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You searched for +publisher:"North Carolina State University" +contributor:("Mark Johnson, Committee Member"). Showing records 1 – 28 of 28 total matches.

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North Carolina State University

1. Suresh, Arun. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics.

Degree: PhD, Electrical Engineering, 2010, North Carolina State University

 The ability to make electronic devices, that are transparent to visible and near infrared wavelength, is a relatively new field of research in the development… (more)

Subjects/Keywords: Amorphous oxide semiconductors; thin-film transistors; TFT; IGZO; Indium gallium zinc oxide; transparent circuits; bias stability; ring oscillator; non-volatile memory

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APA (6th Edition):

Suresh, A. (2010). Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/6157

Chicago Manual of Style (16th Edition):

Suresh, Arun. “Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics.” 2010. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/6157.

MLA Handbook (7th Edition):

Suresh, Arun. “Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics.” 2010. Web. 06 Aug 2020.

Vancouver:

Suresh A. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics. [Internet] [Doctoral dissertation]. North Carolina State University; 2010. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6157.

Council of Science Editors:

Suresh A. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics. [Doctoral Dissertation]. North Carolina State University; 2010. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6157


North Carolina State University

2. Krishnan, Mandayam Gomatam. Electronic Structure Calculations of Bi2Te3/Sb2Te3 Superlattices for Thermoelectric Applications.

Degree: PhD, Physics, 2009, North Carolina State University

 The electronic structure of Bi2Te3/Sb2Te3/BiSbTe3 in quintuple layers is calculated at the atomic level for applications in thermo electric applications of micro refrigeration and power… (more)

Subjects/Keywords: Micro power generation and refrigeration; Thermoelectrics; Electronic Structure Calculations; Bismuth and Antimony Telluride Superlattices; Density Functional Theory; Bi2Te3/Sb2Te3 Superlattices

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APA (6th Edition):

Krishnan, M. G. (2009). Electronic Structure Calculations of Bi2Te3/Sb2Te3 Superlattices for Thermoelectric Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4201

Chicago Manual of Style (16th Edition):

Krishnan, Mandayam Gomatam. “Electronic Structure Calculations of Bi2Te3/Sb2Te3 Superlattices for Thermoelectric Applications.” 2009. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4201.

MLA Handbook (7th Edition):

Krishnan, Mandayam Gomatam. “Electronic Structure Calculations of Bi2Te3/Sb2Te3 Superlattices for Thermoelectric Applications.” 2009. Web. 06 Aug 2020.

Vancouver:

Krishnan MG. Electronic Structure Calculations of Bi2Te3/Sb2Te3 Superlattices for Thermoelectric Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4201.

Council of Science Editors:

Krishnan MG. Electronic Structure Calculations of Bi2Te3/Sb2Te3 Superlattices for Thermoelectric Applications. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4201


North Carolina State University

3. Hydrick, Jennifer Marie. Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production.

Degree: MS, Materials Science and Engineering, 2007, North Carolina State University

 As scaling continues in the semiconductor industry, silicon-on-insulator (SOI) wafers are increasingly becoming the substrate of choice, due to higher channel mobility, effective device isolation,… (more)

Subjects/Keywords: lattice parameter; scaling; stability; solid solution; germanium; barium oxide; Ba1-xSrxO; silicon; strontium titanate; strontium oxide; BaO; SrO; Ca1-xSrxTiO3; calcium titanate; molecular beam epitaxy; RHEED; reflection high energy electron diffraction; MBE; AFM; CaTiO3; SrTiO3; barium strontium oxide; HRTEM; TEM; Mg; template; silicon-on-insulator; Si; Ca; O; Sr; Ti; Ba; lattice match; insulator; (001); epitaxy; Floating Epitaxy; RBS; XRD; epitaxial; SOI; SIMS; titanium; in-situ; calcium strontium titanate; ITRS; solid phase epitaxy; growth; deposition; semiconductor; heteroepitaxy; strontium; barium; silicon on insulator

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APA (6th Edition):

Hydrick, J. M. (2007). Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/2307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hydrick, Jennifer Marie. “Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production.” 2007. Thesis, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/2307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hydrick, Jennifer Marie. “Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production.” 2007. Web. 06 Aug 2020.

