+publisher:"Texas A&M University" +contributor:("Nguyen, Cam")

Texas A&M University

1. Kim, Kyoungwoon. Microwave and Millimeter-Wave Multi-Band Power Amplifiers, Power Combining Networks, and Transmitter Front-End in Silicon Germanium BiCMOS Technology.

Degree: PhD, Electrical Engineering, 2016, Texas A&M University

URL: http://hdl.handle.net/1969.1/157017

► This dissertation presents new circuit architectures and techniques for designing high performance microwave and millimeter-wave circuits using 0.18-µm SiGe BiCMOS process for advanced wireless communication… (more)

▼ This dissertation presents new circuit architectures and techniques for designing high performance microwave and millimeter-wave circuits using 0.18-µm SiGe BiCMOS process for advanced wireless communication and sensing systems. The high performance single- and multi-band power amplifiers working in microwave and millimeter-wave frequency ranges are proposed. A 10-19, 23-39, and 33-40 GHz concurrent tri-band power amplifier in the respective Ku-, K-, and Ka-band using the distributed amplifier structure is presented first. Instead of utilizing multi-band matching networks, this amplifier is realized based on distributed amplifier structure and two active notch filters employed at each gain cell to form tri-band response. In addition, a power amplifier operating across the entire K-band is proposed. By employing lumped-element Wilkinson power divider and combiner, it produces high output power, high gain, and power added efficiency characteristics over broadband due to its inherent low-pass filtering response. Moreover, a highly integrated V-band power amplifier is presented. This power amplifier consists of four medium unit power cells combined with a four-way parallel power combining network. Secondly, microwave and millimeter-wave power combining and dividing networks are proposed. A wideband power divider and combiner operating up to 67 GHz is developed by adopting capacitive loading slow-wave transmission line to reduce size as well as insertion loss. Also, two-way and 16-way 24/60 GHz dual-band power divider networks in the K/V-band are proposed. The two-way dual-band power divider is realized with a slow-wave transmission line and two shunt connected LC resonators in order to minimize the chip size as well as insertion loss. Furthermore, a 16-way dual-band power dividing and combining network is developed for a dual-band 24/60 GHz 4×4 array system. This network incorporates a two-way dual-band power divider, lumped-element based Wilkinson power dividers, and multi-section transmission line based Wilkinson structures. Finally, a K-/V-band dual-band transmitter front-end is proposed. To realize the transmitter, a diplexer with good diplexing performance and K- and V-band variable gain amplifiers having low phase variation with gain tuning are designed. The transmitter is integrated with two diplexers, K- and V-band variable gain amplifiers, and two power amplifiers resulting in high gain, high output power, and low-phase variation with all gain control stages. Advisors/Committee Members: Nguyen, Cam (advisor), Kish, Laszlo B (committee member), Entesari, Kamran (committee member), Mohanty, Binayak (committee member).

Subjects/Keywords: microwave; millimeter-wave; RFIC; transmitter

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APA (6^th Edition):

Kim, K. (2016). Microwave and Millimeter-Wave Multi-Band Power Amplifiers, Power Combining Networks, and Transmitter Front-End in Silicon Germanium BiCMOS Technology. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/157017

Chicago Manual of Style (16^th Edition):

Kim, Kyoungwoon. “Microwave and Millimeter-Wave Multi-Band Power Amplifiers, Power Combining Networks, and Transmitter Front-End in Silicon Germanium BiCMOS Technology.” 2016. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/157017.

MLA Handbook (7^th Edition):

Kim, Kyoungwoon. “Microwave and Millimeter-Wave Multi-Band Power Amplifiers, Power Combining Networks, and Transmitter Front-End in Silicon Germanium BiCMOS Technology.” 2016. Web. 18 Apr 2021.

Vancouver:

Kim K. Microwave and Millimeter-Wave Multi-Band Power Amplifiers, Power Combining Networks, and Transmitter Front-End in Silicon Germanium BiCMOS Technology. [Internet] [Doctoral dissertation]. Texas A&M University; 2016. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/157017.

Council of Science Editors:

Kim K. Microwave and Millimeter-Wave Multi-Band Power Amplifiers, Power Combining Networks, and Transmitter Front-End in Silicon Germanium BiCMOS Technology. [Doctoral Dissertation]. Texas A&M University; 2016. Available from: http://hdl.handle.net/1969.1/157017

Texas A&M University

2. Bae, Juseok. Millimeter-Wave Concurrent Dual-Band Sige Bicmos Rfic Phased-Array Transmitter and Components.

Degree: PhD, Electrical Engineering, 2017, Texas A&M University

URL: http://hdl.handle.net/1969.1/187268

► A concurrent dual-band phased-array transmitter (TX) and its constituent components are studied in this dissertation. The TX and components are designed for the unlicensed bands,… (more)

▼ A concurrent dual-band phased-array transmitter (TX) and its constituent components are studied in this dissertation. The TX and components are designed for the unlicensed bands, 22–29 and 57–64 GHz, using a 0.18-μm BiCMOS technology. Various studies have been done to design the components, which are suitable for the concurrent dual-band phased-array TX. The designed and developed components in this study are an attenuator, switch, phase shifter, power amplifier and power divider. Attenuators play a key role in tailoring main beam and side-lobe patterns in a phased-array TX. To perform the function in the concurrent dual-band phased-array TX, a 22–29 and 57–64 GHz concurrent dual-band attenuator with low phase variations is designed. Signal detection paths are employed at the output of the phased-array TX to monitor the phase and amplitude deviations/errors, which are larger in the high-frequency design. The detected information enables the TX to have an accurate beam tailoring and steering. A 10–67 GHz wide-band attenuator, covering the dual bands, is designed to manipulate the amplitude of the detected signal. New design techniques for an attenuator with a wide attenuation range and improved flatness are proposed. Also, a topology of dual-function circuit, attenuation and switching, is proposed. The switching turns on and off the detection path to minimize the leakages while the path is not used. Switches are used to minimize the number of components in the phased-array transceiver. With the switches, some of the bi-directional components in the transceiver such as an attenuator, phase shifter, filter, and antenna can be shared by the TX and receiver (RX) parts. In this dissertation, a high-isolation switch with a band-pass filtering response is proposed. The band-pass filtering response suppresses the undesired harmonics and intermodulation products of the TX. Phase shifters are used in phased-array TXs to steer the direction of the beam. A 24-GHz phase shifter with low insertion loss variation is designed using a transistor-body-floating technique for our phased-array TX. The low insertion loss variation minimizes the interference in the amplitude control operation (by attenuator or variable gain amplifier) in phased-array systems. BJTs in a BiCMOS process are characterized across dc to 67 GHz. A novel characterization technique, using on-wafer calibration and EM-based de-embedding both, is proposed and its accuracy at high frequencies is verified. The characterized BJT is used in designing the amplifiers in the phased-array TX. A concurrent dual-band power amplifier (PA) centered at 24 and 60 GHz is proposed and designed for the dual-band phased-array TX. Since the PA is operating in the dual frequency bands simultaneously, significant linearity issues occur. To resolve the problems, a study to find significant intermodulation (IM) products, which increase the third intermodulation (IM3) products most, has been done. Also, an advanced simulation and measurement methodology using three fundamental tones is… Advisors/Committee Members: nguyen, cam (advisor), karsilayan, aydin (committee member), kish, laszlo b (committee member), everett, mark (committee member).

Subjects/Keywords: phased-array transmitter; multi-band circuit/system; concurrent dual-band circuit/system; multi-function circuit; dual-function circuit; BiCMOS; CMOS; RFIC; millimeter-wave; attenuator; phase shifter; power amplifier; bipolar junction transistor; band-pass filter; diplexer; switch; body-floating technique, deep n-type well (DNW); distributed attenuator; pi-attenuator; switching attenuator; T-attenuator; insertion-loss variation; phase variation; third order intermodulation; frequency transformation; filter skirt characteristic; de-embedding; device modeling; on-wafer calibration; silicon germanium BiCMOS

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Bae, J. (2017). Millimeter-Wave Concurrent Dual-Band Sige Bicmos Rfic Phased-Array Transmitter and Components. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/187268

Chicago Manual of Style (16^th Edition):

Bae, Juseok. “Millimeter-Wave Concurrent Dual-Band Sige Bicmos Rfic Phased-Array Transmitter and Components.” 2017. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/187268.

MLA Handbook (7^th Edition):

Bae, Juseok. “Millimeter-Wave Concurrent Dual-Band Sige Bicmos Rfic Phased-Array Transmitter and Components.” 2017. Web. 18 Apr 2021.

Vancouver:

Bae J. Millimeter-Wave Concurrent Dual-Band Sige Bicmos Rfic Phased-Array Transmitter and Components. [Internet] [Doctoral dissertation]. Texas A&M University; 2017. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/187268.

Council of Science Editors:

Bae J. Millimeter-Wave Concurrent Dual-Band Sige Bicmos Rfic Phased-Array Transmitter and Components. [Doctoral Dissertation]. Texas A&M University; 2017. Available from: http://hdl.handle.net/1969.1/187268

Texas A&M University

3. Luo, Yuan. A 0.18-μm BICMOS 20-57 GHz Ultra-Wideband Low-Noise Amplifier Utilizing Frequency-Controlled Positive-Negative Feedback Technique.

