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You searched for +publisher:"University of Florida" +contributor:("LAW,MARK E"). Showing records 1 – 21 of 21 total matches.

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University of Florida

1. Gupta, Amit. Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation.

Degree: PhD, Electrical and Computer Engineering, 2013, University of Florida

 AlGaN/GaN HEMT technology is promising for RF and high power applications. However commercial usability of this technology is currently hindered because of its limited electrical… (more)

Subjects/Keywords: Electric current; Electric fields; Electric potential; Electrical bias; Mechanical stress; Narrative devices; Semiconductors; Temperature dependence; Tensile stress; Time dependence; algan  – degradation  – diffusion  – gan  – hemt  – reliability  – stress  – time-dependent

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APA (6th Edition):

Gupta, A. (2013). Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0045920

Chicago Manual of Style (16th Edition):

Gupta, Amit. “Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation.” 2013. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0045920.

MLA Handbook (7th Edition):

Gupta, Amit. “Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation.” 2013. Web. 16 Sep 2019.

Vancouver:

Gupta A. Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation. [Internet] [Doctoral dissertation]. University of Florida; 2013. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0045920.

Council of Science Editors:

Gupta A. Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation. [Doctoral Dissertation]. University of Florida; 2013. Available from: http://ufdc.ufl.edu/UFE0045920


University of Florida

2. Kumar, Ashish. Nickel Silicide Growth Modeling Using Level Set Methods.

Degree: PhD, Electrical and Computer Engineering, 2013, University of Florida

 Nickel silicide is being used as a Local-Interconnect (LI) and source-drain contact material in current CMOS technology. For scaling technologies it has become extremely important… (more)

Subjects/Keywords: Arsenic; Chemicals; Compressive stress; Modeling; Nickel; Oxides; Silicides; Silicon; Simulations; Thermal stress; diffusion  – silicide  – simulations

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APA (6th Edition):

Kumar, A. (2013). Nickel Silicide Growth Modeling Using Level Set Methods. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0045954

Chicago Manual of Style (16th Edition):

Kumar, Ashish. “Nickel Silicide Growth Modeling Using Level Set Methods.” 2013. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0045954.

MLA Handbook (7th Edition):

Kumar, Ashish. “Nickel Silicide Growth Modeling Using Level Set Methods.” 2013. Web. 16 Sep 2019.

Vancouver:

Kumar A. Nickel Silicide Growth Modeling Using Level Set Methods. [Internet] [Doctoral dissertation]. University of Florida; 2013. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0045954.

Council of Science Editors:

Kumar A. Nickel Silicide Growth Modeling Using Level Set Methods. [Doctoral Dissertation]. University of Florida; 2013. Available from: http://ufdc.ufl.edu/UFE0045954


University of Florida

3. Mukherjee, Shrijit. Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors.

Degree: PhD, Electrical and Computer Engineering, 2017, University of Florida

 GaN based devices have reached a point in terms of processing maturity where the favorable wide-band gap related properties can be implemented in several commercial… (more)

Subjects/Keywords: gan  – hemt  – rf  – tcad  – transient  – traps

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APA (6th Edition):

Mukherjee, S. (2017). Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0051559

Chicago Manual of Style (16th Edition):

Mukherjee, Shrijit. “Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors.” 2017. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0051559.

MLA Handbook (7th Edition):

Mukherjee, Shrijit. “Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors.” 2017. Web. 16 Sep 2019.

Vancouver:

Mukherjee S. Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors. [Internet] [Doctoral dissertation]. University of Florida; 2017. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0051559.

