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You searched for +publisher:"NSYSU" +contributor:("Ting-Chang Chang"). Showing records 1 – 30 of 151 total matches.

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NSYSU

1. Hsiao, Po-wen. NBTI characteristics of p-MOSFETs under external mechanical stress.

Degree: Master, Physics, 2009, NSYSU

 In this thesis, in order to eliminate process issue, an external mechanical uniaxial tensile and compressive stress applied on p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs)… (more)

Subjects/Keywords: mechanical stress; NBTI; PMOSFET

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsiao, P. (2009). NBTI characteristics of p-MOSFETs under external mechanical stress. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-175508

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsiao, Po-wen. “NBTI characteristics of p-MOSFETs under external mechanical stress.” 2009. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-175508.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsiao, Po-wen. “NBTI characteristics of p-MOSFETs under external mechanical stress.” 2009. Web. 26 Apr 2019.

Vancouver:

Hsiao P. NBTI characteristics of p-MOSFETs under external mechanical stress. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-175508.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsiao P. NBTI characteristics of p-MOSFETs under external mechanical stress. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-175508

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Chen, I-cheng. The multifunctional fiber platform made by sol-gel process.

Degree: Master, Electro-Optical Engineering, 2015, NSYSU

 With emergence of the demand for functional fiber, there are many fiber appeared in succession, such as optical fiber sensors, optical amplifiers, fiber grating, etc.… (more)

Subjects/Keywords: fiber; sol-gel; modified; SCCO2; fluorescent

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APA (6th Edition):

Chen, I. (2015). The multifunctional fiber platform made by sol-gel process. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527115-194428

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, I-cheng. “The multifunctional fiber platform made by sol-gel process.” 2015. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527115-194428.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, I-cheng. “The multifunctional fiber platform made by sol-gel process.” 2015. Web. 26 Apr 2019.

Vancouver:

Chen I. The multifunctional fiber platform made by sol-gel process. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527115-194428.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen I. The multifunctional fiber platform made by sol-gel process. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527115-194428

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

3. Yang, Cheng-Chi. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 We find that the forming voltage will become larger when the cell size is scale down which might deter the real applications for RRAM devices.… (more)

Subjects/Keywords: Thermal conductivity coefficient; Dielectric coefficient; Reliability; Hafnium oxide; Side wall; RRAM

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APA (6th Edition):

Yang, C. (2017). Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Cheng-Chi. “Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.” 2017. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Cheng-Chi. “Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.” 2017. Web. 26 Apr 2019.

Vancouver:

Yang C. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

4. Lin, Wen-yan. Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 In this study, we demonstrate completely different characteristics with different operating modes and analyze the electrical field effect to confirm the filament dissolution behavior. Compared… (more)

Subjects/Keywords: fast IV; thermal effect; HRS; electrical field effect; RRAM

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APA (6th Edition):

Lin, W. (2017). Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Wen-yan. “Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory.” 2017. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Wen-yan. “Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory.” 2017. Web. 26 Apr 2019.

Vancouver:

Lin W. Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin W. Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

5. Chen , Li-Hui. Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs.

Degree: Master, Electro-Optical Engineering, 2017, NSYSU

 Metal-oxide-semiconductor field effect transistor (MOSFET) is the most important device for advanced integrated circuits. The main advantages of a MOSFET are lower fabrication costs per… (more)

Subjects/Keywords: RPO; SOI; MOSFETs; hole injection; hot carrier degradation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen , L. (2017). Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen , Li-Hui. “Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs.” 2017. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen , Li-Hui. “Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs.” 2017. Web. 26 Apr 2019.

Vancouver:

Chen L. Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen L. Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Hsieh, Han-Po. Investigation on Degradation Effect of Low-Temperature Poly-Si TFT under Dynamic Stress.

Degree: Master, Electro-Optical Engineering, 2008, NSYSU

 In this research, the degradation effect of the low temperature polycrystalline silicon TFTs (LTPS TFTs) under dynamic stress was investigated. The experiment results revealed that… (more)

Subjects/Keywords: degradation; poly-si; polysilicon; Poly-Si TFT; ac stress

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsieh, H. (2008). Investigation on Degradation Effect of Low-Temperature Poly-Si TFT under Dynamic Stress. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0111108-122118

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsieh, Han-Po. “Investigation on Degradation Effect of Low-Temperature Poly-Si TFT under Dynamic Stress.” 2008. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0111108-122118.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsieh, Han-Po. “Investigation on Degradation Effect of Low-Temperature Poly-Si TFT under Dynamic Stress.” 2008. Web. 26 Apr 2019.

