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You searched for +publisher:"NSYSU" +contributor:("Jih-Chen Chiang"). Showing records 1 – 30 of 31 total matches.

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NSYSU

1. Yang, Chia-Ching. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.

Degree: Master, Physics, 2008, NSYSU

 We have grown the high quality AlGaN/GaN heterostructure by plasma-assisted molecular beam epitaxy. We obtained the mobility of two-dimensional electron gas of the AlGaN/GaN is… (more)

Subjects/Keywords: focus ion beam; nanowire; metal oxide semiconductor field effect transistor

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yang, C. (2008). Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Chia-Ching. “Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.” 2008. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Chia-Ching. “Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.” 2008. Web. 22 Sep 2019.

Vancouver:

Yang C. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Chen, Chi-hon. Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field.

Degree: Master, Physics, 2008, NSYSU

 We measured the electronic properties of Two Dimensional Electron Gas in AlxGa1-xN/GaN ï¼x=0.18ï¼heterostructures at low temperature and high magnetic field by Shubnikov-de Hass(SdH) for different… (more)

Subjects/Keywords: PPC effect

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APA (6th Edition):

Chen, C. (2008). Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-122419

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Chi-hon. “Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field.” 2008. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-122419.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Chi-hon. “Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field.” 2008. Web. 22 Sep 2019.

Vancouver:

Chen C. Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-122419.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen C. Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-122419

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

3. Chiu, Wan-ting. Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field.

Degree: Master, Physics, 2008, NSYSU

 We have studied the electronic properties of InGaAs/AlInAs nano wire by using Shubnikov-de Hass (SdH)measurement at 0.3K.In order to study the effect of the channel… (more)

Subjects/Keywords: SdH; 2DEG; InGaAs

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APA (6th Edition):

Chiu, W. (2008). Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-185757

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chiu, Wan-ting. “Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field.” 2008. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-185757.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chiu, Wan-ting. “Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field.” 2008. Web. 22 Sep 2019.

Vancouver:

Chiu W. Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-185757.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chiu W. Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-185757

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

4. Hsin Lin, Wei. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.

Degree: Master, Physics, 2008, NSYSU

 We have fabricated the device of High Electron Mobility Transistor(HEMT) on Al0.18Ga0.82N/GaN heterostructures. The mobility of 2DEG of the AlGaN/GaN is 9328 cm2/Vs and carrier… (more)

Subjects/Keywords: SdH; AlGaN; GaN; 2DEG

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsin Lin, W. (2008). Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsin Lin, Wei. “Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.” 2008. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsin Lin, Wei. “Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.” 2008. Web. 22 Sep 2019.

Vancouver:

Hsin Lin W. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsin Lin W. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

5. Chen, Yu-chih. Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE.

Degree: Master, Physics, 2009, NSYSU

 In order to develop high speed photo-electronic device, first, we grew one layer of GaN by MOPVE to decline lattice mismatch. Then we used PA-MBE… (more)

Subjects/Keywords: AlGaN/GaN; Low Temperature Hall Measurement; PA-MBE

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, Y. (2009). Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yu-chih. “Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE.” 2009. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yu-chih. “Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE.” 2009. Web. 22 Sep 2019.

Vancouver:

Chen Y. Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Jhuang, Shin-Hong. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.

Degree: Master, Physics, 2009, NSYSU

 In this thesis, we study the magnetro-transport properties of Fe-doped AlxGa1-xN/GaN heterostructure with different Al content by Shubnikov-de Haas measurements. On the samples KTH640(x=0.294)ãKTH643(x=0.344)ãKTH642(x=0.390)ãKTH644 (x=0.397),… (more)

Subjects/Keywords: SdH; GaN; AlGaN

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jhuang, S. (2009). Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jhuang, Shin-Hong. “Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.” 2009. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jhuang, Shin-Hong. “Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.” 2009. Web. 22 Sep 2019.

Vancouver:

Jhuang S. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jhuang S. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Wang, Ying-chieh. Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field.

Degree: Master, Physics, 2009, NSYSU

 We discussed the electronic properties in AlxGa1-xN/GaN heterostructures. There are six different samples of AlxGa1-xN/GaN we prepared for this experiment, three of them are undoped… (more)

Subjects/Keywords: Hall effect; 2DEG; GaN; SdH

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, Y. (2009). Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Ying-chieh. “Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field.” 2009. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Ying-chieh. “Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field.” 2009. Web. 22 Sep 2019.