Council of Science Editors:

Mukherjee S. Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors. [Doctoral Dissertation]. University of Florida; 2017. Available from: http://ufdc.ufl.edu/UFE0051559


University of Florida

4. Rao, Hemant P. Advanced Device Reliability Study of GaN HEMTs Using Low Frequency Noise Spectroscopy.

Degree: PhD, Electrical and Computer Engineering, 2012, University of Florida

 AlGaN/GaN HEMTs have entered commercial production from 2005 and have demonstrated excellent performance levels for high power RF applications like cellular 3G and WiMax base… (more)

Subjects/Keywords: Channel noise; Direct current; Drains; Electric current; Electric potential; Electrons; Low noise; Narrative devices; Noise measurement; Noise temperature; gallium  – low-frequency  – nitride  – noise  – reliability  – semiconductor

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APA (6th Edition):

Rao, H. P. (2012). Advanced Device Reliability Study of GaN HEMTs Using Low Frequency Noise Spectroscopy. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0043977

Chicago Manual of Style (16th Edition):

Rao, Hemant P. “Advanced Device Reliability Study of GaN HEMTs Using Low Frequency Noise Spectroscopy.” 2012. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0043977.

MLA Handbook (7th Edition):

Rao, Hemant P. “Advanced Device Reliability Study of GaN HEMTs Using Low Frequency Noise Spectroscopy.” 2012. Web. 16 Sep 2019.

Vancouver:

Rao HP. Advanced Device Reliability Study of GaN HEMTs Using Low Frequency Noise Spectroscopy. [Internet] [Doctoral dissertation]. University of Florida; 2012. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0043977.

Council of Science Editors:

Rao HP. Advanced Device Reliability Study of GaN HEMTs Using Low Frequency Noise Spectroscopy. [Doctoral Dissertation]. University of Florida; 2012. Available from: http://ufdc.ufl.edu/UFE0043977


University of Florida

5. Sarkar, Dabraj. Design Optimization of Thin Crystalline-Silicon Solar Cells.

Degree: PhD, Electrical and Computer Engineering, 2012, University of Florida

 Solar cells in thin crystalline-silicon are of much interest because of their potential high efficiencies and low cost. However, many previous attempts to attain thin… (more)

Subjects/Keywords: Cells; Doping; Heterojunctions; Metal foils; Minority carriers; Passivity; Photovoltaic cells; Plasmas; Silicon; Simulations; amorphous  – back-contact  – bandgap-narrowing  – bsf  – cell  – characterization  – crystalline-silicon  – cvd  – degeneracy  – design  – exfoliation  – fermi-dirac  – floods  – heavy-doping  – heterojunction  – hydrogenated  – interdigitated  – lifetime  – minority-carrier  – modeling  – passivation  – photovoltaic  – plasma-damage  – remote-plasma  – rpcvd  – semiconductor-on-metal  – silicon  – simulation  – solar  – som  – surface-passivation  – thin

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APA (6th Edition):

Sarkar, D. (2012). Design Optimization of Thin Crystalline-Silicon Solar Cells. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0044638

Chicago Manual of Style (16th Edition):

Sarkar, Dabraj. “Design Optimization of Thin Crystalline-Silicon Solar Cells.” 2012. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0044638.

MLA Handbook (7th Edition):

Sarkar, Dabraj. “Design Optimization of Thin Crystalline-Silicon Solar Cells.” 2012. Web. 16 Sep 2019.

Vancouver:

Sarkar D. Design Optimization of Thin Crystalline-Silicon Solar Cells. [Internet] [Doctoral dissertation]. University of Florida; 2012. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0044638.

Council of Science Editors:

Sarkar D. Design Optimization of Thin Crystalline-Silicon Solar Cells. [Doctoral Dissertation]. University of Florida; 2012. Available from: http://ufdc.ufl.edu/UFE0044638


University of Florida

6. Kennon, Ethan L. Behavior of Highly Te Doped InGaAs.

Degree: PhD, Materials Science and Engineering, 2017, University of Florida

 The exponential growth of semiconductor technology has allowed it to reach the prevalence that we see today. In order for growth to continue, new materials… (more)

Subjects/Keywords: defects  – dft  – mocvd  – semiconductors

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APA (6th Edition):

Kennon, E. L. (2017). Behavior of Highly Te Doped InGaAs. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0051373

Chicago Manual of Style (16th Edition):

Kennon, Ethan L. “Behavior of Highly Te Doped InGaAs.” 2017. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0051373.