Vancouver:

Hsieh H. Investigation on Degradation Effect of Low-Temperature Poly-Si TFT under Dynamic Stress. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0111108-122118.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsieh H. Investigation on Degradation Effect of Low-Temperature Poly-Si TFT under Dynamic Stress. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0111108-122118

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Huang, Chinh-mei. Investigation on Electrical Characteristics at Low Temperature and Photo Leakage Current of a-Si Thin Film Transistor.

Degree: Master, Electro-Optical Engineering, 2008, NSYSU

 Since the traditional CRT(Cathode Ray Tube) replaced by FPD(Flat Panel Display), e.g. LCDãOLEDãPDP, FPD industry is regarded as the important one of global industry following… (more)

Subjects/Keywords: low Temperature; a-Si TFT; thin film transistor; photo leakage current; a-Si thin film transistor

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, C. (2008). Investigation on Electrical Characteristics at Low Temperature and Photo Leakage Current of a-Si Thin Film Transistor. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0122108-203151

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Chinh-mei. “Investigation on Electrical Characteristics at Low Temperature and Photo Leakage Current of a-Si Thin Film Transistor.” 2008. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0122108-203151.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Chinh-mei. “Investigation on Electrical Characteristics at Low Temperature and Photo Leakage Current of a-Si Thin Film Transistor.” 2008. Web. 26 Apr 2019.

Vancouver:

Huang C. Investigation on Electrical Characteristics at Low Temperature and Photo Leakage Current of a-Si Thin Film Transistor. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0122108-203151.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang C. Investigation on Electrical Characteristics at Low Temperature and Photo Leakage Current of a-Si Thin Film Transistor. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0122108-203151

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

8. Lin, Shu-Ching. Investigation on the ZnO Thin Film for Optoelectronic Device Application.

Degree: Master, Electro-Optical Engineering, 2008, NSYSU

 In recent years, transparent and conductive layers of some metallic oxide, such as cadmium oxide, indium oxide, tin oxide and zinc oxide, can be used… (more)

Subjects/Keywords: Znic Oxide; ZnO; sol-gel

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, S. (2008). Investigation on the ZnO Thin Film for Optoelectronic Device Application. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0122108-062049

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Shu-Ching. “Investigation on the ZnO Thin Film for Optoelectronic Device Application.” 2008. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0122108-062049.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Shu-Ching. “Investigation on the ZnO Thin Film for Optoelectronic Device Application.” 2008. Web. 26 Apr 2019.

Vancouver:

Lin S. Investigation on the ZnO Thin Film for Optoelectronic Device Application. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0122108-062049.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin S. Investigation on the ZnO Thin Film for Optoelectronic Device Application. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0122108-062049

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. Huang, Kuang-Hui. Triplexer Transceiver Modules on the Silicon Bench for High-Definition Multimedia Interface(HDMI).

Degree: Master, Electro-Optical Engineering, 2008, NSYSU

 The objective of this thesis is to fabricate a triplexer module based on Si-bench technology for High Definition Multimedia Interface (HDMI). Using V-groove and U-groove… (more)

Subjects/Keywords: 3.125Gbit/s; HDMI; Optical bench

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, K. (2008). Triplexer Transceiver Modules on the Silicon Bench for High-Definition Multimedia Interface(HDMI). (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616108-150616

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Kuang-Hui. “Triplexer Transceiver Modules on the Silicon Bench for High-Definition Multimedia Interface(HDMI).” 2008. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616108-150616.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Kuang-Hui. “Triplexer Transceiver Modules on the Silicon Bench for High-Definition Multimedia Interface(HDMI).” 2008. Web. 26 Apr 2019.

Vancouver:

Huang K. Triplexer Transceiver Modules on the Silicon Bench for High-Definition Multimedia Interface(HDMI). [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616108-150616.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang K. Triplexer Transceiver Modules on the Silicon Bench for High-Definition Multimedia Interface(HDMI). [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616108-150616

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Hung, Chu-Yin. Fabrication and characterization of Transparent Indium oxide thin-film transistors at room temperature.

