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You searched for +publisher:"NSYSU" +contributor:("I-kai Lo"). Showing records 1 – 11 of 11 total matches.

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NSYSU

1. Chen , Li-Hui. Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs.

Degree: Master, Electro-Optical Engineering, 2017, NSYSU

 Metal-oxide-semiconductor field effect transistor (MOSFET) is the most important device for advanced integrated circuits. The main advantages of a MOSFET are lower fabrication costs per… (more)

Subjects/Keywords: RPO; SOI; MOSFETs; hole injection; hot carrier degradation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen , L. (2017). Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen , Li-Hui. “Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs.” 2017. Thesis, NSYSU. Accessed August 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen , Li-Hui. “Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs.” 2017. Web. 22 Aug 2019.

Vancouver:

Chen L. Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Aug 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen L. Electrical Analysis and Physical Mechanism of Hot Carrier Degradation in SOI MOSFETs. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716117-154440

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Lee, Chiao-han. Germanium Thin Films on Highly-Resistive Silicon Substrates by e-Beam Deposition and Study of their Magneto-transport Behaviors.

Degree: Master, Physics, 2017, NSYSU

 In this work, we deposited germanium on high-resistivity silicon substrates by E-beam evaporation, and by annealing different temperature understanding the crystalline phase of thin film.… (more)

Subjects/Keywords: GIXRD; TEM; 2D material; Si1-xGex thin film; XRR; XRD

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APA (6th Edition):

Lee, C. (2017). Germanium Thin Films on Highly-Resistive Silicon Substrates by e-Beam Deposition and Study of their Magneto-transport Behaviors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812117-013007

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Chiao-han. “Germanium Thin Films on Highly-Resistive Silicon Substrates by e-Beam Deposition and Study of their Magneto-transport Behaviors.” 2017. Thesis, NSYSU. Accessed August 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812117-013007.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Chiao-han. “Germanium Thin Films on Highly-Resistive Silicon Substrates by e-Beam Deposition and Study of their Magneto-transport Behaviors.” 2017. Web. 22 Aug 2019.

Vancouver:

Lee C. Germanium Thin Films on Highly-Resistive Silicon Substrates by e-Beam Deposition and Study of their Magneto-transport Behaviors. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Aug 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812117-013007.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee C. Germanium Thin Films on Highly-Resistive Silicon Substrates by e-Beam Deposition and Study of their Magneto-transport Behaviors. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812117-013007

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

3. Hong, Min-Hsuan. Zinc Oxide Nanotip and Nanorod on Titanium Oxide Heterojunction Gas Sensor Prepared by Aqueous Solution Deposition.

Degree: Master, Electrical Engineering, 2011, NSYSU

 In this study, zinc oxide (ZnO) nanotip and nanorod were grown on glass substrate by aqueous solution deposition (ASD). Both characteristics of the two nanostructures… (more)

Subjects/Keywords: gas sensor; heterojunction; nanorod; nanotip; zinc oxide (ZnO); aqueous solution deposition (ASD)

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APA (6th Edition):

Hong, M. (2011). Zinc Oxide Nanotip and Nanorod on Titanium Oxide Heterojunction Gas Sensor Prepared by Aqueous Solution Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-204443

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hong, Min-Hsuan. “Zinc Oxide Nanotip and Nanorod on Titanium Oxide Heterojunction Gas Sensor Prepared by Aqueous Solution Deposition.” 2011. Thesis, NSYSU. Accessed August 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-204443.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hong, Min-Hsuan. “Zinc Oxide Nanotip and Nanorod on Titanium Oxide Heterojunction Gas Sensor Prepared by Aqueous Solution Deposition.” 2011. Web. 22 Aug 2019.

