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You searched for +publisher:"Indian Institute of Science" +contributor:("Raghavan, Srinivasan"). Showing records 1 – 11 of 11 total matches.

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Indian Institute of Science

1. Chaudhary, Aakanksha. Titania Nanostructures for Photocatalytic and Photovoltaic Applications.

Degree: PhD, Faculty of Science, 2018, Indian Institute of Science

 Titania has been the focus of attention for several decades owing to its chemical stability, non-toxicity, inexpensiveness and robust surface chemistry. Its technological applications include… (more)

Subjects/Keywords: Titanium Nanostructures; Photocatalysis; Photovoltaics; Nanostructued Titanium Dioxide Films; Photovoltaic Devices; Dye Sensitized Solar Cells (DSSC); Nanostructured Titanianium Oxide; Titanium Photoanodes; Nanostructured Photocatalytic Titania; Nanostructured Titania Photovoltaic Devices; Photoenergy; Adherent Titania Films; Nanostructured TiO2; Titania Nanostructures; Materials Science

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APA (6th Edition):

Chaudhary, A. (2018). Titania Nanostructures for Photocatalytic and Photovoltaic Applications. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/3857

Chicago Manual of Style (16th Edition):

Chaudhary, Aakanksha. “Titania Nanostructures for Photocatalytic and Photovoltaic Applications.” 2018. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/3857.

MLA Handbook (7th Edition):

Chaudhary, Aakanksha. “Titania Nanostructures for Photocatalytic and Photovoltaic Applications.” 2018. Web. 23 Jan 2021.

Vancouver:

Chaudhary A. Titania Nanostructures for Photocatalytic and Photovoltaic Applications. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2018. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/3857.

Council of Science Editors:

Chaudhary A. Titania Nanostructures for Photocatalytic and Photovoltaic Applications. [Doctoral Dissertation]. Indian Institute of Science; 2018. Available from: http://etd.iisc.ac.in/handle/2005/3857


Indian Institute of Science

2. Bardhan, Abheek. Integration of AlGaN with (111) Si Substrate by MOCVD.

Degree: PhD, Faculty of Science, 2019, Indian Institute of Science

 AlGaN is an important semiconductor material for electronic and optoelectronic applications. The change in composition of AlGaN (AlN to GaN) provides a range of bandgaps… (more)

Subjects/Keywords: MOCVD; AlGaN; Si (111) Substrates; (111) Si; Si (111) Substrates; Material Science

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APA (6th Edition):

Bardhan, A. (2019). Integration of AlGaN with (111) Si Substrate by MOCVD. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/4298

Chicago Manual of Style (16th Edition):

Bardhan, Abheek. “Integration of AlGaN with (111) Si Substrate by MOCVD.” 2019. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/4298.

MLA Handbook (7th Edition):

Bardhan, Abheek. “Integration of AlGaN with (111) Si Substrate by MOCVD.” 2019. Web. 23 Jan 2021.

Vancouver:

Bardhan A. Integration of AlGaN with (111) Si Substrate by MOCVD. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2019. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/4298.

Council of Science Editors:

Bardhan A. Integration of AlGaN with (111) Si Substrate by MOCVD. [Doctoral Dissertation]. Indian Institute of Science; 2019. Available from: http://etd.iisc.ac.in/handle/2005/4298


Indian Institute of Science

3. Mohan, Nagaboopathy. Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si.

Degree: PhD, Faculty Of Engineering, 2017, Indian Institute of Science

 Gallium Nitride (GaN) and its alloys with InN and AlN, the III-nitrides, are of interest for a variety of high power-high frequency electronics and optoelectronics… (more)

Subjects/Keywords: Gallium Nitrides; Gallium Nitride Alloys; Gallium Nitride; Dislocation Reduction; Gallium Nitride on Silicon; High Electron Mobility Transistors; Si Doping; GaN; Materials Science

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APA (6th Edition):

Mohan, N. (2017). Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2789

Chicago Manual of Style (16th Edition):

Mohan, Nagaboopathy. “Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/2789.

MLA Handbook (7th Edition):

Mohan, Nagaboopathy. “Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si.” 2017. Web. 23 Jan 2021.

Vancouver:

Mohan N. Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/2789.

Council of Science Editors:

Mohan N. Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2789


Indian Institute of Science

4. Narayanachari, K V L V. Stress and Microstructural Evolution During the Growth of Transition Metal Oxide Thin Films by PVD.

Degree: PhD, Faculty of Science, 2018, Indian Institute of Science

 System on Chip (SoC) and System in Package (SiP) are two electronic technologies that involve integrating multiple functionalities onto a single platform. When the platform… (more)

Subjects/Keywords: Transition Metal Oxide Thin Films; System On Chip (SoC); System on Package (SiP); Thin Film Deposition; Ultra High Vacuum Thin Film Deposition; Pulsed Laser Ablation; Sputter Deposition; Oxide Thin Film Growth; Oxides On Silicon; Physical Vapor Deposition; ZrO2 Thin Films; ZrO2/Ge Thin Films; BaTiO3 Thin Films; SrTiO3 Thin Films; Materials Science

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APA (6th Edition):

Narayanachari, K. V. L. V. (2018). Stress and Microstructural Evolution During the Growth of Transition Metal Oxide Thin Films by PVD. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/3590

Chicago Manual of Style (16th Edition):

Narayanachari, K V L V. “Stress and Microstructural Evolution During the Growth of Transition Metal Oxide Thin Films by PVD.” 2018. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/3590.