MLA Handbook (7th Edition):

Kennon, Ethan L. “Behavior of Highly Te Doped InGaAs.” 2017. Web. 16 Sep 2019.

Vancouver:

Kennon EL. Behavior of Highly Te Doped InGaAs. [Internet] [Doctoral dissertation]. University of Florida; 2017. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0051373.

Council of Science Editors:

Kennon EL. Behavior of Highly Te Doped InGaAs. [Doctoral Dissertation]. University of Florida; 2017. Available from: http://ufdc.ufl.edu/UFE0051373


University of Florida

7. Lind, Aaron G. Dopant-Defect Interactions in Si Doped InGaAs.

Degree: PhD, Materials Science and Engineering, 2015, University of Florida

 III-V materials such as InGaAs and InAs may be good candidates for future, sub- 10nm n-MOS devices as their high electron injection velocities result in… (more)

Subjects/Keywords: Annealing; Atoms; Conceptual lattices; Doping; Dosage; Ion implantation; Ions; Point defects; Semiconductors; Solubility; activation  – implantation  – inas  – ingaas  – ion-implant

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APA (6th Edition):

Lind, A. G. (2015). Dopant-Defect Interactions in Si Doped InGaAs. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0049450

Chicago Manual of Style (16th Edition):

Lind, Aaron G. “Dopant-Defect Interactions in Si Doped InGaAs.” 2015. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0049450.

MLA Handbook (7th Edition):

Lind, Aaron G. “Dopant-Defect Interactions in Si Doped InGaAs.” 2015. Web. 16 Sep 2019.

Vancouver:

Lind AG. Dopant-Defect Interactions in Si Doped InGaAs. [Internet] [Doctoral dissertation]. University of Florida; 2015. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0049450.

Council of Science Editors:

Lind AG. Dopant-Defect Interactions in Si Doped InGaAs. [Doctoral Dissertation]. University of Florida; 2015. Available from: http://ufdc.ufl.edu/UFE0049450


University of Florida

8. Rowsey, Nicole L. Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers.

Degree: PhD, Electrical and Computer Engineering, 2012, University of Florida

 The electrical breakdown of oxides and oxide/semiconductor interfaces is one of the main reasons for device failure in integrated circuits, especially devices under high-stress conditions.… (more)

Subjects/Keywords: Continuity equations; Dosage; Electrons; Hydrogen; Irradiation; Oxides; Oxygen; Protons; Silicon; Simulations; charge  – defect  – dose  – eldrs  – enhanced  – fixed  – floods  – flooxs  – glpnp  – interface  – ionizing  – low  – mediated  – nit  – not  – oxide  – rate  – sensitivity  – simulation  – tcad  – tid  – total  – transport  – traps

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APA (6th Edition):

Rowsey, N. L. (2012). Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0044042

Chicago Manual of Style (16th Edition):

Rowsey, Nicole L. “Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers.” 2012. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0044042.

MLA Handbook (7th Edition):

Rowsey, Nicole L. “Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers.” 2012. Web. 16 Sep 2019.

Vancouver:

Rowsey NL. Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers. [Internet] [Doctoral dissertation]. University of Florida; 2012. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0044042.

Council of Science Editors:

Rowsey NL. Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers. [Doctoral Dissertation]. University of Florida; 2012. Available from: http://ufdc.ufl.edu/UFE0044042


University of Florida

9. Cummings, Daniel. Enhancements in CMOS Device Simulation for Single-Event Effects.

Degree: PhD, Electrical and Computer Engineering, 2010, University of Florida

 ENHANCEMENTS IN CMOS DEVICE SIMULATION FOR SINGLE-EVENT EFFECTS Single-event effects in microelectronics can cause changes in memory state in spaceborne, airborne, and even terrestrial electronics… (more)

Subjects/Keywords: Charge carriers; Diodes; Doping; Electric current; Electron holes; Electrons; Lasers; Modeling; Silicon; Simulations; adaptive, device, errors, finite, gridding, mobility, modelling, particle, radiation, seu, silicon, simulation, single, soft, strained

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APA (6th Edition):

Cummings, D. (2010). Enhancements in CMOS Device Simulation for Single-Event Effects. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0042432

Chicago Manual of Style (16th Edition):

Cummings, Daniel. “Enhancements in CMOS Device Simulation for Single-Event Effects.” 2010. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0042432.