Degree: MS, Electrical Engineering, 2015, Texas A&M University

URL: http://hdl.handle.net/1969.1/156426

► Silicon based complementary metallic oxide semiconductor (CMOS) and Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) radio frequency integrated circuits (RFICs), including microwave and millimeter-wave (MMW), are… (more)

▼ Silicon based complementary metallic oxide semiconductor (CMOS) and Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) radio frequency integrated circuits (RFICs), including microwave and millimeter-wave (MMW), are attractive for wireless communication and sensing systems due to their small chip size and facilitation in system-on-chip integration. One of the most important RFICs is the low-noise amplifier (LNA). The design of CMOS/BiCMOS wideband LNAs at MMW frequencies, especially those working across several decades of frequency, is challenging due to various issues. For instance, the device parasitic and inter-coupling between nearby elements in highly condensed chip areas limits the operating bandwidth and performance, and the conductive silicon substrates lead to the inevitable low quality factor of passive elements. In this work, a MMW BiCMOS ultra-wideband LNA across 20 to 57 GHz is presented along with the analysis, design and measurement results. To overcome the upper-band gain degradation and improve the in-band flatness, a novel frequency controlled positive-negative (P-N) feedback topology is adopted to modify the gain response by boosting the gain at the upper-band while suppressing that at the lower-band. To reduce overall power consumption, the first and second stages of the amplifier are stacked between supply voltage and DC ground to utilize the same DC current. At the output of amplifier, a shunt-peaking load stage is utilized to achieve wideband output matching. The designed ultra-wideband MMW LNA is fabricated in JAZZ 0.18-μm BiCMOS technology. It shows a measured power gain of 10.5 ± 0.5 dB, a noise figure between 5.1-7.0 dB, input and output return losses better than -10 and -15 dB, respectively, an input 1 dB compression point higher than -19 dBm, and an input third-order intercept point greater than -8 dBm. It dissipates 16.6 mW from 1.8 V DC supply and has a chip area of 700×400 μm². Advisors/Committee Members: Nguyen, Cam (advisor), Sánchez-Sinencio, Edgar (committee member), Kish, Laszlo (committee member), Mohanty, Binayak (committee member).

Subjects/Keywords: Low Noise Amplifier; Millimeter Wave Frequency; Wideband

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Luo, Y. (2015). A 0.18-μm BICMOS 20-57 GHz Ultra-Wideband Low-Noise Amplifier Utilizing Frequency-Controlled Positive-Negative Feedback Technique. (Masters Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/156426

Chicago Manual of Style (16^th Edition):

Luo, Yuan. “A 0.18-μm BICMOS 20-57 GHz Ultra-Wideband Low-Noise Amplifier Utilizing Frequency-Controlled Positive-Negative Feedback Technique.” 2015. Masters Thesis, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/156426.

MLA Handbook (7^th Edition):

Luo, Yuan. “A 0.18-μm BICMOS 20-57 GHz Ultra-Wideband Low-Noise Amplifier Utilizing Frequency-Controlled Positive-Negative Feedback Technique.” 2015. Web. 18 Apr 2021.

Vancouver:

Luo Y. A 0.18-μm BICMOS 20-57 GHz Ultra-Wideband Low-Noise Amplifier Utilizing Frequency-Controlled Positive-Negative Feedback Technique. [Internet] [Masters thesis]. Texas A&M University; 2015. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/156426.

Council of Science Editors:

Luo Y. A 0.18-μm BICMOS 20-57 GHz Ultra-Wideband Low-Noise Amplifier Utilizing Frequency-Controlled Positive-Negative Feedback Technique. [Masters Thesis]. Texas A&M University; 2015. Available from: http://hdl.handle.net/1969.1/156426

Texas A&M University

4. Meng, Fangyu. High-Isolation Low-Power Active Quasi-Circulator for 44GHz Transceiver with Power and Noise Optimization in 0.18 Micrometer BICMOS.

Degree: MS, Electrical Engineering, 2014, Texas A&M University

URL: http://hdl.handle.net/1969.1/153888

► Circulator is an important directional component in RF, microwave and millimeter wave communication front ends for certain communications, which requires transmitting and receiving signal simultaneously… (more)

▼ Circulator is an important directional component in RF, microwave and millimeter wave communication front ends for certain communications, which requires transmitting and receiving signal simultaneously in the same band without switching of antenna from transmitter to receiver. As modern trend of wireless communication, conventional ferrite circulator is huge, bulky and heavy to be integrated with analog and digital baseband processing circuits. Active circulators provide a compact high isolation solution for low power application with smaller size and less cost with compatibility with modern IC. Previous works are majorly working at low frequency and paid little attention to power and noise requirement of active quasi-circulator working at the front end of a transceiver. A BiCMOS active quasi-circulator at 44GHz is designed in 0.18 μm process to provide high isolation low cost solution, which is comprised of in-phase divider and out-of-phase active combiner, with noise and power optimization. Moreover, techniques employed to improve isolation such as high Common mode rejection ratio(CMRR) balun design, common mode feedback, and novel method of power splitting and noise optimization, impedance matching scheme are discussed. High isolation of cascode structure is analyzed and major tradeoffs among characteristics are investigated, such as: gain and transmission-reception isolation; output impedance, matching and noise; linearity, power and efficiency. The circulator operates around 44 GHz with 3dB bandwidth of 4.53GHz, achieves maximum 2.897dBm input and 2.32dBm output power. Noise Figure (NF) is 10.62dB for reception path, only 0.03dB higher than NFmin. Linearity is reasonable for both in-phase divider and out-of-phase active combiner. OIP3 of in-phase divider is 8.15dBm, IIP3 is 4.48dBm, P1dB,in is -5.97dBm. OIP3 of out-of-phase active combiner is 5.18 dBm, IIP3 is 3.85dBm, P1dB, in is -2.79dBm. All the isolations better than -37 dB are achieved and forward gains better than 4 dB are achieved with power consumption 56.83mW. Large signal TX-RX isolation is 51.837dB. The circuit takes merely 1.415mm*1.014mm area. This active quasi-circulator offers a low cost substitute solution for circulator in low power applications. Advisors/Committee Members: Nguyen, Cam (advisor), Ji, Jim (committee member), Michalski, Krzysztof A (committee member), Mohanty, Binayak (committee member).

Subjects/Keywords: Quasi-circulator; Class AB; LNA

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APA (6^th Edition):

Meng, F. (2014). High-Isolation Low-Power Active Quasi-Circulator for 44GHz Transceiver with Power and Noise Optimization in 0.18 Micrometer BICMOS. (Masters Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/153888

Chicago Manual of Style (16^th Edition):

Meng, Fangyu. “High-Isolation Low-Power Active Quasi-Circulator for 44GHz Transceiver with Power and Noise Optimization in 0.18 Micrometer BICMOS.” 2014. Masters Thesis, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/153888.

MLA Handbook (7^th Edition):

Meng, Fangyu. “High-Isolation Low-Power Active Quasi-Circulator for 44GHz Transceiver with Power and Noise Optimization in 0.18 Micrometer BICMOS.” 2014. Web. 18 Apr 2021.

Vancouver:

Meng F. High-Isolation Low-Power Active Quasi-Circulator for 44GHz Transceiver with Power and Noise Optimization in 0.18 Micrometer BICMOS. [Internet] [Masters thesis]. Texas A&M University; 2014. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/153888.

Council of Science Editors:

Meng F. High-Isolation Low-Power Active Quasi-Circulator for 44GHz Transceiver with Power and Noise Optimization in 0.18 Micrometer BICMOS. [Masters Thesis]. Texas A&M University; 2014. Available from: http://hdl.handle.net/1969.1/153888

Texas A&M University

5. Lee, Sang Hun. A Fully Integrated Multi-Band Multi-Output Synthesizer with Wide-Locking-Range 1/3 Injection Locked Divider Utilizing Self-Injection Technique for Multi-Band Microwave Systems.

Degree: PhD, Electrical Engineering, 2012, Texas A&M University

URL: http://hdl.handle.net/1969.1/ETD-TAMU-2012-08-11477

► This dissertation reports the development of a new multi-band multi-output synthesizer, 1/2 dual-injection locked divider, 1/3 injection-locked divider with phase-tuning, and 1/3 injection-locked divider with… (more)

▼ This dissertation reports the development of a new multi-band multi-output synthesizer, 1/2 dual-injection locked divider, 1/3 injection-locked divider with phase-tuning, and 1/3 injection-locked divider with self-injection using 0.18-micrometer CMOS technology. The synthesizer is used for a multi-band multi-polarization radar system operating in the K- and Ka-band. The synthesizer is a fully integrated concurrent tri-band, tri-output phase-locked loop (PLL) with divide-by-3 injection locked frequency divider (ILFD). A new locking mechanism for the ILFD based on the gain control of the feedback amplifier is utilized to enable tunable and enhanced locking range which facilitates the attainment of stable locking states. The PLL has three concurrent multiband outputs: 3.47-4.313 GHz, 6.94-8.626 GHz and 19.44-21.42-GHz. High second-order harmonic suppression of 62.2 dBc is achieved without using a filter through optimization of the balance between the differential outputs. The proposed technique enables the use of an integer-N architecture for multi-band and microwave systems, while maintaining the benefit of the integer-N architecture; an optimal performance in area and power consumption. The 1/2 dual-ILFD with wide locking range and low-power consumption is analyzed and designed together with a divide-by-2 current mode logic (CML) divider. The 1/2 dual-ILFD enhances the locking range with low-power consumption through optimized load quality factor (QL) and output current amplitude (iOSC) simultaneously. The 1/2 dual-ILFD achieves a locking range of 692 MHz between 7.512 and 8.204 GHz. The new 1/2 dual-ILFD is especially attractive for microwave phase-locked loops and frequency synthesizers requiring low power and wide locking range. The 3.5-GHz divide-by-3 (1/3) ILFD consists of an internal 10.5-GHz Voltage Controlled Oscillator (VCO) functioning as an injection source, 1/3 ILFD core, and output inverter buffer. A phase tuner implemented on an asymmetric inductor is proposed to increase the locking range. The other divide-by-3 ILFD utilizes self-injection technique. The self-injection technique substantially enhances the locking range and phase noise, and reduces the minimum power of the injection signal needed for the 1/3 ILFD. The locking range is increased by 47.8 % and the phase noise is reduced by 14.77 dBc/Hz at 1-MHz offset. Advisors/Committee Members: Nguyen, Cam (advisor), Karsilayan, Aydin (committee member), Kish, Laszlo (committee member), Mohanty, Binayak (committee member).

