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You searched for +publisher:"NSYSU" +contributor:("Tsung-Ming Tsai"). Showing records 1 – 30 of 87 total matches.

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NSYSU

1. Yang, Cheng-Chi. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 We find that the forming voltage will become larger when the cell size is scale down which might deter the real applications for RRAM devices.… (more)

Subjects/Keywords: Thermal conductivity coefficient; Dielectric coefficient; Reliability; Hafnium oxide; Side wall; RRAM

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yang, C. (2017). Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Cheng-Chi. “Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.” 2017. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Cheng-Chi. “Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.” 2017. Web. 23 Apr 2019.

Vancouver:

Yang C. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Lin, Wen-yan. Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 In this study, we demonstrate completely different characteristics with different operating modes and analyze the electrical field effect to confirm the filament dissolution behavior. Compared… (more)

Subjects/Keywords: fast IV; thermal effect; HRS; electrical field effect; RRAM

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APA (6th Edition):

Lin, W. (2017). Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Wen-yan. “Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory.” 2017. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Wen-yan. “Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory.” 2017. Web. 23 Apr 2019.

Vancouver:

Lin W. Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin W. Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

3. Chen , Li-Hui. Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs.

Degree: Master, Electro-Optical Engineering, 2017, NSYSU

 Metal-oxide-semiconductor field effect transistor (MOSFET) is the most important device for advanced integrated circuits. The main advantages of a MOSFET are lower fabrication costs per… (more)

Subjects/Keywords: RPO; SOI; MOSFETs; hole injection; hot carrier degradation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen , L. (2017). Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen , Li-Hui. “Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs.” 2017. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen , Li-Hui. “Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs.” 2017. Web. 23 Apr 2019.

Vancouver:

Chen L. Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen L. Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

4. Li, Cheng-Hua. The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2009, NSYSU

 There are many intensive researches for zinc compounds due to their wide band gaps and potential applications in visible and UV optoelectronic technologies. Zinc nitride… (more)

Subjects/Keywords: zinc nitride; heat treatment; reactive sputtering; p-n junction

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, C. (2009). The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907109-113605

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Cheng-Hua. “The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization.” 2009. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907109-113605.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Cheng-Hua. “The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization.” 2009. Web. 23 Apr 2019.

Vancouver:

Li C. The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907109-113605.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li C. The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907109-113605

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

5. Chuang, Ying-shao. Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT.

Degree: Master, Physics, 2010, NSYSU

 In this work, electrical mechanism of Low Temperature Poly-Si Thin-Film Transistors (LTPS TFTs) and Nonvolatile memory TFTs was investigated. First, relationship between trap states in… (more)

Subjects/Keywords: anomalous capacitance; TFT; GIDL

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chuang, Y. (2010). Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623110-155624

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chuang, Ying-shao. “Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT.” 2010. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623110-155624.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chuang, Ying-shao. “Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT.” 2010. Web. 23 Apr 2019.

Vancouver:

Chuang Y. Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT. [Internet] [Thesis]. NSYSU; 2010. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623110-155624.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chuang Y. Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT. [Thesis]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623110-155624

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Chen, Yu-te. Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors.

Degree: Master, Electro-Optical Engineering, 2013, NSYSU

 It is found that the metal-oxide semiconductor such as indium-gallium-zinc-oxide thin film transistor under the high current, high bias, and light illumination operation can cause… (more)

Subjects/Keywords: indium-gallium-zinc-oxide; InGaZnO; hot-carrier; self-heating; thin film transistor; metal-oxide semiconductor; TFT

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APA (6th Edition):

Chen, Y. (2013). Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yu-te. “Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors.” 2013. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yu-te. “Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors.” 2013. Web. 23 Apr 2019.

Vancouver:

Chen Y. Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Liang, Shu-ping. Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2013, NSYSU

 ITO is a transparent conductive film, owning to high transmittance and good electrical conductivity, ITO has been applied in a wide range over touch panel,… (more)

Subjects/Keywords: Transparent conductive film of ITO; SCCO2; Comsol simulation; Resistance Random access memory

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Liang, S. (2013). Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liang, Shu-ping. “Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode.” 2013. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liang, Shu-ping. “Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode.” 2013. Web. 23 Apr 2019.

Vancouver:

Liang S. Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liang S. Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

8. Yang, Man-Chun. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.

Degree: Master, Electro-Optical Engineering, 2013, NSYSU

 In recent year, the large size and high pixel is need for variously advanced displays. Thus, the stable reliability and standard characteristic is most important… (more)

Subjects/Keywords: indium-gallium-zinc-oxide thin film transistor; UV sensor; light induced instability; high current stress

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yang, M. (2013). Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Man-Chun. “Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.” 2013. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Man-Chun. “Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.” 2013. Web. 23 Apr 2019.