MLA Handbook (7th Edition):

Cummings, Daniel. “Enhancements in CMOS Device Simulation for Single-Event Effects.” 2010. Web. 16 Sep 2019.

Vancouver:

Cummings D. Enhancements in CMOS Device Simulation for Single-Event Effects. [Internet] [Doctoral dissertation]. University of Florida; 2010. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0042432.

Council of Science Editors:

Cummings D. Enhancements in CMOS Device Simulation for Single-Event Effects. [Doctoral Dissertation]. University of Florida; 2010. Available from: http://ufdc.ufl.edu/UFE0042432


University of Florida

10. Morarka, Saurabh. 2-D Modeling of Solid Phase Epitaxial Regrowth Using Level Set Methods.

Degree: PhD, Electrical and Computer Engineering, 2010, University of Florida

 Solid Phase Epitxial Regrowth (SPER) has a huge technological relevance in the formation of source/drain regions of MOS devices. Source/drain regions are patterned amorphous regions… (more)

Subjects/Keywords: Annealing; Applied physics; Boron; Curvature; Ions; Modeling; Nucleation; Regrowth; Simulations; Velocity; dopants, epitaxy, floops, level, regrowth, semiconductor, silicon, sper

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APA (6th Edition):

Morarka, S. (2010). 2-D Modeling of Solid Phase Epitaxial Regrowth Using Level Set Methods. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0041076

Chicago Manual of Style (16th Edition):

Morarka, Saurabh. “2-D Modeling of Solid Phase Epitaxial Regrowth Using Level Set Methods.” 2010. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0041076.

MLA Handbook (7th Edition):

Morarka, Saurabh. “2-D Modeling of Solid Phase Epitaxial Regrowth Using Level Set Methods.” 2010. Web. 16 Sep 2019.

Vancouver:

Morarka S. 2-D Modeling of Solid Phase Epitaxial Regrowth Using Level Set Methods. [Internet] [Doctoral dissertation]. University of Florida; 2010. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0041076.

Council of Science Editors:

Morarka S. 2-D Modeling of Solid Phase Epitaxial Regrowth Using Level Set Methods. [Doctoral Dissertation]. University of Florida; 2010. Available from: http://ufdc.ufl.edu/UFE0041076


University of Florida

11. Cheney, David James. Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing.

Degree: PhD, Electrical and Computer Engineering, 2012, University of Florida

 The traditional industry-accepted method of determining the lifetime of a semiconductor is based-on acceleration aging through elevated operating temperatures. As the semiconductor technology advances, the… (more)

Subjects/Keywords: Data acquisition; Drains; Electric current; Electric potential; Electrons; Narrative devices; Optical pumping; Software; Stress tests; Wavelengths; gan  – hemt  – optical  – reliability  – semiconductor

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APA (6th Edition):

Cheney, D. J. (2012). Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0044885

Chicago Manual of Style (16th Edition):

Cheney, David James. “Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing.” 2012. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0044885.

MLA Handbook (7th Edition):

Cheney, David James. “Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing.” 2012. Web. 16 Sep 2019.

Vancouver:

Cheney DJ. Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing. [Internet] [Doctoral dissertation]. University of Florida; 2012. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0044885.