Vancouver:

Hydrick JM. Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production. [Internet] [Thesis]. North Carolina State University; 2007. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hydrick JM. Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production. [Thesis]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

4. Morgensen, Michael. High-Frequency FET Modeling in GaN with Dispersion Effects.

Degree: MS, Electrical Engineering, 2008, North Carolina State University

Subjects/Keywords: dispersion; HFET; GaN; small-signal modeling; S-parameters

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APA (6th Edition):

Morgensen, M. (2008). High-Frequency FET Modeling in GaN with Dispersion Effects. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/397

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Morgensen, Michael. “High-Frequency FET Modeling in GaN with Dispersion Effects.” 2008. Thesis, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/397.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Morgensen, Michael. “High-Frequency FET Modeling in GaN with Dispersion Effects.” 2008. Web. 06 Aug 2020.

Vancouver:

Morgensen M. High-Frequency FET Modeling in GaN with Dispersion Effects. [Internet] [Thesis]. North Carolina State University; 2008. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/397.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Morgensen M. High-Frequency FET Modeling in GaN with Dispersion Effects. [Thesis]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/397

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

5. Losego, Mark Daniel. The Chemical Solution Deposition of Lead Zirconate Titanate (PZT) Thin Films Directly on Copper Surfaces.

Degree: MS, Materials Science and Engineering, 2005, North Carolina State University

 Traditionally, multifunctional complex oxide thin films, like the common ferroelectric materials lead zirconate titanate (PZT) and barium titanate (BaTiO₃) have been limited to substrates with… (more)

Subjects/Keywords: ferroelectrics; CSD; sol-gel; embedded passives; PZT; thin film; piezoelectric

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APA (6th Edition):

Losego, M. D. (2005). The Chemical Solution Deposition of Lead Zirconate Titanate (PZT) Thin Films Directly on Copper Surfaces. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/1310

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Losego, Mark Daniel. “The Chemical Solution Deposition of Lead Zirconate Titanate (PZT) Thin Films Directly on Copper Surfaces.” 2005. Thesis, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/1310.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Losego, Mark Daniel. “The Chemical Solution Deposition of Lead Zirconate Titanate (PZT) Thin Films Directly on Copper Surfaces.” 2005. Web. 06 Aug 2020.

Vancouver:

Losego MD. The Chemical Solution Deposition of Lead Zirconate Titanate (PZT) Thin Films Directly on Copper Surfaces. [Internet] [Thesis]. North Carolina State University; 2005. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/1310.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Losego MD. The Chemical Solution Deposition of Lead Zirconate Titanate (PZT) Thin Films Directly on Copper Surfaces. [Thesis]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/1310

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

6. Ozbek, Ayse Merve. Schottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design.

Degree: MS, Electrical Engineering, 2008, North Carolina State University

Subjects/Keywords: GaN; schottky; MOSFET; HFET

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APA (6th Edition):

Ozbek, A. M. (2008). Schottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/1668

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ozbek, Ayse Merve. “Schottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design.” 2008. Thesis, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/1668.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ozbek, Ayse Merve. “Schottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design.” 2008. Web. 06 Aug 2020.

Vancouver:

Ozbek AM. Schottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design. [Internet] [Thesis]. North Carolina State University; 2008. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/1668.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ozbek AM. Schottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design. [Thesis]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/1668

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

7. Ramachandran, Ramya. Investigation of Surface States in Gallium Nitride Devices using a New High Frequency Measurement Technique.

Degree: MS, Electrical Engineering, 2006, North Carolina State University

 Surface states place a limitation on the high-frequency behavior of Gallium Nitride devices by causing RF dispersion. They are also a source of undesirable 1⁄f… (more)

Subjects/Keywords: GaN; RF dispersion; Characterization; Surface states

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APA (6th Edition):

Ramachandran, R. (2006). Investigation of Surface States in Gallium Nitride Devices using a New High Frequency Measurement Technique. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/1411

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ramachandran, Ramya. “Investigation of Surface States in Gallium Nitride Devices using a New High Frequency Measurement Technique.” 2006. Thesis, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/1411.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ramachandran, Ramya. “Investigation of Surface States in Gallium Nitride Devices using a New High Frequency Measurement Technique.” 2006. Web. 06 Aug 2020.

