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You searched for +publisher:"North Carolina State University" +contributor:("Zlatko Sitar, Committee Member"). Showing records 1 – 12 of 12 total matches.

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North Carolina State University

1. Craft, Hughes Spalding. Spectroscopy of Oxide-GaN Interfaces.

Degree: PhD, Materials Science and Engineering, 2009, North Carolina State University

 GaN-based devices are of interest for applications requiring high-frequency, high-power operation at elevated temperatures. As in traditional, silicon-based devices, integration of semiconducting phases with insulators… (more)

Subjects/Keywords: ferroelectric; spectroscopy; epitaxy; compound semiconductor; oxide

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APA (6th Edition):

Craft, H. S. (2009). Spectroscopy of Oxide-GaN Interfaces. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5137

Chicago Manual of Style (16th Edition):

Craft, Hughes Spalding. “Spectroscopy of Oxide-GaN Interfaces.” 2009. Doctoral Dissertation, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5137.

MLA Handbook (7th Edition):

Craft, Hughes Spalding. “Spectroscopy of Oxide-GaN Interfaces.” 2009. Web. 17 Oct 2019.

Vancouver:

Craft HS. Spectroscopy of Oxide-GaN Interfaces. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5137.

Council of Science Editors:

Craft HS. Spectroscopy of Oxide-GaN Interfaces. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5137


North Carolina State University

2. Aygun, Seymen Murat. Processing Science of Barium Titanate.

Degree: PhD, Materials Science and Engineering, 2009, North Carolina State University

 Barium titanate and barium strontium titanate thin films were deposited on base metal foils via chemical solution deposition and radio frequency magnetron sputtering. The films… (more)

Subjects/Keywords: barium titanate; structure-property relationships; chemical solution deposition; thin films; ferroelectrics

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APA (6th Edition):

Aygun, S. M. (2009). Processing Science of Barium Titanate. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5489

Chicago Manual of Style (16th Edition):

Aygun, Seymen Murat. “Processing Science of Barium Titanate.” 2009. Doctoral Dissertation, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5489.

MLA Handbook (7th Edition):

Aygun, Seymen Murat. “Processing Science of Barium Titanate.” 2009. Web. 17 Oct 2019.

Vancouver:

Aygun SM. Processing Science of Barium Titanate. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5489.

Council of Science Editors:

Aygun SM. Processing Science of Barium Titanate. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5489


North Carolina State University

3. Wheeler, Virginia D. Structure and Properties of Epitaxial Dielectrics on GaN.

Degree: PhD, Materials Science and Engineering, 2010, North Carolina State University

 GaN is recognized as a possible material for metal oxide semiconductor field effect transistors (MOSFETs) used in high temperature, high power and high speed electronic… (more)

Subjects/Keywords: lanthanum oxide; scandium oxide; GaN; gate oxides; TEM; XRD; MOSFET; band offsets; XPS; power devices; epitaxial dielectrics; RHEED; crystalline oxide

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APA (6th Edition):

Wheeler, V. D. (2010). Structure and Properties of Epitaxial Dielectrics on GaN. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/6224

Chicago Manual of Style (16th Edition):

Wheeler, Virginia D. “Structure and Properties of Epitaxial Dielectrics on GaN.” 2010. Doctoral Dissertation, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/6224.

MLA Handbook (7th Edition):

Wheeler, Virginia D. “Structure and Properties of Epitaxial Dielectrics on GaN.” 2010. Web. 17 Oct 2019.

Vancouver:

Wheeler VD. Structure and Properties of Epitaxial Dielectrics on GaN. [Internet] [Doctoral dissertation]. North Carolina State University; 2010. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6224.

Council of Science Editors:

Wheeler VD. Structure and Properties of Epitaxial Dielectrics on GaN. [Doctoral Dissertation]. North Carolina State University; 2010. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6224


North Carolina State University

4. Jackson, Shannon Marie. FINAL Microstructure-Property Study of Cu1-xTax Thin Films.

Degree: MS, Materials Science and Engineering, 2007, North Carolina State University

 A series of Cu1-xTax (x = 0.05 to 0.5) thin films have been produced by DC magnetron sputter deposition using co-deposition (alloy) and sequential (layered)… (more)

Subjects/Keywords: thin films; nanolaminate; nanolayers; sputter deposition; copper; tantalum

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APA (6th Edition):

Jackson, S. M. (2007). FINAL Microstructure-Property Study of Cu1-xTax Thin Films. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/2500

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jackson, Shannon Marie. “FINAL Microstructure-Property Study of Cu1-xTax Thin Films.” 2007. Thesis, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/2500.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jackson, Shannon Marie. “FINAL Microstructure-Property Study of Cu1-xTax Thin Films.” 2007. Web. 17 Oct 2019.

