Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for +publisher:"Georgia Tech" +contributor:("Yoder, Paul D."). Showing records 1 – 17 of 17 total matches.

Search Limiters

Last 2 Years | English Only

No search limiters apply to these results.

▼ Search Limiters


Georgia Tech

1. Philip, Timothy. Error analysis of boundary conditions in the Wigner transport equation.

Degree: MS, Electrical and Computer Engineering, 2014, Georgia Tech

 This work presents a method to quantitatively calculate the error induced through application of approximate boundary conditions in quantum charge transport simulations based on the… (more)

Subjects/Keywords: Wigner transport equation; Boundary conditions; Error analysis

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Philip, T. (2014). Error analysis of boundary conditions in the Wigner transport equation. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54031

Chicago Manual of Style (16th Edition):

Philip, Timothy. “Error analysis of boundary conditions in the Wigner transport equation.” 2014. Masters Thesis, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/54031.

MLA Handbook (7th Edition):

Philip, Timothy. “Error analysis of boundary conditions in the Wigner transport equation.” 2014. Web. 17 Feb 2020.

Vancouver:

Philip T. Error analysis of boundary conditions in the Wigner transport equation. [Internet] [Masters thesis]. Georgia Tech; 2014. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/54031.

Council of Science Editors:

Philip T. Error analysis of boundary conditions in the Wigner transport equation. [Masters Thesis]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/54031


Georgia Tech

2. Raghunathan, Uppili Srinivasan. TCAD modeling of mixed-mode degradation in SiGe HBTs.

Degree: MS, Electrical and Computer Engineering, 2014, Georgia Tech

 The objective of this work is to develop an effective TCAD based hot-carrier degradation model in predicting the damage that a SiGe HBT undergoes as… (more)

Subjects/Keywords: SiGe HBT; Hot-carrier; Reliability modeling; Lucky electron model

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Raghunathan, U. S. (2014). TCAD modeling of mixed-mode degradation in SiGe HBTs. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54315

Chicago Manual of Style (16th Edition):

Raghunathan, Uppili Srinivasan. “TCAD modeling of mixed-mode degradation in SiGe HBTs.” 2014. Masters Thesis, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/54315.

MLA Handbook (7th Edition):

Raghunathan, Uppili Srinivasan. “TCAD modeling of mixed-mode degradation in SiGe HBTs.” 2014. Web. 17 Feb 2020.

Vancouver:

Raghunathan US. TCAD modeling of mixed-mode degradation in SiGe HBTs. [Internet] [Masters thesis]. Georgia Tech; 2014. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/54315.

Council of Science Editors:

Raghunathan US. TCAD modeling of mixed-mode degradation in SiGe HBTs. [Masters Thesis]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/54315


Georgia Tech

3. Fitzharris, Margaret. Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes.

Degree: MS, Electrical and Computer Engineering, 2016, Georgia Tech

 A physics-based model incorporating the UTC (uni-traveling carrier) photodiode (PD) in the limit of weak nonlinearity was used in order to characterize the effects of… (more)

Subjects/Keywords: Nonlinearity; Photodiode; IMD3; IP3

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fitzharris, M. (2016). Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55069

Chicago Manual of Style (16th Edition):

Fitzharris, Margaret. “Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes.” 2016. Masters Thesis, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/55069.

MLA Handbook (7th Edition):

Fitzharris, Margaret. “Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes.” 2016. Web. 17 Feb 2020.

Vancouver:

Fitzharris M. Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes. [Internet] [Masters thesis]. Georgia Tech; 2016. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/55069.

Council of Science Editors:

Fitzharris M. Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes. [Masters Thesis]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55069


Georgia Tech

4. Tellekamp, Marshall B. Lithium perchlorate as a solid/liquid state oxygen source for molecular beam epitaxy.

Degree: MS, Electrical and Computer Engineering, 2015, Georgia Tech

 In order to grow metastable transition metal suboxides, LiClO4 is theorized, designed, and tested as an alternative oxygen source for molecular beam epitaxy growth of… (more)

Subjects/Keywords: Molecular beam epitaxy; Lithium perchlorate; Niobium oxides; Lithium niobite; Auger electron spectroscopy

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tellekamp, M. B. (2015). Lithium perchlorate as a solid/liquid state oxygen source for molecular beam epitaxy. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55544

Chicago Manual of Style (16th Edition):

Tellekamp, Marshall B. “Lithium perchlorate as a solid/liquid state oxygen source for molecular beam epitaxy.” 2015. Masters Thesis, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/55544.