Subjects/Keywords: Multi-Output PLL; Self-Injection; Multi-Band PLL; 1/3 Injection Locked Divider; ILFD

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Lee, S. H. (2012). A Fully Integrated Multi-Band Multi-Output Synthesizer with Wide-Locking-Range 1/3 Injection Locked Divider Utilizing Self-Injection Technique for Multi-Band Microwave Systems. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-2012-08-11477

Chicago Manual of Style (16^th Edition):

Lee, Sang Hun. “A Fully Integrated Multi-Band Multi-Output Synthesizer with Wide-Locking-Range 1/3 Injection Locked Divider Utilizing Self-Injection Technique for Multi-Band Microwave Systems.” 2012. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/ETD-TAMU-2012-08-11477.

MLA Handbook (7^th Edition):

Lee, Sang Hun. “A Fully Integrated Multi-Band Multi-Output Synthesizer with Wide-Locking-Range 1/3 Injection Locked Divider Utilizing Self-Injection Technique for Multi-Band Microwave Systems.” 2012. Web. 18 Apr 2021.

Vancouver:

Lee SH. A Fully Integrated Multi-Band Multi-Output Synthesizer with Wide-Locking-Range 1/3 Injection Locked Divider Utilizing Self-Injection Technique for Multi-Band Microwave Systems. [Internet] [Doctoral dissertation]. Texas A&M University; 2012. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2012-08-11477.

Council of Science Editors:

Lee SH. A Fully Integrated Multi-Band Multi-Output Synthesizer with Wide-Locking-Range 1/3 Injection Locked Divider Utilizing Self-Injection Technique for Multi-Band Microwave Systems. [Doctoral Dissertation]. Texas A&M University; 2012. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2012-08-11477

Texas A&M University

6. Lee, Jaeyoung. Microwave and Millimeter-wave Concurrent Multiband Low-Noise Amplifiers and Receiver Front-end in SiGe BiCMOS Technology.

Degree: PhD, Electrical Engineering, 2015, Texas A&M University

URL: http://hdl.handle.net/1969.1/187446

► A fully integrated SiGe BiCMOS concurrent multiband receiver front-end and its building blocks including multiband low-noise amplifiers (LNAs), single-to-differential amplifiers and mixer are presented for… (more)

▼ A fully integrated SiGe BiCMOS concurrent multiband receiver front-end and its building blocks including multiband low-noise amplifiers (LNAs), single-to-differential amplifiers and mixer are presented for various Ku-/K-/Ka-band applications. The proposed concurrent multiband receiver building blocks and receiver front-end achieve the best stopband rejection performances as compared to the existing multiband LNAs and receivers. First, a novel feedback tri-band load composed of two inductor feedback notch filters is proposed to overcome the low Q-factor of integrated passive inductors, and hence it provides superior stopband rejection ratio (SRR). A new 13.5/24/35-GHz concurrent tri-band LNA implementing the feedback tri-band load is presented. The developed tri-band LNA is the first concurrent tri-band LNA operating up to millimeter-wave region. By expanding the operating principle of the feedback tri-band load, a 21.5/36.5-GHz concurrent dual-band LNA with an inductor feedback dual-band load and another 23/36-GHz concurrent dual-band LNA with a new transformer feedback dual-band load are also presented. The latter provides more degrees of freedom for the creation of the stopband and passbands as compared to the former. A 22/36-GHz concurrent dual-band single-to-differential LNA employing a novel single-to-differential transformer feedback dual-band load is presented. The developed LNA is the first true concurrent dual-band single-to-differential amplifier. A novel 24.5/36.5 GHz concurrent dual-band merged single-to-differential LNA and mixer implementing the proposed single-to-differential transformer feedback dual-band load is also presented. With a 21-GHz LO signal, the down-converted dual IF bands are located at 3.5/15.5 GHz for two passband signals at 24.5/36.5 GHz, respectively. The proposed merged LNA and mixer is the first fully integrated concurrent dual-band mixer operating up to millimeter-wave frequencies without using any switching mechanism. Finally, a 24.5/36.5-GHz concurrent dual-band receiver front-end is proposed. It consists of the developed concurrent dual-band LNA using the single-to-single transformer feedback dual-band load and the developed concurrent dual-band merged LNA and mixer employing the single-to-differential transformer feedback dual-band load. The developed concurrent dual-band receiver front-end achieves the highest gain and the best NF performances with the largest SRRs, while operating at highest frequencies up to millimeter-wave region, among the concurrent dual-band receivers reported to date. Advisors/Committee Members: Nguyen, Cam (advisor), Silva-Martinex, Jose (committee member), Su, Chin B. (committee member), Zoghi, Ben (committee member).

Subjects/Keywords: Balun; BiCMOS; CMOS; concurrent multiband; dual-band; feedback notch; low-noise amplifier (LNA); mixer; multiband; multiband resonator; RF integrated circuit (RFIC); single-to-differential; tri-band

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Lee, J. (2015). Microwave and Millimeter-wave Concurrent Multiband Low-Noise Amplifiers and Receiver Front-end in SiGe BiCMOS Technology. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/187446

Chicago Manual of Style (16^th Edition):

Lee, Jaeyoung. “Microwave and Millimeter-wave Concurrent Multiband Low-Noise Amplifiers and Receiver Front-end in SiGe BiCMOS Technology.” 2015. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/187446.

MLA Handbook (7^th Edition):

Lee, Jaeyoung. “Microwave and Millimeter-wave Concurrent Multiband Low-Noise Amplifiers and Receiver Front-end in SiGe BiCMOS Technology.” 2015. Web. 18 Apr 2021.

Vancouver:

Lee J. Microwave and Millimeter-wave Concurrent Multiband Low-Noise Amplifiers and Receiver Front-end in SiGe BiCMOS Technology. [Internet] [Doctoral dissertation]. Texas A&M University; 2015. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/187446.

Council of Science Editors:

Lee J. Microwave and Millimeter-wave Concurrent Multiband Low-Noise Amplifiers and Receiver Front-end in SiGe BiCMOS Technology. [Doctoral Dissertation]. Texas A&M University; 2015. Available from: http://hdl.handle.net/1969.1/187446

Texas A&M University

7. Geha, Chadi Daher. A Millimeter-Wave Coexistent RFIC Receiver Architecture in 0.18-µm SiGe BiCMOS for Radar and Communication Systems.

Degree: PhD, Electrical Engineering, 2015, Texas A&M University

URL: http://hdl.handle.net/1969.1/187454

► Innovative circuit architectures and techniques to enhance the performance of several key BiCMOS RFIC building blocks applied in radar and wireless communication systems operating at… (more)

▼ Innovative circuit architectures and techniques to enhance the performance of several key BiCMOS RFIC building blocks applied in radar and wireless communication systems operating at the millimeter-wave frequencies are addressed in this dissertation. The former encapsulates the development of an advanced, low-cost and miniature millimeter-wave coexistent current mode direct conversion receiver for short-range, high-resolution radar and high data rate communication systems. A new class of broadband low power consumption active balun-LNA consisting of two common emitters amplifiers mutually coupled thru an AC stacked transformer for power saving and gain boosting. The active balun-LNA exhibits new high linearity technique using a constant gm cell transconductance independent of input-outputs variations based on equal emitters’ area ratios. A novel multi-stages active balun-LNA with innovative technique to mitigate amplitude and phase imbalances is proposed. The new multi-stages balun-LNA technique consists of distributed feed-forward averaging recycles correction for amplitude and phase errors and is insensitive to unequal paths parasitic from input to outputs. The distributed averaging recycles correction technique resolves the amplitude and phase errors residuals in a multi-iterative process. The new multi-stages balun-LNA averaging correction technique is frequency independent and can perform amplitude and phase calibrations without relying on passive lumped elements for compensation. The multi-stage balun-LNA exhibits excellent performance from 10 to 50 GHz with amplitude and phase mismatches less than 0.7 dB and 2.86º, respectively. Furthermore, the new multi-stages balun-LNA operates in current mode and shows high linearity with low power consumption. The unique balun-LNA design can operates well into mm-wave regions and is an integral block of the mm-wave radar and communication systems. The integration of several RFIC blocks constitutes the broadband millimeter-wave coexistent current mode direct conversion receiver architecture operating from 22- 44 GHz. The system and architectural level analysis provide a unique understanding into the receiver characteristics and design trade-offs. The RF front-end is based on the broadband multi-stages active balun-LNA coupled into a fully balanced passive mixer with an all-pass in-phase/quadrature phase generator. The trans-impedance amplifier converts the input signal current into a voltage gain at the outputs. Simultaneously, the high power input signal current is channelized into an anti-aliasing filter with 20 dB rejection for out of band interferers. In addition, the dissertation demonstrates a wide dynamic range system with small die area, cost effective and very low power consumption. Advisors/Committee Members: Nguyen, Cam (advisor), Silva-Martinez, Jose (committee member), Kish, Lazslo B (committee member), Everett, Mark (committee member).

Subjects/Keywords: mm-Wave; Receiver; Balun-LNA; Coexistent; BiCMOS; SiGe; TIA

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APA (6^th Edition):

Geha, C. D. (2015). A Millimeter-Wave Coexistent RFIC Receiver Architecture in 0.18-µm SiGe BiCMOS for Radar and Communication Systems. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/187454

Chicago Manual of Style (16^th Edition):

Geha, Chadi Daher. “A Millimeter-Wave Coexistent RFIC Receiver Architecture in 0.18-µm SiGe BiCMOS for Radar and Communication Systems.” 2015. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/187454.

MLA Handbook (7^th Edition):

Geha, Chadi Daher. “A Millimeter-Wave Coexistent RFIC Receiver Architecture in 0.18-µm SiGe BiCMOS for Radar and Communication Systems.” 2015. Web. 18 Apr 2021.

Vancouver:

Geha CD. A Millimeter-Wave Coexistent RFIC Receiver Architecture in 0.18-µm SiGe BiCMOS for Radar and Communication Systems. [Internet] [Doctoral dissertation]. Texas A&M University; 2015. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/187454.