Vancouver:

Jackson SM. FINAL Microstructure-Property Study of Cu1-xTax Thin Films. [Internet] [Thesis]. North Carolina State University; 2007. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2500.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jackson SM. FINAL Microstructure-Property Study of Cu1-xTax Thin Films. [Thesis]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2500

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

5. Koeck, Franz Alexander. Thermionic Emission from Doped and Nanocrystalline Diamond.

Degree: MS, Physics, 2003, North Carolina State University

 Microwave Plasma assisted Chemical Vapor Deposition (MPCVD) has been utilized to synthesize nitrogen doped and intrinsic nanocrystalline diamond films to investigate thermionic field emission behavior.… (more)

Subjects/Keywords: CVD; field emission; diamond; thermionic emission

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APA (6th Edition):

Koeck, F. A. (2003). Thermionic Emission from Doped and Nanocrystalline Diamond. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/596

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Koeck, Franz Alexander. “Thermionic Emission from Doped and Nanocrystalline Diamond.” 2003. Thesis, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/596.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Koeck, Franz Alexander. “Thermionic Emission from Doped and Nanocrystalline Diamond.” 2003. Web. 17 Oct 2019.

Vancouver:

Koeck FA. Thermionic Emission from Doped and Nanocrystalline Diamond. [Internet] [Thesis]. North Carolina State University; 2003. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/596.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Koeck FA. Thermionic Emission from Doped and Nanocrystalline Diamond. [Thesis]. North Carolina State University; 2003. Available from: http://www.lib.ncsu.edu/resolver/1840.16/596

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

6. Losego, Mark Daniel. Interfacing Epitaxial Oxides to Gallium Nitride.

Degree: PhD, Materials Science and Engineering, 2008, North Carolina State University

 Molecular beam epitaxy (MBE) is lauded for its ability to control thin film material structures at the atomic level. Controlling the chemistry and structure of… (more)

Subjects/Keywords: lattice match; wide gap semiconductors; rocksalt oxides; thin films; molecular beam epitaxy; magnesium oxide; calcium oxide; ytterbium monoxide; gallium nitride; MBE

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APA (6th Edition):

Losego, M. D. (2008). Interfacing Epitaxial Oxides to Gallium Nitride. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3747

Chicago Manual of Style (16th Edition):

Losego, Mark Daniel. “Interfacing Epitaxial Oxides to Gallium Nitride.” 2008. Doctoral Dissertation, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3747.

MLA Handbook (7th Edition):

Losego, Mark Daniel. “Interfacing Epitaxial Oxides to Gallium Nitride.” 2008. Web. 17 Oct 2019.

Vancouver:

Losego MD. Interfacing Epitaxial Oxides to Gallium Nitride. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3747.

Council of Science Editors:

Losego MD. Interfacing Epitaxial Oxides to Gallium Nitride. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3747


North Carolina State University

7. Ihlefeld, Jon F. Synthesis and Properties of Barium Titanate Solid Solution Thin Films on Copper Substrates.

Degree: PhD, Materials Science and Engineering, 2006, North Carolina State University

 Barium titanate thin films were deposited via chemical solution deposition using a hybrid-chelate chemistry directly on copper foil substrates. A process was developed to crystallize… (more)

Subjects/Keywords: hafnium; tin; zirconium; flux; copper; equilibria; grain size; size effects; sol-gel; barium titanate; film; ferroelectric; doping

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APA (6th Edition):

Ihlefeld, J. F. (2006). Synthesis and Properties of Barium Titanate Solid Solution Thin Films on Copper Substrates. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4369

Chicago Manual of Style (16th Edition):

Ihlefeld, Jon F. “Synthesis and Properties of Barium Titanate Solid Solution Thin Films on Copper Substrates.” 2006. Doctoral Dissertation, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/4369.

MLA Handbook (7th Edition):

Ihlefeld, Jon F. “Synthesis and Properties of Barium Titanate Solid Solution Thin Films on Copper Substrates.” 2006. Web. 17 Oct 2019.

Vancouver:

Ihlefeld JF. Synthesis and Properties of Barium Titanate Solid Solution Thin Films on Copper Substrates. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4369.

Council of Science Editors:

Ihlefeld JF. Synthesis and Properties of Barium Titanate Solid Solution Thin Films on Copper Substrates. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4369


North Carolina State University

8. Lee, Jaeseob. Direct Bonding of Gallium Nitride to Silicon Carbide: Physical, and Electrical Characterization.

Degree: PhD, Materials Science and Engineering, 2003, North Carolina State University

 The direct bonding method is applied to the GaN/SiC system, and the processing conditions for successful direct bonding are clarified. Direct bonding of GaN/SiC is… (more)

Subjects/Keywords: strain; silicon carbide; C-V; I-V; gallium nitride; direct bonding

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APA (6th Edition):

Lee, J. (2003). Direct Bonding of Gallium Nitride to Silicon Carbide: Physical, and Electrical Characterization. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4443

Chicago Manual of Style (16th Edition):

Lee, Jaeseob. “Direct Bonding of Gallium Nitride to Silicon Carbide: Physical, and Electrical Characterization.” 2003. Doctoral Dissertation, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/4443.

