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You searched for +publisher:"NSYSU" +contributor:("IKai Lo"). Showing records 1 – 30 of 71 total matches.

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NSYSU

1. Wu, Nien-Chen. The growth of high quality M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy.

Degree: Master, Physics, 2016, NSYSU

 In this thesis, we studied the growth of high quality M-plane GaN thin film on LiGaOâ (100) substrate by Plasma-Assisted Molecular Beam Epitaxy. The scanning… (more)

Subjects/Keywords: M-plane GaN; ï¢-LiGaO2(100); Molecular beam epitaxy; AFM; XRD

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wu, N. (2016). The growth of high quality M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627116-093853

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Nien-Chen. “The growth of high quality M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy.” 2016. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627116-093853.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Nien-Chen. “The growth of high quality M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy.” 2016. Web. 20 Oct 2019.

Vancouver:

Wu N. The growth of high quality M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627116-093853.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu N. The growth of high quality M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627116-093853

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Kung, Po-Cheng. ZnO/Ga2O3 Superlattice Thin Films: Growth by Atomic Layer Deposition and Characterizations of Physical Properties.

Degree: Master, Physics, 2017, NSYSU

 The effects of cooldown Ga oxidation are reported on the structural, optical, and temperature vapor pressure properties of c-plane ZnO thin films grown on c-plane… (more)

Subjects/Keywords: ZnO; GaO; Superlattice; Photoluminescence; X-ray Reflectivity; Atomic Layer Deposition

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APA (6th Edition):

Kung, P. (2017). ZnO/Ga2O3 Superlattice Thin Films: Growth by Atomic Layer Deposition and Characterizations of Physical Properties. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0814117-045903

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kung, Po-Cheng. “ZnO/Ga2O3 Superlattice Thin Films: Growth by Atomic Layer Deposition and Characterizations of Physical Properties.” 2017. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0814117-045903.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kung, Po-Cheng. “ZnO/Ga2O3 Superlattice Thin Films: Growth by Atomic Layer Deposition and Characterizations of Physical Properties.” 2017. Web. 20 Oct 2019.

Vancouver:

Kung P. ZnO/Ga2O3 Superlattice Thin Films: Growth by Atomic Layer Deposition and Characterizations of Physical Properties. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0814117-045903.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kung P. ZnO/Ga2O3 Superlattice Thin Films: Growth by Atomic Layer Deposition and Characterizations of Physical Properties. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0814117-045903

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

3. Hong, Yu-Syuan. ZnO/MoO3 Superlattice Thin Films : Growth by Atomic Layer Deposition and Characterizations of Physical Properties.

Degree: Master, Physics, 2017, NSYSU

 Superlattices of ZnO/MoO3 have been prepared by atomic layer deposition (ALD) on a-oriented sapphire substrates at 177 °C. The electrical properties were studied via measurement… (more)

Subjects/Keywords: ALD; ZnO; MoO3; Superlattices; Thermal activation energy; Magnetic moment.

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APA (6th Edition):

Hong, Y. (2017). ZnO/MoO3 Superlattice Thin Films : Growth by Atomic Layer Deposition and Characterizations of Physical Properties. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811117-110855

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hong, Yu-Syuan. “ZnO/MoO3 Superlattice Thin Films : Growth by Atomic Layer Deposition and Characterizations of Physical Properties.” 2017. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811117-110855.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hong, Yu-Syuan. “ZnO/MoO3 Superlattice Thin Films : Growth by Atomic Layer Deposition and Characterizations of Physical Properties.” 2017. Web. 20 Oct 2019.