MLA Handbook (7th Edition):

Narayanachari, K V L V. “Stress and Microstructural Evolution During the Growth of Transition Metal Oxide Thin Films by PVD.” 2018. Web. 23 Jan 2021.

Vancouver:

Narayanachari KVLV. Stress and Microstructural Evolution During the Growth of Transition Metal Oxide Thin Films by PVD. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2018. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/3590.

Council of Science Editors:

Narayanachari KVLV. Stress and Microstructural Evolution During the Growth of Transition Metal Oxide Thin Films by PVD. [Doctoral Dissertation]. Indian Institute of Science; 2018. Available from: http://etd.iisc.ac.in/handle/2005/3590


Indian Institute of Science

5. Shakthivel, Dhayalan. Thermodynamics and Kinetics of Nucleation and Growth of Silicon Nanowires.

Degree: PhD, Faculty of Science, 2017, Indian Institute of Science

 Si nanowires have potential applications in a variety of technologies such as micro and nanoelectronics, sensors, electrodes and photovoltaic applications due to their size and… (more)

Subjects/Keywords: Silicon Nanowires; Nanostructured Materials; Silicon Nanowires; Silicon Nanowire Growth; Silicon Nanowire Incubation; Sapphire Substrates; Si Nanowires; Metalorganic Chemical Vapour Deposition (MOCVD) Reactors; Nanowires (NWs); Si NWs; Nanotechnology

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APA (6th Edition):

Shakthivel, D. (2017). Thermodynamics and Kinetics of Nucleation and Growth of Silicon Nanowires. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2896

Chicago Manual of Style (16th Edition):

Shakthivel, Dhayalan. “Thermodynamics and Kinetics of Nucleation and Growth of Silicon Nanowires.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/2896.

MLA Handbook (7th Edition):

Shakthivel, Dhayalan. “Thermodynamics and Kinetics of Nucleation and Growth of Silicon Nanowires.” 2017. Web. 23 Jan 2021.

Vancouver:

Shakthivel D. Thermodynamics and Kinetics of Nucleation and Growth of Silicon Nanowires. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/2896.

Council of Science Editors:

Shakthivel D. Thermodynamics and Kinetics of Nucleation and Growth of Silicon Nanowires. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2896


Indian Institute of Science

6. Choudhury, Tanushree H. Anodized Zirconia Nanostructures.

Degree: PhD, Faculty of Science, 2018, Indian Institute of Science

 Electrochemical anodization is a facile technique to synthesize ordered oxide nanostructures. Though the number of materials exhibiting anodized nanostructures has increased considerably in the recent… (more)

Subjects/Keywords: Electrochemical Anodization; Anodized Zirconia Nanostructures; Zirconia Nanostructures - Anodization; Sputtered Zirconium Thin Film Aniodization; Anodized Ytrria-Zirconia Nanostructures; Anodic Nanostructured Zirconia; Zirconium-Yttrium Films - Aniodization; Nanotechnology

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APA (6th Edition):

Choudhury, T. H. (2018). Anodized Zirconia Nanostructures. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/3462

Chicago Manual of Style (16th Edition):

Choudhury, Tanushree H. “Anodized Zirconia Nanostructures.” 2018. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/3462.

MLA Handbook (7th Edition):

Choudhury, Tanushree H. “Anodized Zirconia Nanostructures.” 2018. Web. 23 Jan 2021.

Vancouver:

Choudhury TH. Anodized Zirconia Nanostructures. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2018. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/3462.

Council of Science Editors:

Choudhury TH. Anodized Zirconia Nanostructures. [Doctoral Dissertation]. Indian Institute of Science; 2018. Available from: http://etd.iisc.ac.in/handle/2005/3462


Indian Institute of Science

7. Chandrasekar, Hareesh. Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives.

Degree: PhD, Faculty Of Engineering, 2017, Indian Institute of Science

 Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency… (more)

Subjects/Keywords: Group III-A Nitrides; High Electron Mobility Transistor; Nitride Semiconductors; Aluminium Nitride-Silicon Interface; Gallium Nitride Films; Aluminium Nitride Thin Films; Nitride Films; Nitride Epitaxy; Nitride Hetero-Interfaces; Aluminium Nitride (AlN) Epitaxial Layers; GaN Films; AlN/Si Hetero-interface; AlN-Si Interface; Materials Science

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APA (6th Edition):

Chandrasekar, H. (2017). Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2740

Chicago Manual of Style (16th Edition):

Chandrasekar, Hareesh. “Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/2740.

MLA Handbook (7th Edition):

Chandrasekar, Hareesh. “Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives.” 2017. Web. 23 Jan 2021.