Vancouver:

Yang M. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang M. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. Lin, Hong-yang. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.

Degree: Master, Materials and Optoelectronic Science, 2013, NSYSU

 Resistive Random Access Memory (RRAM) is considered as one of the most promising candidate for the next-generation memories due to their excellent properties such as… (more)

Subjects/Keywords: Hafnium Oxide; RRAM; Concentration of Oxygen; Nernst Equation; Energy Dissipation Rate

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, H. (2013). Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Web. 23 Apr 2019.

Vancouver:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Chen, Wen-bin. Sulfurization of selenized CuInSe2-related thin films for photovoltaic applications.

Degree: Master, Materials and Optoelectronic Science, 2013, NSYSU

 Nowadays, controlling the cost is an important part for every industry especially for solar cell industry. Take CuIn1-xGaxSe2 (CIGSe) thin-film solar cells for example, the… (more)

Subjects/Keywords: CuInSe2; CuInSxSe2-x; Thin-film solar cells; Selenization; Sulfurization

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, W. (2013). Sulfurization of selenized CuInSe2-related thin films for photovoltaic applications. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-161319

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Wen-bin. “Sulfurization of selenized CuInSe2-related thin films for photovoltaic applications.” 2013. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-161319.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Wen-bin. “Sulfurization of selenized CuInSe2-related thin films for photovoltaic applications.” 2013. Web. 23 Apr 2019.

Vancouver:

Chen W. Sulfurization of selenized CuInSe2-related thin films for photovoltaic applications. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-161319.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen W. Sulfurization of selenized CuInSe2-related thin films for photovoltaic applications. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-161319

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

11. Peng, Han-Kuang. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2013, NSYSU

 In this thesis, silicon dioxide (SiO2) doped hafnium oxide (HfO2) is applied to form low-k doped high-k materials, and the multilayer structure is used to… (more)

Subjects/Keywords: RRAM; SiO2; High-K; HfO2; energy dissipation rate; Low-K; critical energy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Peng, H. (2013). Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Peng, Han-Kuang. “Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.” 2013. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Peng, Han-Kuang. “Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.” 2013. Web. 23 Apr 2019.

Vancouver:

Peng H. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Peng H. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

12. You, Bo. Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs.

Degree: Master, Electro-Optical Engineering, 2014, NSYSU

 Transistors with Moore's Law to the number of transistors per unit area of 18 months to grow geometrically, which not only reduces the cost of… (more)

Subjects/Keywords: SOI; Charge Pumping; Random Telegraph Signal; hot carrier stress; double diffused drain

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

You, B. (2014). Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-135842

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

You, Bo. “Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs.” 2014. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-135842.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

You, Bo. “Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs.” 2014. Web. 23 Apr 2019.

Vancouver:

You B. Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-135842.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

You B. Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-135842

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

13. Lin, Kun-Yao. Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays.

Degree: Master, Physics, 2014, NSYSU

 In the first section, we investigate the hot-carrier effect in indiumâgalliumâzinc oxide (IGZO) thin film transistors with symmetric and asymmetric source/drain structures. The different degradation… (more)

Subjects/Keywords: Threshold voltage; charge trapping; Thin Film Transistors; Hot Carrier Effect; InGaZnO; Self-Heating Effect; kick back voltage

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APA (6th Edition):

Lin, K. (2014). Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-165953

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Kun-Yao. “Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays.” 2014. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-165953.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Kun-Yao. “Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays.” 2014. Web. 23 Apr 2019.

Vancouver:

Lin K. Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-165953.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin K. Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-165953

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

14. Huang, Kuan-Chi. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.

Degree: Master, Physics, 2014, NSYSU

 In order to clarify the mechanism of reset process in Ti/HfO2/TiN resistive random access memory (RRAM) devices, constant voltage sampling measurements are carried out at… (more)

Subjects/Keywords: complementary resistive switches; indium tin oxide; activation energy; hafnium; resistive random access memory

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, K. (2014). Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Web. 23 Apr 2019.

Vancouver:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

15. Ciou, Jian-Fa. Study on Diamond-Like Carbon Resistive Random Access Memory.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2014, NSYSU

 In recent study, C doped SiO2 was found as a dielectric layer exhibiting a very good RRAM performance. The resistive switching mechanism of C:SiO2 RRAM… (more)

Subjects/Keywords: Resistance Random access memory; diamond-like carbon; hydrogenating

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ciou, J. (2014). Study on Diamond-Like Carbon Resistive Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ciou, Jian-Fa. “Study on Diamond-Like Carbon Resistive Random Access Memory.” 2014. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ciou, Jian-Fa. “Study on Diamond-Like Carbon Resistive Random Access Memory.” 2014. Web. 23 Apr 2019.