MLA Handbook (7th Edition):

Lee, Jaeseob. “Direct Bonding of Gallium Nitride to Silicon Carbide: Physical, and Electrical Characterization.” 2003. Web. 17 Oct 2019.

Vancouver:

Lee J. Direct Bonding of Gallium Nitride to Silicon Carbide: Physical, and Electrical Characterization. [Internet] [Doctoral dissertation]. North Carolina State University; 2003. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4443.

Council of Science Editors:

Lee J. Direct Bonding of Gallium Nitride to Silicon Carbide: Physical, and Electrical Characterization. [Doctoral Dissertation]. North Carolina State University; 2003. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4443


North Carolina State University

9. Tyler, Talmage. Characterization of Isolated Nanodiamond Particles.

Degree: PhD, Materials Science and Engineering, 2004, North Carolina State University

 As the use of materials of increasingly smaller dimensions grows, so does the need to better understand the properties of materials at these small scales.… (more)

Subjects/Keywords: nanoscale materials; vacuum microelectronics; field emission; diamond; nanodiamond; electrophoresis

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APA (6th Edition):

Tyler, T. (2004). Characterization of Isolated Nanodiamond Particles. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5222

Chicago Manual of Style (16th Edition):

Tyler, Talmage. “Characterization of Isolated Nanodiamond Particles.” 2004. Doctoral Dissertation, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5222.

MLA Handbook (7th Edition):

Tyler, Talmage. “Characterization of Isolated Nanodiamond Particles.” 2004. Web. 17 Oct 2019.

Vancouver:

Tyler T. Characterization of Isolated Nanodiamond Particles. [Internet] [Doctoral dissertation]. North Carolina State University; 2004. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5222.

Council of Science Editors:

Tyler T. Characterization of Isolated Nanodiamond Particles. [Doctoral Dissertation]. North Carolina State University; 2004. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5222


North Carolina State University

10. Smith, Scott Alan. Inductively Coupled Plasma Etching of III-N Semiconductors.

Degree: PhD, Materials Science and Engineering, 2002, North Carolina State University

 The principal focus of this research was the employment of an in-house designed and constructed inductively coupled plasma (ICP) system for integrated studies pertaining to… (more)

Subjects/Keywords: semiconductor; Gallium Nitride; GaN; etching; ICP

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APA (6th Edition):

Smith, S. A. (2002). Inductively Coupled Plasma Etching of III-N Semiconductors. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5898

Chicago Manual of Style (16th Edition):

Smith, Scott Alan. “Inductively Coupled Plasma Etching of III-N Semiconductors.” 2002. Doctoral Dissertation, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5898.

MLA Handbook (7th Edition):

Smith, Scott Alan. “Inductively Coupled Plasma Etching of III-N Semiconductors.” 2002. Web. 17 Oct 2019.

Vancouver:

Smith SA. Inductively Coupled Plasma Etching of III-N Semiconductors. [Internet] [Doctoral dissertation]. North Carolina State University; 2002. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5898.

Council of Science Editors:

Smith SA. Inductively Coupled Plasma Etching of III-N Semiconductors. [Doctoral Dissertation]. North Carolina State University; 2002. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5898


North Carolina State University

11. Reitmeier, Zachary J. The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 The present research was undertaken with the goals of understanding the evolution of defects and strain in heteroepitaxial AlN and GaN films deposited via metalorganic… (more)

Subjects/Keywords: hydrogen etching; cantilever epitaxy; lateral overgrowth; AlN; MOVPE; heteroepitaxy; threading dislocations; GaN

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APA (6th Edition):

Reitmeier, Z. J. (2005). The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4541

Chicago Manual of Style (16th Edition):

Reitmeier, Zachary J. “The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy.” 2005. Doctoral Dissertation, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/4541.

MLA Handbook (7th Edition):

Reitmeier, Zachary J. “The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy.” 2005. Web. 17 Oct 2019.

Vancouver:

Reitmeier ZJ. The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4541.

Council of Science Editors:

Reitmeier ZJ. The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4541


North Carolina State University

12. Saripalli, Yoganand Nrusimha. Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures.

Degree: PhD, Materials Science and Engineering, 2006, North Carolina State University

 The physical properties of GaN, high saturation velocity, high breakdown fields, high electron mobility, wide bandgap energy and high thermal conductivity, make it a promising… (more)

Subjects/Keywords: Selected Area Regrowth; Reactive Ion Etching; MOSFETs; MOCVD; Epitaxial Growth; Low Temperature Regrowth; HFETs; GaN; Ohmic Contacts; Enhancement Mode GaN MOSFET

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APA (6th Edition):

Saripalli, Y. N. (2006). Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5506

Chicago Manual of Style (16th Edition):

Saripalli, Yoganand Nrusimha. “Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures.” 2006. Doctoral Dissertation, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5506.

MLA Handbook (7th Edition):

Saripalli, Yoganand Nrusimha. “Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures.” 2006. Web. 17 Oct 2019.

Vancouver:

Saripalli YN. Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5506.

Council of Science Editors:

Saripalli YN. Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5506

.