Vancouver:

Hong M. Zinc Oxide Nanotip and Nanorod on Titanium Oxide Heterojunction Gas Sensor Prepared by Aqueous Solution Deposition. [Internet] [Thesis]. NSYSU; 2011. [cited 2019 Aug 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-204443.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hong M. Zinc Oxide Nanotip and Nanorod on Titanium Oxide Heterojunction Gas Sensor Prepared by Aqueous Solution Deposition. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-204443

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

4. Hsieh, Chia-Ho. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.

Degree: PhD, Materials and Optoelectronic Science, 2009, NSYSU

 The group III nitride semiconductor grown on c-plane sapphire by radio frequency plasma assisted molecular beam epitaxy has been studied. To archive good quality GaN… (more)

Subjects/Keywords: MBE; GaN; LiAlO2

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APA (6th Edition):

Hsieh, C. (2009). The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237

Chicago Manual of Style (16th Edition):

Hsieh, Chia-Ho. “The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.” 2009. Doctoral Dissertation, NSYSU. Accessed August 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237.

MLA Handbook (7th Edition):

Hsieh, Chia-Ho. “The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.” 2009. Web. 22 Aug 2019.

Vancouver:

Hsieh C. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2009. [cited 2019 Aug 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237.

Council of Science Editors:

Hsieh C. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. [Doctoral Dissertation]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237


NSYSU

5. Tang, Tzu-hsien. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.

Degree: Master, Electrical Engineering, 2014, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP asytmmetrical Schottky barrier… (more)

Subjects/Keywords: InP; TiO2; asymmetrical Schottky barrier MOSFET; ALD

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APA (6th Edition):

Tang, T. (2014). Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Thesis, NSYSU. Accessed August 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Web. 22 Aug 2019.

Vancouver:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Aug 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Chuang, Keng-Lin. Investigation of GaN semiconductor using Hall measurement.

Degree: Master, Physics, 2003, NSYSU

 In the study we employ Hall measurements to analyze that the GaN semiconductor by MBE. In the study we analyze the parameters of low temperature… (more)

Subjects/Keywords: Hall

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APA (6th Edition):

Chuang, K. (2003). Investigation of GaN semiconductor using Hall measurement. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723103-113928

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chuang, Keng-Lin. “Investigation of GaN semiconductor using Hall measurement.” 2003. Thesis, NSYSU. Accessed August 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723103-113928.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chuang, Keng-Lin. “Investigation of GaN semiconductor using Hall measurement.” 2003. Web. 22 Aug 2019.

Vancouver:

Chuang K. Investigation of GaN semiconductor using Hall measurement. [Internet] [Thesis]. NSYSU; 2003. [cited 2019 Aug 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723103-113928.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chuang K. Investigation of GaN semiconductor using Hall measurement. [Thesis]. NSYSU; 2003. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723103-113928

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Hsu, Kuo-Chou. Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering.

Degree: Master, Physics, 2000, NSYSU

 ABSTRACT In this thesis we deposit GaN films by magnetron rf sputtering with changes substrate temperature. The electron probe microscope analysis ( EPMA ), scanning… (more)

Subjects/Keywords: GaN; sputtering; substrate temperate

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APA (6th Edition):

Hsu, K. (2000). Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705100-113701

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsu, Kuo-Chou. “Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering.” 2000. Thesis, NSYSU. Accessed August 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705100-113701.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsu, Kuo-Chou. “Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering.” 2000. Web. 22 Aug 2019.

Vancouver:

Hsu K. Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering. [Internet] [Thesis]. NSYSU; 2000. [cited 2019 Aug 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705100-113701.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsu K. Substrate Temperature Study on The Growth of GaN Films Using Magnetron Sputtering. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705100-113701

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

8. Chou, Chung-Yu. Studies in InxGa1-xSb/InAs super lattice at low temperature and high magnetic field.

Degree: Master, Physics, 2001, NSYSU

 We intend to study the properties of two dimensional electron-hole systems in superlattice of â¢-⤠semiconductors at ultra-low temperature and high magnetic field by SdH… (more)

Subjects/Keywords: 2DEG; super lattice

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APA (6th Edition):

Chou, C. (2001). Studies in InxGa1-xSb/InAs super lattice at low temperature and high magnetic field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723101-090826

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chou, Chung-Yu. “Studies in InxGa1-xSb/InAs super lattice at low temperature and high magnetic field.” 2001. Thesis, NSYSU. Accessed August 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723101-090826.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chou, Chung-Yu. “Studies in InxGa1-xSb/InAs super lattice at low temperature and high magnetic field.” 2001. Web. 22 Aug 2019.