Vancouver:

Ciou J. Study on Diamond-Like Carbon Resistive Random Access Memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ciou J. Study on Diamond-Like Carbon Resistive Random Access Memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

16. Peng, Shiang-Yi. The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 This paper is surrounded by oxygen ions have better adsorption characteristics of indium tin oxide (ITO) and Transition metal gadolinium used in resistive random access… (more)

Subjects/Keywords: RRAM; Complementary resistive switches; oxygen ion-adsorbing layer; transparent conductive film of indium tin oxide; gadolinium; flexible

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Peng, S. (2014). The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-134801

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Peng, Shiang-Yi. “The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory.” 2014. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-134801.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Peng, Shiang-Yi. “The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory.” 2014. Web. 23 Apr 2019.

Vancouver:

Peng S. The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-134801.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Peng S. The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-134801

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

17. Wang, Huei-Jruan. Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 With the progress of technology, high capacity and scalable are required in the future. Recent years, the physical limit is approached and a next-generation memory… (more)

Subjects/Keywords: Spike timing dependent plasticity; Graphene oxide; Resistance random access memory; Biomimicry; Complementary resistance switch

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APA (6th Edition):

Wang, H. (2014). Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616114-184706

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Huei-Jruan. “Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure.” 2014. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616114-184706.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Huei-Jruan. “Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure.” 2014. Web. 23 Apr 2019.

Vancouver:

Wang H. Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616114-184706.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang H. Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616114-184706

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

18. Chen, Chien-Ming. Fabrication of CuGaSe2/Si heterostructures for solar-cell applications.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 For the composition control and testing electric properties, polycrystalline CuGaSe2 (CGSe) films with near-stoichiometric compositions were deposited by three-source co-evaporation on glass without the substrate… (more)

Subjects/Keywords: Molecular beam deposition; orientation domain structure; CuGaSe2 epitaxy; CuGaSe2/Si heterojunction solar cell

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, C. (2016). Fabrication of CuGaSe2/Si heterostructures for solar-cell applications. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710116-163215

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Chien-Ming. “Fabrication of CuGaSe2/Si heterostructures for solar-cell applications.” 2016. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710116-163215.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Chien-Ming. “Fabrication of CuGaSe2/Si heterostructures for solar-cell applications.” 2016. Web. 23 Apr 2019.

Vancouver:

Chen C. Fabrication of CuGaSe2/Si heterostructures for solar-cell applications. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710116-163215.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen C. Fabrication of CuGaSe2/Si heterostructures for solar-cell applications. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710116-163215

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

19. Jian, De-xiang. Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 With the advent of technology evolution, the needs of memory become more important. Resistance random access memory (RRAM) is one of the mainstream research topics… (more)

Subjects/Keywords: Endurance; Multi-state; Retention; Doping; Stability; RRAM

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jian, D. (2016). Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jian, De-xiang. “Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device.” 2016. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jian, De-xiang. “Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device.” 2016. Web. 23 Apr 2019.

Vancouver:

Jian D. Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jian D. Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

20. Lin, Yi-ling. Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R).

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 In this study, we further research the switching mechanism during reset process in one-transistor-one-resistance random access memory (1T1R) devices. When conducting RRAM measurement, step voltage… (more)

Subjects/Keywords: Reset process; 1T1R; Fast IV; Resistance Random Access Memory; current thermal effect

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, Y. (2016). Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R). (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625116-213343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Yi-ling. “Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R).” 2016. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625116-213343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Yi-ling. “Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R).” 2016. Web. 23 Apr 2019.

Vancouver:

Lin Y. Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R). [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625116-213343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Y. Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R). [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625116-213343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

21. Chou, Yi-chen. Characterization of Doped-TiO2 Material Prepared by Molten-Salt Method and Reactive Sputtering.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 Room temperature ferromagnetism is the crucial property for the oxide material such as TiO2 to be successfully used in spintronic devices. In this study, we… (more)

Subjects/Keywords: Titanium Dioxide; Molten-Salt Method; Reactive Magnetron Co-Sputtering; Dilute Magnetic Semiconductor; Cobalt Doping

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APA (6th Edition):

Chou, Y. (2016). Characterization of Doped-TiO2 Material Prepared by Molten-Salt Method and Reactive Sputtering. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0120116-043727

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chou, Yi-chen. “Characterization of Doped-TiO2 Material Prepared by Molten-Salt Method and Reactive Sputtering.” 2016. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0120116-043727.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chou, Yi-chen. “Characterization of Doped-TiO2 Material Prepared by Molten-Salt Method and Reactive Sputtering.” 2016. Web. 23 Apr 2019.