Vancouver:

Hong Y. ZnO/MoO3 Superlattice Thin Films : Growth by Atomic Layer Deposition and Characterizations of Physical Properties. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811117-110855.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hong Y. ZnO/MoO3 Superlattice Thin Films : Growth by Atomic Layer Deposition and Characterizations of Physical Properties. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811117-110855

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

4. Yang, Chia-Ching. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.

Degree: Master, Physics, 2008, NSYSU

 We have grown the high quality AlGaN/GaN heterostructure by plasma-assisted molecular beam epitaxy. We obtained the mobility of two-dimensional electron gas of the AlGaN/GaN is… (more)

Subjects/Keywords: focus ion beam; nanowire; metal oxide semiconductor field effect transistor

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APA (6th Edition):

Yang, C. (2008). Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Chia-Ching. “Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.” 2008. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Chia-Ching. “Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.” 2008. Web. 20 Oct 2019.

Vancouver:

Yang C. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

5. Chen, Chi-hon. Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field.

Degree: Master, Physics, 2008, NSYSU

 We measured the electronic properties of Two Dimensional Electron Gas in AlxGa1-xN/GaN ï¼x=0.18ï¼heterostructures at low temperature and high magnetic field by Shubnikov-de Hass(SdH) for different… (more)

Subjects/Keywords: PPC effect

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APA (6th Edition):

Chen, C. (2008). Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-122419

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Chi-hon. “Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field.” 2008. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-122419.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Chi-hon. “Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field.” 2008. Web. 20 Oct 2019.

Vancouver:

Chen C. Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-122419.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen C. Size effect on AlxGa1-xN/GaN nanowire at low temperature and high magnetic field. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-122419

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Chiu, Wan-ting. Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field.

Degree: Master, Physics, 2008, NSYSU

 We have studied the electronic properties of InGaAs/AlInAs nano wire by using Shubnikov-de Hass (SdH)measurement at 0.3K.In order to study the effect of the channel… (more)

Subjects/Keywords: SdH; 2DEG; InGaAs

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chiu, W. (2008). Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-185757

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chiu, Wan-ting. “Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field.” 2008. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-185757.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chiu, Wan-ting. “Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field.” 2008. Web. 20 Oct 2019.

Vancouver:

Chiu W. Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-185757.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chiu W. Transport studies of two-dimensional electron gas in InGaAs/AlInAs nano wire at low-temperature and high magnetic field. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-185757

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Hsin Lin, Wei. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.

Degree: Master, Physics, 2008, NSYSU

 We have fabricated the device of High Electron Mobility Transistor(HEMT) on Al0.18Ga0.82N/GaN heterostructures. The mobility of 2DEG of the AlGaN/GaN is 9328 cm2/Vs and carrier… (more)

Subjects/Keywords: SdH; AlGaN; GaN; 2DEG

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsin Lin, W. (2008). Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsin Lin, Wei. “Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.” 2008. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsin Lin, Wei. “Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.” 2008. Web. 20 Oct 2019.

Vancouver:

Hsin Lin W. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsin Lin W. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

8. Chen, Yu-chih. Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE.

Degree: Master, Physics, 2009, NSYSU

 In order to develop high speed photo-electronic device, first, we grew one layer of GaN by MOPVE to decline lattice mismatch. Then we used PA-MBE… (more)

Subjects/Keywords: AlGaN/GaN; Low Temperature Hall Measurement; PA-MBE

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APA (6th Edition):

Chen, Y. (2009). Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yu-chih. “Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE.” 2009. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yu-chih. “Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE.” 2009. Web. 20 Oct 2019.

Vancouver:

Chen Y. Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. Jhuang, Shin-Hong. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.

Degree: Master, Physics, 2009, NSYSU

 In this thesis, we study the magnetro-transport properties of Fe-doped AlxGa1-xN/GaN heterostructure with different Al content by Shubnikov-de Haas measurements. On the samples KTH640(x=0.294)ãKTH643(x=0.344)ãKTH642(x=0.390)ãKTH644 (x=0.397),… (more)

Subjects/Keywords: SdH; GaN; AlGaN

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jhuang, S. (2009). Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jhuang, Shin-Hong. “Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.” 2009. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jhuang, Shin-Hong. “Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.” 2009. Web. 20 Oct 2019.

Vancouver:

Jhuang S. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jhuang S. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Wang, Ying-chieh. Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field.