Council of Science Editors:

Cheney DJ. Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing. [Doctoral Dissertation]. University of Florida; 2012. Available from: http://ufdc.ufl.edu/UFE0044885


University of Florida

12. Horton, David C. Modeling mechanisms of degradation in GaN/AlGaN devices in both off and on states.

Degree: PhD, Materials Science and Engineering, 2014, University of Florida

 AlGaNGaN devices suffer from drain current degradation in both the ON and OFF states however the mechanism by which this degradation takes place is quite… (more)

Subjects/Keywords: Drains; Electric current; Electric fields; Electric potential; Electron energy; Electron tunneling; Electrons; Energy; Simulations; Structural strain; AlGaN  – GaN  – modeling  – piezoelectric

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APA (6th Edition):

Horton, D. C. (2014). Modeling mechanisms of degradation in GaN/AlGaN devices in both off and on states. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0045952

Chicago Manual of Style (16th Edition):

Horton, David C. “Modeling mechanisms of degradation in GaN/AlGaN devices in both off and on states.” 2014. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0045952.

MLA Handbook (7th Edition):

Horton, David C. “Modeling mechanisms of degradation in GaN/AlGaN devices in both off and on states.” 2014. Web. 16 Sep 2019.

Vancouver:

Horton DC. Modeling mechanisms of degradation in GaN/AlGaN devices in both off and on states. [Internet] [Doctoral dissertation]. University of Florida; 2014. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0045952.

Council of Science Editors:

Horton DC. Modeling mechanisms of degradation in GaN/AlGaN devices in both off and on states. [Doctoral Dissertation]. University of Florida; 2014. Available from: http://ufdc.ufl.edu/UFE0045952


University of Florida

13. Martin, Thomas P Jr. Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials.

Degree: PhD, Materials Science and Engineering, 2017, University of Florida

 It is well known that the oxidation of Silicon will inject interstitial atoms into the bulk, causing various effects such as OED and OSF. The… (more)

Subjects/Keywords: germanium  – ion-implantation  – oxidation  – silicon

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APA (6th Edition):

Martin, T. P. J. (2017). Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0051286

Chicago Manual of Style (16th Edition):

Martin, Thomas P Jr. “Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials.” 2017. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0051286.

MLA Handbook (7th Edition):

Martin, Thomas P Jr. “Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials.” 2017. Web. 16 Sep 2019.

Vancouver:

Martin TPJ. Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials. [Internet] [Doctoral dissertation]. University of Florida; 2017. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0051286.

Council of Science Editors:

Martin TPJ. Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials. [Doctoral Dissertation]. University of Florida; 2017. Available from: http://ufdc.ufl.edu/UFE0051286


University of Florida

14. Barrett, Caleb S. Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001).

Degree: PhD, Materials Science and Engineering, 2017, University of Florida

 GaAs was once called the material of the future for the semiconductor industry. Significant effort was directed towards the integration of high-performance GaAs on large… (more)

Subjects/Keywords: antiphase  – defects  – epitaxy  – gaas  – semiconductors

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APA (6th Edition):

Barrett, C. S. (2017). Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001). (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0051318

Chicago Manual of Style (16th Edition):

Barrett, Caleb S. “Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001).” 2017. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0051318.

MLA Handbook (7th Edition):

Barrett, Caleb S. “Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001).” 2017. Web. 16 Sep 2019.

Vancouver:

Barrett CS. Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001). [Internet] [Doctoral dissertation]. University of Florida; 2017. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0051318.

Council of Science Editors:

Barrett CS. Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001). [Doctoral Dissertation]. University of Florida; 2017. Available from: http://ufdc.ufl.edu/UFE0051318


University of Florida

15. Jin, Sidan. Boron Activation and Diffusion in Polycrystalline Silicon with Flash-Assist Rapid Thermal Annealing.

Degree: PhD, Materials Science and Engineering, 2011, University of Florida

 The rigorous scaling in dimensions for future generations of transistor fabrication demands ever steeper requirements for dopant solubility with minimal diffusion. Advanced annealing techniques such… (more)

Subjects/Keywords: Annealing; Atoms; Automatic picture transmission; Diffusion coefficient; Doping; Dosage; Electrons; Grain boundaries; Grain size; Ions; boron  – diffusion  – flash  – polysilicon

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APA (6th Edition):

Jin, S. (2011). Boron Activation and Diffusion in Polycrystalline Silicon with Flash-Assist Rapid Thermal Annealing. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0043733

Chicago Manual of Style (16th Edition):

Jin, Sidan. “Boron Activation and Diffusion in Polycrystalline Silicon with Flash-Assist Rapid Thermal Annealing.” 2011. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0043733.