Vancouver:

Wang Y. Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang Y. Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

8. Hu, Chia-hsuan. Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE.

Degree: Master, Physics, 2009, NSYSU

 We invistegated the characteristic of GaN nanostructure grown onγ-LiAlO2 substrate by molecular epitaxy beam. We observed the c-plane GaN pillar and M-plane GaN terraces assembled… (more)

Subjects/Keywords: c-plane; GaN; M-plane

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APA (6th Edition):

Hu, C. (2009). Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hu, Chia-hsuan. “Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE.” 2009. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hu, Chia-hsuan. “Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE.” 2009. Web. 22 Sep 2019.

Vancouver:

Hu C. Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hu C. Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. Chang, Yung-Shi. Study of AlGaN/GaN quantum structure fabricated by Focus ion beam.

Degree: Master, Physics, 2009, NSYSU

 We have observed a large spin-splitting in device made of AlxGa1-xN/GaN quantum wires. Based on this observation, we proposed a new spintronic application, the spin-hall… (more)

Subjects/Keywords: Focused Ion Beam; Quantum-ring; Spin-Hall; AlGaN; GaN

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chang, Y. (2009). Study of AlGaN/GaN quantum structure fabricated by Focus ion beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Yung-Shi. “Study of AlGaN/GaN quantum structure fabricated by Focus ion beam.” 2009. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Yung-Shi. “Study of AlGaN/GaN quantum structure fabricated by Focus ion beam.” 2009. Web. 22 Sep 2019.

Vancouver:

Chang Y. Study of AlGaN/GaN quantum structure fabricated by Focus ion beam. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang Y. Study of AlGaN/GaN quantum structure fabricated by Focus ion beam. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Gau, Ming-Horng. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.

Degree: PhD, Physics, 2009, NSYSU

 The design, fabrication, and characterizations of the spin-polarized AlxGa1-xN/GaN HEMT structure have been achieved for spintronic application. By band calculation within linear combination of atomic… (more)

Subjects/Keywords: GaN; AlGaN; 2DEG; MOVPE; MBE; HEMT; SdH; spin-splitting; spintronics; LCAO

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gau, M. (2009). Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631

Chicago Manual of Style (16th Edition):

Gau, Ming-Horng. “Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.” 2009. Doctoral Dissertation, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631.

MLA Handbook (7th Edition):

Gau, Ming-Horng. “Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.” 2009. Web. 22 Sep 2019.

Vancouver:

Gau M. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. [Internet] [Doctoral dissertation]. NSYSU; 2009. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631.

Council of Science Editors:

Gau M. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. [Doctoral Dissertation]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631


NSYSU

11. Wang, Wan-Tsang. Rashba and Dresselhaus Effect in Wurtzite Materials, and it's application.

Degree: PhD, Physics, 2010, NSYSU

 The spin-splitting energy in wurtzite structure semiconductors had been investigated by linear combination of atomic orbital method (LCAO), atomic bond orbital method and two-band kâ¢p… (more)

Subjects/Keywords: Rashba; spin splitting; Dresselhaus; wurtzite

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APA (6th Edition):

Wang, W. (2010). Rashba and Dresselhaus Effect in Wurtzite Materials, and it's application. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0208110-132907

Chicago Manual of Style (16th Edition):

Wang, Wan-Tsang. “Rashba and Dresselhaus Effect in Wurtzite Materials, and it's application.” 2010. Doctoral Dissertation, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0208110-132907.

MLA Handbook (7th Edition):

Wang, Wan-Tsang. “Rashba and Dresselhaus Effect in Wurtzite Materials, and it's application.” 2010. Web. 22 Sep 2019.

Vancouver:

Wang W. Rashba and Dresselhaus Effect in Wurtzite Materials, and it's application. [Internet] [Doctoral dissertation]. NSYSU; 2010. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0208110-132907.