Degree: Master, Physics, 2009, NSYSU

 We discussed the electronic properties in AlxGa1-xN/GaN heterostructures. There are six different samples of AlxGa1-xN/GaN we prepared for this experiment, three of them are undoped… (more)

Subjects/Keywords: Hall effect; 2DEG; GaN; SdH

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, Y. (2009). Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Ying-chieh. “Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field.” 2009. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Ying-chieh. “Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field.” 2009. Web. 20 Oct 2019.

Vancouver:

Wang Y. Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang Y. Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

11. Hu, Chia-hsuan. Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE.

Degree: Master, Physics, 2009, NSYSU

 We invistegated the characteristic of GaN nanostructure grown onγ-LiAlO2 substrate by molecular epitaxy beam. We observed the c-plane GaN pillar and M-plane GaN terraces assembled… (more)

Subjects/Keywords: c-plane; GaN; M-plane

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APA (6th Edition):

Hu, C. (2009). Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hu, Chia-hsuan. “Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE.” 2009. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hu, Chia-hsuan. “Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE.” 2009. Web. 20 Oct 2019.

Vancouver:

Hu C. Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hu C. Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

12. Chang, Yung-Shi. Study of AlGaN/GaN quantum structure fabricated by Focus ion beam.

Degree: Master, Physics, 2009, NSYSU

 We have observed a large spin-splitting in device made of AlxGa1-xN/GaN quantum wires. Based on this observation, we proposed a new spintronic application, the spin-hall… (more)

Subjects/Keywords: Focused Ion Beam; Quantum-ring; Spin-Hall; AlGaN; GaN

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APA (6th Edition):

Chang, Y. (2009). Study of AlGaN/GaN quantum structure fabricated by Focus ion beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Yung-Shi. “Study of AlGaN/GaN quantum structure fabricated by Focus ion beam.” 2009. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Yung-Shi. “Study of AlGaN/GaN quantum structure fabricated by Focus ion beam.” 2009. Web. 20 Oct 2019.

Vancouver:

Chang Y. Study of AlGaN/GaN quantum structure fabricated by Focus ion beam. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang Y. Study of AlGaN/GaN quantum structure fabricated by Focus ion beam. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

13. Chen, Yu-hao. Analysis of Mg-doped GaN thin film grown by PAMBE.

Degree: Master, Physics, 2010, NSYSU

 We grew Mg-doped of GaN on GaN template by plasma-assisted molecular beam epitaxy (PAMBE) and measured these samples by Hall measurement, I-V curve measurement, PL,… (more)

Subjects/Keywords: Mg-doped; MBE; GaN

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APA (6th Edition):

Chen, Y. (2010). Analysis of Mg-doped GaN thin film grown by PAMBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yu-hao. “Analysis of Mg-doped GaN thin film grown by PAMBE.” 2010. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yu-hao. “Analysis of Mg-doped GaN thin film grown by PAMBE.” 2010. Web. 20 Oct 2019.

Vancouver:

Chen Y. Analysis of Mg-doped GaN thin film grown by PAMBE. [Internet] [Thesis]. NSYSU; 2010. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Analysis of Mg-doped GaN thin film grown by PAMBE. [Thesis]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

14. Wu, Hao-Fei. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.

Degree: Master, Physics, 2011, NSYSU

 We invistegated the characteristic of GaN grown on LiAlO2 substrate by molecular epitaxy beam. First of all , we try to changed the growth ratio… (more)

Subjects/Keywords: MBE; LiAlO2; GaN

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APA (6th Edition):

Wu, H. (2011). Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Hao-Fei. “Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.” 2011. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Hao-Fei. “Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.” 2011. Web. 20 Oct 2019.

Vancouver:

Wu H. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. [Internet] [Thesis]. NSYSU; 2011. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu H. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

15. Yang, Chen-chi. Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy.

Degree: Master, Physics, 2011, NSYSU

 This article describes that we grew InGaN ternary films by Plasma- Assisted Molecular Beam Epitaxy (PAMBE) on the ZnO substrate O-polar (0001) surface. Before we… (more)

Subjects/Keywords: InGaN; Molecular Beam Epitaxy; ZnO; period shutter control method; single content

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APA (6th Edition):

Yang, C. (2011). Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Chen-chi. “Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy.” 2011. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Chen-chi. “Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy.” 2011. Web. 20 Oct 2019.