MLA Handbook (7th Edition):

Jin, Sidan. “Boron Activation and Diffusion in Polycrystalline Silicon with Flash-Assist Rapid Thermal Annealing.” 2011. Web. 16 Sep 2019.

Vancouver:

Jin S. Boron Activation and Diffusion in Polycrystalline Silicon with Flash-Assist Rapid Thermal Annealing. [Internet] [Doctoral dissertation]. University of Florida; 2011. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0043733.

Council of Science Editors:

Jin S. Boron Activation and Diffusion in Polycrystalline Silicon with Flash-Assist Rapid Thermal Annealing. [Doctoral Dissertation]. University of Florida; 2011. Available from: http://ufdc.ufl.edu/UFE0043733


University of Florida

16. Darby, Blake L. Amorphization and Solid Phase Epitaxial Growth of Germanium.

Degree: PhD, Materials Science and Engineering, 2012, University of Florida

 The substrate orientation dependence on SPEG was studied for the first time in Ge.  The velocity showed a strong dependence on substrate orientation and the… (more)

Subjects/Keywords: Annealing; Applied physics; Compressive stress; Dosage; Germanium; Ions; Silicon; Solid phases; Stacking faults; Velocity; amorphization  – cmos  – germanium  – implantation  – solid-phase-epitaxy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Darby, B. L. (2012). Amorphization and Solid Phase Epitaxial Growth of Germanium. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0044891

Chicago Manual of Style (16th Edition):

Darby, Blake L. “Amorphization and Solid Phase Epitaxial Growth of Germanium.” 2012. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0044891.

MLA Handbook (7th Edition):

Darby, Blake L. “Amorphization and Solid Phase Epitaxial Growth of Germanium.” 2012. Web. 16 Sep 2019.

Vancouver:

Darby BL. Amorphization and Solid Phase Epitaxial Growth of Germanium. [Internet] [Doctoral dissertation]. University of Florida; 2012. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0044891.

Council of Science Editors:

Darby BL. Amorphization and Solid Phase Epitaxial Growth of Germanium. [Doctoral Dissertation]. University of Florida; 2012. Available from: http://ufdc.ufl.edu/UFE0044891


University of Florida

17. Holzworth, Monta Raymond, Jr. Impact of Electrically and Thermally Induced Physical Defects on the Reliability of AlGaN/GaN High Electron Mobility Transistors.

Degree: PhD, Materials Science and Engineering, 2013, University of Florida

 AlGaN/GaN high electron mobility transistors are unique for their combination of high temperature, high power, and high frequency applications.  Compared to Si, Ge, and compound… (more)

Subjects/Keywords: Automatic picture transmission; Drains; Eels; Electric fields; Electric potential; Electrons; Evaporation; Magnification; MODFETS; Oxides; algan  – gan  – hemt  – reliability

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APA (6th Edition):

Holzworth, Monta Raymond, J. (2013). Impact of Electrically and Thermally Induced Physical Defects on the Reliability of AlGaN/GaN High Electron Mobility Transistors. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0045931

Chicago Manual of Style (16th Edition):

Holzworth, Monta Raymond, Jr. “Impact of Electrically and Thermally Induced Physical Defects on the Reliability of AlGaN/GaN High Electron Mobility Transistors.” 2013. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0045931.

MLA Handbook (7th Edition):

Holzworth, Monta Raymond, Jr. “Impact of Electrically and Thermally Induced Physical Defects on the Reliability of AlGaN/GaN High Electron Mobility Transistors.” 2013. Web. 16 Sep 2019.