Degree: Master, Electro-Optical Engineering, 2008, NSYSU

 Transparent InO (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature were demonstrated. The resistivity, transmittance, X-ray diffraction pattern, and… (more)

Subjects/Keywords: TFT; InO

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hung, C. (2008). Fabrication and characterization of Transparent Indium oxide thin-film transistors at room temperature. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616108-221511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hung, Chu-Yin. “Fabrication and characterization of Transparent Indium oxide thin-film transistors at room temperature.” 2008. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616108-221511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hung, Chu-Yin. “Fabrication and characterization of Transparent Indium oxide thin-film transistors at room temperature.” 2008. Web. 26 Apr 2019.

Vancouver:

Hung C. Fabrication and characterization of Transparent Indium oxide thin-film transistors at room temperature. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616108-221511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hung C. Fabrication and characterization of Transparent Indium oxide thin-film transistors at room temperature. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616108-221511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

11. Hsieh, Chih-Shang. Surface Modification of Plastic Substrate by SF6 Plasma.

Degree: Master, Electro-Optical Engineering, 2008, NSYSU

 Plasma surface treatment is an effect method to modify the surface chemistry of a plastic substrate without affecting the nature of the substrate itself .In… (more)

Subjects/Keywords: Surface modification

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsieh, C. (2008). Surface Modification of Plastic Substrate by SF6 Plasma. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620108-121027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsieh, Chih-Shang. “Surface Modification of Plastic Substrate by SF6 Plasma.” 2008. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620108-121027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsieh, Chih-Shang. “Surface Modification of Plastic Substrate by SF6 Plasma.” 2008. Web. 26 Apr 2019.

Vancouver:

Hsieh C. Surface Modification of Plastic Substrate by SF6 Plasma. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620108-121027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsieh C. Surface Modification of Plastic Substrate by SF6 Plasma. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620108-121027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

12. Lin, Yu-Chung. A Simple Package Technique of Light Emitting Diode for Enhancing Illuminant Quality.

Degree: Master, Electro-Optical Engineering, 2008, NSYSU

 The purpose of this thesis is to fabricate an LED module with low half intensity angle(HIA) ,and to use this module to form a line… (more)

Subjects/Keywords: Package; Light Emitting Diode; led

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, Y. (2008). A Simple Package Technique of Light Emitting Diode for Enhancing Illuminant Quality. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620108-022417

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Yu-Chung. “A Simple Package Technique of Light Emitting Diode for Enhancing Illuminant Quality.” 2008. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620108-022417.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Yu-Chung. “A Simple Package Technique of Light Emitting Diode for Enhancing Illuminant Quality.” 2008. Web. 26 Apr 2019.

Vancouver:

Lin Y. A Simple Package Technique of Light Emitting Diode for Enhancing Illuminant Quality. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620108-022417.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Y. A Simple Package Technique of Light Emitting Diode for Enhancing Illuminant Quality. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620108-022417

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

13. Su, Hsuan-Hsiang. Improvement on low-temperature deposited high-k materials by high-pressure treatment.

Degree: Master, Electro-Optical Engineering, 2008, NSYSU

 In this study, high-pressure oxygen (O2 and O3) technologies were employed originally to effectively improve the properties of low-temperature-deposited metal oxide dielectric films. In this… (more)

Subjects/Keywords: high-pressure; high-k; HfO2; ZrO2

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APA (6th Edition):

Su, H. (2008). Improvement on low-temperature deposited high-k materials by high-pressure treatment. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008108-032911

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Su, Hsuan-Hsiang. “Improvement on low-temperature deposited high-k materials by high-pressure treatment.” 2008. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008108-032911.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Su, Hsuan-Hsiang. “Improvement on low-temperature deposited high-k materials by high-pressure treatment.” 2008. Web. 26 Apr 2019.

