Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for +publisher:"NSYSU" +contributor:("Yan-Ten Lu"). Showing records 1 – 22 of 22 total matches.

Search Limiters

Last 2 Years | English Only

No search limiters apply to these results.

▼ Search Limiters


NSYSU

1. Peng, Yu-lin. Photoreflectance of AlGaN/GaN heterostructure measured by using mercury lamp as pump beam.

Degree: Master, Physics, 2009, NSYSU

 Photoreflectance (PR) spectra of a GaN thin film and an AlGaN/GaN heterostructure were measured by using a HeCd laser or a mercury lamp as a… (more)

Subjects/Keywords: Franz-Keldysh oscillation; AlGaN; Photoreflectance

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Peng, Y. (2009). Photoreflectance of AlGaN/GaN heterostructure measured by using mercury lamp as pump beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729109-003626

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Peng, Yu-lin. “Photoreflectance of AlGaN/GaN heterostructure measured by using mercury lamp as pump beam.” 2009. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729109-003626.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Peng, Yu-lin. “Photoreflectance of AlGaN/GaN heterostructure measured by using mercury lamp as pump beam.” 2009. Web. 28 Sep 2020.

Vancouver:

Peng Y. Photoreflectance of AlGaN/GaN heterostructure measured by using mercury lamp as pump beam. [Internet] [Thesis]. NSYSU; 2009. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729109-003626.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Peng Y. Photoreflectance of AlGaN/GaN heterostructure measured by using mercury lamp as pump beam. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729109-003626

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Hsiao, Kai-yuan. Measuring photoreflectance spectroscopy of semiconductors by using optical fiber spectrometer.

Degree: Master, Physics, 2014, NSYSU

 We use optical fiber spectrometer to measure the optical modulated reflectance spectroscopy (PR, Photoreflectance). Traditional optical modulation reflectance spectroscopy can be used to measure the… (more)

Subjects/Keywords: gallium arsenide; optical modulation reflectance spectroscopy; fast Fourier transform; reflectivity; optical fiber spectrometer

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsiao, K. (2014). Measuring photoreflectance spectroscopy of semiconductors by using optical fiber spectrometer. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-150941

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsiao, Kai-yuan. “Measuring photoreflectance spectroscopy of semiconductors by using optical fiber spectrometer.” 2014. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-150941.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsiao, Kai-yuan. “Measuring photoreflectance spectroscopy of semiconductors by using optical fiber spectrometer.” 2014. Web. 28 Sep 2020.

Vancouver:

Hsiao K. Measuring photoreflectance spectroscopy of semiconductors by using optical fiber spectrometer. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-150941.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsiao K. Measuring photoreflectance spectroscopy of semiconductors by using optical fiber spectrometer. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-150941

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. Wu, Chieh-lung. Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells.

Degree: PhD, Physics, 2011, NSYSU

 The spin-splitting energies in strained bulk wurtzite aluminum nitride (AlN) are studied using the linear combination of atomic orbital method. It is found that strain… (more)

Subjects/Keywords: spin slitting; LCAO; Wurtzite; Rashba effect; Dresselhaus effect; quantum well

Page 1 Page 2 Page 3 Page 4 Page 5 Page 6 Page 7 Sample image

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wu, C. (2011). Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801111-142618

Chicago Manual of Style (16th Edition):

Wu, Chieh-lung. “Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells.” 2011. Doctoral Dissertation, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801111-142618.

MLA Handbook (7th Edition):

Wu, Chieh-lung. “Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells.” 2011. Web. 28 Sep 2020.

Vancouver:

Wu C. Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells. [Internet] [Doctoral dissertation]. NSYSU; 2011. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801111-142618.

Council of Science Editors:

Wu C. Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells. [Doctoral Dissertation]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801111-142618


NSYSU

4. Gau, Ming-Horng. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.

Degree: PhD, Physics, 2009, NSYSU

 The design, fabrication, and characterizations of the spin-polarized AlxGa1-xN/GaN HEMT structure have been achieved for spintronic application. By band calculation within linear combination of atomic… (more)

Subjects/Keywords: GaN; AlGaN; 2DEG; MOVPE; MBE; HEMT; SdH; spin-splitting; spintronics; LCAO

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gau, M. (2009). Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631

Chicago Manual of Style (16th Edition):

Gau, Ming-Horng. “Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.” 2009. Doctoral Dissertation, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631.

