Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for +publisher:"North Carolina State University" +contributor:("Dr. Veena Misra, Committee Chair"). Showing records 1 – 6 of 6 total matches.

Search Limiters

Last 2 Years | English Only

No search limiters apply to these results.

▼ Search Limiters


North Carolina State University

1. Du, Yan. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

 SiGe source/drain technology has been sucessfully applied to bulk metal oxide semiconductor field effect transistors (MOSFETs). Both channel mobility and source/drain contact resistivity are substantially… (more)

Subjects/Keywords: nanowire; SiGe; Pt ALD; strain; CBED

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Du, Y. (2009). Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3433

Chicago Manual of Style (16th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Doctoral Dissertation, North Carolina State University. Accessed January 19, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3433.

MLA Handbook (7th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Web. 19 Jan 2020.

Vancouver:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2020 Jan 19]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433.

Council of Science Editors:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433


North Carolina State University

2. Lee, Bongmook. A Study of Group III Elements (La, Gd, Eu, and Al) Incorporation on Metal Gate / High–k Stacks for Advanced CMOS Applications.

Degree: PhD, Electrical Engineering, 2010, North Carolina State University

 The goal of this research is to evaluate the effect of group III elements incorporation into advanced metal gate / high–k dielectric stacks to achieve… (more)

Subjects/Keywords: gate stack; reliability; advanced CMOS; high-k; metal gate; Vt tuning; work function

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lee, B. (2010). A Study of Group III Elements (La, Gd, Eu, and Al) Incorporation on Metal Gate / High–k Stacks for Advanced CMOS Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/6186

Chicago Manual of Style (16th Edition):

Lee, Bongmook. “A Study of Group III Elements (La, Gd, Eu, and Al) Incorporation on Metal Gate / High–k Stacks for Advanced CMOS Applications.” 2010. Doctoral Dissertation, North Carolina State University. Accessed January 19, 2020. http://www.lib.ncsu.edu/resolver/1840.16/6186.

MLA Handbook (7th Edition):

Lee, Bongmook. “A Study of Group III Elements (La, Gd, Eu, and Al) Incorporation on Metal Gate / High–k Stacks for Advanced CMOS Applications.” 2010. Web. 19 Jan 2020.

Vancouver:

Lee B. A Study of Group III Elements (La, Gd, Eu, and Al) Incorporation on Metal Gate / High–k Stacks for Advanced CMOS Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2010. [cited 2020 Jan 19]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6186.

Council of Science Editors:

Lee B. A Study of Group III Elements (La, Gd, Eu, and Al) Incorporation on Metal Gate / High–k Stacks for Advanced CMOS Applications. [Doctoral Dissertation]. North Carolina State University; 2010. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6186


North Carolina State University

3. Suri, Rahul. Device Design of Sub-100nm Fully-depleted Silicon-on-Insulator (SOI) Devices Based on High-k Epitaxial-Buried Oxide.

Degree: MS, Electrical Engineering, 2007, North Carolina State University

 The Integrated Circuit industry is driven by the continuously shrinking feature size of devices. The era of planar bulk MOS transistor, however, is nearing its… (more)

Subjects/Keywords: Buried Oxide; Strained Silicon; SOI

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Suri, R. (2007). Device Design of Sub-100nm Fully-depleted Silicon-on-Insulator (SOI) Devices Based on High-k Epitaxial-Buried Oxide. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/1705

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Suri, Rahul. “Device Design of Sub-100nm Fully-depleted Silicon-on-Insulator (SOI) Devices Based on High-k Epitaxial-Buried Oxide.” 2007. Thesis, North Carolina State University. Accessed January 19, 2020. http://www.lib.ncsu.edu/resolver/1840.16/1705.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Suri, Rahul. “Device Design of Sub-100nm Fully-depleted Silicon-on-Insulator (SOI) Devices Based on High-k Epitaxial-Buried Oxide.” 2007. Web. 19 Jan 2020.

Vancouver:

Suri R. Device Design of Sub-100nm Fully-depleted Silicon-on-Insulator (SOI) Devices Based on High-k Epitaxial-Buried Oxide. [Internet] [Thesis]. North Carolina State University; 2007. [cited 2020 Jan 19]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/1705.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Suri R. Device Design of Sub-100nm Fully-depleted Silicon-on-Insulator (SOI) Devices Based on High-k Epitaxial-Buried Oxide. [Thesis]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/1705

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

4. Heuss, Gregory Paul. Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes.

Degree: PhD, Materials Science and Engineering, 2002, North Carolina State University

 Refractory metals and their nitrides are being considered as gate electrodes for scaled CMOS devices. The advantages of metal gates over doped polysilicon include the… (more)

Subjects/Keywords: metal gate electrode; tantalum nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Heuss, G. P. (2002). Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4281

Chicago Manual of Style (16th Edition):

Heuss, Gregory Paul. “Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes.” 2002. Doctoral Dissertation, North Carolina State University. Accessed January 19, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4281.

MLA Handbook (7th Edition):

Heuss, Gregory Paul. “Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes.” 2002. Web. 19 Jan 2020.

Vancouver:

Heuss GP. Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes. [Internet] [Doctoral dissertation]. North Carolina State University; 2002. [cited 2020 Jan 19]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4281.

Council of Science Editors:

Heuss GP. Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes. [Doctoral Dissertation]. North Carolina State University; 2002. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4281


North Carolina State University

5. Lazar, Heather Rebecca. Mobility Degradation of Advanced CMOS Devices.

Degree: PhD, Electrical Engineering, 2005, North Carolina State University

 As alternative materials are being pursued for CMOS gate dielectric scaling to below 1 nm, challenges arise that warrant investigation for greater understanding. Mobility values,… (more)

Subjects/Keywords: MOSFET; high k dielectrics; metal gate electrodes; bulk trapping; interface traps; interfaces; charge pumping; mobility

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lazar, H. R. (2005). Mobility Degradation of Advanced CMOS Devices. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4313

Chicago Manual of Style (16th Edition):

Lazar, Heather Rebecca. “Mobility Degradation of Advanced CMOS Devices.” 2005. Doctoral Dissertation, North Carolina State University. Accessed January 19, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4313.

MLA Handbook (7th Edition):

Lazar, Heather Rebecca. “Mobility Degradation of Advanced CMOS Devices.” 2005. Web. 19 Jan 2020.

Vancouver:

Lazar HR. Mobility Degradation of Advanced CMOS Devices. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Jan 19]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4313.

Council of Science Editors:

Lazar HR. Mobility Degradation of Advanced CMOS Devices. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4313


North Carolina State University

6. Suh, YouSeok. Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS.

Degree: PhD, Electrical Engineering, 2004, North Carolina State University

 This dissertation has focused on fabrication and characterization of alternative gate stacks consisting of high-K dielectrics and metal gates. This work has presented the evaluation… (more)

Subjects/Keywords: METAL GATE; HIGH-K DIELECTRICS; MOSFET DEVICE

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Suh, Y. (2004). Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4960

Chicago Manual of Style (16th Edition):

Suh, YouSeok. “Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS.” 2004. Doctoral Dissertation, North Carolina State University. Accessed January 19, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4960.

MLA Handbook (7th Edition):

Suh, YouSeok. “Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS.” 2004. Web. 19 Jan 2020.

Vancouver:

Suh Y. Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS. [Internet] [Doctoral dissertation]. North Carolina State University; 2004. [cited 2020 Jan 19]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4960.

Council of Science Editors:

Suh Y. Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS. [Doctoral Dissertation]. North Carolina State University; 2004. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4960

.