Vancouver:

Su H. Improvement on low-temperature deposited high-k materials by high-pressure treatment. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008108-032911.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Su H. Improvement on low-temperature deposited high-k materials by high-pressure treatment. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008108-032911

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

14. Lu, I-Jing. Investigation on Reliability and Anomalous Degradation of Low Temperature Poly-Si Thin-Film Transistor.

Degree: Master, Physics, 2009, NSYSU

 In this thesis, we will investigate the degradation of the Low-Temperature-Polycrystalline-Silicon TFTs(LTPS TFTS) under the electrical stress. The devices are offer by Chi Mei Optoelectronics.… (more)

Subjects/Keywords: NBTI; self-heating

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lu, I. (2009). Investigation on Reliability and Anomalous Degradation of Low Temperature Poly-Si Thin-Film Transistor. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0303109-160315

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, I-Jing. “Investigation on Reliability and Anomalous Degradation of Low Temperature Poly-Si Thin-Film Transistor.” 2009. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0303109-160315.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, I-Jing. “Investigation on Reliability and Anomalous Degradation of Low Temperature Poly-Si Thin-Film Transistor.” 2009. Web. 26 Apr 2019.

Vancouver:

Lu I. Investigation on Reliability and Anomalous Degradation of Low Temperature Poly-Si Thin-Film Transistor. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0303109-160315.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu I. Investigation on Reliability and Anomalous Degradation of Low Temperature Poly-Si Thin-Film Transistor. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0303109-160315

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

15. Huang, Shih-Yu. Fabrication and characterization of InOX transparent thin film transistors on plastic substrates.

Degree: Master, Electro-Optical Engineering, 2009, NSYSU

 Transparent InO (Indium oxide) thin-film transistors fabricated by reactive ratio frequency (rf) magnetron sputtering at room temperature were demonstrated on glass and plastic substrates. The… (more)

Subjects/Keywords: sputter; room temperature; plastic; InO TFT

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APA (6th Edition):

Huang, S. (2009). Fabrication and characterization of InOX transparent thin film transistors on plastic substrates. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0619109-181220

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Shih-Yu. “Fabrication and characterization of InOX transparent thin film transistors on plastic substrates.” 2009. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0619109-181220.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Shih-Yu. “Fabrication and characterization of InOX transparent thin film transistors on plastic substrates.” 2009. Web. 26 Apr 2019.

Vancouver:

Huang S. Fabrication and characterization of InOX transparent thin film transistors on plastic substrates. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0619109-181220.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang S. Fabrication and characterization of InOX transparent thin film transistors on plastic substrates. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0619109-181220

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

16. Hsu, Wei-che. Investigation on Electrical Analysis & Reliability Degradation of Low Temperature Poly-Si Thin-Film Transistors.

Degree: Master, Physics, 2009, NSYSU

 In this thesis, we will investigate the mechanism of the degradation on the p-channel Low Temperature Polycrystalline Silicon thin film transistors (LTPS TFTs) under the… (more)

Subjects/Keywords: LTPS

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsu, W. (2009). Investigation on Electrical Analysis & Reliability Degradation of Low Temperature Poly-Si Thin-Film Transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-155237

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsu, Wei-che. “Investigation on Electrical Analysis & Reliability Degradation of Low Temperature Poly-Si Thin-Film Transistors.” 2009. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-155237.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsu, Wei-che. “Investigation on Electrical Analysis & Reliability Degradation of Low Temperature Poly-Si Thin-Film Transistors.” 2009. Web. 26 Apr 2019.

Vancouver:

Hsu W. Investigation on Electrical Analysis & Reliability Degradation of Low Temperature Poly-Si Thin-Film Transistors. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-155237.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsu W. Investigation on Electrical Analysis & Reliability Degradation of Low Temperature Poly-Si Thin-Film Transistors. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-155237

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

17. Liu, Tzu-Chia. Formation of Co-Si-N nanocrystal for nonvolatile memory application.

Degree: Master, Physics, 2009, NSYSU

 Current requirement of nonvolatile memory (NVM) are high density cell, low-power wastage, high speed operation, and good reliability for the scaling down device. In a… (more)

Subjects/Keywords: nonvolatile memory; Co; nanocrystal

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APA (6th Edition):

Liu, T. (2009). Formation of Co-Si-N nanocrystal for nonvolatile memory application. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-164230

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Tzu-Chia. “Formation of Co-Si-N nanocrystal for nonvolatile memory application.” 2009. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-164230.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Tzu-Chia. “Formation of Co-Si-N nanocrystal for nonvolatile memory application.” 2009. Web. 26 Apr 2019.