Council of Science Editors:

Wang W. Rashba and Dresselhaus Effect in Wurtzite Materials, and it's application. [Doctoral Dissertation]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0208110-132907


NSYSU

12. Chuang, Keng-Lin. Investigation of GaN semiconductor using Hall measurement.

Degree: Master, Physics, 2003, NSYSU

 In the study we employ Hall measurements to analyze that the GaN semiconductor by MBE. In the study we analyze the parameters of low temperature… (more)

Subjects/Keywords: Hall

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chuang, K. (2003). Investigation of GaN semiconductor using Hall measurement. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723103-113928

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chuang, Keng-Lin. “Investigation of GaN semiconductor using Hall measurement.” 2003. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723103-113928.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chuang, Keng-Lin. “Investigation of GaN semiconductor using Hall measurement.” 2003. Web. 22 Sep 2019.

Vancouver:

Chuang K. Investigation of GaN semiconductor using Hall measurement. [Internet] [Thesis]. NSYSU; 2003. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723103-113928.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chuang K. Investigation of GaN semiconductor using Hall measurement. [Thesis]. NSYSU; 2003. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723103-113928

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

13. Chang, Chun-Chin. Valence-Conduction Band Mixing Effect In Type-â¡ Superlattice.

Degree: Master, Physics, 2002, NSYSU

 We study the electronic band structure of bulk within a six-band bond-orbital model. All interaction parameters of this model involved are directly related to parameters… (more)

Subjects/Keywords: mixing effect

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APA (6th Edition):

Chang, C. (2002). Valence-Conduction Band Mixing Effect In Type-â¡ Superlattice. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617102-131550

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Chun-Chin. “Valence-Conduction Band Mixing Effect In Type-â¡ Superlattice.” 2002. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617102-131550.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Chun-Chin. “Valence-Conduction Band Mixing Effect In Type-â¡ Superlattice.” 2002. Web. 22 Sep 2019.

Vancouver:

Chang C. Valence-Conduction Band Mixing Effect In Type-â¡ Superlattice. [Internet] [Thesis]. NSYSU; 2002. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617102-131550.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang C. Valence-Conduction Band Mixing Effect In Type-â¡ Superlattice. [Thesis]. NSYSU; 2002. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617102-131550

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

14. Pang, Wen-Yuan. Characterization of GaN grown on LiAlO2 by molecular epitaxy beam.

Degree: Master, Physics, 2007, NSYSU

 We invistegated the characteristic of GaN grown on LiAlO2 substrate by molecular epitaxy beam. We observed the c-plane GaN crystalls assembled at the step-edge of… (more)

Subjects/Keywords: GaN; LiAlO2; MBE

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pang, W. (2007). Characterization of GaN grown on LiAlO2 by molecular epitaxy beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pang, Wen-Yuan. “Characterization of GaN grown on LiAlO2 by molecular epitaxy beam.” 2007. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pang, Wen-Yuan. “Characterization of GaN grown on LiAlO2 by molecular epitaxy beam.” 2007. Web. 22 Sep 2019.

Vancouver:

Pang W. Characterization of GaN grown on LiAlO2 by molecular epitaxy beam. [Internet] [Thesis]. NSYSU; 2007. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pang W. Characterization of GaN grown on LiAlO2 by molecular epitaxy beam. [Thesis]. NSYSU; 2007. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

15. Chang, Yao-i. Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy.

Degree: Master, Physics, 2007, NSYSU

 We mainly studied the morphology of GaN structures which were grown by plasma-assisted molecular beam epitaxy. The only condition we changed is Ga/N Ratio. Based… (more)

Subjects/Keywords: GaN; SEM; MBE

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APA (6th Edition):

Chang, Y. (2007). Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Yao-i. “Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy.” 2007. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Yao-i. “Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy.” 2007. Web. 22 Sep 2019.