Vancouver:

Yang C. Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2011. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

16. Hsieh, Wan-Shan. Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy.

Degree: Master, Physics, 2014, NSYSU

 This article describes that we grew GaN films by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) on the (La,Sr)(Al,Ta)O3 substrate (100) surface. Lattice parameter of (La,Sr)(Al,Ta)O3 are… (more)

Subjects/Keywords: Molecular beam epitaxy; Non-polar; Growth temperature; LSAT; nanocrystal

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APA (6th Edition):

Hsieh, W. (2014). Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsieh, Wan-Shan. “Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy.” 2014. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsieh, Wan-Shan. “Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy.” 2014. Web. 20 Oct 2019.

Vancouver:

Hsieh W. Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsieh W. Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

17. Shih, Huei-Jyun. Study of M-plane GaN on ZnO micro-rods heterostructures grown by plasma-assisted molecular beam epitaxy.

Degree: Master, Physics, 2016, NSYSU

 This study described that we discussed M-plane GaN on M-plane ZnO micro-rods heterostructures grown by plasma-assisted molecular beam epitaxy. By changing the ratio of Ga/N… (more)

Subjects/Keywords: molecular beam epitaxy; heterostucture; GaN; micro-rod; N/Ga ratio; ZnO

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APA (6th Edition):

Shih, H. (2016). Study of M-plane GaN on ZnO micro-rods heterostructures grown by plasma-assisted molecular beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627116-105035

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Shih, Huei-Jyun. “Study of M-plane GaN on ZnO micro-rods heterostructures grown by plasma-assisted molecular beam epitaxy.” 2016. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627116-105035.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Shih, Huei-Jyun. “Study of M-plane GaN on ZnO micro-rods heterostructures grown by plasma-assisted molecular beam epitaxy.” 2016. Web. 20 Oct 2019.

Vancouver:

Shih H. Study of M-plane GaN on ZnO micro-rods heterostructures grown by plasma-assisted molecular beam epitaxy. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627116-105035.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shih H. Study of M-plane GaN on ZnO micro-rods heterostructures grown by plasma-assisted molecular beam epitaxy. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627116-105035

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

18. You, Shuo-ting. Characterization and growth of M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy.

Degree: Master, Physics, 2012, NSYSU

 ãIn this thesis, we have studied the growth of M-plane GaN thin film on LiGaO2 (100) substrate by Plasma-Assisted Molecular Beam Epitaxy. We found that… (more)

Subjects/Keywords: AFM; Ga2O3; Molecular beam epitaxy; LiGaO2; Non-polar GaN

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APA (6th Edition):

You, S. (2012). Characterization and growth of M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718112-141541

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

You, Shuo-ting. “Characterization and growth of M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy.” 2012. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718112-141541.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

You, Shuo-ting. “Characterization and growth of M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy.” 2012. Web. 20 Oct 2019.

Vancouver:

You S. Characterization and growth of M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718112-141541.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

You S. Characterization and growth of M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718112-141541

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

19. Lin, Yu-Chiao. Characterization of GaN grown on tilt-cut γ-LiAlO 2 by molecular beam epitaxy for different growth temperatures.

Degree: Master, Physics, 2011, NSYSU

 We study the properties of m-plane GaN structure on LiAlO 2 substrate grown by plasma-assisted molecular-beam epitaxy (PAMBE). Lattice parameters of LiAlO 2 are close… (more)

Subjects/Keywords: Lattice Constant; Molecular Beam Epitaxy; LiAlO; GaN; Growth Temperature

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APA (6th Edition):

Lin, Y. (2011). Characterization of GaN grown on tilt-cut γ-LiAlO 2 by molecular beam epitaxy for different growth temperatures. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719111-203858

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Yu-Chiao. “Characterization of GaN grown on tilt-cut γ-LiAlO 2 by molecular beam epitaxy for different growth temperatures.” 2011. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719111-203858.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Yu-Chiao. “Characterization of GaN grown on tilt-cut γ-LiAlO 2 by molecular beam epitaxy for different growth temperatures.” 2011. Web. 20 Oct 2019.

