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You searched for +publisher:"Nelson Mandela Metropolitan University" +contributor:("Botha, J R Prof"). Showing records 1 – 4 of 4 total matches.

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Nelson Mandela Metropolitan University

1. Talla, Kharouna. Development of MgZnO-grown MOCVD for UV Photonic applications.

Degree: PhD, Faculty of Science, 2011, Nelson Mandela Metropolitan University

 MgxZn1-xO has emerged as a material of great technological importance. Having a direct energy band gap that is tunable throughout much of the ultraviolet (UV)… (more)

Subjects/Keywords: Photoluminescence; Photonics; Zinc oxide

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APA (6th Edition):

Talla, K. (2011). Development of MgZnO-grown MOCVD for UV Photonic applications. (Doctoral Dissertation). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/d1012585

Chicago Manual of Style (16th Edition):

Talla, Kharouna. “Development of MgZnO-grown MOCVD for UV Photonic applications.” 2011. Doctoral Dissertation, Nelson Mandela Metropolitan University. Accessed December 05, 2019. http://hdl.handle.net/10948/d1012585.

MLA Handbook (7th Edition):

Talla, Kharouna. “Development of MgZnO-grown MOCVD for UV Photonic applications.” 2011. Web. 05 Dec 2019.

Vancouver:

Talla K. Development of MgZnO-grown MOCVD for UV Photonic applications. [Internet] [Doctoral dissertation]. Nelson Mandela Metropolitan University; 2011. [cited 2019 Dec 05]. Available from: http://hdl.handle.net/10948/d1012585.

Council of Science Editors:

Talla K. Development of MgZnO-grown MOCVD for UV Photonic applications. [Doctoral Dissertation]. Nelson Mandela Metropolitan University; 2011. Available from: http://hdl.handle.net/10948/d1012585


Nelson Mandela Metropolitan University

2. Shamba, Precious. MOCVD growth and electrical characterisation of InAs thin films.

Degree: MSc, Faculty of Science, 2007, Nelson Mandela Metropolitan University

 In this work, a systematic study relating the surface morphologies, electrical and structural properties of both doped and undoped InAs and InAsSb epitaxial films grown… (more)

Subjects/Keywords: Metal organic chemical vapor deposition

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APA (6th Edition):

Shamba, P. (2007). MOCVD growth and electrical characterisation of InAs thin films. (Masters Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/706

Chicago Manual of Style (16th Edition):

Shamba, Precious. “MOCVD growth and electrical characterisation of InAs thin films.” 2007. Masters Thesis, Nelson Mandela Metropolitan University. Accessed December 05, 2019. http://hdl.handle.net/10948/706.

MLA Handbook (7th Edition):

Shamba, Precious. “MOCVD growth and electrical characterisation of InAs thin films.” 2007. Web. 05 Dec 2019.

Vancouver:

Shamba P. MOCVD growth and electrical characterisation of InAs thin films. [Internet] [Masters thesis]. Nelson Mandela Metropolitan University; 2007. [cited 2019 Dec 05]. Available from: http://hdl.handle.net/10948/706.

Council of Science Editors:

Shamba P. MOCVD growth and electrical characterisation of InAs thin films. [Masters Thesis]. Nelson Mandela Metropolitan University; 2007. Available from: http://hdl.handle.net/10948/706


Nelson Mandela Metropolitan University

3. Miya, Senzo Simo. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.

Degree: PhD, Faculty of Science, 2013, Nelson Mandela Metropolitan University

 The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications… (more)

Subjects/Keywords: Gallium arsenide semiconductors; Organometallic compounds; Compound semiconductors; Metal organic chemical vapor deposition; Superlattices as materials; Epitaxy

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APA (6th Edition):

Miya, S. S. (2013). Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. (Doctoral Dissertation). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/d1020866

Chicago Manual of Style (16th Edition):

Miya, Senzo Simo. “Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.” 2013. Doctoral Dissertation, Nelson Mandela Metropolitan University. Accessed December 05, 2019. http://hdl.handle.net/10948/d1020866.

MLA Handbook (7th Edition):

Miya, Senzo Simo. “Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.” 2013. Web. 05 Dec 2019.

Vancouver:

Miya SS. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. [Internet] [Doctoral dissertation]. Nelson Mandela Metropolitan University; 2013. [cited 2019 Dec 05]. Available from: http://hdl.handle.net/10948/d1020866.

Council of Science Editors:

Miya SS. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. [Doctoral Dissertation]. Nelson Mandela Metropolitan University; 2013. Available from: http://hdl.handle.net/10948/d1020866


Nelson Mandela Metropolitan University

4. Murape, Davison Munyaradzi. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.

Degree: PhD, Faculty of Science, 2014, Nelson Mandela Metropolitan University

 Since the development of the transistor in the Bell Telephone Laboratories in 1948 [78], the semiconductor industry has transformed the world we live in. It… (more)

Subjects/Keywords: Gallium arsenide semiconductors; Electronics

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APA (6th Edition):

Murape, D. M. (2014). On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. (Doctoral Dissertation). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/d1020763

Chicago Manual of Style (16th Edition):

Murape, Davison Munyaradzi. “On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.” 2014. Doctoral Dissertation, Nelson Mandela Metropolitan University. Accessed December 05, 2019. http://hdl.handle.net/10948/d1020763.

MLA Handbook (7th Edition):

Murape, Davison Munyaradzi. “On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.” 2014. Web. 05 Dec 2019.

Vancouver:

Murape DM. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. [Internet] [Doctoral dissertation]. Nelson Mandela Metropolitan University; 2014. [cited 2019 Dec 05]. Available from: http://hdl.handle.net/10948/d1020763.

Council of Science Editors:

Murape DM. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. [Doctoral Dissertation]. Nelson Mandela Metropolitan University; 2014. Available from: http://hdl.handle.net/10948/d1020763

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