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You searched for +publisher:"Indian Institute of Science" +contributor:("Mahapatra, Santanu"). Showing records 1 – 11 of 11 total matches.

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Indian Institute of Science

1. Ramesha, A. Sub-Threshold Slope Modeling & Gate Alignment Issues In Tunnel Field Effect Transistor.

Degree: 2008, Indian Institute of Science

 The Tunnel Field Effect Transistor (TFET) with sub-60mV/decade Sub-threshold slope and extremely high ION/IOFF ratio has attracted enough attention for low standby power (LSTP) applications… (more)

Subjects/Keywords: Tunnel-FET; Tunnel Field Effect Transistor (TFET); Band-to-Band Tunneling; Double Gate Tunnel Field Effect Transistor; Tunnel Field Effect Transistors - Modeling; Tunnel Field Effect Transistors - Gate Alignment; n-channel Double Gate TFET (nDGTFET); Electronic Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ramesha, A. (2008). Sub-Threshold Slope Modeling & Gate Alignment Issues In Tunnel Field Effect Transistor. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/792

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ramesha, A. “Sub-Threshold Slope Modeling & Gate Alignment Issues In Tunnel Field Effect Transistor.” 2008. Thesis, Indian Institute of Science. Accessed February 17, 2020. http://hdl.handle.net/2005/792.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ramesha, A. “Sub-Threshold Slope Modeling & Gate Alignment Issues In Tunnel Field Effect Transistor.” 2008. Web. 17 Feb 2020.

Vancouver:

Ramesha A. Sub-Threshold Slope Modeling & Gate Alignment Issues In Tunnel Field Effect Transistor. [Internet] [Thesis]. Indian Institute of Science; 2008. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/2005/792.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ramesha A. Sub-Threshold Slope Modeling & Gate Alignment Issues In Tunnel Field Effect Transistor. [Thesis]. Indian Institute of Science; 2008. Available from: http://hdl.handle.net/2005/792

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

2. Kumar, P Rakesh. Analytical Modeling Of Quantum Thershold Voltage For Short Channel Multi Gate Silicon Nanowire Transistors.

Degree: 2009, Indian Institute of Science

 Silicon nanowire based multiple gate metal oxide field effect transistors(MG-MOSFET) appear as replacements for conventional bulk transistors in post 45nm technology nodes. In such transistors… (more)

Subjects/Keywords: Transistors; Silicon Nanowire Transistors; Quantum Threshold Voltage; Threshold Voltage Models; Transistors - Modeling; Double Gate Transistor; Cylindrical Gate Transistor; Quad Gate Transistor; Tri Gate Transistor; Cylindrical Gate All-around Transistor; Silicon Nanowire Transistor; MOSFET; Electronic Engineering

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APA (6th Edition):

Kumar, P. R. (2009). Analytical Modeling Of Quantum Thershold Voltage For Short Channel Multi Gate Silicon Nanowire Transistors. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/969

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kumar, P Rakesh. “Analytical Modeling Of Quantum Thershold Voltage For Short Channel Multi Gate Silicon Nanowire Transistors.” 2009. Thesis, Indian Institute of Science. Accessed February 17, 2020. http://hdl.handle.net/2005/969.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kumar, P Rakesh. “Analytical Modeling Of Quantum Thershold Voltage For Short Channel Multi Gate Silicon Nanowire Transistors.” 2009. Web. 17 Feb 2020.

Vancouver:

Kumar PR. Analytical Modeling Of Quantum Thershold Voltage For Short Channel Multi Gate Silicon Nanowire Transistors. [Internet] [Thesis]. Indian Institute of Science; 2009. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/2005/969.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kumar PR. Analytical Modeling Of Quantum Thershold Voltage For Short Channel Multi Gate Silicon Nanowire Transistors. [Thesis]. Indian Institute of Science; 2009. Available from: http://hdl.handle.net/2005/969

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

3. Rex, A. Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube.

Degree: 2011, Indian Institute of Science

 Single-Walled Carbon Nanotube (SWCNT) based Very Large Scale Integrated circuit (VLSI) interconnect is one of the emerging technologies, and has the potential to overcome the… (more)

Subjects/Keywords: Single Walled Carbon Nanotube (SWCNT); Very Large Scale Integration; Metallic Single Walled Carbon Nanotube - Thermal Conductivity Model; Single Walled Carbon Nanotube Interconnect; Very Large Scale Integrated Circuit (VLSI); Nanotechnology

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rex, A. (2011). Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2096

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rex, A. “Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube.” 2011. Thesis, Indian Institute of Science. Accessed February 17, 2020. http://hdl.handle.net/2005/2096.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rex, A. “Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube.” 2011. Web. 17 Feb 2020.