MLA Handbook (7th Edition):

Tellekamp, Marshall B. “Lithium perchlorate as a solid/liquid state oxygen source for molecular beam epitaxy.” 2015. Web. 17 Feb 2020.

Vancouver:

Tellekamp MB. Lithium perchlorate as a solid/liquid state oxygen source for molecular beam epitaxy. [Internet] [Masters thesis]. Georgia Tech; 2015. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/55544.

Council of Science Editors:

Tellekamp MB. Lithium perchlorate as a solid/liquid state oxygen source for molecular beam epitaxy. [Masters Thesis]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/55544


Georgia Tech

5. Shank, Joshua. Generalized model and applications for volatile memristive devices.

Degree: MS, Electrical and Computer Engineering, 2015, Georgia Tech

 The objective of the proposed research is to develop a simple simulation model that describes volatile memristive devices and enables the evaluation of these devices… (more)

Subjects/Keywords: Volatile memristor; Model

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Shank, J. (2015). Generalized model and applications for volatile memristive devices. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55549

Chicago Manual of Style (16th Edition):

Shank, Joshua. “Generalized model and applications for volatile memristive devices.” 2015. Masters Thesis, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/55549.

MLA Handbook (7th Edition):

Shank, Joshua. “Generalized model and applications for volatile memristive devices.” 2015. Web. 17 Feb 2020.

Vancouver:

Shank J. Generalized model and applications for volatile memristive devices. [Internet] [Masters thesis]. Georgia Tech; 2015. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/55549.

Council of Science Editors:

Shank J. Generalized model and applications for volatile memristive devices. [Masters Thesis]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/55549


Georgia Tech

6. Wier, Brian R. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.

Degree: MS, Electrical and Computer Engineering, 2015, Georgia Tech

 This thesis describes the characterization and modeling of various hot carrier degradation mechanisms in silicon-germanium heterojunction bipolar transistors. An analysis of measured stress data and… (more)

Subjects/Keywords: Hot carrier; Reliability; SiGe HBT

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wier, B. R. (2015). Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60401

Chicago Manual of Style (16th Edition):

Wier, Brian R. “Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.” 2015. Masters Thesis, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/60401.

MLA Handbook (7th Edition):

Wier, Brian R. “Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.” 2015. Web. 17 Feb 2020.

Vancouver:

Wier BR. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. [Internet] [Masters thesis]. Georgia Tech; 2015. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/60401.

Council of Science Editors:

Wier BR. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. [Masters Thesis]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/60401


Georgia Tech

7. Gunning, Brendan. Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 P-type doping of III-nitrides is explored in order to better understand the shortcomings of existing p-type material and achieve higher hole concentrations. Using a modified… (more)

Subjects/Keywords: III-nitride; Semiconductor; Molecular beam epitaxy; Gallium nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gunning, B. (2015). Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58142

Chicago Manual of Style (16th Edition):

Gunning, Brendan. “Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell.” 2015. Doctoral Dissertation, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/58142.

MLA Handbook (7th Edition):

Gunning, Brendan. “Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell.” 2015. Web. 17 Feb 2020.

Vancouver:

Gunning B. Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/58142.

Council of Science Editors:

Gunning B. Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/58142


Georgia Tech

8. Kao, Tsung-Ting. Development and characterization of III-Nitride bipolar devices.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 III-nitride (III-N) materials have been widely used in optical devices such as blue light-emitting diodes today. On the other hand, III-N power electronics are also… (more)

Subjects/Keywords: III-N devices; Compound semiconductor

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kao, T. (2016). Development and characterization of III-Nitride bipolar devices. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59114

Chicago Manual of Style (16th Edition):

Kao, Tsung-Ting. “Development and characterization of III-Nitride bipolar devices.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/59114.