Vancouver:

Chang Y. Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy. [Internet] [Thesis]. NSYSU; 2007. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang Y. Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy. [Thesis]. NSYSU; 2007. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

16. Hsieh, Kun-lin. Use Linear Combination of Atomic Orbital Models to Study Wurtzite Semiconductor Band Structure.

Degree: Master, Physics, 2006, NSYSU

 A simple theoretical method for calculating electronic band structure of wurtzite materials based on the linear combination of orbital model is presented. To abtain better… (more)

Subjects/Keywords: linear combination of atomic orbital model; wurtzite structure

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsieh, K. (2006). Use Linear Combination of Atomic Orbital Models to Study Wurtzite Semiconductor Band Structure. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0124106-150154

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsieh, Kun-lin. “Use Linear Combination of Atomic Orbital Models to Study Wurtzite Semiconductor Band Structure.” 2006. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0124106-150154.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsieh, Kun-lin. “Use Linear Combination of Atomic Orbital Models to Study Wurtzite Semiconductor Band Structure.” 2006. Web. 22 Sep 2019.

Vancouver:

Hsieh K. Use Linear Combination of Atomic Orbital Models to Study Wurtzite Semiconductor Band Structure. [Internet] [Thesis]. NSYSU; 2006. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0124106-150154.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsieh K. Use Linear Combination of Atomic Orbital Models to Study Wurtzite Semiconductor Band Structure. [Thesis]. NSYSU; 2006. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0124106-150154

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

17. Yu, Chien-Pang. Process and analysis of nano wire in InGaAs/AlInAs by focused ion beam.

Degree: Master, Physics, 2006, NSYSU

 On InGaAs/AlInAs heterostructures we made nanowires which were made by focus ion beam (FIB) and the width of nanowires making by FIB were 40nmã70nmã100nm and… (more)

Subjects/Keywords: focused ion beam; nanowires; FIB

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yu, C. (2006). Process and analysis of nano wire in InGaAs/AlInAs by focused ion beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719106-215754

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yu, Chien-Pang. “Process and analysis of nano wire in InGaAs/AlInAs by focused ion beam.” 2006. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719106-215754.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yu, Chien-Pang. “Process and analysis of nano wire in InGaAs/AlInAs by focused ion beam.” 2006. Web. 22 Sep 2019.

Vancouver:

Yu C. Process and analysis of nano wire in InGaAs/AlInAs by focused ion beam. [Internet] [Thesis]. NSYSU; 2006. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719106-215754.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yu C. Process and analysis of nano wire in InGaAs/AlInAs by focused ion beam. [Thesis]. NSYSU; 2006. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719106-215754

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

18. Chang, Zhi-jie. Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field.

Degree: Master, Physics, 2006, NSYSU

 We have studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikovâde Haas(SdH) measurement. Two SdH oscillations were detected on the sample of x=0.31, due… (more)

Subjects/Keywords: SdH; GaN; 2DEG; AlGaN; Hall

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APA (6th Edition):

Chang, Z. (2006). Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-002050

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Zhi-jie. “Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field.” 2006. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-002050.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Zhi-jie. “Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field.” 2006. Web. 22 Sep 2019.

Vancouver:

Chang Z. Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field. [Internet] [Thesis]. NSYSU; 2006. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-002050.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang Z. Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field. [Thesis]. NSYSU; 2006. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-002050

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

19. Chang, Hsien-Cheng. Investigation of AlGaN/GaN Heterostructure Using Photoluminescence.

Degree: Master, Physics, 2007, NSYSU

 We study AlGaN/GaN heterostucture using temperature dependent micro-photoluminescence. Detailing its principle, operation process and analysis is to provide usage experiences for posterity's reference. The experiment's… (more)

Subjects/Keywords: GaN; Heterostructure; PL; Photoluminescence

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APA (6th Edition):

Chang, H. (2007). Investigation of AlGaN/GaN Heterostructure Using Photoluminescence. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702107-181047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Hsien-Cheng. “Investigation of AlGaN/GaN Heterostructure Using Photoluminescence.” 2007. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702107-181047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Hsien-Cheng. “Investigation of AlGaN/GaN Heterostructure Using Photoluminescence.” 2007. Web. 22 Sep 2019.

Vancouver:

Chang H. Investigation of AlGaN/GaN Heterostructure Using Photoluminescence. [Internet] [Thesis]. NSYSU; 2007. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702107-181047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang H. Investigation of AlGaN/GaN Heterostructure Using Photoluminescence. [Thesis]. NSYSU; 2007. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702107-181047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

20. Huang, Hsin-Hsiung. Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy.

Degree: Master, Physics, 2004, NSYSU

 As the device size getting nanoscale, quantum dot structure had become one kind of new method of semiconductor manufacturing technology. In this thesis, two series… (more)

Subjects/Keywords: quantum dots; MBE; InN

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APA (6th Edition):

Huang, H. (2004). Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-014119

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Hsin-Hsiung. “Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy.” 2004. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-014119.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Hsin-Hsiung. “Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy.” 2004. Web. 22 Sep 2019.