Vancouver:

Liu T. Formation of Co-Si-N nanocrystal for nonvolatile memory application. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-164230.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu T. Formation of Co-Si-N nanocrystal for nonvolatile memory application. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625109-164230

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

18. Chen, Yu-Ting. Nonvolatile Memory based on NiSi2/SiNX compound nanocrystals.

Degree: Master, Electro-Optical Engineering, 2009, NSYSU

 Current requirements of nonvolatile memory (NVM) are the high density cells, low-power consumption, high-speed operation and good reliability for next-generation NVM application. However, all of… (more)

Subjects/Keywords: NiSi; nanocrystal; compound

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APA (6th Edition):

Chen, Y. (2009). Nonvolatile Memory based on NiSi2/SiNX compound nanocrystals. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626109-155907

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yu-Ting. “Nonvolatile Memory based on NiSi2/SiNX compound nanocrystals.” 2009. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626109-155907.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yu-Ting. “Nonvolatile Memory based on NiSi2/SiNX compound nanocrystals.” 2009. Web. 26 Apr 2019.

Vancouver:

Chen Y. Nonvolatile Memory based on NiSi2/SiNX compound nanocrystals. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626109-155907.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Nonvolatile Memory based on NiSi2/SiNX compound nanocrystals. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626109-155907

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

19. Chen, Jung-hsiang. The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain.

Degree: Master, Physics, 2009, NSYSU

 Abstract The tendency to manufacture of semiconductor is to minimize the size of device. With the size was minimized, the number of transistor on the… (more)

Subjects/Keywords: POWER-MOSFET; Breakdown Voltage; Reliability

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APA (6th Edition):

Chen, J. (2009). The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Jung-hsiang. “The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain.” 2009. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Jung-hsiang. “The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain.” 2009. Web. 26 Apr 2019.

Vancouver:

Chen J. The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen J. The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

20. Li, Cheng-Hua. The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2009, NSYSU

 There are many intensive researches for zinc compounds due to their wide band gaps and potential applications in visible and UV optoelectronic technologies. Zinc nitride… (more)

Subjects/Keywords: zinc nitride; heat treatment; reactive sputtering; p-n junction

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APA (6th Edition):

Li, C. (2009). The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907109-113605

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Cheng-Hua. “The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization.” 2009. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907109-113605.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Cheng-Hua. “The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization.” 2009. Web. 26 Apr 2019.

Vancouver:

Li C. The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907109-113605.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li C. The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907109-113605

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

21. Chuang, Ying-shao. Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT.

Degree: Master, Physics, 2010, NSYSU

 In this work, electrical mechanism of Low Temperature Poly-Si Thin-Film Transistors (LTPS TFTs) and Nonvolatile memory TFTs was investigated. First, relationship between trap states in… (more)

Subjects/Keywords: anomalous capacitance; TFT; GIDL

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APA (6th Edition):

Chuang, Y. (2010). Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623110-155624

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chuang, Ying-shao. “Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT.” 2010. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623110-155624.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chuang, Ying-shao. “Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT.” 2010. Web. 26 Apr 2019.

Vancouver:

Chuang Y. Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT. [Internet] [Thesis]. NSYSU; 2010. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623110-155624.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chuang Y. Electrical mechanism on Low Temperature Polycrystalline Silicon TFT and Nonvolatile memory TFT. [Thesis]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623110-155624

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

22. Chen, Yu-te. Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors.

Degree: Master, Electro-Optical Engineering, 2013, NSYSU

 It is found that the metal-oxide semiconductor such as indium-gallium-zinc-oxide thin film transistor under the high current, high bias, and light illumination operation can cause… (more)

Subjects/Keywords: indium-gallium-zinc-oxide; InGaZnO; hot-carrier; self-heating; thin film transistor; metal-oxide semiconductor; TFT

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APA (6th Edition):

Chen, Y. (2013). Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yu-te. “Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors.” 2013. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yu-te. “Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors.” 2013. Web. 26 Apr 2019.

Vancouver:

Chen Y. Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

23. Liang, Shu-ping. Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2013, NSYSU

 ITO is a transparent conductive film, owning to high transmittance and good electrical conductivity, ITO has been applied in a wide range over touch panel,… (more)

Subjects/Keywords: Transparent conductive film of ITO; SCCO2; Comsol simulation; Resistance Random access memory

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APA (6th Edition):

Liang, S. (2013). Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liang, Shu-ping. “Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode.” 2013. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liang, Shu-ping. “Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode.” 2013. Web. 26 Apr 2019.