Vancouver:

Holzworth, Monta Raymond J. Impact of Electrically and Thermally Induced Physical Defects on the Reliability of AlGaN/GaN High Electron Mobility Transistors. [Internet] [Doctoral dissertation]. University of Florida; 2013. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0045931.

Council of Science Editors:

Holzworth, Monta Raymond J. Impact of Electrically and Thermally Induced Physical Defects on the Reliability of AlGaN/GaN High Electron Mobility Transistors. [Doctoral Dissertation]. University of Florida; 2013. Available from: http://ufdc.ufl.edu/UFE0045931


University of Florida

18. Hickey, Diane Patricia. Ion Implantation Induced Defect Formation and Amorphization in the Group IV Semiconductors Diamond, Silicon, and Germanium.

Degree: PhD, Materials Science and Engineering, 2007, University of Florida

 Silicon, which has been the workhorse of the semiconductor industry for the past several decades, is now being enhanced with other Group IV elements, such… (more)

Subjects/Keywords: Annealing; Atoms; Carbon; Crystals; Dosage; Electrons; Graphite; Imaging; Ions; Yield point; crystal, diamond, germanium, implantation, implants, ion, semiconductor, silicon, single

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hickey, D. P. (2007). Ion Implantation Induced Defect Formation and Amorphization in the Group IV Semiconductors Diamond, Silicon, and Germanium. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0021224

Chicago Manual of Style (16th Edition):

Hickey, Diane Patricia. “Ion Implantation Induced Defect Formation and Amorphization in the Group IV Semiconductors Diamond, Silicon, and Germanium.” 2007. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0021224.

MLA Handbook (7th Edition):

Hickey, Diane Patricia. “Ion Implantation Induced Defect Formation and Amorphization in the Group IV Semiconductors Diamond, Silicon, and Germanium.” 2007. Web. 16 Sep 2019.

Vancouver:

Hickey DP. Ion Implantation Induced Defect Formation and Amorphization in the Group IV Semiconductors Diamond, Silicon, and Germanium. [Internet] [Doctoral dissertation]. University of Florida; 2007. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0021224.

Council of Science Editors:

Hickey DP. Ion Implantation Induced Defect Formation and Amorphization in the Group IV Semiconductors Diamond, Silicon, and Germanium. [Doctoral Dissertation]. University of Florida; 2007. Available from: http://ufdc.ufl.edu/UFE0021224


University of Florida

19. Rudawski, Nicholas. Stressed Solid-Phase Epitaxial Growth of Silicon.

Degree: PhD, Materials Science and Engineering, 2008, University of Florida

 The solid-phase epitaxial growth (SPEG) process of the element silicon (Si) has long been important in integrated circuit fabrication. However, due to the increasingly prevalent… (more)

Subjects/Keywords: Annealing; Atoms; Compressive stress; Electrons; Impurities; Ions; Kinetics; Nucleation; Plane stress; Stress relaxation; crystallization, doping, epitaxial, growth, implantation, ion, phase, recrystallization, regrowth, semiconductor, si, silicon, solid, strain, stress, transformation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rudawski, N. (2008). Stressed Solid-Phase Epitaxial Growth of Silicon. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0022817

Chicago Manual of Style (16th Edition):

Rudawski, Nicholas. “Stressed Solid-Phase Epitaxial Growth of Silicon.” 2008. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0022817.

MLA Handbook (7th Edition):

Rudawski, Nicholas. “Stressed Solid-Phase Epitaxial Growth of Silicon.” 2008. Web. 16 Sep 2019.

Vancouver:

Rudawski N. Stressed Solid-Phase Epitaxial Growth of Silicon. [Internet] [Doctoral dissertation]. University of Florida; 2008. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0022817.

Council of Science Editors:

Rudawski N. Stressed Solid-Phase Epitaxial Growth of Silicon. [Doctoral Dissertation]. University of Florida; 2008. Available from: http://ufdc.ufl.edu/UFE0022817


University of Florida

20. Moore, John. Influence of Germanium Concentration and Homogeneous Boron Doping on Microstructure, Kinetics, and Sheet Resistance of Nickel Germanosilicide Thin Films.