Vancouver:

Ramachandran R. Investigation of Surface States in Gallium Nitride Devices using a New High Frequency Measurement Technique. [Internet] [Thesis]. North Carolina State University; 2006. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/1411.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ramachandran R. Investigation of Surface States in Gallium Nitride Devices using a New High Frequency Measurement Technique. [Thesis]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/1411

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

8. Ma, Lei. Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET.

Degree: PhD, Electrical Engineering, 2008, North Carolina State University

Subjects/Keywords: Schottky barrier MISFET; Sapphire; MOCVD; Schottky Barrier MOSFET

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APA (6th Edition):

Ma, L. (2008). Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4478

Chicago Manual of Style (16th Edition):

Ma, Lei. “Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET.” 2008. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4478.

MLA Handbook (7th Edition):

Ma, Lei. “Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET.” 2008. Web. 06 Aug 2020.

Vancouver:

Ma L. Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4478.

Council of Science Editors:

Ma L. Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4478


North Carolina State University

9. Maitra, Kingsuk. Electron Transport in Bulk-Si NMOSFETs in Presence of High-k Insulator-charge Trapping and Mobility.

Degree: PhD, Electrical Engineering, 2006, North Carolina State University

 Recent advancements in gate stack engineering has led to the development of aggressively scaled, high mobility, high-k dielectric based NMOSFETs with metal gates. Most of… (more)

Subjects/Keywords: charge trapping; transport; high-k; mobility; bulk-Si

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APA (6th Edition):

Maitra, K. (2006). Electron Transport in Bulk-Si NMOSFETs in Presence of High-k Insulator-charge Trapping and Mobility. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3246

Chicago Manual of Style (16th Edition):

Maitra, Kingsuk. “Electron Transport in Bulk-Si NMOSFETs in Presence of High-k Insulator-charge Trapping and Mobility.” 2006. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3246.

MLA Handbook (7th Edition):

Maitra, Kingsuk. “Electron Transport in Bulk-Si NMOSFETs in Presence of High-k Insulator-charge Trapping and Mobility.” 2006. Web. 06 Aug 2020.

Vancouver:

Maitra K. Electron Transport in Bulk-Si NMOSFETs in Presence of High-k Insulator-charge Trapping and Mobility. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3246.

Council of Science Editors:

Maitra K. Electron Transport in Bulk-Si NMOSFETs in Presence of High-k Insulator-charge Trapping and Mobility. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3246


North Carolina State University

10. Veety, Matthew. Four Terminal Gallium Nitride MOSFETs.

Degree: PhD, Electrical Engineering, 2010, North Carolina State University

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APA (6th Edition):

Veety, M. (2010). Four Terminal Gallium Nitride MOSFETs. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/6656

Chicago Manual of Style (16th Edition):

Veety, Matthew. “Four Terminal Gallium Nitride MOSFETs.” 2010. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/6656.

MLA Handbook (7th Edition):

Veety, Matthew. “Four Terminal Gallium Nitride MOSFETs.” 2010. Web. 06 Aug 2020.

Vancouver:

Veety M. Four Terminal Gallium Nitride MOSFETs. [Internet] [Doctoral dissertation]. North Carolina State University; 2010. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6656.

Council of Science Editors:

Veety M. Four Terminal Gallium Nitride MOSFETs. [Doctoral Dissertation]. North Carolina State University; 2010. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6656


North Carolina State University

11. Losego, Mark Daniel. Interfacing Epitaxial Oxides to Gallium Nitride.

Degree: PhD, Materials Science and Engineering, 2008, North Carolina State University

 Molecular beam epitaxy (MBE) is lauded for its ability to control thin film material structures at the atomic level. Controlling the chemistry and structure of… (more)

Subjects/Keywords: lattice match; wide gap semiconductors; rocksalt oxides; thin films; molecular beam epitaxy; magnesium oxide; calcium oxide; ytterbium monoxide; gallium nitride; MBE

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APA (6th Edition):

Losego, M. D. (2008). Interfacing Epitaxial Oxides to Gallium Nitride. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3747

Chicago Manual of Style (16th Edition):

Losego, Mark Daniel. “Interfacing Epitaxial Oxides to Gallium Nitride.” 2008. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3747.