MLA Handbook (7th Edition):

Gau, Ming-Horng. “Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.” 2009. Web. 28 Sep 2020.

Vancouver:

Gau M. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. [Internet] [Doctoral dissertation]. NSYSU; 2009. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631.

Council of Science Editors:

Gau M. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. [Doctoral Dissertation]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631


NSYSU

5. Kao, Hsiu-Fen. Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors.

Degree: PhD, Physics, 2012, NSYSU

 In this study, the spin-splitting energy of the lowest conduction bands in bulk zincblende and wurtzite structures of III-V semiconductors had been investigated by the… (more)

Subjects/Keywords: two-band kï¼p (2KP); Spin splitting; zincblende; linear combination of atomic orbital (LCAO); atomic bond-orbital model (ABOM); wurtzite; minimum-spin-splitting (MSS) surface; equi-spin-splitting (ESS) surface

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kao, H. (2012). Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-003839

Chicago Manual of Style (16th Edition):

Kao, Hsiu-Fen. “Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors.” 2012. Doctoral Dissertation, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-003839.

MLA Handbook (7th Edition):

Kao, Hsiu-Fen. “Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors.” 2012. Web. 28 Sep 2020.

Vancouver:

Kao H. Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors. [Internet] [Doctoral dissertation]. NSYSU; 2012. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-003839.

Council of Science Editors:

Kao H. Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors. [Doctoral Dissertation]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-003839


NSYSU

6. Wang, Ying-Chieh. Study of GaN and its alloys for spintronics and optoelectronics.

Degree: PhD, Physics, 2015, NSYSU

 The potential of wurtzite GaN and it alloys for applying in the spintronics and optoelectronics has been discussed in this dissertation. For the application of… (more)

Subjects/Keywords: MBE; GaN microdisk; spin-splitting; nano-device; AlGaN/GaN heterostructure; GaN

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, Y. (2015). Study of GaN and its alloys for spintronics and optoelectronics. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134

Chicago Manual of Style (16th Edition):

Wang, Ying-Chieh. “Study of GaN and its alloys for spintronics and optoelectronics.” 2015. Doctoral Dissertation, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134.

MLA Handbook (7th Edition):

Wang, Ying-Chieh. “Study of GaN and its alloys for spintronics and optoelectronics.” 2015. Web. 28 Sep 2020.

Vancouver:

Wang Y. Study of GaN and its alloys for spintronics and optoelectronics. [Internet] [Doctoral dissertation]. NSYSU; 2015. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134.

Council of Science Editors:

Wang Y. Study of GaN and its alloys for spintronics and optoelectronics. [Doctoral Dissertation]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134


NSYSU

7. Kuo, Wen-Chang. Processes and Characteristic Analysis of GaN MOS Structure.

Degree: Master, Physics, 2000, NSYSU

 In this thesis we reveal that the Ohmic contacts of n-type and p-type GaN are obtained by the method of thermal evaporation. For different types… (more)

Subjects/Keywords: GaN; MOS

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kuo, W. (2000). Processes and Characteristic Analysis of GaN MOS Structure. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-161951

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuo, Wen-Chang. “Processes and Characteristic Analysis of GaN MOS Structure.” 2000. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-161951.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuo, Wen-Chang. “Processes and Characteristic Analysis of GaN MOS Structure.” 2000. Web. 28 Sep 2020.

Vancouver:

Kuo W. Processes and Characteristic Analysis of GaN MOS Structure. [Internet] [Thesis]. NSYSU; 2000. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-161951.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuo W. Processes and Characteristic Analysis of GaN MOS Structure. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-161951

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

8. Lee, Wei-Yao. Determination of magnitudes of modulating field:photoreflectance and electroreflectance on surface-intrinsic-n+ type doped GaAs.