Vancouver:

Chou Y. Characterization of Doped-TiO2 Material Prepared by Molten-Salt Method and Reactive Sputtering. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0120116-043727.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chou Y. Characterization of Doped-TiO2 Material Prepared by Molten-Salt Method and Reactive Sputtering. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0120116-043727

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

22. Chen, Yue. Characterization of CuAlSe2/Si heterostructures grown by MBE.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 We used molecular beam deposition system to grow CuAlSe2 (CAS) thin film. At first, CAS thin films were grown on glass substrates for adjusting chemical… (more)

Subjects/Keywords: molecular beam epitaxy; solar cell; CuAlSe2 /Si heterojunction; PC1D simulation tool

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, Y. (2016). Characterization of CuAlSe2/Si heterostructures grown by MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yue. “Characterization of CuAlSe2/Si heterostructures grown by MBE.” 2016. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yue. “Characterization of CuAlSe2/Si heterostructures grown by MBE.” 2016. Web. 23 Apr 2019.

Vancouver:

Chen Y. Characterization of CuAlSe2/Si heterostructures grown by MBE. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Characterization of CuAlSe2/Si heterostructures grown by MBE. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

23. Wang, Zhi-yang. Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 The information stored in human brain is different from computer, it storages and transmits messages through analog signal instead of digital signal. In this study,… (more)

Subjects/Keywords: RRAM; CRS; synaptic plasticity; STDP; STM; LTM; analog storage; lithium silicate

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APA (6th Edition):

Wang, Z. (2014). Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Zhi-yang. “Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems.” 2014. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Zhi-yang. “Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems.” 2014. Web. 23 Apr 2019.

Vancouver:

Wang Z. Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang Z. Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Lin, Ni-ke. Study on characteristics and forming process of BNOx resistance random access memory.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 In the age of information explosion, people demand high speed and capacity memory. In addition, due to the limitation of memory device, either academia or… (more)

Subjects/Keywords: RRAMï¼forming processï¼boron nitrideï¼ripple effectãendurance

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APA (6th Edition):

Lin, N. (2016). Study on characteristics and forming process of BNOx resistance random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628116-143956

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Ni-ke. “Study on characteristics and forming process of BNOx resistance random access memory.” 2016. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628116-143956.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Ni-ke. “Study on characteristics and forming process of BNOx resistance random access memory.” 2016. Web. 23 Apr 2019.

Vancouver:

Lin N. Study on characteristics and forming process of BNOx resistance random access memory. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628116-143956.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin N. Study on characteristics and forming process of BNOx resistance random access memory. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628116-143956

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

25. Liu, Li-Kuan. Preparation of CuInSe2 epitaxial films for ultrathin Si solar cell.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 As the Si wafer tends to decrease in thickness for current developments of crystalline Si solar cells, light trapping becomes a crucial technology to enhance… (more)

Subjects/Keywords: p-CuGaSe2/n-Si/n-CuInSe2; PC1D simulation; extrinsic doping of Zn; ultra-thin Si wafers; n-Si/p-Si/p-CIS

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APA (6th Edition):

Liu, L. (2016). Preparation of CuInSe2 epitaxial films for ultrathin Si solar cell. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805116-140206

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Li-Kuan. “Preparation of CuInSe2 epitaxial films for ultrathin Si solar cell.” 2016. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805116-140206.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Li-Kuan. “Preparation of CuInSe2 epitaxial films for ultrathin Si solar cell.” 2016. Web. 23 Apr 2019.

Vancouver:

Liu L. Preparation of CuInSe2 epitaxial films for ultrathin Si solar cell. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805116-140206.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu L. Preparation of CuInSe2 epitaxial films for ultrathin Si solar cell. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805116-140206

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

26. Liu, Shih-lun. High efficiency ultra-thin Si heterojunction solar cells: Device design and fabrication.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 To improve the efficiency of silicon solar cell. We simulate some designed devices by PC1D before fabricating really ones. We propose that ohmic contact between… (more)

Subjects/Keywords: PC1D; CuGaSe2; CuInSe2; heterojunction; solar cell simulation

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APA (6th Edition):

Liu, S. (2016). High efficiency ultra-thin Si heterojunction solar cells: Device design and fabrication. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805116-161043

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Shih-lun. “High efficiency ultra-thin Si heterojunction solar cells: Device design and fabrication.” 2016. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805116-161043.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Shih-lun. “High efficiency ultra-thin Si heterojunction solar cells: Device design and fabrication.” 2016. Web. 23 Apr 2019.