MLA Handbook (7th Edition):

Losego, Mark Daniel. “Interfacing Epitaxial Oxides to Gallium Nitride.” 2008. Web. 06 Aug 2020.

Vancouver:

Losego MD. Interfacing Epitaxial Oxides to Gallium Nitride. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3747.

Council of Science Editors:

Losego MD. Interfacing Epitaxial Oxides to Gallium Nitride. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3747


North Carolina State University

12. Yin, Hong. A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs.

Degree: PhD, Electrical Engineering, 2008, North Carolina State University

Subjects/Keywords: model GaN HFET large-signal

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APA (6th Edition):

Yin, H. (2008). A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4578

Chicago Manual of Style (16th Edition):

Yin, Hong. “A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs.” 2008. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4578.

MLA Handbook (7th Edition):

Yin, Hong. “A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs.” 2008. Web. 06 Aug 2020.

Vancouver:

Yin H. A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4578.

Council of Science Editors:

Yin H. A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4578


North Carolina State University

13. Wellenius, Ian Patrick. Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

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APA (6th Edition):

Wellenius, I. P. (2009). Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/6595

Chicago Manual of Style (16th Edition):

Wellenius, Ian Patrick. “Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices.” 2009. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/6595.

MLA Handbook (7th Edition):

Wellenius, Ian Patrick. “Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices.” 2009. Web. 06 Aug 2020.

Vancouver:

Wellenius IP. Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6595.

Council of Science Editors:

Wellenius IP. Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6595


North Carolina State University

14. Sonkusale, Sachin Ramrao. Planar Edge Defined Alternate Layer Process (PEDAL) - An Unconventional Technique for Fabricatinon of Wafer Scale Sub-25 nm Nanowires and Nanowire Template.

Degree: PhD, Electrical Engineering, 2006, North Carolina State University

 As defined by the US national science foundation, "nanofabrication is the process of making functional structures with arbitrary patterns having minimum dimensions less than 100… (more)

Subjects/Keywords: template; nanoimprinting; nanowires; PEDAL; palladium

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APA (6th Edition):

Sonkusale, S. R. (2006). Planar Edge Defined Alternate Layer Process (PEDAL) - An Unconventional Technique for Fabricatinon of Wafer Scale Sub-25 nm Nanowires and Nanowire Template. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3831

Chicago Manual of Style (16th Edition):

Sonkusale, Sachin Ramrao. “Planar Edge Defined Alternate Layer Process (PEDAL) - An Unconventional Technique for Fabricatinon of Wafer Scale Sub-25 nm Nanowires and Nanowire Template.” 2006. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3831.

MLA Handbook (7th Edition):

Sonkusale, Sachin Ramrao. “Planar Edge Defined Alternate Layer Process (PEDAL) - An Unconventional Technique for Fabricatinon of Wafer Scale Sub-25 nm Nanowires and Nanowire Template.” 2006. Web. 06 Aug 2020.

Vancouver:

Sonkusale SR. Planar Edge Defined Alternate Layer Process (PEDAL) - An Unconventional Technique for Fabricatinon of Wafer Scale Sub-25 nm Nanowires and Nanowire Template. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3831.

Council of Science Editors:

Sonkusale SR. Planar Edge Defined Alternate Layer Process (PEDAL) - An Unconventional Technique for Fabricatinon of Wafer Scale Sub-25 nm Nanowires and Nanowire Template. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3831


North Carolina State University

15. Jin, Yawei. Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device.

Degree: PhD, Electrical Engineering, 2007, North Carolina State University

Subjects/Keywords: double gate MOSFET; FinFET; Gallium Nitride; TCAD simulation; Indium Antimonide; ultra-thin body; Tri-gate

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APA (6th Edition):

Jin, Y. (2007). Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4053

Chicago Manual of Style (16th Edition):

Jin, Yawei. “Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device.” 2007. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4053.

