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You searched for +publisher:"North Carolina State University" +contributor:("Gregory N. Parsons, Committee Chair"). Showing records 1 – 10 of 10 total matches.

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North Carolina State University

1. Na, Jeong-Seok. Nanoscale Assembly for Molecular Electronics and In Situ Characterization during Atomic Layer Deposition.

Degree: PhD, Chemical Engineering, 2009, North Carolina State University

 The work in this dissertation consists of a two-part study concerning molecular-based electronics and atomic layer deposition (ALD). As conventional “top-down†silicon-based technology approaches its… (more)

Subjects/Keywords: atomic layer deposition; nanoparticle; assembly; Zinc oxide; molecular electronics; in situ analysis

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APA (6th Edition):

Na, J. (2009). Nanoscale Assembly for Molecular Electronics and In Situ Characterization during Atomic Layer Deposition. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4164

Chicago Manual of Style (16th Edition):

Na, Jeong-Seok. “Nanoscale Assembly for Molecular Electronics and In Situ Characterization during Atomic Layer Deposition.” 2009. Doctoral Dissertation, North Carolina State University. Accessed January 25, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4164.

MLA Handbook (7th Edition):

Na, Jeong-Seok. “Nanoscale Assembly for Molecular Electronics and In Situ Characterization during Atomic Layer Deposition.” 2009. Web. 25 Jan 2020.

Vancouver:

Na J. Nanoscale Assembly for Molecular Electronics and In Situ Characterization during Atomic Layer Deposition. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2020 Jan 25]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4164.

Council of Science Editors:

Na J. Nanoscale Assembly for Molecular Electronics and In Situ Characterization during Atomic Layer Deposition. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4164


North Carolina State University

2. Peng, Qing. Nanoscale Engineering Materials with Supercritical Fluid and Atomic Layer Deposition.

Degree: PhD, Chemical Engineering, 2009, North Carolina State University

 With the development of material science and technology, modification of substrates, which have random geometry and high aspect ratio three dimensional (3D) complex structures, with… (more)

Subjects/Keywords: supercritical carbon dioxide; thin film; atomic layer deposition; molecular layer deposition; three dimensional; complex structure

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APA (6th Edition):

Peng, Q. (2009). Nanoscale Engineering Materials with Supercritical Fluid and Atomic Layer Deposition. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3550

Chicago Manual of Style (16th Edition):

Peng, Qing. “Nanoscale Engineering Materials with Supercritical Fluid and Atomic Layer Deposition.” 2009. Doctoral Dissertation, North Carolina State University. Accessed January 25, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3550.

MLA Handbook (7th Edition):

Peng, Qing. “Nanoscale Engineering Materials with Supercritical Fluid and Atomic Layer Deposition.” 2009. Web. 25 Jan 2020.

Vancouver:

Peng Q. Nanoscale Engineering Materials with Supercritical Fluid and Atomic Layer Deposition. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2020 Jan 25]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3550.

Council of Science Editors:

Peng Q. Nanoscale Engineering Materials with Supercritical Fluid and Atomic Layer Deposition. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3550


North Carolina State University

3. Terry, David B. Ultra High Vacuum Physical Vapor Deposition of Yttrium Aluminate and Hafnium Aluminate High-k Dielectrics on Silicon.

Degree: MS, Chemical Engineering, 2004, North Carolina State University

 Ultra high vacuum physical vapor deposition is used to deposit thin films of varying yttrium:aluminum and hafnium:aluminum concentrations on H-terminated silicon(100) and oxidized ex-situ at… (more)

Subjects/Keywords: High-k dielectrics; physical vapor deposition

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APA (6th Edition):

Terry, D. B. (2004). Ultra High Vacuum Physical Vapor Deposition of Yttrium Aluminate and Hafnium Aluminate High-k Dielectrics on Silicon. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/2854

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Terry, David B. “Ultra High Vacuum Physical Vapor Deposition of Yttrium Aluminate and Hafnium Aluminate High-k Dielectrics on Silicon.” 2004. Thesis, North Carolina State University. Accessed January 25, 2020. http://www.lib.ncsu.edu/resolver/1840.16/2854.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Terry, David B. “Ultra High Vacuum Physical Vapor Deposition of Yttrium Aluminate and Hafnium Aluminate High-k Dielectrics on Silicon.” 2004. Web. 25 Jan 2020.