Vancouver:

Liang S. Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liang S. Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Yang, Man-Chun. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.

Degree: Master, Electro-Optical Engineering, 2013, NSYSU

 In recent year, the large size and high pixel is need for variously advanced displays. Thus, the stable reliability and standard characteristic is most important… (more)

Subjects/Keywords: indium-gallium-zinc-oxide thin film transistor; UV sensor; light induced instability; high current stress

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yang, M. (2013). Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Man-Chun. “Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.” 2013. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Man-Chun. “Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.” 2013. Web. 26 Apr 2019.

Vancouver:

Yang M. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang M. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

25. Lin, Hong-yang. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.

Degree: Master, Materials and Optoelectronic Science, 2013, NSYSU

 Resistive Random Access Memory (RRAM) is considered as one of the most promising candidate for the next-generation memories due to their excellent properties such as… (more)

Subjects/Keywords: Hafnium Oxide; RRAM; Concentration of Oxygen; Nernst Equation; Energy Dissipation Rate

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, H. (2013). Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Web. 26 Apr 2019.

Vancouver:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

26. Peng, Han-Kuang. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2013, NSYSU

 In this thesis, silicon dioxide (SiO2) doped hafnium oxide (HfO2) is applied to form low-k doped high-k materials, and the multilayer structure is used to… (more)

Subjects/Keywords: RRAM; SiO2; High-K; HfO2; energy dissipation rate; Low-K; critical energy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Peng, H. (2013). Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Peng, Han-Kuang. “Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.” 2013. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Peng, Han-Kuang. “Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.” 2013. Web. 26 Apr 2019.

Vancouver:

Peng H. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Peng H. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

27. You, Bo. Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs.

Degree: Master, Electro-Optical Engineering, 2014, NSYSU

 Transistors with Moore's Law to the number of transistors per unit area of 18 months to grow geometrically, which not only reduces the cost of… (more)

Subjects/Keywords: SOI; Charge Pumping; Random Telegraph Signal; hot carrier stress; double diffused drain

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

You, B. (2014). Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-135842

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

You, Bo. “Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs.” 2014. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-135842.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

You, Bo. “Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs.” 2014. Web. 26 Apr 2019.

Vancouver:

You B. Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-135842.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

You B. Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-135842

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

28. Lin, Kun-Yao. Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays.

Degree: Master, Physics, 2014, NSYSU

 In the first section, we investigate the hot-carrier effect in indiumâgalliumâzinc oxide (IGZO) thin film transistors with symmetric and asymmetric source/drain structures. The different degradation… (more)

Subjects/Keywords: Threshold voltage; charge trapping; Thin Film Transistors; Hot Carrier Effect; InGaZnO; Self-Heating Effect; kick back voltage

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, K. (2014). Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-165953

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Kun-Yao. “Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays.” 2014. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-165953.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Kun-Yao. “Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays.” 2014. Web. 26 Apr 2019.

Vancouver:

Lin K. Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-165953.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin K. Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0518114-165953

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

29. Huang, Kuan-Chi. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.

Degree: Master, Physics, 2014, NSYSU

 In order to clarify the mechanism of reset process in Ti/HfO2/TiN resistive random access memory (RRAM) devices, constant voltage sampling measurements are carried out at… (more)

Subjects/Keywords: complementary resistive switches; indium tin oxide; activation energy; hafnium; resistive random access memory

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, K. (2014). Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Web. 26 Apr 2019.

Vancouver:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

30. Tai, Hui-Wen. Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids.

Degree: Master, Electro-Optical Engineering, 2014, NSYSU

 The aim of this dissertation was to investigate the aging of indium tin oxide (ITO) anodes of organic light-emitting diodes (OLED) treated by supercritical CO2… (more)

Subjects/Keywords: supercritical fluid; organic light-emitting diode; indium tin oxide; work function; surface energy

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APA (6th Edition):

Tai, H. (2014). Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515114-231530

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tai, Hui-Wen. “Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids.” 2014. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515114-231530.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tai, Hui-Wen. “Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids.” 2014. Web. 26 Apr 2019.

Vancouver:

Tai H. Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515114-231530.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tai H. Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515114-231530

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2] [3] [4] [5] [6]

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