MLA Handbook (7th Edition):

Jin, Yawei. “Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device.” 2007. Web. 06 Aug 2020.

Vancouver:

Jin Y. Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4053.

Council of Science Editors:

Jin Y. Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4053


North Carolina State University

16. Jur, Jesse Stephen. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.

Degree: PhD, Materials Science and Engineering, 2007, North Carolina State University

 The ability to improve performance of the high-end metal oxide semiconductor field effect transistor (MOSFET) is highly reliant on the dimensional scaling of such a… (more)

Subjects/Keywords: dc magnetron sputtering; physical vapor deposition; tungsten oxide; tungsten; W; tantalum nitride; TaN; lanthanum; lanthanum oxide; La; La2O3; La2SiO5; lanthanum silicate; La2Si2O7; Ho; holmium; holmium oxide; cation diffusion; back-side SIMS; secondary ion mass spectroscopy; SIMS; XRD; x-ray diffraction; molecular beam deposition; PMA; XPS; x-ray photoemission spectroscopy; post metallization anneal; RCA; chemical oxide; metal oxide semiconductor field effect transistor; MBE; silica; SiO2; interfacial layer; gate dielectric; dielectric; silicate; oxide; high-kappa; EOT; equivalent oxide thickness; high-k; band diagram; valance band offset; conduction band offset; band gap energy; effective work function; work function; voltage shift; threshold voltage; flat band voltage; leakage current; capacitance; mobility; electronic materials; scaling; Moore?s Law; MIS; MOS; MOSFET; high resolution transmission electron microscopy; HRTEM; RTA; rapid thermal anneal; PVD; tantalum; Ta; gate electrode; metal electrode; hafnium silicate; hafnium oxide; hafnium; ytterbium; ytterbium oxide; Yb; dysprosium oxide; dysprosium; Dy; E-beam evaporation; thermal evaporation; forming gas anneal; ozone; ammonia anneal; FGA

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APA (6th Edition):

Jur, J. S. (2007). Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5447

Chicago Manual of Style (16th Edition):

Jur, Jesse Stephen. “Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.” 2007. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5447.

MLA Handbook (7th Edition):

Jur, Jesse Stephen. “Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.” 2007. Web. 06 Aug 2020.

Vancouver:

Jur JS. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5447.

Council of Science Editors:

Jur JS. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5447


North Carolina State University

17. Arkun, Fevzi Erdem. Study of Mn Doped GaN for Spintronic Applications.

Degree: PhD, Materials Science and Engineering, 2006, North Carolina State University

 Spintronics is an emerging field in which the spin of carriers in addition to the charge of carriers can be used to achieve new functionalities… (more)

Subjects/Keywords: GaMnN; InGaN; GaN; LED; spintronics; materials science; Optoelectronics

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APA (6th Edition):

Arkun, F. E. (2006). Study of Mn Doped GaN for Spintronic Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4607

Chicago Manual of Style (16th Edition):

Arkun, Fevzi Erdem. “Study of Mn Doped GaN for Spintronic Applications.” 2006. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4607.

MLA Handbook (7th Edition):

Arkun, Fevzi Erdem. “Study of Mn Doped GaN for Spintronic Applications.” 2006. Web. 06 Aug 2020.

Vancouver:

Arkun FE. Study of Mn Doped GaN for Spintronic Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4607.

Council of Science Editors:

Arkun FE. Study of Mn Doped GaN for Spintronic Applications. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4607


North Carolina State University

18. Zeng, Chang. GaN MOSFETs for Low Power Giga Scale LSI Logic.

Degree: PhD, Electrical Engineering, 2007, North Carolina State University

 Advances in material quality and device processing have led to promising results for III-nitride electronic devices for high frequency applications. Numerous groups have report that… (more)

Subjects/Keywords: MESFET; GaN; MOSFET

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APA (6th Edition):

Zeng, C. (2007). GaN MOSFETs for Low Power Giga Scale LSI Logic. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3621

Chicago Manual of Style (16th Edition):

Zeng, Chang. “GaN MOSFETs for Low Power Giga Scale LSI Logic.” 2007. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3621.