Vancouver:

Rex A. Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube. [Internet] [Thesis]. Indian Institute of Science; 2011. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/2005/2096.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rex A. Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube. [Thesis]. Indian Institute of Science; 2011. Available from: http://hdl.handle.net/2005/2096

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

4. Dan, Surya Shankar. Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits.

Degree: 2009, Indian Institute of Science

 Although scalingof CMOS technology has been predicted to continue for another decade, novel technological solutions are required to overcome the fundamental limitations of the decananometer… (more)

Subjects/Keywords: Transistor Devices (Electronics); Energy Quantization; Inverter Logic; Single Electron Transistor (SET); Monte Carlo Simulation; Orthodox Theory; Compact Modeling; Single Electron Tunneling; Noise Margin; SET Circuits; Single Electron Inverter Performance; Coulomb Blockade; Negative Differential Resistance; Electronic Engineering

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APA (6th Edition):

Dan, S. S. (2009). Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/666

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dan, Surya Shankar. “Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits.” 2009. Thesis, Indian Institute of Science. Accessed February 17, 2020. http://hdl.handle.net/2005/666.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dan, Surya Shankar. “Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits.” 2009. Web. 17 Feb 2020.

Vancouver:

Dan SS. Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits. [Internet] [Thesis]. Indian Institute of Science; 2009. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/2005/666.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dan SS. Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits. [Thesis]. Indian Institute of Science; 2009. Available from: http://hdl.handle.net/2005/666

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

5. Ray, Biswajit. Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective.

Degree: 2008, Indian Institute of Science

 Undoped body multi gate (MG) Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are appearing as replacements for single gate bulk MOSFET in forthcoming sub-45nm technology… (more)

Subjects/Keywords: Transistors (Electronics); Electrostatics; Transistors - Modeling; Gate-All-Around (GAA) Transistor; Double Gate Transistor; Omega Gate Nanowire Transistor; Metal Oxide Semiconductor Field Effect Transistors(MOSFET); Undoped Body Multi Gate Transistor; Electronic Engineering

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APA (6th Edition):

Ray, B. (2008). Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/741

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ray, Biswajit. “Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective.” 2008. Thesis, Indian Institute of Science. Accessed February 17, 2020. http://hdl.handle.net/2005/741.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ray, Biswajit. “Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective.” 2008. Web. 17 Feb 2020.

Vancouver:

Ray B. Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective. [Internet] [Thesis]. Indian Institute of Science; 2008. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/2005/741.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ray B. Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective. [Thesis]. Indian Institute of Science; 2008. Available from: http://hdl.handle.net/2005/741

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

6. Sharan, Neha. Compact Modeling of Short Channel Common Double Gate MOSFET Adapted to Gate-Oxide Thickness Asymmetry.

Degree: 2014, Indian Institute of Science

 Compact Models are the physically based accurate mathematical description of the cir-cuit elements, which are computationally efficient enough to be incorporated in circuit simulators so… (more)

Subjects/Keywords: Metal Semiconductor Field Effect Transistors (MOSFET); Common Double Gate (CDG) MOSFETs-Compact Modeling; Electronic Circuits-Design; Transistor Circuits; MOSFETs-Core Model; Double Gate MOSFETs; Asymmetric CDG MOSFETs; Semiconductor Device Modeling; Gate Oxide Thickness Asymmetry; Gate Oxide Asymmetry; Electronic Systems Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Sharan, N. (2014). Compact Modeling of Short Channel Common Double Gate MOSFET Adapted to Gate-Oxide Thickness Asymmetry. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/2005/3489 ; http://etd.iisc.ernet.in/abstracts/4356/G26589-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sharan, Neha. “Compact Modeling of Short Channel Common Double Gate MOSFET Adapted to Gate-Oxide Thickness Asymmetry.” 2014. Thesis, Indian Institute of Science. Accessed February 17, 2020. http://etd.iisc.ernet.in/2005/3489 ; http://etd.iisc.ernet.in/abstracts/4356/G26589-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sharan, Neha. “Compact Modeling of Short Channel Common Double Gate MOSFET Adapted to Gate-Oxide Thickness Asymmetry.” 2014. Web. 17 Feb 2020.

