor. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4308551 ; http://dx.doi.org/10.5353/th_b4308551 ; http://hdl.handle.net/10722/56631.

Council of Science Editors:

Cheng K. A study on novel organic semiconductor devices: light-emitting diode and thin-film transistor. [Doctoral Dissertation]. University of Hong Kong; 2009. Available from: Cheng, K. [鄭錦豪]. (2009). A study on novel organic semiconductor devices : light-emitting diode and thin-film transistor. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4308551 ; http://dx.doi.org/10.5353/th_b4308551 ; http://hdl.handle.net/10722/56631


University of Hong Kong

20. Zhao, Xiaoguang. Probing biological structures with magnetic resonance imaging.

Degree: M. Phil., 2008, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Master

Master of Philosophy

Advisors/Committee Members: Lai, PT, Wu, EX.

Subjects/Keywords: Tumors - Imaging.; Olfactory nerve.; Magnetic resonance imaging.

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APA (6th Edition):

Zhao, X. (2008). Probing biological structures with magnetic resonance imaging. (Masters Thesis). University of Hong Kong. Retrieved from Zhao, X. [赵晓光]. (2008). Probing biological structures with magnetic resonance imaging. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4068747 ; http://dx.doi.org/10.5353/th_b4068747 ; http://hdl.handle.net/10722/51450

Chicago Manual of Style (16th Edition):

Zhao, Xiaoguang. “Probing biological structures with magnetic resonance imaging.” 2008. Masters Thesis, University of Hong Kong. Accessed February 23, 2019. Zhao, X. [赵晓光]. (2008). Probing biological structures with magnetic resonance imaging. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4068747 ; http://dx.doi.org/10.5353/th_b4068747 ; http://hdl.handle.net/10722/51450.

MLA Handbook (7th Edition):

Zhao, Xiaoguang. “Probing biological structures with magnetic resonance imaging.” 2008. Web. 23 Feb 2019.

Vancouver:

Zhao X. Probing biological structures with magnetic resonance imaging. [Internet] [Masters thesis]. University of Hong Kong; 2008. [cited 2019 Feb 23]. Available from: Zhao, X. [赵晓光]. (2008). Probing biological structures with magnetic resonance imaging. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4068747 ; http://dx.doi.org/10.5353/th_b4068747 ; http://hdl.handle.net/10722/51450.

Council of Science Editors:

Zhao X. Probing biological structures with magnetic resonance imaging. [Masters Thesis]. University of Hong Kong; 2008. Available from: Zhao, X. [赵晓光]. (2008). Probing biological structures with magnetic resonance imaging. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4068747 ; http://dx.doi.org/10.5353/th_b4068747 ; http://hdl.handle.net/10722/51450


University of Hong Kong

21. 馮慧琳; Fung, Wai-lam. A novel all-optical wavelength exchange in highly nonlinear fiber.

Degree: M. Phil., 2007, University of Hong Kong

published_or_final_version

abstract

Electrical and Electronic Engineering

Master

Master of Philosophy

Advisors/Committee Members: Lai, PT, Wong, KKY.

Subjects/Keywords: Wavelengths.; Fiber optics.; Nonlinear optics.

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APA (6th Edition):

馮慧琳; Fung, W. (2007). A novel all-optical wavelength exchange in highly nonlinear fiber. (Masters Thesis). University of Hong Kong. Retrieved from Fung, W. [馮慧琳]. (2007). A novel all-optical wavelength exchange in highly nonlinear fiber. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3955878 ; http://dx.doi.org/10.5353/th_b3955878 ; http://hdl.handle.net/10722/51535

Chicago Manual of Style (16th Edition):

馮慧琳; Fung, Wai-lam. “A novel all-optical wavelength exchange in highly nonlinear fiber.” 2007. Masters Thesis, University of Hong Kong. Accessed February 23, 2019. Fung, W. [馮慧琳]. (2007). A novel all-optical wavelength exchange in highly nonlinear fiber. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3955878 ; http://dx.doi.org/10.5353/th_b3955878 ; http://hdl.handle.net/10722/51535.

MLA Handbook (7th Edition):

馮慧琳; Fung, Wai-lam. “A novel all-optical wavelength exchange in highly nonlinear fiber.” 2007. Web. 23 Feb 2019.

Vancouver:

馮慧琳; Fung W. A novel all-optical wavelength exchange in highly nonlinear fiber. [Internet] [Masters thesis]. University of Hong Kong; 2007. [cited 2019 Feb 23]. Available from: Fung, W. [馮慧琳]. (2007). A novel all-optical wavelength exchange in highly nonlinear fiber. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3955878 ; http://dx.doi.org/10.5353/th_b3955878 ; http://hdl.handle.net/10722/51535.