Vancouver:

Chou C. Studies in InxGa1-xSb/InAs super lattice at low temperature and high magnetic field. [Internet] [Thesis]. NSYSU; 2001. [cited 2019 Aug 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723101-090826.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chou C. Studies in InxGa1-xSb/InAs super lattice at low temperature and high magnetic field. [Thesis]. NSYSU; 2001. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723101-090826

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. Chi, Tung-Wei. Investigation of GaN/AlGaN Multiple Quantum Disks.

Degree: Master, Physics, 2004, NSYSU

 In this thesis, two series of self-assembled GaN and AlxGa1-xN nanorods are grown by plasma-assisted molecular beam epitaxy (PAMBE) on Si(111) wafer. The Al contents… (more)

Subjects/Keywords: nanorods; GaN; polarization effect; Quantum effect; AlGaN; nanodisks

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chi, T. (2004). Investigation of GaN/AlGaN Multiple Quantum Disks. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0130104-135317

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chi, Tung-Wei. “Investigation of GaN/AlGaN Multiple Quantum Disks.” 2004. Thesis, NSYSU. Accessed August 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0130104-135317.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chi, Tung-Wei. “Investigation of GaN/AlGaN Multiple Quantum Disks.” 2004. Web. 22 Aug 2019.

Vancouver:

Chi T. Investigation of GaN/AlGaN Multiple Quantum Disks. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Aug 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0130104-135317.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chi T. Investigation of GaN/AlGaN Multiple Quantum Disks. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0130104-135317

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Huang, Hsin-Hsiung. Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy.

Degree: Master, Physics, 2004, NSYSU

 As the device size getting nanoscale, quantum dot structure had become one kind of new method of semiconductor manufacturing technology. In this thesis, two series… (more)

Subjects/Keywords: quantum dots; MBE; InN

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APA (6th Edition):

Huang, H. (2004). Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-014119

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Hsin-Hsiung. “Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy.” 2004. Thesis, NSYSU. Accessed August 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-014119.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Hsin-Hsiung. “Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy.” 2004. Web. 22 Aug 2019.

Vancouver:

Huang H. Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Aug 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-014119.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang H. Self assembled indium nitride quantum dots grown by plasma-assisted molecular-beam epitaxy. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-014119

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

11. Hung, Yu-Hsiang. Improvement of Electrical Characteristics of MOCVD-TiO2 Films by Postmetallization Annealing.

Degree: Master, Electrical Engineering, 2005, NSYSU

 Scaling down of DRAMâs dimensions is a continuous trend since its inception. Therefore, the high dielectric constant material is necessary because the application of conventional… (more)

Subjects/Keywords: MOCVD; PMA; TiO2

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APA (6th Edition):

Hung, Y. (2005). Improvement of Electrical Characteristics of MOCVD-TiO2 Films by Postmetallization Annealing. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715105-105304

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hung, Yu-Hsiang. “Improvement of Electrical Characteristics of MOCVD-TiO2 Films by Postmetallization Annealing.” 2005. Thesis, NSYSU. Accessed August 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715105-105304.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hung, Yu-Hsiang. “Improvement of Electrical Characteristics of MOCVD-TiO2 Films by Postmetallization Annealing.” 2005. Web. 22 Aug 2019.

Vancouver:

Hung Y. Improvement of Electrical Characteristics of MOCVD-TiO2 Films by Postmetallization Annealing. [Internet] [Thesis]. NSYSU; 2005. [cited 2019 Aug 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715105-105304.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hung Y. Improvement of Electrical Characteristics of MOCVD-TiO2 Films by Postmetallization Annealing. [Thesis]. NSYSU; 2005. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715105-105304

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.