MLA Handbook (7th Edition):

Zeng, Chang. “GaN MOSFETs for Low Power Giga Scale LSI Logic.” 2007. Web. 06 Aug 2020.

Vancouver:

Zeng C. GaN MOSFETs for Low Power Giga Scale LSI Logic. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3621.

Council of Science Editors:

Zeng C. GaN MOSFETs for Low Power Giga Scale LSI Logic. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3621


North Carolina State University

19. Dandu, Krishnanshu. Characterization and Modeling of III-N MOS-HFETs for High Frequency Applications.

Degree: PhD, Electrical Engineering, 2006, North Carolina State University

 This research focuses on the characterization and modeling of AlGaN⁄InGaN MOS-HFETs. DC and small signal S parameter measurements were used to characterize these FETs and… (more)

Subjects/Keywords: Self-heating; Quantum well; Space charge; Thermal resistance

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APA (6th Edition):

Dandu, K. (2006). Characterization and Modeling of III-N MOS-HFETs for High Frequency Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5604

Chicago Manual of Style (16th Edition):

Dandu, Krishnanshu. “Characterization and Modeling of III-N MOS-HFETs for High Frequency Applications.” 2006. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5604.

MLA Handbook (7th Edition):

Dandu, Krishnanshu. “Characterization and Modeling of III-N MOS-HFETs for High Frequency Applications.” 2006. Web. 06 Aug 2020.

Vancouver:

Dandu K. Characterization and Modeling of III-N MOS-HFETs for High Frequency Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5604.

Council of Science Editors:

Dandu K. Characterization and Modeling of III-N MOS-HFETs for High Frequency Applications. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5604


North Carolina State University

20. Suri, Rahul. Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.

Degree: PhD, Electrical Engineering, 2010, North Carolina State University

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APA (6th Edition):

Suri, R. (2010). Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/6639

Chicago Manual of Style (16th Edition):

Suri, Rahul. “Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.” 2010. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/6639.

MLA Handbook (7th Edition):

Suri, Rahul. “Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.” 2010. Web. 06 Aug 2020.

Vancouver:

Suri R. Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors. [Internet] [Doctoral dissertation]. North Carolina State University; 2010. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6639.

Council of Science Editors:

Suri R. Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors. [Doctoral Dissertation]. North Carolina State University; 2010. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6639


North Carolina State University

21. Park, Ji-Soo. Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 AlGaN-based thin film heterostructures have been grown and fabricated into ultraviolet light emitting diodes with and without p-type and/or n-type AlGaN carrier-blocking layers at the… (more)

Subjects/Keywords: SiC; MOVPE; GaN; AlGaN; UV LEDs

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APA (6th Edition):

Park, J. (2005). Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4120

Chicago Manual of Style (16th Edition):

Park, Ji-Soo. “Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes.” 2005. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4120.

MLA Handbook (7th Edition):

Park, Ji-Soo. “Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes.” 2005. Web. 06 Aug 2020.

Vancouver:

Park J. Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4120.

Council of Science Editors:

Park J. Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4120


North Carolina State University

22. Al-Ajmi, Fahed Shammakh. Stimulated Emission and Laser Action from Gallium Nitride, Aluminium Gallium Nitride, Aluminium Gallium Nitride⁄Gallium NitrideQuantum Wells and Heterostructures.

Degree: PhD, Electrical Engineering, 2007, North Carolina State University

 Stimulated emission and laser action at 77K and room temperature from GaN and AlGaN epilayers grown by metal-organic vapor chemical deposition on silicon substrates are… (more)

Subjects/Keywords: Stimulated emission; Phonon-assisted stimulated emission; Quantum well; Heterostructures; AlGaN/GaN; Laser action

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APA (6th Edition):

Al-Ajmi, F. S. (2007). Stimulated Emission and Laser Action from Gallium Nitride, Aluminium Gallium Nitride, Aluminium Gallium Nitride⁄Gallium NitrideQuantum Wells and Heterostructures. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3202

Chicago Manual of Style (16th Edition):

Al-Ajmi, Fahed Shammakh. “Stimulated Emission and Laser Action from Gallium Nitride, Aluminium Gallium Nitride, Aluminium Gallium Nitride⁄Gallium NitrideQuantum Wells and Heterostructures.” 2007. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3202.