Degree: Master, Physics, 2000, NSYSU

 The photoreflectance(PR) and Electroreflectance(ER) of surface-intrinsic-n+ type doped GaAs exhibit many Franz-Keldysh oscillations (FKOs), which enable the electric field (F) to be determined from the… (more)

Subjects/Keywords: modulating field; FKO; FFT; Electroreflectance; photoreflectance; surface-intrinsic-n+ type doped GaAs

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lee, W. (2000). Determination of magnitudes of modulating field:photoreflectance and electroreflectance on surface-intrinsic-n+ type doped GaAs. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621100-005007

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Wei-Yao. “Determination of magnitudes of modulating field:photoreflectance and electroreflectance on surface-intrinsic-n+ type doped GaAs.” 2000. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621100-005007.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Wei-Yao. “Determination of magnitudes of modulating field:photoreflectance and electroreflectance on surface-intrinsic-n+ type doped GaAs.” 2000. Web. 28 Sep 2020.

Vancouver:

Lee W. Determination of magnitudes of modulating field:photoreflectance and electroreflectance on surface-intrinsic-n+ type doped GaAs. [Internet] [Thesis]. NSYSU; 2000. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621100-005007.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee W. Determination of magnitudes of modulating field:photoreflectance and electroreflectance on surface-intrinsic-n+ type doped GaAs. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621100-005007

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. Hsu, Kuo-Chou. Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering.

Degree: Master, Physics, 2000, NSYSU

 ABSTRACT In this thesis we deposit GaN films by magnetron rf sputtering with changes substrate temperature. The electron probe microscope analysis ( EPMA ), scanning… (more)

Subjects/Keywords: GaN; sputtering; substrate temperate

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsu, K. (2000). Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705100-113701

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsu, Kuo-Chou. “Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering.” 2000. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705100-113701.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsu, Kuo-Chou. “Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering.” 2000. Web. 28 Sep 2020.

Vancouver:

Hsu K. Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering. [Internet] [Thesis]. NSYSU; 2000. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705100-113701.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsu K. Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705100-113701

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Lai, Chih-Ming. GaAs VCSEL Metallization and Characterization.

Degree: Master, Physics, 2000, NSYSU

 ãGaAs VCSEL Contact Process and Feature Analysis ãIn this article, we talk about the process of metalization on sample of epied GaAs VCSEL structure. We… (more)

Subjects/Keywords: EL; GaAs; VCSEL

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lai, C. (2000). GaAs VCSEL Metallization and Characterization. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lai, Chih-Ming. “GaAs VCSEL Metallization and Characterization.” 2000. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lai, Chih-Ming. “GaAs VCSEL Metallization and Characterization.” 2000. Web. 28 Sep 2020.

Vancouver:

Lai C. GaAs VCSEL Metallization and Characterization. [Internet] [Thesis]. NSYSU; 2000. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lai C. GaAs VCSEL Metallization and Characterization. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

11. Hong, Jeson. Investigation ofδ-dopedâ¢ï¼â¤ Semiconductor Quantum Well Using Photoluminescence.

Degree: Master, Physics, 2001, NSYSU

 We measure the energy gap of two-dimensional electron gas in AlAs0.56Sb0.44/Ga0.47In0.53As at low temperature by photoluminescence measurement. We intend to observe the intersubband transition in… (more)

Subjects/Keywords: δ-doped; quantum well; 2DEG

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hong, J. (2001). Investigation ofδ-dopedâ¢ï¼â¤ Semiconductor Quantum Well Using Photoluminescence. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706101-155927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hong, Jeson. “Investigation ofδ-dopedâ¢ï¼â¤ Semiconductor Quantum Well Using Photoluminescence.” 2001. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706101-155927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hong, Jeson. “Investigation ofδ-dopedâ¢ï¼â¤ Semiconductor Quantum Well Using Photoluminescence.” 2001. Web. 28 Sep 2020.