Vancouver:

Terry DB. Ultra High Vacuum Physical Vapor Deposition of Yttrium Aluminate and Hafnium Aluminate High-k Dielectrics on Silicon. [Internet] [Thesis]. North Carolina State University; 2004. [cited 2020 Jan 25]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2854.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Terry DB. Ultra High Vacuum Physical Vapor Deposition of Yttrium Aluminate and Hafnium Aluminate High-k Dielectrics on Silicon. [Thesis]. North Carolina State University; 2004. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2854

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

4. Park, Kie Jin. The Atomic Layer Deposition of Noble Metals for Microelectronics Applications.

Degree: PhD, Chemical Engineering, 2006, North Carolina State University

 The purpose of this research has been to explore noble metals prepared using thermal atomic layer deposition (ALD) for gate electrode applications in CMOS technology.… (more)

Subjects/Keywords: thin film deposition; noble metals; Atomic layer deposition; metal gate

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APA (6th Edition):

Park, K. J. (2006). The Atomic Layer Deposition of Noble Metals for Microelectronics Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5309

Chicago Manual of Style (16th Edition):

Park, Kie Jin. “The Atomic Layer Deposition of Noble Metals for Microelectronics Applications.” 2006. Doctoral Dissertation, North Carolina State University. Accessed January 25, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5309.

MLA Handbook (7th Edition):

Park, Kie Jin. “The Atomic Layer Deposition of Noble Metals for Microelectronics Applications.” 2006. Web. 25 Jan 2020.

Vancouver:

Park KJ. The Atomic Layer Deposition of Noble Metals for Microelectronics Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2020 Jan 25]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5309.

Council of Science Editors:

Park KJ. The Atomic Layer Deposition of Noble Metals for Microelectronics Applications. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5309


North Carolina State University

5. Terry, David Bartholomew. A Holistic Investigation of Alternative Gate Stack Materials for Future CMOS Applications.

Degree: PhD, Chemical Engineering, 2007, North Carolina State University

 High dielectric constant (high-k) insulators metal gate electrodes are important for advanced MOS devices to limit gate leakage by increasing gate capacitance with ultimately thicker… (more)

Subjects/Keywords: Reaction mechanisms; Surface chemistry; Plasma deposition; gate metals; high-k dielectrics; XPS; CVD; ALD

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APA (6th Edition):

Terry, D. B. (2007). A Holistic Investigation of Alternative Gate Stack Materials for Future CMOS Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3482

Chicago Manual of Style (16th Edition):

Terry, David Bartholomew. “A Holistic Investigation of Alternative Gate Stack Materials for Future CMOS Applications.” 2007. Doctoral Dissertation, North Carolina State University. Accessed January 25, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3482.

MLA Handbook (7th Edition):

Terry, David Bartholomew. “A Holistic Investigation of Alternative Gate Stack Materials for Future CMOS Applications.” 2007. Web. 25 Jan 2020.

Vancouver:

Terry DB. A Holistic Investigation of Alternative Gate Stack Materials for Future CMOS Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2020 Jan 25]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3482.

Council of Science Editors:

Terry DB. A Holistic Investigation of Alternative Gate Stack Materials for Future CMOS Applications. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3482


North Carolina State University

6. Barua, Dipak. Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution.

Degree: MS, Chemical Engineering, 2005, North Carolina State University

 Thin films of metals and metal-oxides are deposited in batch (Chemical Fluid Deposition) and cyclic (Atomic Layer Deposition) processes from metal organic precursors in supercritical… (more)

Subjects/Keywords: CFD; Gate Metal; ALD; Sc CO2; Thin Film Deposition; High k Dielectric

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APA (6th Edition):

Barua, D. (2005). Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/628

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Barua, Dipak. “Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution.” 2005. Thesis, North Carolina State University. Accessed January 25, 2020. http://www.lib.ncsu.edu/resolver/1840.16/628.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Barua, Dipak. “Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution.” 2005. Web. 25 Jan 2020.

Vancouver:

Barua D. Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution. [Internet] [Thesis]. North Carolina State University; 2005. [cited 2020 Jan 25]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/628.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Barua D. Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution. [Thesis]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/628

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

7. Chu, Changwoong. Fabrication and Characterization of Electrical Contacts for Charge Transport Study in Molecular Electronics.

Degree: PhD, Chemical Engineering, 2006, North Carolina State University

 Nanoscale imprint lithography (NIL) is investigated in the view point of the ability to form nanoscale feature. NIL at room temperature is proposed and demonstrated… (more)

Subjects/Keywords: self-assembly monolayer; tunneling; molecular electronics; nanofabrication

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APA (6th Edition):

Chu, C. (2006). Fabrication and Characterization of Electrical Contacts for Charge Transport Study in Molecular Electronics. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5132

Chicago Manual of Style (16th Edition):

Chu, Changwoong. “Fabrication and Characterization of Electrical Contacts for Charge Transport Study in Molecular Electronics.” 2006. Doctoral Dissertation, North Carolina State University. Accessed January 25, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5132.