Vancouver:

Lin Y. Characterization of GaN grown on tilt-cut γ-LiAlO 2 by molecular beam epitaxy for different growth temperatures. [Internet] [Thesis]. NSYSU; 2011. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719111-203858.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Y. Characterization of GaN grown on tilt-cut γ-LiAlO 2 by molecular beam epitaxy for different growth temperatures. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719111-203858

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

20. Teng, Chun-Yuan. In2O3/ZnO Superlattice Epitaxial Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties.

Degree: Master, Physics, 2017, NSYSU

 Superlattices of shallow quantum well structures with alternating layers of In2O3 and ZnO have been prepared by sputtering at 923K on c-sapphire substrates. Optimization of… (more)

Subjects/Keywords: ZnO; Epitaxy; Sputtering; Superlattice; In2O3

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APA (6th Edition):

Teng, C. (2017). In2O3/ZnO Superlattice Epitaxial Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0813117-224059

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Teng, Chun-Yuan. “In2O3/ZnO Superlattice Epitaxial Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties.” 2017. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0813117-224059.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Teng, Chun-Yuan. “In2O3/ZnO Superlattice Epitaxial Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties.” 2017. Web. 20 Oct 2019.

Vancouver:

Teng C. In2O3/ZnO Superlattice Epitaxial Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0813117-224059.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Teng C. In2O3/ZnO Superlattice Epitaxial Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0813117-224059

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

21. Cheng, Yen-Ping. ZnO/Cu2O Superlattice Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties.

Degree: Master, Physics, 2017, NSYSU

 Superlattices with alternating layers of Cu2O and ZnO have been prepared by magnetron sputtering on (0001)-sapphire (Al2O3) substrates. The Cu2O is easier to diffuse into… (more)

Subjects/Keywords: PL; Superlattice; exciton; ZnO; Cu2O

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APA (6th Edition):

Cheng, Y. (2017). ZnO/Cu2O Superlattice Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0814117-062307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cheng, Yen-Ping. “ZnO/Cu2O Superlattice Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties.” 2017. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0814117-062307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cheng, Yen-Ping. “ZnO/Cu2O Superlattice Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties.” 2017. Web. 20 Oct 2019.

Vancouver:

Cheng Y. ZnO/Cu2O Superlattice Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0814117-062307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cheng Y. ZnO/Cu2O Superlattice Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0814117-062307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

22. Chen, Zong-Ting. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.

Degree: Master, Physics, 2013, NSYSU

 We have grown InGaN/GaN quantum wells (QWs) by plasma-assisted molecular beam epitaxy(PA MBE) for the application light-emitting diodes (LEDs). In order to evaluate the optical… (more)

Subjects/Keywords: Qantum well; GaN; InGaN; MBE

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APA (6th Edition):

Chen, Z. (2013). Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Zong-Ting. “Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.” 2013. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Zong-Ting. “Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.” 2013. Web. 20 Oct 2019.

Vancouver:

Chen Z. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Z. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

23. Wang, Mei-yu. Characterization of InGaN/GaN quantum-well microdisks grown on γ-LiAlO2 substrate by plasma-assisted molecular beam epitaxy.