Council of Science Editors:

馮慧琳; Fung W. A novel all-optical wavelength exchange in highly nonlinear fiber. [Masters Thesis]. University of Hong Kong; 2007. Available from: Fung, W. [馮慧琳]. (2007). A novel all-optical wavelength exchange in highly nonlinear fiber. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3955878 ; http://dx.doi.org/10.5353/th_b3955878 ; http://hdl.handle.net/10722/51535


University of Hong Kong

22. 鄧詠雯.; Tang, Wing-man. MISiC Schottky-diode hydrogen sensors with different gate insulators.

Degree: PhD, 2008, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Leung, CH, Lai, PT.

Subjects/Keywords: Electric insulators and insulation.; Hydrogen.; Gas detectors - Design and construction.

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APA (6th Edition):

鄧詠雯.; Tang, W. (2008). MISiC Schottky-diode hydrogen sensors with different gate insulators. (Doctoral Dissertation). University of Hong Kong. Retrieved from Tang, W. [鄧詠雯]. (2008). MISiC Schottky-diode hydrogen sensors with different gate insulators. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4098777 ; http://dx.doi.org/10.5353/th_b4098777 ; http://hdl.handle.net/10722/51536

Chicago Manual of Style (16th Edition):

鄧詠雯.; Tang, Wing-man. “MISiC Schottky-diode hydrogen sensors with different gate insulators.” 2008. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Tang, W. [鄧詠雯]. (2008). MISiC Schottky-diode hydrogen sensors with different gate insulators. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4098777 ; http://dx.doi.org/10.5353/th_b4098777 ; http://hdl.handle.net/10722/51536.

MLA Handbook (7th Edition):

鄧詠雯.; Tang, Wing-man. “MISiC Schottky-diode hydrogen sensors with different gate insulators.” 2008. Web. 23 Feb 2019.

Vancouver:

鄧詠雯.; Tang W. MISiC Schottky-diode hydrogen sensors with different gate insulators. [Internet] [Doctoral dissertation]. University of Hong Kong; 2008. [cited 2019 Feb 23]. Available from: Tang, W. [鄧詠雯]. (2008). MISiC Schottky-diode hydrogen sensors with different gate insulators. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4098777 ; http://dx.doi.org/10.5353/th_b4098777 ; http://hdl.handle.net/10722/51536.

Council of Science Editors:

鄧詠雯.; Tang W. MISiC Schottky-diode hydrogen sensors with different gate insulators. [Doctoral Dissertation]. University of Hong Kong; 2008. Available from: Tang, W. [鄧詠雯]. (2008). MISiC Schottky-diode hydrogen sensors with different gate insulators. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4098777 ; http://dx.doi.org/10.5353/th_b4098777 ; http://hdl.handle.net/10722/51536


University of Hong Kong

23. Yuen, Mai-yan. Semiconducting and electroluminescent cyclometalated platinum (II) complexes: from molecular functionalmaterials to supramolecular architecture and self-assemblednanomaterials.

Degree: PhD, 2010, University of Hong Kong

published_or_final_version

Chemistry

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Lai, PT, Che, CM.

Subjects/Keywords: Platinum compounds.; Complex compounds.; Electroluminescent devices.; Nanostructured materials.; Supramolecular chemistry.

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APA (6th Edition):

Yuen, M. (2010). Semiconducting and electroluminescent cyclometalated platinum (II) complexes: from molecular functionalmaterials to supramolecular architecture and self-assemblednanomaterials. (Doctoral Dissertation). University of Hong Kong. Retrieved from Yuen, M. [袁美恩]. (2010). Semiconducting and electroluminescent cyclometalated platinum (II) complexes : from molecular functional materials to supramolecular architecture and self-assembled nanomaterials. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4475812 ; http://dx.doi.org/10.5353/th_b4475812 ; http://hdl.handle.net/10722/130907

Chicago Manual of Style (16th Edition):

Yuen, Mai-yan. “Semiconducting and electroluminescent cyclometalated platinum (II) complexes: from molecular functionalmaterials to supramolecular architecture and self-assemblednanomaterials.” 2010. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Yuen, M. [袁美恩]. (2010). Semiconducting and electroluminescent cyclometalated platinum (II) complexes : from molecular functional materials to supramolecular architecture and self-assembled nanomaterials. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4475812 ; http://dx.doi.org/10.5353/th_b4475812 ; http://hdl.handle.net/10722/130907.

MLA Handbook (7th Edition):

Yuen, Mai-yan. “Semiconducting and electroluminescent cyclometalated platinum (II) complexes: from molecular functionalmaterials to supramolecular architecture and self-assemblednanomaterials.” 2010. Web. 23 Feb 2019.

Vancouver:

Yuen M. Semiconducting and electroluminescent cyclometalated platinum (II) complexes: from molecular functionalmaterials to supramolecular architecture and self-assemblednanomaterials. [Internet] [Doctoral dissertation]. University of Hong Kong; 2010. [cited 2019 Feb 23]. Available from: Yuen, M. [袁美恩]. (2010). Semiconducting and electroluminescent cyclometalated platinum (II) complexes : from molecular functional materials to supramolecular architecture and self-assembled nanomaterials. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4475812 ; http://dx.doi.org/10.5353/th_b4475812 ; http://hdl.handle.net/10722/130907.

