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You searched for +publisher:"North Carolina State University" +contributor:("Dr. Gerd Duscher, Committee Member"). Showing records 1 – 6 of 6 total matches.

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North Carolina State University

1. Du, Yan. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

 SiGe source/drain technology has been sucessfully applied to bulk metal oxide semiconductor field effect transistors (MOSFETs). Both channel mobility and source/drain contact resistivity are substantially… (more)

Subjects/Keywords: nanowire; SiGe; Pt ALD; strain; CBED

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Du, Y. (2009). Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3433

Chicago Manual of Style (16th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Doctoral Dissertation, North Carolina State University. Accessed February 24, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3433.

MLA Handbook (7th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Web. 24 Feb 2020.

Vancouver:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2020 Feb 24]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433.

Council of Science Editors:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433


North Carolina State University

2. Peters, Jeremy Kelvin. Intragrain Defect Characterization Of Solar Grade Silicon Using Near-Field Scanning Optical Microscopy.

Degree: MS, Materials Science and Engineering, 2006, North Carolina State University

 Multicrystalline silicon (mc-Si) is a material used in the photovolatic (PV) industry because of its lower production cost in comparison to its single crystal or… (more)

Subjects/Keywords: scanning probe microscopy; dislocation arrays

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APA (6th Edition):

Peters, J. K. (2006). Intragrain Defect Characterization Of Solar Grade Silicon Using Near-Field Scanning Optical Microscopy. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/2861

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Peters, Jeremy Kelvin. “Intragrain Defect Characterization Of Solar Grade Silicon Using Near-Field Scanning Optical Microscopy.” 2006. Thesis, North Carolina State University. Accessed February 24, 2020. http://www.lib.ncsu.edu/resolver/1840.16/2861.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Peters, Jeremy Kelvin. “Intragrain Defect Characterization Of Solar Grade Silicon Using Near-Field Scanning Optical Microscopy.” 2006. Web. 24 Feb 2020.

Vancouver:

Peters JK. Intragrain Defect Characterization Of Solar Grade Silicon Using Near-Field Scanning Optical Microscopy. [Internet] [Thesis]. North Carolina State University; 2006. [cited 2020 Feb 24]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2861.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Peters JK. Intragrain Defect Characterization Of Solar Grade Silicon Using Near-Field Scanning Optical Microscopy. [Thesis]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2861

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

3. Bunker, Kristin Lee. Development and Application of Electron Beam Induced Current and Cathodoluminescence Analytical Techniques for Characterization of Gallium Nitride-based Devices.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 The focus of this research was the design, development, and implementation of Electron Beam Induced Current (EBIC) and Cathodoluminescence (CL) techniques on both a Scanning… (more)

Subjects/Keywords: STEM; indium gallium nitride; piezoelectric fields; EBIC; gallium nitride; light emitting diodes; analytical characterization techniques; cathodoluminescence; p-n junction location; minority carrier diffusion length; indium composition fluctuations; SEM

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APA (6th Edition):

Bunker, K. L. (2005). Development and Application of Electron Beam Induced Current and Cathodoluminescence Analytical Techniques for Characterization of Gallium Nitride-based Devices. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3413

Chicago Manual of Style (16th Edition):

Bunker, Kristin Lee. “Development and Application of Electron Beam Induced Current and Cathodoluminescence Analytical Techniques for Characterization of Gallium Nitride-based Devices.” 2005. Doctoral Dissertation, North Carolina State University. Accessed February 24, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3413.

MLA Handbook (7th Edition):

Bunker, Kristin Lee. “Development and Application of Electron Beam Induced Current and Cathodoluminescence Analytical Techniques for Characterization of Gallium Nitride-based Devices.” 2005. Web. 24 Feb 2020.

Vancouver:

Bunker KL. Development and Application of Electron Beam Induced Current and Cathodoluminescence Analytical Techniques for Characterization of Gallium Nitride-based Devices. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Feb 24]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3413.

Council of Science Editors:

Bunker KL. Development and Application of Electron Beam Induced Current and Cathodoluminescence Analytical Techniques for Characterization of Gallium Nitride-based Devices. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3413


North Carolina State University

4. Rawdanowicz, Thomas Adolph. Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon.

Degree: PhD, Materials Science and Engineering, 2006, North Carolina State University

 The principal goal of this research was the investigation and process development of epitaxial growth mechanisms for the direct depositions of heteroepitaxial GaN thin films… (more)

Subjects/Keywords: Silicon substrate; Si(111) heteroepitaxy; Laser MBE; GaN; AlN

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APA (6th Edition):

Rawdanowicz, T. A. (2006). Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5925

Chicago Manual of Style (16th Edition):

Rawdanowicz, Thomas Adolph. “Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon.” 2006. Doctoral Dissertation, North Carolina State University. Accessed February 24, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5925.

MLA Handbook (7th Edition):

Rawdanowicz, Thomas Adolph. “Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon.” 2006. Web. 24 Feb 2020.

Vancouver:

Rawdanowicz TA. Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2020 Feb 24]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5925.

Council of Science Editors:

Rawdanowicz TA. Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5925


North Carolina State University

5. Gupta, Abhishek. Diffusion Charateristics of Copper in Novel Metallic Films.

Degree: PhD, Materials Science and Engineering, 2003, North Carolina State University

 The goal of this work was to synthesize refractory materials like TiN, Ta and alloys of TiN-TaN in the form of thin films which are… (more)

Subjects/Keywords: Diffusion; Copper; Diffusion Barrier; Thin FIlms

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APA (6th Edition):

Gupta, A. (2003). Diffusion Charateristics of Copper in Novel Metallic Films. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5041

Chicago Manual of Style (16th Edition):

Gupta, Abhishek. “Diffusion Charateristics of Copper in Novel Metallic Films.” 2003. Doctoral Dissertation, North Carolina State University. Accessed February 24, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5041.

MLA Handbook (7th Edition):

Gupta, Abhishek. “Diffusion Charateristics of Copper in Novel Metallic Films.” 2003. Web. 24 Feb 2020.

Vancouver:

Gupta A. Diffusion Charateristics of Copper in Novel Metallic Films. [Internet] [Doctoral dissertation]. North Carolina State University; 2003. [cited 2020 Feb 24]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5041.

Council of Science Editors:

Gupta A. Diffusion Charateristics of Copper in Novel Metallic Films. [Doctoral Dissertation]. North Carolina State University; 2003. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5041


North Carolina State University

6. Saripalli, Yoganand Nrusimha. Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures.

Degree: PhD, Materials Science and Engineering, 2006, North Carolina State University

 The physical properties of GaN, high saturation velocity, high breakdown fields, high electron mobility, wide bandgap energy and high thermal conductivity, make it a promising… (more)

Subjects/Keywords: Selected Area Regrowth; Reactive Ion Etching; MOSFETs; MOCVD; Epitaxial Growth; Low Temperature Regrowth; HFETs; GaN; Ohmic Contacts; Enhancement Mode GaN MOSFET

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Saripalli, Y. N. (2006). Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5506

Chicago Manual of Style (16th Edition):

Saripalli, Yoganand Nrusimha. “Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures.” 2006. Doctoral Dissertation, North Carolina State University. Accessed February 24, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5506.

MLA Handbook (7th Edition):

Saripalli, Yoganand Nrusimha. “Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures.” 2006. Web. 24 Feb 2020.

Vancouver:

Saripalli YN. Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2020 Feb 24]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5506.

Council of Science Editors:

Saripalli YN. Growth, Characterization and Device Processing of GaN Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structures. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5506

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