Council of Science Editors:

Geha CD. A Millimeter-Wave Coexistent RFIC Receiver Architecture in 0.18-µm SiGe BiCMOS for Radar and Communication Systems. [Doctoral Dissertation]. Texas A&M University; 2015. Available from: http://hdl.handle.net/1969.1/187454

Texas A&M University

8. Lee, Donghyun. Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End.

Degree: PhD, Electrical Engineering, 2015, Texas A&M University

URL: http://hdl.handle.net/1969.1/156455

► The recent advancement in silicon-based technologies has offered the opportunity for the development of highly-integrated circuits and systems in the millimeter-wave frequency regime. In particular,… (more)

▼ The recent advancement in silicon-based technologies has offered the opportunity for the development of highly-integrated circuits and systems in the millimeter-wave frequency regime. In particular, the demand for high performance multi-band multi-mode radar and communication systems built on silicon-based technologies has been increased dramatically for both military and commercial applications. This dissertation presents the design and implementation of advanced millimeter-wave front-end circuits in SiGe BiCMOS process including a transmit/receive switch module with integrated calibration function, low noise amplifier, and power amplifier for millimeter-wave concurrent dual-band dual-polarization radars and communication systems. The proposed circuits designed for the concurrent dual-band dual-polarization radars and communication systems were fabricated using 0.18-μm BiCMOS process resulting in novel circuit architectures for concurrent multi-band operation. The developed concurrent dual-band circuits fabricated on 0.18-μm BiCMOS process include the T/R/Calibration switch module for digital beam forming array system at 24.5/35 GHz, concurrent dual-band low noise amplifiers at 44/60 GHz, and concurrent dual-band power amplifier at 44/60 GHz. With having all the design frequencies closely spaced to each other showing the frequency ratio below 1.43, the designed circuits provided the integrated dual-band filtering function with Q-enhanced frequency responses. Inspired by the composite right/left- handed metamaterial transmission line approaches, the integrated Q-enhanced filtering sub-circuits provided unprecedented dual-band filtering capability. The new concurrent dual-band dual-mode circuits and system architecture can provide enhanced radar and communication system performance with extended coverage, better image synthesis and target locating by the enhanced diversity. The circuit level hardware research conducted in this dissertation is expected to contribute to enhance the performance of multi-band multi-mode imaging, sensing, and communication array systems. Advisors/Committee Members: Nguyen, Cam (advisor), Su, Chin B. (committee member), Huff, Gregory H. (committee member), Langari, Reza (committee member).

Subjects/Keywords: array calibration; CMOS and BiCMOS switch; CMOS RFIC; composite right/left- handed transmission line; millimeter-wave IC; phased array transceiver

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Lee, D. (2015). Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/156455

Chicago Manual of Style (16^th Edition):

Lee, Donghyun. “Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End.” 2015. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/156455.

MLA Handbook (7^th Edition):

Lee, Donghyun. “Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End.” 2015. Web. 18 Apr 2021.

Vancouver:

Lee D. Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End. [Internet] [Doctoral dissertation]. Texas A&M University; 2015. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/156455.

Council of Science Editors:

Lee D. Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End. [Doctoral Dissertation]. Texas A&M University; 2015. Available from: http://hdl.handle.net/1969.1/156455

Texas A&M University

9. Huynh, Cuong Phu Minh 1976-. Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Transmitter for Radar and Communication Systems.

Degree: PhD, Electrical Engineering, 2012, Texas A&M University

URL: http://hdl.handle.net/1969.1/148206

► This dissertation presents new circuit architectures and techniques for improving the performance of several key BiCMOS RFIC building blocks used in radar and wireless communication… (more)

▼ This dissertation presents new circuit architectures and techniques for improving the performance of several key BiCMOS RFIC building blocks used in radar and wireless communication systems operating up to millimeter-wave frequencies, and the development of an advanced, low-cost and miniature millimeter-wave concurrent dual-band transmitter for short-range, high-resolution radar and high-rate communication systems. A new type of low-power active balun consisting of a common emitter amplifier with degenerative inductor and a common collector amplifier is proposed. The parasitic neutralization and compensation techniques are used to keep the balun well balanced at very high frequencies and across an ultra-wide bandwidth. A novel RF switch architecture with ultra-high isolation and possible gain is proposed, analyzed and demonstrated. The new RF switch architecture achieves an ultra-high isolation through implementation of a new RF leaking cancellation technique. A new class of concurrent dual-band impedance matching networks and technique for synthesizing them are presented together with a 25.5/37-GHz concurrent dual-band PA. These matching networks enable simultaneous matching of two arbitrary loads to two arbitrary sources at two different frequencies, utilizing the impedance-equivalence properties of LC networks that any LC network can be equivalent to an inductor, capacitor, open or short at different frequencies. K- and Ka-band ultra-low-leakage RF-pulse formers capable of producing very narrow RF pulses in the order of 200 ps with small rising and falling time for short-range high-resolution radar and high-data-rate communication systems are also developed. The complete transmitter exhibiting unique characteristics obtained from capabilities of producing very narrow and tunable RF pulses with extremely RF leakage and working concurrently in dual bands at 24.5 and 35 GHz was designed. Capability of generating narrow and tunable RF pulses allows the radar system to flexibly work at high and multiple range resolutions. The extremely low RF leakage allows the transmitter to share one antenna system with receiver, turn on the PA at all time, comply the transmitting spectrum requirements, increase the system dynamic range, avoid harming to other systems; hence improving system size, cost and performance. High data-rate in communication systems is achieved as the consequence of transmitting very narrow RF pulses at high rates. In addition, the dissertation demonstrates a design approach for low chip-area, cost and power consumption systems in which a single dual-band component (power amplifier) is designed to operate with two RF signals simultaneously. Advisors/Committee Members: Nguyen, Cam (advisor), Nevels, Robert D (committee member), Su, Chin B (committee member), Zoghi, Behbood B (committee member).

Subjects/Keywords: Dual-Band; Transmitter; Millimeter-wave; RFIC

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Huynh, C. P. M. 1. (2012). Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Transmitter for Radar and Communication Systems. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/148206

Chicago Manual of Style (16^th Edition):

Huynh, Cuong Phu Minh 1976-. “Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Transmitter for Radar and Communication Systems.” 2012. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/148206.

MLA Handbook (7^th Edition):

Huynh, Cuong Phu Minh 1976-. “Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Transmitter for Radar and Communication Systems.” 2012. Web. 18 Apr 2021.

Vancouver:

Huynh CPM1. Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Transmitter for Radar and Communication Systems. [Internet] [Doctoral dissertation]. Texas A&M University; 2012. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/148206.

Council of Science Editors:

Huynh CPM1. Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Transmitter for Radar and Communication Systems. [Doctoral Dissertation]. Texas A&M University; 2012. Available from: http://hdl.handle.net/1969.1/148206

Texas A&M University

10. Lee, Donghyun. Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End.

Degree: PhD, Electrical Engineering, 2015, Texas A&M University

URL: http://hdl.handle.net/1969.1/156197

► The recent advancement in silicon-based technologies has offered the opportunity for the development of highly-integrated circuits and systems in the millimeter-wave frequency regime. In particular,… (more)

▼ The recent advancement in silicon-based technologies has offered the opportunity for the development of highly-integrated circuits and systems in the millimeter-wave frequency regime. In particular, the demand for high performance multi-band multi-mode radar and communication systems built on silicon-based technologies has been increased dramatically for both military and commercial applications. This dissertation presents the design and implementation of advanced millimeter-wave front-end circuits in SiGe BiCMOS process including a transmit/receive switch module with integrated calibration function, low noise amplifier, and power amplifier for millimeter-wave concurrent dual-band dual-polarization radars and communication systems. The proposed circuits designed for the concurrent dual-band dual-polarization radars and communication systems were fabricated using 0.18-μm BiCMOS process resulting in novel circuit architectures for concurrent multi-band operation. The developed concurrent dual-band circuits fabricated on 0.18-μm BiCMOS process include the T/R/Calibration switch module for digital beam forming array system at 24.5/35 GHz, concurrent dual-band low noise amplifiers at 44/60 GHz, and concurrent dual-band power amplifier at 44/60 GHz. With having all the design frequencies closely spaced to each other showing the frequency ratio below 1.43, the designed circuits provided the integrated dual-band filtering function with Q-enhanced frequency responses. Inspired by the composite right/left- handed metamaterial transmission line approaches, the integrated Q-enhanced filtering sub-circuits provided unprecedented dual-band filtering capability. The new concurrent dual-band dual-mode circuits and system architecture can provide enhanced radar and communication system performance with extended coverage, better image synthesis and target locating by the enhanced diversity. The circuit level hardware research conducted in this dissertation is expected to contribute to enhance the performance of multi-band multi-mode imaging, sensing, and communication array systems. Advisors/Committee Members: Nguyen, Cam (advisor), Su, Chin B. (committee member), Huff, Gregory H. (committee member), Langari, Reza (committee member).

Subjects/Keywords: array calibration; CMOS and BiCMOS switch; CMOS RFIC; composite right/left- handed transmission line; millimeter-wave IC; phased array transceiver

Record Details Similar Records Cite « Share

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Lee, D. (2015). Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/156197

Chicago Manual of Style (16^th Edition):

Lee, Donghyun. “Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End.” 2015. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/156197.

MLA Handbook (7^th Edition):

Lee, Donghyun. “Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End.” 2015. Web. 18 Apr 2021.

Vancouver:

Lee D. Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End. [Internet] [Doctoral dissertation]. Texas A&M University; 2015. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/156197.

Council of Science Editors:

Lee D. Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End. [Doctoral Dissertation]. Texas A&M University; 2015. Available from: http://hdl.handle.net/1969.1/156197

Texas A&M University

11. Jang, Sun Hwan. Efficient High-Performance Millimeter-Wave Front-End Integrated Circuit Designs and Techniques in SiGe BiCMOS.