Vancouver:

Hong J. Investigation ofδ-dopedâ¢ï¼â¤ Semiconductor Quantum Well Using Photoluminescence. [Internet] [Thesis]. NSYSU; 2001. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706101-155927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hong J. Investigation ofδ-dopedâ¢ï¼â¤ Semiconductor Quantum Well Using Photoluminescence. [Thesis]. NSYSU; 2001. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706101-155927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

12. Wang, kuan-kuei. The dependence of E0+Î0 transition on temperature by photoreflectance spectroscopy of surface-intrinsic-n+ GaAs.

Degree: Master, Physics, 2003, NSYSU

 Photoreflectance (PR) of surface-intrinsic-n+ type GaAs has been measured for various temperatures, then we can get the energy of E0+Î0 transition in various temperatures. The… (more)

Subjects/Keywords: GaAs; FKO; s-i-n+; PR

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, k. (2003). The dependence of E0+Î0 transition on temperature by photoreflectance spectroscopy of surface-intrinsic-n+ GaAs. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0613103-181401

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, kuan-kuei. “The dependence of E0+Î0 transition on temperature by photoreflectance spectroscopy of surface-intrinsic-n+ GaAs.” 2003. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0613103-181401.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, kuan-kuei. “The dependence of E0+Î0 transition on temperature by photoreflectance spectroscopy of surface-intrinsic-n+ GaAs.” 2003. Web. 28 Sep 2020.

Vancouver:

Wang k. The dependence of E0+Î0 transition on temperature by photoreflectance spectroscopy of surface-intrinsic-n+ GaAs. [Internet] [Thesis]. NSYSU; 2003. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0613103-181401.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang k. The dependence of E0+Î0 transition on temperature by photoreflectance spectroscopy of surface-intrinsic-n+ GaAs. [Thesis]. NSYSU; 2003. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0613103-181401

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

13. Lin, Yu-Chuan. Electroreflectance of surface-intrinsic-n+ type doped GaAs by using a large modulating field.

Degree: Master, Physics, 2003, NSYSU

 It is known that electroreflectance (ER) of surface-intrinsic-n+ type doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to… (more)

Subjects/Keywords: GaAs; fast Fourier transform; heavy hole; electroreflectance; Franz-Keldysh Oscillation; light hole

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, Y. (2003). Electroreflectance of surface-intrinsic-n+ type doped GaAs by using a large modulating field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616103-170431

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Yu-Chuan. “Electroreflectance of surface-intrinsic-n+ type doped GaAs by using a large modulating field.” 2003. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616103-170431.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Yu-Chuan. “Electroreflectance of surface-intrinsic-n+ type doped GaAs by using a large modulating field.” 2003. Web. 28 Sep 2020.

Vancouver:

Lin Y. Electroreflectance of surface-intrinsic-n+ type doped GaAs by using a large modulating field. [Internet] [Thesis]. NSYSU; 2003. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616103-170431.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Y. Electroreflectance of surface-intrinsic-n+ type doped GaAs by using a large modulating field. [Thesis]. NSYSU; 2003. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616103-170431

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

14. Hsieh, Cheng-Chih. Electroreflectance of Au/GaN.

Degree: Master, Physics, 2007, NSYSU

 Electroreflectance (ER) spectra of Schottky-barrier Au/n-GaN have been measured at various dc biased voltages (Vbias). The ER spectra have exhibited excitonic signals beneath band-gap energy… (more)

Subjects/Keywords: Electroreflectance; GaN; barrier height

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsieh, C. (2007). Electroreflectance of Au/GaN. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703107-152805

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsieh, Cheng-Chih. “Electroreflectance of Au/GaN.” 2007. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703107-152805.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsieh, Cheng-Chih. “Electroreflectance of Au/GaN.” 2007. Web. 28 Sep 2020.