Vancouver:

Huang H. Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-014119.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang H. Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-014119

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

21. Wang, Wan-Tsang. Use Bond-Orbital Models to Study Wurtzite Semiconductor Band Structures.

Degree: Master, Physics, 2004, NSYSU

 A simple theoretical method for calculating electronic band structures of wurtzite materials based on the bond-orbital models is presented. This method can be used to… (more)

Subjects/Keywords: wurtzite structure; bond-orbital models

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, W. (2004). Use Bond-Orbital Models to Study Wurtzite Semiconductor Band Structures. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708104-145935

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Wan-Tsang. “Use Bond-Orbital Models to Study Wurtzite Semiconductor Band Structures.” 2004. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708104-145935.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Wan-Tsang. “Use Bond-Orbital Models to Study Wurtzite Semiconductor Band Structures.” 2004. Web. 22 Sep 2019.

Vancouver:

Wang W. Use Bond-Orbital Models to Study Wurtzite Semiconductor Band Structures. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708104-145935.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang W. Use Bond-Orbital Models to Study Wurtzite Semiconductor Band Structures. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708104-145935

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

22. Wu, Chieh-lung. The Time-Resolved Photoluminescence Study of InN Film and InAs/GaAs QDs.

Degree: Master, Physics, 2004, NSYSU

 Abstract We have extended the spectral range of the current PL-upconversion apparatus to be operated in infrared. Using the IRPL-upconversionï¼we study the behavior of carrier… (more)

Subjects/Keywords: InAs/GaAs QDs; carrier cooling; time-resolved photoluminescence; InN

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APA (6th Edition):

Wu, C. (2004). The Time-Resolved Photoluminescence Study of InN Film and InAs/GaAs QDs. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-221732

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Chieh-lung. “The Time-Resolved Photoluminescence Study of InN Film and InAs/GaAs QDs.” 2004. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-221732.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Chieh-lung. “The Time-Resolved Photoluminescence Study of InN Film and InAs/GaAs QDs.” 2004. Web. 22 Sep 2019.

Vancouver:

Wu C. The Time-Resolved Photoluminescence Study of InN Film and InAs/GaAs QDs. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-221732.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu C. The Time-Resolved Photoluminescence Study of InN Film and InAs/GaAs QDs. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-221732

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

23. Fan, Ni-wan. Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD.

Degree: PhD, Physics, 2004, NSYSU

 We discuss the PL spectra of the InN band gap. The InN thin film epitaxy grows on both Si (111) and sapphire (0001) by the… (more)

Subjects/Keywords: InN; PA-MBE

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fan, N. (2004). Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803

Chicago Manual of Style (16th Edition):

Fan, Ni-wan. “Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD.” 2004. Doctoral Dissertation, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803.

MLA Handbook (7th Edition):

Fan, Ni-wan. “Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD.” 2004. Web. 22 Sep 2019.

Vancouver:

Fan N. Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD. [Internet] [Doctoral dissertation]. NSYSU; 2004. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803.

Council of Science Editors:

Fan N. Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD. [Doctoral Dissertation]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803


NSYSU

24. Chen, Kuang-yao. Characterization of GaN/AlGaN heterostructures grown by molecular beam epitaxy.

Degree: Master, Physics, 2005, NSYSU

 We mainly studied the characterization of GaN/AlGaN heterostructures which were grown by molecular beam epitaxy. For reduced lattice mismatch, we inserted AlN as buffer layer.… (more)

Subjects/Keywords: heterostructures; Hall effect; GaN; AlGaN; polarization

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, K. (2005). Characterization of GaN/AlGaN heterostructures grown by molecular beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705105-171831

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Kuang-yao. “Characterization of GaN/AlGaN heterostructures grown by molecular beam epitaxy.” 2005. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705105-171831.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Kuang-yao. “Characterization of GaN/AlGaN heterostructures grown by molecular beam epitaxy.” 2005. Web. 22 Sep 2019.