Degree: PhD, Materials Science and Engineering, 2008, University of Florida

 This work studied the influence of Ge concentration and homogeneous B doping on the microstructure, kinetics, and sheet resistance of nickel germanosilicide thin films. Experimental… (more)

Subjects/Keywords: Activation energy; Annealing; Doping; Image analysis; Linear regression; Music analysis; Nickel; Precipitation; Silicides; Temperature resistance; agglomeration, germanosilicide, kinetics, microstructure, nickel

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APA (6th Edition):

Moore, J. (2008). Influence of Germanium Concentration and Homogeneous Boron Doping on Microstructure, Kinetics, and Sheet Resistance of Nickel Germanosilicide Thin Films. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0022417

Chicago Manual of Style (16th Edition):

Moore, John. “Influence of Germanium Concentration and Homogeneous Boron Doping on Microstructure, Kinetics, and Sheet Resistance of Nickel Germanosilicide Thin Films.” 2008. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0022417.

MLA Handbook (7th Edition):

Moore, John. “Influence of Germanium Concentration and Homogeneous Boron Doping on Microstructure, Kinetics, and Sheet Resistance of Nickel Germanosilicide Thin Films.” 2008. Web. 16 Sep 2019.

Vancouver:

Moore J. Influence of Germanium Concentration and Homogeneous Boron Doping on Microstructure, Kinetics, and Sheet Resistance of Nickel Germanosilicide Thin Films. [Internet] [Doctoral dissertation]. University of Florida; 2008. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0022417.

Council of Science Editors:

Moore J. Influence of Germanium Concentration and Homogeneous Boron Doping on Microstructure, Kinetics, and Sheet Resistance of Nickel Germanosilicide Thin Films. [Doctoral Dissertation]. University of Florida; 2008. Available from: http://ufdc.ufl.edu/UFE0022417


University of Florida

21. Phen, Michelle S. Strain Relaxation and Solid Phase Epitaxial Regrowth in Ion Implanted Strained Silicon and Strained Silicon Germanium.

Degree: PhD, Materials Science and Engineering, 2008, University of Florida

 The relaxation process of ion-implanted strained silicon films and strained Si1-xGex alloys was studied to determine the magnitude of critical strain necessary for the breakdown… (more)

Subjects/Keywords: Activation energy; Annealing; Conceptual lattices; Density; Germanium; Ions; Nucleation; Regrowth; Silicon; Stacking faults; amorphization, implantation, si, sige, sper, strain

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Phen, M. S. (2008). Strain Relaxation and Solid Phase Epitaxial Regrowth in Ion Implanted Strained Silicon and Strained Silicon Germanium. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0021930

Chicago Manual of Style (16th Edition):

Phen, Michelle S. “Strain Relaxation and Solid Phase Epitaxial Regrowth in Ion Implanted Strained Silicon and Strained Silicon Germanium.” 2008. Doctoral Dissertation, University of Florida. Accessed September 16, 2019. http://ufdc.ufl.edu/UFE0021930.

MLA Handbook (7th Edition):

Phen, Michelle S. “Strain Relaxation and Solid Phase Epitaxial Regrowth in Ion Implanted Strained Silicon and Strained Silicon Germanium.” 2008. Web. 16 Sep 2019.

Vancouver:

Phen MS. Strain Relaxation and Solid Phase Epitaxial Regrowth in Ion Implanted Strained Silicon and Strained Silicon Germanium. [Internet] [Doctoral dissertation]. University of Florida; 2008. [cited 2019 Sep 16]. Available from: http://ufdc.ufl.edu/UFE0021930.

Council of Science Editors:

Phen MS. Strain Relaxation and Solid Phase Epitaxial Regrowth in Ion Implanted Strained Silicon and Strained Silicon Germanium. [Doctoral Dissertation]. University of Florida; 2008. Available from: http://ufdc.ufl.edu/UFE0021930

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