Vancouver:

Chandrasekar H. Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/2740.

Council of Science Editors:

Chandrasekar H. Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2740


Indian Institute of Science

8. Krishna Bharadwaj, BB. Controlling Defects in CVD Grown Graphene : Device Application Perspective.

Degree: PhD, Faculty of Engineering, 2017, Indian Institute of Science

 Necessity is the mother of all inventions. With Si hitting the speed bottleneck, newer materials to replace Si are being sought out. The ex-foliation based… (more)

Subjects/Keywords: Chemical Vapor Deposition; Graphene; Graphene Growth; Raman Spectroscopy of Graphene; Graphene Devices; CVD Graphene; Nanoscience and Engineering

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APA (6th Edition):

Krishna Bharadwaj, B. (2017). Controlling Defects in CVD Grown Graphene : Device Application Perspective. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2868

Chicago Manual of Style (16th Edition):

Krishna Bharadwaj, BB. “Controlling Defects in CVD Grown Graphene : Device Application Perspective.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/2868.

MLA Handbook (7th Edition):

Krishna Bharadwaj, BB. “Controlling Defects in CVD Grown Graphene : Device Application Perspective.” 2017. Web. 23 Jan 2021.

Vancouver:

Krishna Bharadwaj B. Controlling Defects in CVD Grown Graphene : Device Application Perspective. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/2868.

Council of Science Editors:

Krishna Bharadwaj B. Controlling Defects in CVD Grown Graphene : Device Application Perspective. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2868


Indian Institute of Science

9. Manjanath, Aaditya. Engineering the Properties of Elemental 2D Materials using First-principles Calculations.

Degree: PhD, Faculty of Engineering, 2017, Indian Institute of Science

 Our vision is as yet unsurpassed by machines because of the sophisticated representations of objects in our brains. This representation is vastly different from a… (more)

Subjects/Keywords: Device Miniaturation; Nanoelectronics to Spintronics; 2D Elemental Sheets; Silicene Nanoribbons; Stanene; SnS2; Graphene; Phosphorene; Sn Sheets; Germanene; Nano Science and Engineering

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APA (6th Edition):

Manjanath, A. (2017). Engineering the Properties of Elemental 2D Materials using First-principles Calculations. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2916

Chicago Manual of Style (16th Edition):

Manjanath, Aaditya. “Engineering the Properties of Elemental 2D Materials using First-principles Calculations.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/2916.

MLA Handbook (7th Edition):

Manjanath, Aaditya. “Engineering the Properties of Elemental 2D Materials using First-principles Calculations.” 2017. Web. 23 Jan 2021.

Vancouver:

Manjanath A. Engineering the Properties of Elemental 2D Materials using First-principles Calculations. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/2916.

Council of Science Editors:

Manjanath A. Engineering the Properties of Elemental 2D Materials using First-principles Calculations. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2916


Indian Institute of Science

10. Yaddanapudi, G R Krishna. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.

Degree: PhD, Faculty of Engineering, 2017, Indian Institute of Science

 Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and… (more)

Subjects/Keywords: Semiconductors; Nitrides; Gallium Nitride; N-Polar Gallium Nitride; Metal Organic Chemical Vapor Deposition (MOCVD); Galllium Nitride Growth; High Temperature Gallium Nitride; Low Temperature Gallium Nitride; GaN; Materials Engineering

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APA (6th Edition):

Yaddanapudi, G. R. K. (2017). Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2662

Chicago Manual of Style (16th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/2662.

MLA Handbook (7th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2017. Web. 23 Jan 2021.

Vancouver:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/2662.

Council of Science Editors:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2662


Indian Institute of Science

11. Kumar, V Kranthi. Large Area MoS2 : Growth and Device Characteristics.

Degree: PhD, Faculty of Science, 2018, Indian Institute of Science

 There has been growing interest in two-dimensional (2-D) crystals beyond graphene for next-generation nano-electronics. Transition metal dichalcogenides have been most widely studied, for their semiconducting… (more)

Subjects/Keywords: Nano Electronics; Chemical Vapor Deposition (CVD); Two Dimensional Crystal; Optoelectronic Applications; MoS2; Transition Metal Di-Chalcogemides (TMDs); Mo-S-C-O-H System; 2D Crystals; Nano Science

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APA (6th Edition):

Kumar, V. K. (2018). Large Area MoS2 : Growth and Device Characteristics. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/3760

Chicago Manual of Style (16th Edition):

Kumar, V Kranthi. “Large Area MoS2 : Growth and Device Characteristics.” 2018. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/3760.

MLA Handbook (7th Edition):

Kumar, V Kranthi. “Large Area MoS2 : Growth and Device Characteristics.” 2018. Web. 23 Jan 2021.

Vancouver:

Kumar VK. Large Area MoS2 : Growth and Device Characteristics. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2018. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/3760.

Council of Science Editors:

Kumar VK. Large Area MoS2 : Growth and Device Characteristics. [Doctoral Dissertation]. Indian Institute of Science; 2018. Available from: http://etd.iisc.ac.in/handle/2005/3760

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