Council of Science Editors:

Yuen M. Semiconducting and electroluminescent cyclometalated platinum (II) complexes: from molecular functionalmaterials to supramolecular architecture and self-assemblednanomaterials. [Doctoral Dissertation]. University of Hong Kong; 2010. Available from: Yuen, M. [袁美恩]. (2010). Semiconducting and electroluminescent cyclometalated platinum (II) complexes : from molecular functional materials to supramolecular architecture and self-assembled nanomaterials. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4475812 ; http://dx.doi.org/10.5353/th_b4475812 ; http://hdl.handle.net/10722/130907


University of Hong Kong

24. Chan, Yung. Optical functions of wide band gap semiconductors.

Degree: PhD, 2004, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Lai, PT, Djurisic, A.

Subjects/Keywords: Wide gap semiconductors - Optical properties.

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APA (6th Edition):

Chan, Y. (2004). Optical functions of wide band gap semiconductors. (Doctoral Dissertation). University of Hong Kong. Retrieved from Chan, Y. [陳勇]. (2004). Optical functions of wide band gap semiconductors. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4501533 ; http://dx.doi.org/10.5353/th_b4501533 ; http://hdl.handle.net/10722/131632

Chicago Manual of Style (16th Edition):

Chan, Yung. “Optical functions of wide band gap semiconductors.” 2004. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Chan, Y. [陳勇]. (2004). Optical functions of wide band gap semiconductors. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4501533 ; http://dx.doi.org/10.5353/th_b4501533 ; http://hdl.handle.net/10722/131632.

MLA Handbook (7th Edition):

Chan, Yung. “Optical functions of wide band gap semiconductors.” 2004. Web. 23 Feb 2019.

Vancouver:

Chan Y. Optical functions of wide band gap semiconductors. [Internet] [Doctoral dissertation]. University of Hong Kong; 2004. [cited 2019 Feb 23]. Available from: Chan, Y. [陳勇]. (2004). Optical functions of wide band gap semiconductors. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4501533 ; http://dx.doi.org/10.5353/th_b4501533 ; http://hdl.handle.net/10722/131632.

Council of Science Editors:

Chan Y. Optical functions of wide band gap semiconductors. [Doctoral Dissertation]. University of Hong Kong; 2004. Available from: Chan, Y. [陳勇]. (2004). Optical functions of wide band gap semiconductors. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4501533 ; http://dx.doi.org/10.5353/th_b4501533 ; http://hdl.handle.net/10722/131632


University of Hong Kong

25. Xiang, Haifeng. Organic optoelectronic devices based on platinum(II) complexes and polymers.

Degree: PhD, 2005, University of Hong Kong

abstract

published_or_final_version

Electrical and Electronic Engineering

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Lai, PT, Chui, PC, Che, CM.

Subjects/Keywords: Optoelectronic devices - Materials.; Platinum compounds.; Polymers.; Light emitting diodes.; Solar cells.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Xiang, H. (2005). Organic optoelectronic devices based on platinum(II) complexes and polymers. (Doctoral Dissertation). University of Hong Kong. Retrieved from Xiang, H.. (2005). Organic optoelectronic devices based on platinum(II) complexes and polymers. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3483011 ; http://dx.doi.org/10.5353/th_b3483011 ; http://hdl.handle.net/10722/26740

Chicago Manual of Style (16th Edition):

Xiang, Haifeng. “Organic optoelectronic devices based on platinum(II) complexes and polymers.” 2005. Doctoral Dissertation, University of Hong Kong. Accessed February 23, 2019. Xiang, H.. (2005). Organic optoelectronic devices based on platinum(II) complexes and polymers. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3483011 ; http://dx.doi.org/10.5353/th_b3483011 ; http://hdl.handle.net/10722/26740.

MLA Handbook (7th Edition):

Xiang, Haifeng. “Organic optoelectronic devices based on platinum(II) complexes and polymers.” 2005. Web. 23 Feb 2019.

Vancouver:

Xiang H. Organic optoelectronic devices based on platinum(II) complexes and polymers. [Internet] [Doctoral dissertation]. University of Hong Kong; 2005. [cited 2019 Feb 23]. Available from: Xiang, H.. (2005). Organic optoelectronic devices based on platinum(II) complexes and polymers. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3483011 ; http://dx.doi.org/10.5353/th_b3483011 ; http://hdl.handle.net/10722/26740.

Council of Science Editors:

Xiang H. Organic optoelectronic devices based on platinum(II) complexes and polymers. [Doctoral Dissertation]. University of Hong Kong; 2005. Available from: Xiang, H.. (2005). Organic optoelectronic devices based on platinum(II) complexes and polymers. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3483011 ; http://dx.doi.org/10.5353/th_b3483011 ; http://hdl.handle.net/10722/26740

.