Degree: PhD, Electrical Engineering, 2016, Texas A&M University

URL: http://hdl.handle.net/1969.1/158120

► This dissertation presents various “efficient” design techniques for mm-wave front-end integrated circuits in regards to dc power, bandwidth, and chip size. The ideas, while suitable… (more)

▼ This dissertation presents various “efficient” design techniques for mm-wave front-end integrated circuits in regards to dc power, bandwidth, and chip size. The ideas, while suitable for different CMOS/BiCMOS processes, were implemented using a 0.18-μm SiGe BiCMOS process. The proposed techniques are validated through the actual implementations of several building blocks constituting two different front-end sections: a V-band OOK/pulse transceiver front-end and a concurrent K-/V-band receiver front-end, where K-band ranges from 18 to 27 GHz and V-band from 40 to 75 GHz. As one of the constituent components in the V-band pulse transmitter, a 60-GHz active OOK/pulse modulator has been designed with an emphasis on the enhancement in the ON/OFF isolation. Having a decent gain (higher than 10 dB), the designed modulator can also be used as a driver stage, which can save the chip area and possibly the dc power consumption compared to the combination of a switch-based passive modulator and a drive amplifier. For the receiver front-end, a wideband V-band low-noise amplifier (LNA) has been designed. Employing a wideband gain shaping technique through two T-type inter-stage matching networks, the designed LNA features very high gain-bandwidth product compared to the conventional gain-staggered wideband amplifier designs for a given dc power consumption. For the concurrent K-/V-band receiver front-end, a low-noise and variable gain stages have been designed. As the first component of the receiver chain, a concurrent dual-band LNA has been designed within a similar footprint required for a single-band amplifier operating either at K- or V-band. The most significant direct intermodulation (IM) product and harmonics are suppressed by a simple rejection network between the input and cascode devices of the 1st stage. This network also plays a crucial role in achieving dual-band input matching through Miller effect. For amplitude control purposes in the RF stage, a variable gain amplifier (VGA) operating concurrently at K- and V-bands has been developed starting from a wideband amplifier design. By replacing the inductors in the wideband design with the transformer-coupled resonators (TCRs), the critical direct IM products can be suppressed without increasing the active chip area. Gain tuning is achieved by conventional current steering, but a new technique is applied to reduce phase variation in the course of gain tuning process, which is one of the most critical concerns, especially in phased array systems. Advisors/Committee Members: Nguyen, Cam V (advisor), Kish, Laszlo B (committee member), Entesari, Kamran (committee member), Everett, Mark E (committee member).

Subjects/Keywords: Millimeter-wave; RFIC; Integrated Circuit; CMOS; BiCMOS

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Jang, S. H. (2016). Efficient High-Performance Millimeter-Wave Front-End Integrated Circuit Designs and Techniques in SiGe BiCMOS. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/158120

Chicago Manual of Style (16^th Edition):

Jang, Sun Hwan. “Efficient High-Performance Millimeter-Wave Front-End Integrated Circuit Designs and Techniques in SiGe BiCMOS.” 2016. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/158120.

MLA Handbook (7^th Edition):

Jang, Sun Hwan. “Efficient High-Performance Millimeter-Wave Front-End Integrated Circuit Designs and Techniques in SiGe BiCMOS.” 2016. Web. 18 Apr 2021.

Vancouver:

Jang SH. Efficient High-Performance Millimeter-Wave Front-End Integrated Circuit Designs and Techniques in SiGe BiCMOS. [Internet] [Doctoral dissertation]. Texas A&M University; 2016. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/158120.

Council of Science Editors:

Jang SH. Efficient High-Performance Millimeter-Wave Front-End Integrated Circuit Designs and Techniques in SiGe BiCMOS. [Doctoral Dissertation]. Texas A&M University; 2016. Available from: http://hdl.handle.net/1969.1/158120

12. Um, Youngman. Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Front-End Module for Communication and Sensing Systems.

Degree: PhD, Electrical Engineering, 2017, Texas A&M University

URL: http://hdl.handle.net/1969.1/161500

► This dissertation presents new circuit architectures and techniques for improving several key performances of BiCMOS RFIC building blocks that are used in wireless communication and… (more)

▼ This dissertation presents new circuit architectures and techniques for improving several key performances of BiCMOS RFIC building blocks that are used in wireless communication and sensing systems operating at millimeter-wave frequencies. The developed circuits and front-end module can be employed in concurrent dual-band transceivers for communication and sensing systems such as phased array and RFID systems. New 0.18-μm CMOS dual-bandpass filtering single-pole double-throw (SPDT) and transmit/receive (T/R) switches have been developed, and they operate in two different frequency bands centered at around 40 and 60 GHz (Design 1) and 24 and 60 GHz (Designs 2, 3 and 4). Design 1 is a concurrent dual-bandpass filtering T/R switch consisting of three SPDT switches based on a 3rd order band-pass filter with shunt nMOS transistors as the switching function. Design 2 is a 24/60-GHz concurrent dual-bandpass T/R switch consisting of dual-band λ/4 LC networks and resonators with shunt nMOS transistors as the switching function. Design 3 is a dual-band SPDT and T/R switches, which are capable of band-pass filtering as well as separate and concurrent switching operations in single/dual-band and transmission/reception. These components can act as diplexers with switching functions. Design 4 is a wideband concurrent dual-band SPDT switch with integrated dual-bandpass filtering, which is configured to make it approximately equivalent to a dual-band resonator in the on-state operation. A fully integrated 24/60-GHz concurrent dual-band LNA utilizing a dual-band LC circuit has been proposed. The LNA is based on a two-stage cascode topology with inductive degeneration. The dual-band LC circuit has the quarter-wavelength characteristic at two different frequencies, and it shows the dual pass-band and single stop-band characteristics when it is connected to the ground in shunt. Due to the cancellation of the stop-band signal and low-pass response by the LC circuit connected to the cascode nodes of the 1st and 2nd stages in the LNA, the LNA presents high stop-band rejection and good gain balance at 24 and 60 GHz. A concurrent dual-band front-end module (FEM) consisting of a 24/60-GHz dual-band antenna, a five-port T/R switch, two LNAs and one PA has been proposed. The FEM can be employed in systems with dual-polarization, for instance, phased array and RFID reader systems. Advisors/Committee Members: Nguyen, Cam (advisor), Nevels, Robert (committee member), Su, Chin (committee member), Mohanty, Binayak (committee member).

Subjects/Keywords: Millimeter-wave; RFIC; Switch; LNA; Front-end Module; CMOS; BiCMOS

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APA (6^th Edition):

Um, Y. (2017). Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Front-End Module for Communication and Sensing Systems. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/161500

Chicago Manual of Style (16^th Edition):

Um, Youngman. “Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Front-End Module for Communication and Sensing Systems.” 2017. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/161500.

MLA Handbook (7^th Edition):

Um, Youngman. “Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Front-End Module for Communication and Sensing Systems.” 2017. Web. 18 Apr 2021.

Vancouver:

Um Y. Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Front-End Module for Communication and Sensing Systems. [Internet] [Doctoral dissertation]. Texas A&M University; 2017. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/161500.

Council of Science Editors:

Um Y. Millimeter-Wave Concurrent Dual-Band BiCMOS RFIC Front-End Module for Communication and Sensing Systems. [Doctoral Dissertation]. Texas A&M University; 2017. Available from: http://hdl.handle.net/1969.1/161500

13. Yu, Ji Hyoung. Harmonic Suppressed Reconfigurable Dual-band, Multi-mode Ultra-wideband, and Compact High Selective Microstrip Bandpass Filters.

Degree: PhD, Electrical Engineering, 2017, Texas A&M University

URL: http://hdl.handle.net/1969.1/173280

► As an indispensable component, microwave bandpass filters play a very important role in many modern wireless systems. They are used to carry out the selection… (more)

▼ As an indispensable component, microwave bandpass filters play a very important role in many modern wireless systems. They are used to carry out the selection of only the wanted frequencies from RF signals with various spurious frequencies. The reconfigurable filter with multi-band has attracted much attention for both research and industry because of the increasing importance in making RF components that have multi-function with compact size. Wide or Ultra-wideband (UWB) bandpass filters are becoming more and more in demand in many wireless applications due to the high data transmission rate. This dissertation focuses on the study of microwave filters with many applications in various wireless systems. Firstly, bandpass filters using stepped impedance stubs are presented. The resonant frequencies and transmission zeros are analyzed, and harmonic suppression by novel S-shaped coupled feed lines is presented. A resonator with a dual-band characteristic is introduced, and it is analytically shown that each passband can be independently controlled by the parameters of the resonator. PIN diodes are used to introduce an electrically controlled dual-band bandpass filter. Secondly, symmetric stepped impedance resonators with asymmetric stepped impedance stubs are also presented to develop Ultra-wide band (UWB) bandpass filters with and without a notched band. The resonant frequencies and transmission zeros of the resonator are effectively located to achieve a very wide passband and a high attenuation rate in rejection bands. The interdigital coupled feed lines with rectangular slots are designed for a better passband characteristic. A notched characteristic is introduced by using modified feed lines to avoid the interferences with other existing signals. UWB bandpass filter performances in time-domain and frequency-domain are analyzed and discussed. Thirdly, UWB bandpass filters with a different configuration are developed. Similarly, the analyzed resonant frequencies are used to achieve a passband for UWB applications. A different technique is used to introduce a very narrow notched band within the passband. Time-domain analysis is made to verify the frequency-domain performance. Lastly, a very high selective wideband bandpass filter is presented using an inverted T-shaped resonator. The characteristic of the resonator is analyzed to design a bandpass filter with specified bandwidth. The short stubs are introduced to achieve a very high attenuation rate at both sides of the passband and a wide stopband characteristic. In summary, various microwave filters to meet the requirements of specific applications are studied and designed. Analysis and design methodology of the proposed microwave filters in this dissertation can be applied in many applications in wireless systems. Advisors/Committee Members: Chang, Kai (advisor), Nguyen, Cam (committee member), Kish, Laszlo B. (committee member), Jeong, Hae-Kwon (committee member).

Subjects/Keywords: Harmonic suppression; Dual-band bandpass filter; Reconfigurable bandpass filter; Ultra-wideband (UWB) bandpass filter; Notched band; Time-domain analysis; High selectivity; Stepped impedance resonator; Resonant frequency; Transmission zero

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APA (6^th Edition):

Yu, J. H. (2017). Harmonic Suppressed Reconfigurable Dual-band, Multi-mode Ultra-wideband, and Compact High Selective Microstrip Bandpass Filters. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/173280

Chicago Manual of Style (16^th Edition):

Yu, Ji Hyoung. “Harmonic Suppressed Reconfigurable Dual-band, Multi-mode Ultra-wideband, and Compact High Selective Microstrip Bandpass Filters.” 2017. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/173280.