Vancouver:

Chen K. Characterization of GaN/AlGaN heterostructures grown by molecular beam epitaxy. [Internet] [Thesis]. NSYSU; 2005. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705105-171831.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen K. Characterization of GaN/AlGaN heterostructures grown by molecular beam epitaxy. [Thesis]. NSYSU; 2005. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705105-171831

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

25. Chen, Jyun-fan. Electronic properties of δ-doped InxGa1-xAs/InAlAs Quantum wells.

Degree: Master, Physics, 2005, NSYSU

 We have studied the electronic properties of InxGa1-xAs/ In0.52Al0.48As quantum wells by using Shubnickove-de Hass (SdH) measurement. The indium composition (x) of well layers was… (more)

Subjects/Keywords: 2DEG; quantum wells; SdH; InGaAs/InAlAs; Hall.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, J. (2005). Electronic properties of δ-doped InxGa1-xAs/InAlAs Quantum wells. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706105-032903

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Jyun-fan. “Electronic properties of δ-doped InxGa1-xAs/InAlAs Quantum wells.” 2005. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706105-032903.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Jyun-fan. “Electronic properties of δ-doped InxGa1-xAs/InAlAs Quantum wells.” 2005. Web. 22 Sep 2019.

Vancouver:

Chen J. Electronic properties of δ-doped InxGa1-xAs/InAlAs Quantum wells. [Internet] [Thesis]. NSYSU; 2005. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706105-032903.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen J. Electronic properties of δ-doped InxGa1-xAs/InAlAs Quantum wells. [Thesis]. NSYSU; 2005. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706105-032903

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

26. Chou, Shu-Ting. Investigation of SiOxNy Thin Films with Photoluminescence, Raman, and Capacitance-Voltage Measurements.

Degree: Master, Physics, 2003, NSYSU

 ABSTRACT As MOSFET getting smaller, its silicon dioxide reaches physical limit. To continue its insulation and reasonable interface defects density, now, SiOxNy is the replace… (more)

Subjects/Keywords: C-V; SiON; PL; Raman

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chou, S. (2003). Investigation of SiOxNy Thin Films with Photoluminescence, Raman, and Capacitance-Voltage Measurements. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616103-234345

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chou, Shu-Ting. “Investigation of SiOxNy Thin Films with Photoluminescence, Raman, and Capacitance-Voltage Measurements.” 2003. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616103-234345.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chou, Shu-Ting. “Investigation of SiOxNy Thin Films with Photoluminescence, Raman, and Capacitance-Voltage Measurements.” 2003. Web. 22 Sep 2019.

Vancouver:

Chou S. Investigation of SiOxNy Thin Films with Photoluminescence, Raman, and Capacitance-Voltage Measurements. [Internet] [Thesis]. NSYSU; 2003. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616103-234345.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chou S. Investigation of SiOxNy Thin Films with Photoluminescence, Raman, and Capacitance-Voltage Measurements. [Thesis]. NSYSU; 2003. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616103-234345

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

27. Tsai, Jenn-Kai. Growth and characterization of wide bandgap GaN semiconductor.

Degree: PhD, Physics, 2003, NSYSU

 Veeco Applied EPI 930 molecular beam epitaxy system equipped with a radio frequency plasma assisted nitrogen source has been introduced and the growth procedure and… (more)

Subjects/Keywords: buffer layer; epilayer; GaN; piezoelectric effect; MBE; nitridation; spin splitting

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tsai, J. (2003). Growth and characterization of wide bandgap GaN semiconductor. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728103-211118

Chicago Manual of Style (16th Edition):

Tsai, Jenn-Kai. “Growth and characterization of wide bandgap GaN semiconductor.” 2003. Doctoral Dissertation, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728103-211118.

MLA Handbook (7th Edition):

Tsai, Jenn-Kai. “Growth and characterization of wide bandgap GaN semiconductor.” 2003. Web. 22 Sep 2019.

Vancouver:

Tsai J. Growth and characterization of wide bandgap GaN semiconductor. [Internet] [Doctoral dissertation]. NSYSU; 2003. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728103-211118.