Vancouver:

Hsieh C. Electroreflectance of Au/GaN. [Internet] [Thesis]. NSYSU; 2007. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703107-152805.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsieh C. Electroreflectance of Au/GaN. [Thesis]. NSYSU; 2007. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703107-152805

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

15. Wang, Huei-Yu. The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements.

Degree: Master, Physics, 2004, NSYSU

 High efficiency components are key elements of solid-state amplifiers for wireless application. We used HEMT (high-electron-mobility transistor) to obtain high mobility 2DEGs. AlGaN makes itself… (more)

Subjects/Keywords: SdH; QMSA; Hall measurement; AlGaN

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, H. (2004). The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-152644

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Huei-Yu. “The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements.” 2004. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-152644.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Huei-Yu. “The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements.” 2004. Web. 28 Sep 2020.

Vancouver:

Wang H. The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements. [Internet] [Thesis]. NSYSU; 2004. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-152644.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang H. The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-152644

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

16. Lian, Jau-Rung. Study on the Electronic Properties of In0.22Ga0.78As/GaAs Single Quantum Wells.

Degree: Master, Physics, 2004, NSYSU

 We haved studied the magneto-transport properties of two dimensional electron gas (2DEG) in Si δ-doped In0.22Ga0.78As/AlGaAs single quantum wells ( QWs ) by using Shubnikov-de… (more)

Subjects/Keywords: Hall; SdH; inserted layer; quantum wells; GaAs; 2DEG

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lian, J. (2004). Study on the Electronic Properties of In0.22Ga0.78As/GaAs Single Quantum Wells. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-154102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lian, Jau-Rung. “Study on the Electronic Properties of In0.22Ga0.78As/GaAs Single Quantum Wells.” 2004. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-154102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lian, Jau-Rung. “Study on the Electronic Properties of In0.22Ga0.78As/GaAs Single Quantum Wells.” 2004. Web. 28 Sep 2020.

Vancouver:

Lian J. Study on the Electronic Properties of In0.22Ga0.78As/GaAs Single Quantum Wells. [Internet] [Thesis]. NSYSU; 2004. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-154102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lian J. Study on the Electronic Properties of In0.22Ga0.78As/GaAs Single Quantum Wells. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-154102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

17. Gau, Ming-Horng. Growth and characterization of AlGaN/GaN heterostructures.

Degree: Master, Physics, 2004, NSYSU

 We will discuss the growth and characterization of AlxGa1-xN/GaN on sapphire substrate by plasma-assisted molecular beam epitaxy. By performing the X-ray diffraction (XRD) of our… (more)

Subjects/Keywords: GaN; MBE; AlGaN

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gau, M. (2004). Growth and characterization of AlGaN/GaN heterostructures. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gau, Ming-Horng. “Growth and characterization of AlGaN/GaN heterostructures.” 2004. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gau, Ming-Horng. “Growth and characterization of AlGaN/GaN heterostructures.” 2004. Web. 28 Sep 2020.

Vancouver:

Gau M. Growth and characterization of AlGaN/GaN heterostructures. [Internet] [Thesis]. NSYSU; 2004. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gau M. Growth and characterization of AlGaN/GaN heterostructures. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

18. Li, Yen-Chi. Temperature-dependent Hall measurement on undoped GaN epilayer.

Degree: Master, Physics, 2004, NSYSU

 The temperature-dependent Hall measurement was performed on the undoped GaN thin films grown by molecular beam epitaxy. The mobility and electron density were obtained by… (more)

Subjects/Keywords: GaN

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, Y. (2004). Temperature-dependent Hall measurement on undoped GaN epilayer. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712104-002217

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Yen-Chi. “Temperature-dependent Hall measurement on undoped GaN epilayer.” 2004. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712104-002217.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Yen-Chi. “Temperature-dependent Hall measurement on undoped GaN epilayer.” 2004. Web. 28 Sep 2020.

Vancouver:

Li Y. Temperature-dependent Hall measurement on undoped GaN epilayer. [Internet] [Thesis]. NSYSU; 2004. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712104-002217.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li Y. Temperature-dependent Hall measurement on undoped GaN epilayer. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712104-002217

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

19. Chen, Chao-nien. Photoreflectance spectroscopy of InN at different temperature.

Degree: Master, Physics, 2005, NSYSU

 InN is a semiconductor material of vary high electron mobility, so InN have potential for high speed electronic device. But the bandgap is not sure.… (more)

Subjects/Keywords: InN; photoreflectance; exciton

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, C. (2005). Photoreflectance spectroscopy of InN at different temperature. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704105-134536

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Chao-nien. “Photoreflectance spectroscopy of InN at different temperature.” 2005. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704105-134536.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Chao-nien. “Photoreflectance spectroscopy of InN at different temperature.” 2005. Web. 28 Sep 2020.