MLA Handbook (7^th Edition):

Yu, Ji Hyoung. “Harmonic Suppressed Reconfigurable Dual-band, Multi-mode Ultra-wideband, and Compact High Selective Microstrip Bandpass Filters.” 2017. Web. 18 Apr 2021.

Vancouver:

Yu JH. Harmonic Suppressed Reconfigurable Dual-band, Multi-mode Ultra-wideband, and Compact High Selective Microstrip Bandpass Filters. [Internet] [Doctoral dissertation]. Texas A&M University; 2017. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/173280.

Council of Science Editors:

Yu JH. Harmonic Suppressed Reconfigurable Dual-band, Multi-mode Ultra-wideband, and Compact High Selective Microstrip Bandpass Filters. [Doctoral Dissertation]. Texas A&M University; 2017. Available from: http://hdl.handle.net/1969.1/173280

Texas A&M University

14. Chirala, Mohan Krishna. Passive and active circuits in cmos technology for rf, microwave and millimeter wave applications.

Degree: PhD, Electrical Engineering, 2009, Texas A&M University

URL: http://hdl.handle.net/1969.1/ETD-TAMU-2069

► The permeation of CMOS technology to radio frequencies and beyond has fuelled an urgent need for a diverse array of passive and active circuits that… (more)

▼ The permeation of CMOS technology to radio frequencies and beyond has fuelled an urgent need for a diverse array of passive and active circuits that address the challenges of rapidly emerging wireless applications. While traditional analog based design approaches satisfy some applications, the stringent requirements of newly emerging applications cannot necessarily be addressed by existing design ideas and compel designers to pursue alternatives. One such alternative, an amalgamation of microwave and analog design techniques, is pursued in this work. A number of passive and active circuits have been designed using a combination of microwave and analog design techniques. For passives, the most crucial challenge to their CMOS implementation is identified as their large dimensions that are not compatible with CMOS technology. To address this issue, several design techniques – including multi-layered design and slow wave structures – are proposed and demonstrated through experimental results after being suitably tailored for CMOS technology. A number of novel passive structures - including a compact 10 GHz hairpin resonator, a broadband, low loss 25-35 GHz Lange coupler, a 25-35 GHz thin film microstrip (TFMS) ring hybrid, an array of 0.8 nH and 0.4 nH multi-layered high self resonant frequency (SRF) inductors are proposed, designed and experimentally verified. A number of active circuits are also designed and notable experimental results are presented. These include 3-10 GHz and DC-20 GHz distributed low noise amplifiers (LNA), a dual wideband Low noise amplifier and 15 GHz distributed voltage controlled oscillators (DVCO). Distributed amplifiers are identified as particularly effective in the development of wideband receiver front end sub-systems due to their gain flatness, excellent matching and high linearity. The most important challenge to the implementation of distributed amplifiers in CMOS RFICs is identified as the issue of their miniaturization. This problem is solved by using integrated multi-layered inductors instead of transmission lines to achieve over 90% size compression compared to earlier CMOS implementations. Finally, a dual wideband receiver front end sub-system is designed employing the miniaturized distributed amplifier with resonant loads and integrated with a double balanced Gilbert cell mixer to perform dual band operation. The receiver front end measured results show 15 dB conversion gain, and a 1-dB compression point of -4.1 dBm in the centre of band 1 (from 3.1 to 5.0 GHz) and -5.2 dBm in the centre of band 2 (from 5.8 to 8 GHz) with input return loss less than 10 dB throughout the two bands of operation. Advisors/Committee Members: NGUYEN, CAM (advisor), CHURCH, DAVID (committee member), SINENCIO, EDGAR SANCHEZ (committee member), SU, CHIN (committee member).

Subjects/Keywords: RFIC; CMOS; COUPLER; RESONATOR; INDUCTOR; LNA; VCO; FRONTEND; UWB

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Chirala, M. K. (2009). Passive and active circuits in cmos technology for rf, microwave and millimeter wave applications. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-2069

Chicago Manual of Style (16^th Edition):

Chirala, Mohan Krishna. “Passive and active circuits in cmos technology for rf, microwave and millimeter wave applications.” 2009. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/ETD-TAMU-2069.

MLA Handbook (7^th Edition):

Chirala, Mohan Krishna. “Passive and active circuits in cmos technology for rf, microwave and millimeter wave applications.” 2009. Web. 18 Apr 2021.

Vancouver:

Chirala MK. Passive and active circuits in cmos technology for rf, microwave and millimeter wave applications. [Internet] [Doctoral dissertation]. Texas A&M University; 2009. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2069.

Council of Science Editors:

Chirala MK. Passive and active circuits in cmos technology for rf, microwave and millimeter wave applications. [Doctoral Dissertation]. Texas A&M University; 2009. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2069

Texas A&M University

15. Guan, Xin. Development of RF CMOS receiver front-ends for ultrawideband.

Degree: PhD, Electrical Engineering, 2009, Texas A&M University

URL: http://hdl.handle.net/1969.1/ETD-TAMU-2719

► Ultra-Wideband (UWB) technology has become one of the hottest topics in wireless communications, for it provides cost-effective, power-efficient, high bandwidth solution for relaying data in… (more)

▼ Ultra-Wideband (UWB) technology has become one of the hottest topics in wireless communications, for it provides cost-effective, power-efficient, high bandwidth solution for relaying data in the immediate area (up to 10 meters). This work demonstrates two different solutions for the RF front-end designs in the UWB receivers, one is distributed topology, and the other is based on traditional lumped element topology. The distributed amplifier is one of the attractive candidates for UWB Low Noise Amplifier (LNA). The design, analysis and operation of the distributed amplifiers will be presented. A distributed amplifier is designed with Coplanar Waveguide (CPW) transmission lines in 0.25-μm CMOS process for time domain UWB applications. New design techniques and new topologies are developed to enhance the power-efficiency and reduce the chip area. A compact and high performance distributed amplifier with Patterned Grounded Shield (PGS) inductors is developed in 0.25-μm CMOS process. The amplifier has a measurement result of 7.2dB gain, 4.2-6dB noise figure, and less than -10dB return loss through 0-11GHz. A new distributed amplifier implementing cascade common source gain cells is presented in 0.18-μm CMOS. The new amplifier demonstrates a high gain of 16dB at a power consumption of 100mW, and a gain of 10dB at a low power consumption of 19mW. A UWB LNA utilizing resistive shunt feedback technique is reported in 0.18-μm CMOS process. The measurement results of the UWB LNA demonstrate a maximum gain of 10.5dB and a noise figure of 3.3-4.5dB from 3-9.5GHz, while only consuming 9mW power. Based on the distributed amplifier and resistive shunt-feedback amplifier designs, two UWB RF front-ends are developed. One is a distributed LNA-Mixer. Unlike the conventional distributed mixer, which can only deliver low gain and high noise figure, the proposed distributed LNA-Mixer demonstrates 12-14dB gain ,4-5dB noise figure and higher than 10dB return loss at RF and LO ports over 2-16GHz. To overcome the power consumption and chip area problems encountered in distributed circuits, another UWB RF front-end is also designed with lumped elements. This front-end, employing resistive shunt-feedback technique into its LNA design, can achieve a gain of 12dB and noise figure of 8-10dB through 3-10GHz, the return loss of less than -10dB from 3- 10GHz at RF port, and less than -7dB at LO port, while only consuming 25mA current from 1.8V voltage supply. Advisors/Committee Members: Nguyen, Cam (advisor), Everett, Mark (committee member), Kish, Laszlo (committee member), Silva-Martinez, Jose (committee member).

Subjects/Keywords: CMOS RFIC RECEIVER UWB

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APA (6^th Edition):

Guan, X. (2009). Development of RF CMOS receiver front-ends for ultrawideband. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-2719

Chicago Manual of Style (16^th Edition):

Guan, Xin. “Development of RF CMOS receiver front-ends for ultrawideband.” 2009. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/ETD-TAMU-2719.

MLA Handbook (7^th Edition):

Guan, Xin. “Development of RF CMOS receiver front-ends for ultrawideband.” 2009. Web. 18 Apr 2021.

Vancouver:

Guan X. Development of RF CMOS receiver front-ends for ultrawideband. [Internet] [Doctoral dissertation]. Texas A&M University; 2009. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2719.

Council of Science Editors:

Guan X. Development of RF CMOS receiver front-ends for ultrawideband. [Doctoral Dissertation]. Texas A&M University; 2009. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2719

Texas A&M University

16. Park, Joongsuk. Development of microwave and millimeter-wave integrated-circuit stepped-frequency radar sensors for surface and subsurface profiling.

Degree: PhD, Electrical Engineering, 2005, Texas A&M University

URL: http://hdl.handle.net/1969.1/1588

► Two new stepped-frequency continuous wave (SFCW) radar sensor prototypes, based on a coherent super-heterodyne scheme, have been developed using Microwave Integrated Circuits (MICs) and Monolithic… (more)

▼ Two new stepped-frequency continuous wave (SFCW) radar sensor prototypes, based on a coherent super-heterodyne scheme, have been developed using Microwave Integrated Circuits (MICs) and Monolithic Millimeter-Wave Integrated Circuits (MMICs) for various surface and subsurface applications, such as profiling the surface and subsurface of pavements, detecting and localizing small buried Anti-Personnel (AP) mines and measuring the liquid level in a tank. These sensors meet the critical requirements for subsurface and surface measurements including small size, light weight, good accuracy, fine resolution and deep penetration. In addition, two novel wideband microstrip quasi-TEM horn antennae that are capable of integration with a seamless connection have also been designed. Finally, a simple signal processing algorithm, aimed to acquire the in-phase (I) and quadrature (Q) components and to compensate for the I/Q errors, was developed using LabView. The first of the two prototype sensors, named as the microwave SFCW radar sensor operating from 0.6-5.6-GHz, is primarily utilized for assessing the subsurface of pavements. The measured thicknesses of the asphalt and base layers of a pavement sample were very much in agreement with the actual data with less than 0.1-inch error. The measured results on the actual roads showed that the sensor accurately detects the 5-inch asphalt layer of the pavement with a minimal error of 0.25 inches. This sensor represents the first SFCW radar sensor operating from 0.6-5.6-GHz. The other sensor, named as the millimeter-wave SFCW radar sensor, operates in the 29.72-35.7-GHz range. Measurements were performed to verify its feasibility as a surface and sub-surface sensor. The measurement results showed that the sensor has a lateral resolution of 1 inch and a good accuracy in the vertical direction with less than  0.04-inch error. The sensor successfully detected and located AP mines of small sizes buried under the surface of sand with less than 0.75 and 0.08 inches of error in the lateral and vertical directions, respectively. In addition, it also verified that the vertical resolution is not greater than 0.75 inches. This sensor is claimed as the first Ka-band millimeter-wave SFCW radar sensor ever developed for surface and subsurface sensing applications. Advisors/Committee Members: Nguyen, Cam (advisor), Chan, Andrew K. (committee member), Stubbs, Norris (committee member), Cilingiroglu, Ugur (committee member).