MLA Handbook (7th Edition):

Chu, Changwoong. “Fabrication and Characterization of Electrical Contacts for Charge Transport Study in Molecular Electronics.” 2006. Web. 25 Jan 2020.

Vancouver:

Chu C. Fabrication and Characterization of Electrical Contacts for Charge Transport Study in Molecular Electronics. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2020 Jan 25]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5132.

Council of Science Editors:

Chu C. Fabrication and Characterization of Electrical Contacts for Charge Transport Study in Molecular Electronics. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5132


North Carolina State University

8. Bray, Kevin R. Surface Mechanisms in Low-Temperature Plasma Deposition of Silicon.

Degree: PhD, Chemical Engineering, 2002, North Carolina State University

 Dynamic scaling of surface roughness evolution during plasma deposition of amorphous silicon is utilized to characterize surface transport mechanisms. Different surface transport mechanisms leave distinct… (more)

Subjects/Keywords: PECVD; thin film deposition; amorphous silicon; surface diffusion; atomic force microscopy; dynamic scaling

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APA (6th Edition):

Bray, K. R. (2002). Surface Mechanisms in Low-Temperature Plasma Deposition of Silicon. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4352

Chicago Manual of Style (16th Edition):

Bray, Kevin R. “Surface Mechanisms in Low-Temperature Plasma Deposition of Silicon.” 2002. Doctoral Dissertation, North Carolina State University. Accessed January 25, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4352.

MLA Handbook (7th Edition):

Bray, Kevin R. “Surface Mechanisms in Low-Temperature Plasma Deposition of Silicon.” 2002. Web. 25 Jan 2020.

Vancouver:

Bray KR. Surface Mechanisms in Low-Temperature Plasma Deposition of Silicon. [Internet] [Doctoral dissertation]. North Carolina State University; 2002. [cited 2020 Jan 25]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4352.

Council of Science Editors:

Bray KR. Surface Mechanisms in Low-Temperature Plasma Deposition of Silicon. [Doctoral Dissertation]. North Carolina State University; 2002. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4352


North Carolina State University

9. Kelly, Michael Jason. Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition.

Degree: PhD, Chemical Engineering, 2006, North Carolina State University

 According to the International Technology Roadmap for Semiconductors (2004) integrating a high dielectric constant (high-k) material into the gate stack will be necessary within the… (more)

Subjects/Keywords: deposition; thin film; gate metal; kinetics; ATR; gate electrode; capacitor; transistor; FTIR; MOSFET; infrared; spectroscopy; leakage current; reactions; electronic materials; electrical engineering

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APA (6th Edition):

Kelly, M. J. (2006). Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3988

Chicago Manual of Style (16th Edition):

Kelly, Michael Jason. “Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition.” 2006. Doctoral Dissertation, North Carolina State University. Accessed January 25, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3988.

MLA Handbook (7th Edition):

Kelly, Michael Jason. “Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition.” 2006. Web. 25 Jan 2020.

Vancouver:

Kelly MJ. Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2020 Jan 25]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3988.

Council of Science Editors:

Kelly MJ. Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3988


North Carolina State University

10. Niu, Dong. Interface reactions during processing of chemical vapor deposited yttrium oxide high-k dielectrics.

Degree: PhD, Chemical Engineering, 2002, North Carolina State University

 High dielectric constant (high-k) insulators are important for advanced MOS devices to limit gate leakage and increase gate capacitance. Reactions between high-k's and the substrate… (more)

Subjects/Keywords: Interface reaction mechanisms; High-k gate dielectrics; CVD; Yttrium Oxide

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APA (6th Edition):

Niu, D. (2002). Interface reactions during processing of chemical vapor deposited yttrium oxide high-k dielectrics. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5797

Chicago Manual of Style (16th Edition):

Niu, Dong. “Interface reactions during processing of chemical vapor deposited yttrium oxide high-k dielectrics.” 2002. Doctoral Dissertation, North Carolina State University. Accessed January 25, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5797.

MLA Handbook (7th Edition):

Niu, Dong. “Interface reactions during processing of chemical vapor deposited yttrium oxide high-k dielectrics.” 2002. Web. 25 Jan 2020.

Vancouver:

Niu D. Interface reactions during processing of chemical vapor deposited yttrium oxide high-k dielectrics. [Internet] [Doctoral dissertation]. North Carolina State University; 2002. [cited 2020 Jan 25]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5797.

Council of Science Editors:

Niu D. Interface reactions during processing of chemical vapor deposited yttrium oxide high-k dielectrics. [Doctoral Dissertation]. North Carolina State University; 2002. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5797

.