MLA Handbook (7th Edition):

Al-Ajmi, Fahed Shammakh. “Stimulated Emission and Laser Action from Gallium Nitride, Aluminium Gallium Nitride, Aluminium Gallium Nitride⁄Gallium NitrideQuantum Wells and Heterostructures.” 2007. Web. 06 Aug 2020.

Vancouver:

Al-Ajmi FS. Stimulated Emission and Laser Action from Gallium Nitride, Aluminium Gallium Nitride, Aluminium Gallium Nitride⁄Gallium NitrideQuantum Wells and Heterostructures. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3202.

Council of Science Editors:

Al-Ajmi FS. Stimulated Emission and Laser Action from Gallium Nitride, Aluminium Gallium Nitride, Aluminium Gallium Nitride⁄Gallium NitrideQuantum Wells and Heterostructures. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3202


North Carolina State University

23. Behbehani, Mark Kian. Study of Phase Separation and Ordering in InGaN and AlInGaN: Experimental and Computer Modeling.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 A comprehensive study examines the phase behaviour of InGaN and AlInGaN including growth characterization and computer modeling. InGaN alloys were grown with up to 50%… (more)

Subjects/Keywords: MOCVD; AlInGaN; InGaN; VFF; Computer Modeling; Monte Carlo; Strain

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APA (6th Edition):

Behbehani, M. K. (2005). Study of Phase Separation and Ordering in InGaN and AlInGaN: Experimental and Computer Modeling. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4731

Chicago Manual of Style (16th Edition):

Behbehani, Mark Kian. “Study of Phase Separation and Ordering in InGaN and AlInGaN: Experimental and Computer Modeling.” 2005. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4731.

MLA Handbook (7th Edition):

Behbehani, Mark Kian. “Study of Phase Separation and Ordering in InGaN and AlInGaN: Experimental and Computer Modeling.” 2005. Web. 06 Aug 2020.

Vancouver:

Behbehani MK. Study of Phase Separation and Ordering in InGaN and AlInGaN: Experimental and Computer Modeling. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4731.

Council of Science Editors:

Behbehani MK. Study of Phase Separation and Ordering in InGaN and AlInGaN: Experimental and Computer Modeling. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4731


North Carolina State University

24. Chen, Bei. Metal alloys and Gate Stack Engineering for CMOS Gate Electrode Application.

Degree: PhD, Electrical Engineering, 2006, North Carolina State University

 The purpose of this research has been to search for proper metallic gate electrodes for CMOS devices. This dissertation covers several binary alloy metal gate… (more)

Subjects/Keywords: Metal Gate; CMOS; Alloy

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APA (6th Edition):

Chen, B. (2006). Metal alloys and Gate Stack Engineering for CMOS Gate Electrode Application. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5822

Chicago Manual of Style (16th Edition):

Chen, Bei. “Metal alloys and Gate Stack Engineering for CMOS Gate Electrode Application.” 2006. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5822.

MLA Handbook (7th Edition):

Chen, Bei. “Metal alloys and Gate Stack Engineering for CMOS Gate Electrode Application.” 2006. Web. 06 Aug 2020.

Vancouver:

Chen B. Metal alloys and Gate Stack Engineering for CMOS Gate Electrode Application. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5822.

Council of Science Editors:

Chen B. Metal alloys and Gate Stack Engineering for CMOS Gate Electrode Application. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5822


North Carolina State University

25. Li, Minsheng. Nonlinear Behavioral Modeling of Quadrature Modulators and Analysis of Impacts on Wireless Communication Systems.