Vancouver:

Liu S. High efficiency ultra-thin Si heterojunction solar cells: Device design and fabrication. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805116-161043.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu S. High efficiency ultra-thin Si heterojunction solar cells: Device design and fabrication. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805116-161043

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

27. Lee, Yu-Tai. Preparation of high quality CZTSe thin films for solar cell applications.

Degree: Master, Materials and Optoelectronic Science, 2015, NSYSU

 The single-phase CZTSe films can be synthesized with the preset composition of Zn/Sn=1.0, 0.5â¦Cu/(Zn+Sn)â¦0.75, Se/(Cu+Zn+Sn)=1.2. The Sn, Zn and Cu precursors were deposited with the… (more)

Subjects/Keywords: Cu2ZnSnSe4; rapid thermal selenization; thin film solar cell; resistivity

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lee, Y. (2015). Preparation of high quality CZTSe thin films for solar cell applications. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723115-153458

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Yu-Tai. “Preparation of high quality CZTSe thin films for solar cell applications.” 2015. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723115-153458.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Yu-Tai. “Preparation of high quality CZTSe thin films for solar cell applications.” 2015. Web. 23 Apr 2019.

Vancouver:

Lee Y. Preparation of high quality CZTSe thin films for solar cell applications. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723115-153458.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee Y. Preparation of high quality CZTSe thin films for solar cell applications. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723115-153458

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

28. Tseng, Tsung-yi. An interdiffusion study of a Zn(S,O)/CZTSe bilayer structure for photovoltaic applications.

Degree: Master, Materials and Optoelectronic Science, 2015, NSYSU

 This experiment tried to use multiple methods to make ZnS thin film and dope O to form ZnS1-xOx (Zn(S,O)) thin film, and finally selected Reactive… (more)

Subjects/Keywords: sputtering; interdiffusion; Zn(S,O); CZTSe

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APA (6th Edition):

Tseng, T. (2015). An interdiffusion study of a Zn(S,O)/CZTSe bilayer structure for photovoltaic applications. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801115-133714

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tseng, Tsung-yi. “An interdiffusion study of a Zn(S,O)/CZTSe bilayer structure for photovoltaic applications.” 2015. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801115-133714.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tseng, Tsung-yi. “An interdiffusion study of a Zn(S,O)/CZTSe bilayer structure for photovoltaic applications.” 2015. Web. 23 Apr 2019.

Vancouver:

Tseng T. An interdiffusion study of a Zn(S,O)/CZTSe bilayer structure for photovoltaic applications. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801115-133714.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tseng T. An interdiffusion study of a Zn(S,O)/CZTSe bilayer structure for photovoltaic applications. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801115-133714

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

29. Chen, I-chieh. The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 With the improvement of nano technology, semiconductor devices would be scaled down and face the physic limitation. Therefore, it is unavoidably to study on the… (more)

Subjects/Keywords: Nonvolatile memory (NVM); Resistive Random Access Memory (RRAM); Ag-Cu alloy; conducting mechanism; ion migration

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APA (6th Edition):

Chen, I. (2016). The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, I-chieh. “The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory.” 2016. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, I-chieh. “The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory.” 2016. Web. 23 Apr 2019.

Vancouver:

Chen I. The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen I. The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

30. Yeh, Kuan-Hung. Study on growth mechanism and characteristics of transparent conductive boron doped diamond thin films.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2012, NSYSU

 This thesis presents the fabrication of transparent conductive Boron-Doped CVD diamond (BDD) thin film with the appropriate processing parameters. The BDD shows the transmittance in… (more)

Subjects/Keywords: Raman; transparency; dc bias; MWCVD; boron doped diamond

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APA (6th Edition):

Yeh, K. (2012). Study on growth mechanism and characteristics of transparent conductive boron doped diamond thin films. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128112-160524

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yeh, Kuan-Hung. “Study on growth mechanism and characteristics of transparent conductive boron doped diamond thin films.” 2012. Thesis, NSYSU. Accessed April 23, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128112-160524.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yeh, Kuan-Hung. “Study on growth mechanism and characteristics of transparent conductive boron doped diamond thin films.” 2012. Web. 23 Apr 2019.

Vancouver:

Yeh K. Study on growth mechanism and characteristics of transparent conductive boron doped diamond thin films. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Apr 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128112-160524.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yeh K. Study on growth mechanism and characteristics of transparent conductive boron doped diamond thin films. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128112-160524

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2] [3]

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