Subjects/Keywords: Stepped-Frequency Radar Sensor; Nondestructive Testing; Ultra-Wideband Radar Sensor; Subsurface Radar Sensor; Ground Penetrating Radar Sensor

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APA (6^th Edition):

Park, J. (2005). Development of microwave and millimeter-wave integrated-circuit stepped-frequency radar sensors for surface and subsurface profiling. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/1588

Chicago Manual of Style (16^th Edition):

Park, Joongsuk. “Development of microwave and millimeter-wave integrated-circuit stepped-frequency radar sensors for surface and subsurface profiling.” 2005. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/1588.

MLA Handbook (7^th Edition):

Park, Joongsuk. “Development of microwave and millimeter-wave integrated-circuit stepped-frequency radar sensors for surface and subsurface profiling.” 2005. Web. 18 Apr 2021.

Vancouver:

Park J. Development of microwave and millimeter-wave integrated-circuit stepped-frequency radar sensors for surface and subsurface profiling. [Internet] [Doctoral dissertation]. Texas A&M University; 2005. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/1588.

Council of Science Editors:

Park J. Development of microwave and millimeter-wave integrated-circuit stepped-frequency radar sensors for surface and subsurface profiling. [Doctoral Dissertation]. Texas A&M University; 2005. Available from: http://hdl.handle.net/1969.1/1588

Texas A&M University

17. Han, Jeongwoo. Development of an electronically tunable ultra-wideband radar imaging sensor and its components.

Degree: PhD, Engineering, 2006, Texas A&M University

URL: http://hdl.handle.net/1969.1/3904

► Novel microwave transmitter and receiver circuits have been developed for implementing UWB (Ultra-Wideband) impulse radar imaging sensor operating in frequency band 0.2 to 4 GHz.… (more)

▼ Novel microwave transmitter and receiver circuits have been developed for implementing UWB (Ultra-Wideband) impulse radar imaging sensor operating in frequency band 0.2 to 4 GHz. with tunable operating frequency band. The fundamental system design parameters such as the required transmitting pulse power and the pulse duration were estimated for a presumed specific application, the pavement assessment. The designed transmitter is the tunable monocycle pulse generator with tuning capability for the output pulse duration from 450- to 1200- ps, and has relatively high transmitting pulse power from 200 to 400 mW. Tuning of the pulse duration was implemented by novel PIN diode switch configuration and decoupling circuit, and boosting of transmitting pulse power was made possible by using a high power pulse driving circuit and SRD coupling circuit. The synchronous sampling receiver system was designed by using the integrated sampling mixer and two reference clock oscillators placed in the transmitter and receiver respectively for timing control. A novel integrated CSH (Coupled-Slotline Hybrid)sampling mixer has been developed along with the design of the strobe pulse generator appropriate for the impulse radar system. The integrated sampling mixer has unprecedented conversion loss of 2.5 dB for the pulse signal, bandwidth 5.5 GHz, and dynamic range 50 dB. The introduced UWB LNA (Low Noise Amplifier) design operating up to 4 GHz should be useful for weak signal detection applications. The design of the UWB microstrip quasi-horn antenna was optimized for short pulse transmission with respect to the input return loss and the pulse stretching effect. For signal detection in the signal processing stage, the background subtraction technique and B-scan data format were used. A novel signal monitoring technique was introduced in the signal processing to compensate the frequency modulation effect of the reference clock. The test results for the complete system with respect to some sample multi-layer structures shows good receiving pulse waveform with low distortion, enough pulse penetration depth for 13Â pavement sample structure, and minimum 1-in of range resolution. Advisors/Committee Members: Nguyen, Cam (advisor), Chang, Kai (committee member), Halverson, Don R. (committee member), Stubbs, Norris (committee member).

Subjects/Keywords: Radar; Ultra-Wideband; GPR; SPR; Imaging

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APA (6^th Edition):

Han, J. (2006). Development of an electronically tunable ultra-wideband radar imaging sensor and its components. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/3904

Chicago Manual of Style (16^th Edition):

Han, Jeongwoo. “Development of an electronically tunable ultra-wideband radar imaging sensor and its components.” 2006. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/3904.

MLA Handbook (7^th Edition):

Han, Jeongwoo. “Development of an electronically tunable ultra-wideband radar imaging sensor and its components.” 2006. Web. 18 Apr 2021.

Vancouver:

Han J. Development of an electronically tunable ultra-wideband radar imaging sensor and its components. [Internet] [Doctoral dissertation]. Texas A&M University; 2006. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/3904.

Council of Science Editors:

Han J. Development of an electronically tunable ultra-wideband radar imaging sensor and its components. [Doctoral Dissertation]. Texas A&M University; 2006. Available from: http://hdl.handle.net/1969.1/3904

Texas A&M University

18. Xu, Rui. CMOS Integrated Circuit Design for Ultra-Wideband Transmitters and Receivers.

Degree: PhD, Electrical Engineering, 2010, Texas A&M University

URL: http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-833

► Ultra-wideband technology (UWB) has received tremendous attention since the FCC license release in 2002, which expedited the research and development of UWB technologies on consumer… (more)

▼ Ultra-wideband technology (UWB) has received tremendous attention since the FCC license release in 2002, which expedited the research and development of UWB technologies on consumer products. The applications of UWB range from ground penetrating radar, distance sensor, through wall radar to high speed, short distance communications. The CMOS integrated circuit is an attractive, low cost approach for implementing UWB technology. The improving cut-off frequency of the transistor in CMOS process makes the CMOS circuit capable of handling signal at multi-giga herz. However, some design challenges still remain to be solved. Unlike regular narrow band signal, the UWB signal is discrete pulse instead of continuous wave (CW), which results in the occupancy of wide frequency range. This demands that UWB front-end circuits deliver both time domain and frequency domain signal processing over broad bandwidth. Witnessing these technique challenges, this dissertation aims at designing novel, high performance components for UWB signal generation, down-conversion, as well as accurate timing control using low cost CMOS technology. We proposed, designed and fabricated a carrier based UWB transmitter to facilitate the discrete feature of the UWB signal. The transmitter employs novel twostage -switching to generate carrier based UWB signal. The structure not only minimizes the current consumption but also eliminates the use of a UWB power amplifier. The fabricated transmitter is capable of delivering tunable UWB signal over the complete 3.1GHz -10.6GHz UWB band. By applying the similar two-stage switching approach, we were able to implement a novel switched-LNA based UWB sampling receiver frontend. The proposed front-end has significantly lower power consumption compared to previously published design while keep relatively high gain and low noise at the same time. The designed sampling mixer shows unprecedented performance of 9-12dB voltage conversion gain, 16-25dB noise figure, and power consumption of only 21.6mW(with buffer) and 11.7mW(without buffer) across dc to 3.5GHz with 100M-Hz sampling frequency. The implementation of a precise delay generator is also presented in the dissertation. It relies on an external reference clock to provide accurate timing against process, supply voltage and temperature variation through a negative feedback loop. The delay generator prototype has been verified having digital programmability and tunable delay step resolution. The relative delay shift from desired value is limited to within 0.2%. Advisors/Committee Members: Nguyen, Cam (advisor), Kish, Laszlo (committee member), Cahill, Anthony (committee member), Chan, Cahill K. (committee member).

Subjects/Keywords: CMOS circuit; Ultra-wideband; transmitter; receiver; RF circuit

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APA (6^th Edition):

Xu, R. (2010). CMOS Integrated Circuit Design for Ultra-Wideband Transmitters and Receivers. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-833

Chicago Manual of Style (16^th Edition):

Xu, Rui. “CMOS Integrated Circuit Design for Ultra-Wideband Transmitters and Receivers.” 2010. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-833.

MLA Handbook (7^th Edition):

Xu, Rui. “CMOS Integrated Circuit Design for Ultra-Wideband Transmitters and Receivers.” 2010. Web. 18 Apr 2021.

Vancouver:

Xu R. CMOS Integrated Circuit Design for Ultra-Wideband Transmitters and Receivers. [Internet] [Doctoral dissertation]. Texas A&M University; 2010. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-833.