Vancouver:

Sharan N. Compact Modeling of Short Channel Common Double Gate MOSFET Adapted to Gate-Oxide Thickness Asymmetry. [Internet] [Thesis]. Indian Institute of Science; 2014. [cited 2020 Feb 17]. Available from: http://etd.iisc.ernet.in/2005/3489 ; http://etd.iisc.ernet.in/abstracts/4356/G26589-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sharan N. Compact Modeling of Short Channel Common Double Gate MOSFET Adapted to Gate-Oxide Thickness Asymmetry. [Thesis]. Indian Institute of Science; 2014. Available from: http://etd.iisc.ernet.in/2005/3489 ; http://etd.iisc.ernet.in/abstracts/4356/G26589-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

7. Srivatsava, J. Compact Modeling Of Asymmetric/Independent Double Gate MOSFET.

Degree: 2012, Indian Institute of Science

 For the past 40 years, relentless focus on Moore’s Law transistor scaling has provided ever-increasing transistor performance and density. In order to continue the technology… (more)

Subjects/Keywords: Asymmetric Double Gate MOSFET; Asymmetric Double Gate Transistor - Compact Modeling; Transistor Performance; Common-Gate Asymmetric Double Gate MOSFET; Independent-gate Asymmetric Double Gate MOSFET; DG MOSFET; Double Gate MOSFET; Metal Oxide Semiconductor Field Effect Transistor; Electronic Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Srivatsava, J. (2012). Compact Modeling Of Asymmetric/Independent Double Gate MOSFET. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2346

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Srivatsava, J. “Compact Modeling Of Asymmetric/Independent Double Gate MOSFET.” 2012. Thesis, Indian Institute of Science. Accessed February 17, 2020. http://hdl.handle.net/2005/2346.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Srivatsava, J. “Compact Modeling Of Asymmetric/Independent Double Gate MOSFET.” 2012. Web. 17 Feb 2020.

Vancouver:

Srivatsava J. Compact Modeling Of Asymmetric/Independent Double Gate MOSFET. [Internet] [Thesis]. Indian Institute of Science; 2012. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/2005/2346.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Srivatsava J. Compact Modeling Of Asymmetric/Independent Double Gate MOSFET. [Thesis]. Indian Institute of Science; 2012. Available from: http://hdl.handle.net/2005/2346

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

8. Rex, A. Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube.

Degree: 2011, Indian Institute of Science

 Single-Walled Carbon Nanotube (SWCNT) based Very Large Scale Integrated circuit (VLSI) interconnect is one of the emerging technologies, and has the potential to overcome the… (more)

Subjects/Keywords: Single Walled Carbon Nanotube (SWCNT); Very Large Scale Integration; Metallic Single Walled Carbon Nanotube - Thermal Conductivity Model; Single Walled Carbon Nanotube Interconnect; Very Large Scale Integrated Circuit (VLSI); Nanotechnology

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rex, A. (2011). Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/handle/2005/2096 ; http://etd.ncsi.iisc.ernet.in/abstracts/2697/G24773-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rex, A. “Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube.” 2011. Thesis, Indian Institute of Science. Accessed February 17, 2020. http://etd.iisc.ernet.in/handle/2005/2096 ; http://etd.ncsi.iisc.ernet.in/abstracts/2697/G24773-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rex, A. “Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube.” 2011. Web. 17 Feb 2020.

Vancouver:

Rex A. Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube. [Internet] [Thesis]. Indian Institute of Science; 2011. [cited 2020 Feb 17]. Available from: http://etd.iisc.ernet.in/handle/2005/2096 ; http://etd.ncsi.iisc.ernet.in/abstracts/2697/G24773-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rex A. Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube. [Thesis]. Indian Institute of Science; 2011. Available from: http://etd.iisc.ernet.in/handle/2005/2096 ; http://etd.ncsi.iisc.ernet.in/abstracts/2697/G24773-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

9. Srivatsava, J. Compact Modeling Of Asymmetric/Independent Double Gate MOSFET.

Degree: 2012, Indian Institute of Science

 For the past 40 years, relentless focus on Moore’s Law transistor scaling has provided ever-increasing transistor performance and density. In order to continue the technology… (more)

Subjects/Keywords: Asymmetric Double Gate MOSFET; Asymmetric Double Gate Transistor - Compact Modeling; Transistor Performance; Common-Gate Asymmetric Double Gate MOSFET; Independent-gate Asymmetric Double Gate MOSFET; DG MOSFET; Double Gate MOSFET; Metal Oxide Semiconductor Field Effect Transistor; Electronic Engineering

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Srivatsava, J. (2012). Compact Modeling Of Asymmetric/Independent Double Gate MOSFET. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/handle/2005/2346 ; http://etd.ncsi.iisc.ernet.in/abstracts/3017/G25480-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Srivatsava, J. “Compact Modeling Of Asymmetric/Independent Double Gate MOSFET.” 2012. Thesis, Indian Institute of Science. Accessed February 17, 2020. http://etd.iisc.ernet.in/handle/2005/2346 ; http://etd.ncsi.iisc.ernet.in/abstracts/3017/G25480-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Srivatsava, J. “Compact Modeling Of Asymmetric/Independent Double Gate MOSFET.” 2012. Web. 17 Feb 2020.