Council of Science Editors:

Tsai J. Growth and characterization of wide bandgap GaN semiconductor. [Doctoral Dissertation]. NSYSU; 2003. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728103-211118


NSYSU

28. Yeh, Ying-Chou. The Ultrafast Time-resolved Photoluminescence study of ZnTe/ZnSe Quantum Dots.

Degree: Master, Physics, 2004, NSYSU

 The carrier capture and relaxation of Type II ZnTe/ZnSe quantum dots(QDs) were investigated with ultrafast photoluminescence upconversion. We found that carrier relaxation of QDs under… (more)

Subjects/Keywords: upconversion; time-resolved PL; ZnTe; wetting layer; quantum dots

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yeh, Y. (2004). The Ultrafast Time-resolved Photoluminescence study of ZnTe/ZnSe Quantum Dots. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714104-152639

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yeh, Ying-Chou. “The Ultrafast Time-resolved Photoluminescence study of ZnTe/ZnSe Quantum Dots.” 2004. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714104-152639.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yeh, Ying-Chou. “The Ultrafast Time-resolved Photoluminescence study of ZnTe/ZnSe Quantum Dots.” 2004. Web. 22 Sep 2019.

Vancouver:

Yeh Y. The Ultrafast Time-resolved Photoluminescence study of ZnTe/ZnSe Quantum Dots. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714104-152639.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yeh Y. The Ultrafast Time-resolved Photoluminescence study of ZnTe/ZnSe Quantum Dots. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714104-152639

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

29. Chung, Yung-Hsien. Study of Carrier Cooling in Zn0.91Cd0.09Se/ZnSe Multiple Quantum Wells.

Degree: Master, Physics, 2004, NSYSU

 The hot carrier dynamics of Zn0.91Cd0.09Se/ZnSe multi-quantum wells were studied using the femtosecond time-resolved photoluminescence upconversion technique. The carrier cooling behavior was investigated for different… (more)

Subjects/Keywords: TRPL; ZnSe; quantum well; upconversion; carrier cooling; ZnCdSe; II-VI

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chung, Y. (2004). Study of Carrier Cooling in Zn0.91Cd0.09Se/ZnSe Multiple Quantum Wells. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714104-171109

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chung, Yung-Hsien. “Study of Carrier Cooling in Zn0.91Cd0.09Se/ZnSe Multiple Quantum Wells.” 2004. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714104-171109.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chung, Yung-Hsien. “Study of Carrier Cooling in Zn0.91Cd0.09Se/ZnSe Multiple Quantum Wells.” 2004. Web. 22 Sep 2019.

Vancouver:

Chung Y. Study of Carrier Cooling in Zn0.91Cd0.09Se/ZnSe Multiple Quantum Wells. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714104-171109.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chung Y. Study of Carrier Cooling in Zn0.91Cd0.09Se/ZnSe Multiple Quantum Wells. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714104-171109

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

30. Shih, Chia-Chi. The study of phase transition of liquid crystal in a coupled XY model.

Degree: PhD, Physics, 2005, NSYSU

 Abstract In this study, we employed the Monte Carlo simulation method to investigate the q-state coupled XY model based on the Landau free energy of… (more)

Subjects/Keywords: coupled XY model; phase transition; Smectic phase; Monte Carlo simulation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Shih, C. (2005). The study of phase transition of liquid crystal in a coupled XY model. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0622105-170302

Chicago Manual of Style (16th Edition):

Shih, Chia-Chi. “The study of phase transition of liquid crystal in a coupled XY model.” 2005. Doctoral Dissertation, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0622105-170302.

MLA Handbook (7th Edition):

Shih, Chia-Chi. “The study of phase transition of liquid crystal in a coupled XY model.” 2005. Web. 22 Sep 2019.

Vancouver:

Shih C. The study of phase transition of liquid crystal in a coupled XY model. [Internet] [Doctoral dissertation]. NSYSU; 2005. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0622105-170302.

Council of Science Editors:

Shih C. The study of phase transition of liquid crystal in a coupled XY model. [Doctoral Dissertation]. NSYSU; 2005. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0622105-170302

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