Vancouver:

Chen C. Photoreflectance spectroscopy of InN at different temperature. [Internet] [Thesis]. NSYSU; 2005. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704105-134536.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen C. Photoreflectance spectroscopy of InN at different temperature. [Thesis]. NSYSU; 2005. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704105-134536

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

20. Chang, Chia-Hsuan. Determining band bending of GaN by using contactless Electroreflectance spectroscopy.

Degree: Master, Physics, 2005, NSYSU

Using contactless Electroreflectance spectroscopy to determine the face terminate of GaN. Advisors/Committee Members: Li-Wei Du (chair), Yan-Ten Lu (chair), Dong-Po Wang (committee member).

Subjects/Keywords: CER; PR; GaN

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chang, C. (2005). Determining band bending of GaN by using contactless Electroreflectance spectroscopy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629105-165122

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Chia-Hsuan. “Determining band bending of GaN by using contactless Electroreflectance spectroscopy.” 2005. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629105-165122.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Chia-Hsuan. “Determining band bending of GaN by using contactless Electroreflectance spectroscopy.” 2005. Web. 28 Sep 2020.

Vancouver:

Chang C. Determining band bending of GaN by using contactless Electroreflectance spectroscopy. [Internet] [Thesis]. NSYSU; 2005. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629105-165122.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang C. Determining band bending of GaN by using contactless Electroreflectance spectroscopy. [Thesis]. NSYSU; 2005. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629105-165122

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

21. Tsai, Jenn-Kai. Growth and characterization of wide bandgap GaN semiconductor.

Degree: PhD, Physics, 2003, NSYSU

 Veeco Applied EPI 930 molecular beam epitaxy system equipped with a radio frequency plasma assisted nitrogen source has been introduced and the growth procedure and… (more)

Subjects/Keywords: buffer layer; epilayer; GaN; piezoelectric effect; MBE; nitridation; spin splitting

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tsai, J. (2003). Growth and characterization of wide bandgap GaN semiconductor. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728103-211118

Chicago Manual of Style (16th Edition):

Tsai, Jenn-Kai. “Growth and characterization of wide bandgap GaN semiconductor.” 2003. Doctoral Dissertation, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728103-211118.

MLA Handbook (7th Edition):

Tsai, Jenn-Kai. “Growth and characterization of wide bandgap GaN semiconductor.” 2003. Web. 28 Sep 2020.

Vancouver:

Tsai J. Growth and characterization of wide bandgap GaN semiconductor. [Internet] [Doctoral dissertation]. NSYSU; 2003. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728103-211118.

Council of Science Editors:

Tsai J. Growth and characterization of wide bandgap GaN semiconductor. [Doctoral Dissertation]. NSYSU; 2003. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728103-211118


NSYSU

22. Wu, Chia-Chun. Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance.

Degree: Master, Physics, 2006, NSYSU

 Electroreflectance spectra of AlGaN/GaN heteostructure were measured for various biased voltage (Vbias). There are Franz-Keldysh oscillations (FKOs) exhibiting above band gap of AlGaN, and strength… (more)

Subjects/Keywords: GaN; 2DEG; FKOs; ER; AlGaN

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wu, C. (2006). Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710106-205605

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Chia-Chun. “Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance.” 2006. Thesis, NSYSU. Accessed September 28, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710106-205605.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Chia-Chun. “Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance.” 2006. Web. 28 Sep 2020.

Vancouver:

Wu C. Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance. [Internet] [Thesis]. NSYSU; 2006. [cited 2020 Sep 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710106-205605.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu C. Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance. [Thesis]. NSYSU; 2006. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710106-205605

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.