Vancouver:

Srivatsava J. Compact Modeling Of Asymmetric/Independent Double Gate MOSFET. [Internet] [Thesis]. Indian Institute of Science; 2012. [cited 2020 Feb 17]. Available from: http://etd.iisc.ernet.in/handle/2005/2346 ; http://etd.ncsi.iisc.ernet.in/abstracts/3017/G25480-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Srivatsava J. Compact Modeling Of Asymmetric/Independent Double Gate MOSFET. [Thesis]. Indian Institute of Science; 2012. Available from: http://etd.iisc.ernet.in/handle/2005/2346 ; http://etd.ncsi.iisc.ernet.in/abstracts/3017/G25480-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

10. Ghosh, Ram Krishna. Exploration of Real and Complex Dispesion Realtionship of Nanomaterials for Next Generation Transistor Applications.

Degree: 2013, Indian Institute of Science

 Technology scaling beyond Moore’s law demands cutting-edge solutions of the gate length scaling in sub-10 nm regime for low power high speed operations. Recently SOI… (more)

Subjects/Keywords: Nanoelectronics; Next Generation Nano-Electronic Devices; Silicon Nanowires; Silicon Nanotechnology; Hybrid Graphene; Transition Metal Chalcogenide; Nanomaterials; SiNW; Nanomaterials - Transistor Applications; Band Gap Model; MoS2; Nanoribbons; Tunnel Field Effect Transistors (TFETs); Nanotechnology

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ghosh, R. K. (2013). Exploration of Real and Complex Dispesion Realtionship of Nanomaterials for Next Generation Transistor Applications. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/3288

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ghosh, Ram Krishna. “Exploration of Real and Complex Dispesion Realtionship of Nanomaterials for Next Generation Transistor Applications.” 2013. Thesis, Indian Institute of Science. Accessed February 17, 2020. http://hdl.handle.net/2005/3288.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ghosh, Ram Krishna. “Exploration of Real and Complex Dispesion Realtionship of Nanomaterials for Next Generation Transistor Applications.” 2013. Web. 17 Feb 2020.

Vancouver:

Ghosh RK. Exploration of Real and Complex Dispesion Realtionship of Nanomaterials for Next Generation Transistor Applications. [Internet] [Thesis]. Indian Institute of Science; 2013. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/2005/3288.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ghosh RK. Exploration of Real and Complex Dispesion Realtionship of Nanomaterials for Next Generation Transistor Applications. [Thesis]. Indian Institute of Science; 2013. Available from: http://hdl.handle.net/2005/3288

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

11. Verma, Rekha. Investigation of Electro-thermal and Thermoelectric Properties of Carbon Nanomaterials.

Degree: 2013, Indian Institute of Science

 Due to the aggressive downscaling of the CMOS technology, power and current densities are increasing inside the chip. The limiting current conduction capacity(106 Acm−2)and thermal… (more)

Subjects/Keywords: Carbon Nanomaterials; Carbon Nanotubes; Graphene; Carbon Nanomaterials - Thermoelectric Properties; Carbon Nanomaterials - ElectroThermal Properties; Carbon Nanomaterials - Synthesis; Carbon Nanomaterials - Electromigration; Single Layer Graphene; Carbon Materials - Thermal Management; Metallic Single Walled Carbon Nanotubes; Metallic SWCNT; Single Layer Graphene (SLG); Nanotechnology

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Verma, R. (2013). Investigation of Electro-thermal and Thermoelectric Properties of Carbon Nanomaterials. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/2005/3360 ; http://etd.iisc.ernet.in/abstracts/4228/G25761-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Verma, Rekha. “Investigation of Electro-thermal and Thermoelectric Properties of Carbon Nanomaterials.” 2013. Thesis, Indian Institute of Science. Accessed February 17, 2020. http://etd.iisc.ernet.in/2005/3360 ; http://etd.iisc.ernet.in/abstracts/4228/G25761-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Verma, Rekha. “Investigation of Electro-thermal and Thermoelectric Properties of Carbon Nanomaterials.” 2013. Web. 17 Feb 2020.

Vancouver:

Verma R. Investigation of Electro-thermal and Thermoelectric Properties of Carbon Nanomaterials. [Internet] [Thesis]. Indian Institute of Science; 2013. [cited 2020 Feb 17]. Available from: http://etd.iisc.ernet.in/2005/3360 ; http://etd.iisc.ernet.in/abstracts/4228/G25761-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Verma R. Investigation of Electro-thermal and Thermoelectric Properties of Carbon Nanomaterials. [Thesis]. Indian Institute of Science; 2013. Available from: http://etd.iisc.ernet.in/2005/3360 ; http://etd.iisc.ernet.in/abstracts/4228/G25761-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.