Degree: Master, Physics, 2013, NSYSU

 The characterization of InGaN/GaN quantum-well microdisks grown by plasma-assisted molecular beam epitaxy on γ-LiAlO2 substrate have been investigated with SEM and the spectra of PL… (more)

Subjects/Keywords: quantum well; LAO; microdisk

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, M. (2013). Characterization of InGaN/GaN quantum-well microdisks grown on γ-LiAlO2 substrate by plasma-assisted molecular beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726113-151242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Mei-yu. “Characterization of InGaN/GaN quantum-well microdisks grown on γ-LiAlO2 substrate by plasma-assisted molecular beam epitaxy.” 2013. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726113-151242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Mei-yu. “Characterization of InGaN/GaN quantum-well microdisks grown on γ-LiAlO2 substrate by plasma-assisted molecular beam epitaxy.” 2013. Web. 20 Oct 2019.

Vancouver:

Wang M. Characterization of InGaN/GaN quantum-well microdisks grown on γ-LiAlO2 substrate by plasma-assisted molecular beam epitaxy. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726113-151242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang M. Characterization of InGaN/GaN quantum-well microdisks grown on γ-LiAlO2 substrate by plasma-assisted molecular beam epitaxy. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726113-151242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Chen, Jian-yu. Optical properties of InGaN/GaN single-quantum-well microdisks.

Degree: Master, Physics, 2014, NSYSU

 We use a Ti:sapphire femtosecond laser and a Time Correlated Single Photon Counting (TCSPC) system to study optical properties and carrier relaxation of InGaN grown… (more)

Subjects/Keywords: lifetime; Internal Quantum; Efficiency; time-resolved photoluminescence; InGaN; microdisk; photoluminescence

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APA (6th Edition):

Chen, J. (2014). Optical properties of InGaN/GaN single-quantum-well microdisks. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-160026

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Jian-yu. “Optical properties of InGaN/GaN single-quantum-well microdisks.” 2014. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-160026.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Jian-yu. “Optical properties of InGaN/GaN single-quantum-well microdisks.” 2014. Web. 20 Oct 2019.

Vancouver:

Chen J. Optical properties of InGaN/GaN single-quantum-well microdisks. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-160026.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen J. Optical properties of InGaN/GaN single-quantum-well microdisks. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-160026

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

25. Wu, Chieh-lung. Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells.

Degree: PhD, Physics, 2011, NSYSU

 The spin-splitting energies in strained bulk wurtzite aluminum nitride (AlN) are studied using the linear combination of atomic orbital method. It is found that strain… (more)

Subjects/Keywords: spin slitting; LCAO; Wurtzite; Rashba effect; Dresselhaus effect; quantum well

Page 1 Page 2 Page 3 Page 4 Page 5 Page 6 Page 7 Sample image

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APA (6th Edition):

Wu, C. (2011). Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801111-142618

Chicago Manual of Style (16th Edition):

Wu, Chieh-lung. “Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells.” 2011. Doctoral Dissertation, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801111-142618.

MLA Handbook (7th Edition):

Wu, Chieh-lung. “Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells.” 2011. Web. 20 Oct 2019.

Vancouver:

Wu C. Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells. [Internet] [Doctoral dissertation]. NSYSU; 2011. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801111-142618.

Council of Science Editors:

Wu C. Spin Splitting in Bulk Wurtzite Materials and Their Quantum Wells. [Doctoral Dissertation]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801111-142618


NSYSU

26. Liao, Po-Yung. Investigation of Reliability and Physical Mechanisms of Flexible aInGaZnO Thin Film Transistors for Advanced Display.

Degree: PhD, Physics, 2017, NSYSU

 In order to meet the requirements of novel display technologies such as high-resolution large-screen LCD and AMOLED. Oxide semiconductor thin film transistors (TFTs) have attracted… (more)

Subjects/Keywords: thin film transistor; InGaZnO; hot-carrier effect; forked-shaped structure; flexible a-InGaZnO TFTs; mechanical strain

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APA (6th Edition):

Liao, P. (2017). Investigation of Reliability and Physical Mechanisms of Flexible aInGaZnO Thin Film Transistors for Advanced Display. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805117-183252

Chicago Manual of Style (16th Edition):

Liao, Po-Yung. “Investigation of Reliability and Physical Mechanisms of Flexible aInGaZnO Thin Film Transistors for Advanced Display.” 2017. Doctoral Dissertation, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805117-183252.

