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You searched for +publisher:"North Carolina State University" +contributor:("Gerald Lucovsky, Committee Chair"). Showing records 1 – 5 of 5 total matches.

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North Carolina State University

1. Long, Joseph Preston. Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces.

Degree: PhD, Physics, 2008, North Carolina State University

 The research discussed here has been carried out in order to advance the basic understanding of the compatibility between germanium surfaces and hafnium-based high κ… (more)

Subjects/Keywords: high-k; germanium; hafnium oxide; CMOS; PECVD

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APA (6th Edition):

Long, J. P. (2008). Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3194

Chicago Manual of Style (16th Edition):

Long, Joseph Preston. “Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces.” 2008. Doctoral Dissertation, North Carolina State University. Accessed September 26, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3194.

MLA Handbook (7th Edition):

Long, Joseph Preston. “Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces.” 2008. Web. 26 Sep 2020.

Vancouver:

Long JP. Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2020 Sep 26]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3194.

Council of Science Editors:

Long JP. Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3194


North Carolina State University

2. Hong, Joon Goo. Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps.

Degree: PhD, Materials Science and Engineering, 2003, North Carolina State University

 Aggressive scaling of devices has continued to improve MOSFET transistor performance. As lateral device dimensions continue to decrease, gate oxide thickness must be scaled down.… (more)

Subjects/Keywords: RPE-CVD. MOCVD; local bond; FTIR; Poole-Frenkel; nitridation; temperature dependent CV; IV; CV; electrical property; transition metal oxide; Optical Band Gap; Valence band; Conduction band; Hafnium Silicate; Spectroscopy; High k gate oxide

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APA (6th Edition):

Hong, J. G. (2003). Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/2978

Chicago Manual of Style (16th Edition):

Hong, Joon Goo. “Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps.” 2003. Doctoral Dissertation, North Carolina State University. Accessed September 26, 2020. http://www.lib.ncsu.edu/resolver/1840.16/2978.

MLA Handbook (7th Edition):

Hong, Joon Goo. “Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps.” 2003. Web. 26 Sep 2020.

Vancouver:

Hong JG. Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps. [Internet] [Doctoral dissertation]. North Carolina State University; 2003. [cited 2020 Sep 26]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2978.

Council of Science Editors:

Hong JG. Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps. [Doctoral Dissertation]. North Carolina State University; 2003. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2978


North Carolina State University

3. Hinkle, Christopher. Fixed Charge Reduction and Tunneling in Stacked Dielectrics.

Degree: PhD, Physics, 2005, North Carolina State University

 Stacked gate dielectrics using high-k materials were deposited using a RPECVD method. Aluminum oxide, hafnium oxide, hafnium silicate, nitrided films of each of the above,… (more)

Subjects/Keywords: aluminum oxide; stacked dielectrics; hafnium oxide; high-k; fixed charge; tunneling

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APA (6th Edition):

Hinkle, C. (2005). Fixed Charge Reduction and Tunneling in Stacked Dielectrics. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5623

Chicago Manual of Style (16th Edition):

Hinkle, Christopher. “Fixed Charge Reduction and Tunneling in Stacked Dielectrics.” 2005. Doctoral Dissertation, North Carolina State University. Accessed September 26, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5623.

MLA Handbook (7th Edition):

Hinkle, Christopher. “Fixed Charge Reduction and Tunneling in Stacked Dielectrics.” 2005. Web. 26 Sep 2020.

Vancouver:

Hinkle C. Fixed Charge Reduction and Tunneling in Stacked Dielectrics. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Sep 26]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5623.

Council of Science Editors:

Hinkle C. Fixed Charge Reduction and Tunneling in Stacked Dielectrics. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5623


North Carolina State University

4. Zhang, Yu. Ab Initio Electronic Structure Calculations For High-K Dielectrics.

Degree: PhD, Physics, 2005, North Carolina State University

 In current semiconductor industry, continuing improvement in the performance of MOSFET requires aggressive scaling down of the dimensions of CMOS devices. A better capacitance/unit area… (more)

Subjects/Keywords: ab initio calculation; high-k dielectrics

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APA (6th Edition):

Zhang, Y. (2005). Ab Initio Electronic Structure Calculations For High-K Dielectrics. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5653

Chicago Manual of Style (16th Edition):

Zhang, Yu. “Ab Initio Electronic Structure Calculations For High-K Dielectrics.” 2005. Doctoral Dissertation, North Carolina State University. Accessed September 26, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5653.

MLA Handbook (7th Edition):

Zhang, Yu. “Ab Initio Electronic Structure Calculations For High-K Dielectrics.” 2005. Web. 26 Sep 2020.

Vancouver:

Zhang Y. Ab Initio Electronic Structure Calculations For High-K Dielectrics. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Sep 26]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5653.

Council of Science Editors:

Zhang Y. Ab Initio Electronic Structure Calculations For High-K Dielectrics. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5653


North Carolina State University

5. Ju, Byongsun. Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase… (more)

Subjects/Keywords: High-k; pseudo-binary(ternary); Gate dielectric

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APA (6th Edition):

Ju, B. (2005). Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5469

Chicago Manual of Style (16th Edition):

Ju, Byongsun. “Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations.” 2005. Doctoral Dissertation, North Carolina State University. Accessed September 26, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5469.

MLA Handbook (7th Edition):

Ju, Byongsun. “Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations.” 2005. Web. 26 Sep 2020.

Vancouver:

Ju B. Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Sep 26]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5469.

Council of Science Editors:

Ju B. Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5469

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