Degree: PhD, Electrical Engineering, 2008, North Carolina State University

Subjects/Keywords: quadrature modulators; DC offset; nonlinear behavioral modeling; AM-PM; nonlinear distortions; gain/phase imbalance; ACPR; EVM; AM-AM

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APA (6th Edition):

Li, M. (2008). Nonlinear Behavioral Modeling of Quadrature Modulators and Analysis of Impacts on Wireless Communication Systems. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5936

Chicago Manual of Style (16th Edition):

Li, Minsheng. “Nonlinear Behavioral Modeling of Quadrature Modulators and Analysis of Impacts on Wireless Communication Systems.” 2008. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5936.

MLA Handbook (7th Edition):

Li, Minsheng. “Nonlinear Behavioral Modeling of Quadrature Modulators and Analysis of Impacts on Wireless Communication Systems.” 2008. Web. 06 Aug 2020.

Vancouver:

Li M. Nonlinear Behavioral Modeling of Quadrature Modulators and Analysis of Impacts on Wireless Communication Systems. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5936.

Council of Science Editors:

Li M. Nonlinear Behavioral Modeling of Quadrature Modulators and Analysis of Impacts on Wireless Communication Systems. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5936


North Carolina State University

26. Reitmeier, Zachary J. The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 The present research was undertaken with the goals of understanding the evolution of defects and strain in heteroepitaxial AlN and GaN films deposited via metalorganic… (more)

Subjects/Keywords: hydrogen etching; cantilever epitaxy; lateral overgrowth; AlN; MOVPE; heteroepitaxy; threading dislocations; GaN

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APA (6th Edition):

Reitmeier, Z. J. (2005). The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4541

Chicago Manual of Style (16th Edition):

Reitmeier, Zachary J. “The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy.” 2005. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4541.

MLA Handbook (7th Edition):

Reitmeier, Zachary J. “The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy.” 2005. Web. 06 Aug 2020.

Vancouver:

Reitmeier ZJ. The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4541.

Council of Science Editors:

Reitmeier ZJ. The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4541


North Carolina State University

27. Berkman, Erkan Acar. Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices.

Degree: PhD, Materials Science and Engineering, 2008, North Carolina State University

 In this study, heteroepitaxial growth of III-Nitrides was performed by metalorganic chemical vapor deposition (MOCVD) technique on (0001) Al2O3 substrates to develop GaN and InxGa1-xN… (more)

Subjects/Keywords: InGaN; GaN; MOCVD; LED; Photodiode; Wide Bandgap

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APA (6th Edition):

Berkman, E. A. (2008). Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3737

Chicago Manual of Style (16th Edition):

Berkman, Erkan Acar. “Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices.” 2008. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3737.

MLA Handbook (7th Edition):

Berkman, Erkan Acar. “Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices.” 2008. Web. 06 Aug 2020.

Vancouver:

Berkman EA. Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3737.

Council of Science Editors:

Berkman EA. Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3737


North Carolina State University

28. Oberhofer, Andrew Edward. Gallium Nitride Ultraviolet Optical Modulators.

Degree: PhD, Electrical Engineering, 2005, North Carolina State University

 In narrower band gap semiconductors researchers have exploited the ability to manipulate the exciton resonance via the Quantum Confined Stark Effect to make a variety… (more)

Subjects/Keywords: ultraviolet; Gallium Nitride; electroabsorption; modulator

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APA (6th Edition):

Oberhofer, A. E. (2005). Gallium Nitride Ultraviolet Optical Modulators. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3607

Chicago Manual of Style (16th Edition):

Oberhofer, Andrew Edward. “Gallium Nitride Ultraviolet Optical Modulators.” 2005. Doctoral Dissertation, North Carolina State University. Accessed August 06, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3607.

MLA Handbook (7th Edition):

Oberhofer, Andrew Edward. “Gallium Nitride Ultraviolet Optical Modulators.” 2005. Web. 06 Aug 2020.

Vancouver:

Oberhofer AE. Gallium Nitride Ultraviolet Optical Modulators. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Aug 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3607.

Council of Science Editors:

Oberhofer AE. Gallium Nitride Ultraviolet Optical Modulators. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3607

.