MLA Handbook (7th Edition):

Liao, Po-Yung. “Investigation of Reliability and Physical Mechanisms of Flexible aInGaZnO Thin Film Transistors for Advanced Display.” 2017. Web. 20 Oct 2019.

Vancouver:

Liao P. Investigation of Reliability and Physical Mechanisms of Flexible aInGaZnO Thin Film Transistors for Advanced Display. [Internet] [Doctoral dissertation]. NSYSU; 2017. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805117-183252.

Council of Science Editors:

Liao P. Investigation of Reliability and Physical Mechanisms of Flexible aInGaZnO Thin Film Transistors for Advanced Display. [Doctoral Dissertation]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805117-183252


NSYSU

27. Kuo, Ting-Huang. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.

Degree: Master, Electrical Engineering, 2008, NSYSU

 In this study, the characteristics of atomic layer deposited TiO2 films on Gallium Arsenide substrate were investigated. The physical and chemical properties were measured and… (more)

Subjects/Keywords: GaAs; ALD; TiO2; MOCVD

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APA (6th Edition):

Kuo, T. (2008). Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Web. 20 Oct 2019.

Vancouver:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

28. Lee, Cheng-yuan. Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition.

Degree: Master, Electrical Engineering, 2008, NSYSU

 In this study, the characteristics of low-pressure chemical vapor deposition deposited silicon nitride films on n-GaN substrate were investigated. The physical and chemical properties were… (more)

Subjects/Keywords: LPCVD; Silicon Nitride Oxide; n-GaN

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APA (6th Edition):

Lee, C. (2008). Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804108-173141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Cheng-yuan. “Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition.” 2008. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804108-173141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Cheng-yuan. “Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition.” 2008. Web. 20 Oct 2019.

Vancouver:

Lee C. Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804108-173141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee C. Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804108-173141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

29. Chia, Chun-Wei. Water-assisted Liquid Phase Deposited Fluorinated Silicon Oxide on Amorphous Silicon.

Degree: Master, Electrical Engineering, 2008, NSYSU

 In this study, SiO2-xFx films were deposited on Si and amorphous silicon, their physical and chemical properties were measured. An Al/ SiO2-xFx /Si and Al/… (more)

Subjects/Keywords: Amorphous silicon; Fluorinated Silicon Oxide; Silicon oxide; LPD

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APA (6th Edition):

Chia, C. (2008). Water-assisted Liquid Phase Deposited Fluorinated Silicon Oxide on Amorphous Silicon. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812108-141338

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chia, Chun-Wei. “Water-assisted Liquid Phase Deposited Fluorinated Silicon Oxide on Amorphous Silicon.” 2008. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812108-141338.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chia, Chun-Wei. “Water-assisted Liquid Phase Deposited Fluorinated Silicon Oxide on Amorphous Silicon.” 2008. Web. 20 Oct 2019.

Vancouver:

Chia C. Water-assisted Liquid Phase Deposited Fluorinated Silicon Oxide on Amorphous Silicon. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812108-141338.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chia C. Water-assisted Liquid Phase Deposited Fluorinated Silicon Oxide on Amorphous Silicon. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812108-141338

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

30. Chen, Yen-Liang. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.

Degree: PhD, Physics, 2010, NSYSU

 The quality of GaN template layer plays a very important role in high electron mobility transistors. We proposed a special method in the growth of… (more)

Subjects/Keywords: nano wire; high mobility; MBE; GaN; AlGaN

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APA (6th Edition):

Chen, Y. (2010). The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827

Chicago Manual of Style (16th Edition):

Chen, Yen-Liang. “The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.” 2010. Doctoral Dissertation, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827.

MLA Handbook (7th Edition):

Chen, Yen-Liang. “The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.” 2010. Web. 20 Oct 2019.

Vancouver:

Chen Y. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2010. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827.

Council of Science Editors:

Chen Y. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. [Doctoral Dissertation]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827

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