Council of Science Editors:

Xu R. CMOS Integrated Circuit Design for Ultra-Wideband Transmitters and Receivers. [Doctoral Dissertation]. Texas A&M University; 2010. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-833

Texas A&M University

19. Jin, Yalin. Radio-frequency integrated-circuit design for CMOS single-chip UWB systems.

Degree: PhD, Electrical Engineering, 2009, Texas A&M University

URL: http://hdl.handle.net/1969.1/ETD-TAMU-2724

► Low cost, a high-integrated capability, and low-power consumption are the basic requirements for ultra wide band (UWB) system design in order for the system to… (more)

▼ Low cost, a high-integrated capability, and low-power consumption are the basic requirements for ultra wide band (UWB) system design in order for the system to be adopted in various commercial electronic devices in the near future. Thus, the highly integrated transceiver is trended to be manufactured by companies using the latest silicon based complimentary metal-oxide-silicon (CMOS) processes. In this dissertation, several new structural designs are proposed, which provide solutions for some crucial RF blocks in CMOS for UWB for commercial applications. In this dissertation, there is a discussion of the development, as well as an illustration, of a fully-integrated ultra-broadband transmit/receive (T/R) switch which uses nMOS transistors with deep n-well in a standard 0.18-μm CMOS process. The new CMOS T/R switch exploits patterned-ground-shield on-chip inductors together with MOSFET’s parasitic capacitances in order to synthesize artificial transmission lines which result in low insertion loss over an extremely wide bandwidth. Within DC-10 GHz, 10-18 GHz, and 18-20 GHz, the developed CMOS T/R switch exhibits insertion loss of less than 0.7, 1.0 and 2.5 dB and isolation between 32-60 dB, 25-32 dB, and 25-27 dB, respectively. The measured 1-dB power compression point and input third-order intercept point reach as high as 26.2 and 41 dBm, respectively. Further, there is a discussion and demonstration of a tunable Carrier-based Time-gated UWB transmitter in this dissertation which uses a broadband multiplier, a novel fully integrated single pole single throw (SPST) switch designed by the CMOS process, where a tunable instantaneous bandwidth from 500 MHz to 4 GHz is exhibited by adjusting the width of the base band impulses in time domain. The SPST switch utilizes the synthetic transmission line concept and multiple reflections technique in order to realize a flat insertion loss less than 1.5 dB from 3.1 GHz to 10.6 GHz and an extremely high isolation of more than 45 dB within this frequency range. A fully integrated complementary LC voltage control oscillator (VCO), designed with a tunable buffer, operates from 4.6 GHz to 5.9 GHz. The measurement results demonstrate that the integrated VCO has a very low phase noise of –117 dBc/ Hz at 1 MHz offset. The fully integrated VCO achieves a very high figure of merit (FOM) of 183.5 using standard CMOS process while consuming 4 mA DC current. Advisors/Committee Members: Nguyen, Cam (advisor), Everett, Mark (committee member), Kish, Laszlo (committee member), Silva-Mart?z,Jos? (committee member).

Subjects/Keywords: CMOS UWB

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APA (6^th Edition):

Jin, Y. (2009). Radio-frequency integrated-circuit design for CMOS single-chip UWB systems. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-2724

Chicago Manual of Style (16^th Edition):

Jin, Yalin. “Radio-frequency integrated-circuit design for CMOS single-chip UWB systems.” 2009. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/ETD-TAMU-2724.

MLA Handbook (7^th Edition):

Jin, Yalin. “Radio-frequency integrated-circuit design for CMOS single-chip UWB systems.” 2009. Web. 18 Apr 2021.

Vancouver:

Jin Y. Radio-frequency integrated-circuit design for CMOS single-chip UWB systems. [Internet] [Doctoral dissertation]. Texas A&M University; 2009. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2724.

Council of Science Editors:

Jin Y. Radio-frequency integrated-circuit design for CMOS single-chip UWB systems. [Doctoral Dissertation]. Texas A&M University; 2009. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2724

Texas A&M University

20. Kim, Seoktae. Millimeter-wave sensors.

Degree: PhD, Electrical Engineering, 2006, Texas A&M University

URL: http://hdl.handle.net/1969.1/3134

► New millimeter wave interferometric, multifunctional sensors have been studied for industrial sensing applications: displacement measurement, liquid-level gauging and velocimetry. Two types of configuration were investigated… (more)

▼ New millimeter wave interferometric, multifunctional sensors have been studied for industrial sensing applications: displacement measurement, liquid-level gauging and velocimetry. Two types of configuration were investigated to implement the sensor: homodyne and double-channel homodyne. Both sensors were integrated on planar structure using MMIC (Microwave Monolithic Integrated Circuit) and MIC (Microwave Integrated Circuit) technology for light, compact, and low-cost design. The displacement measurement results employing homodyne configuration show that sub-millimeter resolution in the order of 0.05 mm is feasible without correcting the non-linear phase response of the quadrature mixer. The double-channel homodyne configuration is proposed to suppress the nonlinearity of the quadrature mixer and to estimate the effect of frequency stability of a microwave signal source without the help of additional test equipment, at the loss of a slight increase of circuit complexity. The digital quadrature mixer is constituted by a quadrature-sampling signal processing technique and takes an important role in the elimination of conventional quadrature mixer's nonlinear phase response. Also, in the same displacement measurement, the radar sensor with the double-channel homodyne configuration provided a better resolution of 0.01mm, the best-reported resolution to date in terms of wavelength in the millimeter wave range, than the sensor employing simple homodyne configuration. Short-term stability of a microwave signal source, which is an important issue in phase sensitive measurement, is also considered through phase noise spectrum obtained by FFT spectral estimator at Intermediate Frequency (IF). The developed sensors demonstrate that displacement sensing with micron resolution and accuracy and high-resolution low-velocity measurement are feasible using millimeter-wave interferometer, which is attractive not only for displacement and velocity measurement, but also for other industrial sensing applications requiring very fine resolution and accuracy. Advisors/Committee Members: Nguyen, Cam (advisor), Su, Chin B. (committee member), Nevels, Robert D. (committee member), Smith, Roger E. (committee member).

Subjects/Keywords: Radio Interferometry; Millimeter-wave interferometer; Displacement measurement; Velocity measurement; Liquid-level gauging

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APA (6^th Edition):

Kim, S. (2006). Millimeter-wave sensors. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/3134

Chicago Manual of Style (16^th Edition):

Kim, Seoktae. “Millimeter-wave sensors.” 2006. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/3134.

MLA Handbook (7^th Edition):

Kim, Seoktae. “Millimeter-wave sensors.” 2006. Web. 18 Apr 2021.

Vancouver:

Kim S. Millimeter-wave sensors. [Internet] [Doctoral dissertation]. Texas A&M University; 2006. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/3134.

Council of Science Editors:

Kim S. Millimeter-wave sensors. [Doctoral Dissertation]. Texas A&M University; 2006. Available from: http://hdl.handle.net/1969.1/3134

Texas A&M University

21. Mukherjee, Souvik. Three Dimensional Controlled-source Electromagnetic Edge-based Finite Element Modeling of Conductive and Permeable Heterogeneities.

Degree: PhD, Geophysics, 2010, Texas A&M University

URL: http://hdl.handle.net/1969.1/ETD-TAMU-2010-08-8317

► Presence of cultural refuse has long posed a serious challenge to meaningful geological interpretation of near surface controlled–source electromagnetic data (CSEM). Cultural refuse, such as… (more)

▼ Presence of cultural refuse has long posed a serious challenge to meaningful geological interpretation of near surface controlled–source electromagnetic data (CSEM). Cultural refuse, such as buried pipes, underground storage tanks, unexploded ordnance, is often highly conductive and magnetically permeable. Interpretation of the CSEM response in the presence of cultural noise requires an understanding of electromagnetic field diffusion and the effects of anomalous highly conductive and permeable structures embedded in geologic media. While many numerical techniques have been used to evaluate the response of three dimensional subsurface conductivity distributions, there is a lack of approaches for modeling the EM response incorporating variations in both subsurface conductivity σ and relative permeability μr. In this dissertation, I present a new three dimensional edge–based finite element (FE) algorithm capable of modeling the CSEM response of buried conductive and permeable targets. A coupled potential formulation for variable μ using the vector magnetic potential A and scalar electric potential V gives rise to an ungauged curl–curl equation. Using reluctivity (v=1/mu ), a new term in geophysical applications instead of traditional magnetic susceptibility, facilitates a separation of primary and secondary potentials. The resulting differential equation is solved using the finite element method (FEM) on a tetrahedral mesh with local refinement capabilities. The secondary A and V potentials are expressed in terms of the vector edge basis vectors and the scalar nodal basis functions respectively. The finite element matrix is solved using a Jacobi preconditioned QMR solver. Post processing steps to interpolate the vector potentials on the nodes of the mesh are described. The algorithm is validated against a number of analytic and multi dimensional numeric solutions. The code has been deployed to estimate the influence of magnetic permeability on the mutual coupling between multiple geological and cultural targets. Some limitations of the code with regards to speed and performance at high frequency, conductivity and permeability values have been noted. Directions for further improvement and expanding the range of applicability have been proposed. Advisors/Committee Members: Everett, Mark E. (advisor), Gibson, Richard (committee member), Ikelle, Luc (committee member), Nguyen, Cam (committee member), Velimsky, Jakub (committee member).

Subjects/Keywords: CSEM; controlled-source; electromagnetics; magnetic permeability; edge basis vectors; finite elements; forward modeling

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APA (6^th Edition):

Mukherjee, S. (2010). Three Dimensional Controlled-source Electromagnetic Edge-based Finite Element Modeling of Conductive and Permeable Heterogeneities. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-2010-08-8317

Chicago Manual of Style (16^th Edition):

Mukherjee, Souvik. “Three Dimensional Controlled-source Electromagnetic Edge-based Finite Element Modeling of Conductive and Permeable Heterogeneities.” 2010. Doctoral Dissertation, Texas A&M University. Accessed April 18, 2021. http://hdl.handle.net/1969.1/ETD-TAMU-2010-08-8317.

MLA Handbook (7^th Edition):

Mukherjee, Souvik. “Three Dimensional Controlled-source Electromagnetic Edge-based Finite Element Modeling of Conductive and Permeable Heterogeneities.” 2010. Web. 18 Apr 2021.

Vancouver:

Mukherjee S. Three Dimensional Controlled-source Electromagnetic Edge-based Finite Element Modeling of Conductive and Permeable Heterogeneities. [Internet] [Doctoral dissertation]. Texas A&M University; 2010. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2010-08-8317.

Council of Science Editors:

Mukherjee S. Three Dimensional Controlled-source Electromagnetic Edge-based Finite Element Modeling of Conductive and Permeable Heterogeneities. [Doctoral Dissertation]. Texas A&M University; 2010. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2010-08-8317

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Open Access Theses and Dissertations