MLA Handbook (7th Edition):

Kao, Tsung-Ting. “Development and characterization of III-Nitride bipolar devices.” 2016. Web. 17 Feb 2020.

Vancouver:

Kao T. Development and characterization of III-Nitride bipolar devices. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/59114.

Council of Science Editors:

Kao T. Development and characterization of III-Nitride bipolar devices. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/59114


Georgia Tech

9. Liu, Yuh-Shiuan. Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers.

Degree: PhD, Electrical and Computer Engineering, 2018, Georgia Tech

 This thesis describes the development of III – nitride materials for ultraviolet (UV) vertical-cavity surface-emitting lasers or VCSELs. The goal of this research is to develop… (more)

Subjects/Keywords: MOCVD; VCSEL; III-N

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Liu, Y. (2018). Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60284

Chicago Manual of Style (16th Edition):

Liu, Yuh-Shiuan. “Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers.” 2018. Doctoral Dissertation, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/60284.

MLA Handbook (7th Edition):

Liu, Yuh-Shiuan. “Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers.” 2018. Web. 17 Feb 2020.

Vancouver:

Liu Y. Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers. [Internet] [Doctoral dissertation]. Georgia Tech; 2018. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/60284.

Council of Science Editors:

Liu Y. Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers. [Doctoral Dissertation]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/60284


Georgia Tech

10. Tellekamp, Marshall B. Lithium niobium oxide multifunctional materials and applications in neuromorphic computing.

Degree: PhD, Electrical and Computer Engineering, 2017, Georgia Tech

 This work explores the growth fundamentals and multifunctional applications of materials in the Li-Nb-O family with specific focus on the memristive applications of LiNbO2 as… (more)

Subjects/Keywords: Lithium niobite; Molecular beam epitaxy; Lithium niobate; Thin films; Neuromorphic computing

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tellekamp, M. B. (2017). Lithium niobium oxide multifunctional materials and applications in neuromorphic computing. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60701

Chicago Manual of Style (16th Edition):

Tellekamp, Marshall B. “Lithium niobium oxide multifunctional materials and applications in neuromorphic computing.” 2017. Doctoral Dissertation, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/60701.

MLA Handbook (7th Edition):

Tellekamp, Marshall B. “Lithium niobium oxide multifunctional materials and applications in neuromorphic computing.” 2017. Web. 17 Feb 2020.

Vancouver:

Tellekamp MB. Lithium niobium oxide multifunctional materials and applications in neuromorphic computing. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/60701.

Council of Science Editors:

Tellekamp MB. Lithium niobium oxide multifunctional materials and applications in neuromorphic computing. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/60701


Georgia Tech

11. Masood, Mir. Digitally-Assisted, Efficiency Enhanced, Linear RF Power Amplifier Architectures.

Degree: PhD, Electrical and Computer Engineering, 2018, Georgia Tech

 This dissertation presents the use of advanced digital techniques in the development of efficiency enhanced, linearized power amplifier (PA) architectures. In this research, digital enhancements… (more)

Subjects/Keywords: pre-distortion; power amplifier; Doherty

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Masood, M. (2018). Digitally-Assisted, Efficiency Enhanced, Linear RF Power Amplifier Architectures. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/61115

Chicago Manual of Style (16th Edition):

Masood, Mir. “Digitally-Assisted, Efficiency Enhanced, Linear RF Power Amplifier Architectures.” 2018. Doctoral Dissertation, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/61115.

MLA Handbook (7th Edition):

Masood, Mir. “Digitally-Assisted, Efficiency Enhanced, Linear RF Power Amplifier Architectures.” 2018. Web. 17 Feb 2020.

Vancouver:

Masood M. Digitally-Assisted, Efficiency Enhanced, Linear RF Power Amplifier Architectures. [Internet] [Doctoral dissertation]. Georgia Tech; 2018. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/61115.

Council of Science Editors:

Masood M. Digitally-Assisted, Efficiency Enhanced, Linear RF Power Amplifier Architectures. [Doctoral Dissertation]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/61115


Georgia Tech

12. Dickerson, Jeramy Ray. Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 Innovative electronic device concepts that use polarization charges to provide improved performance were validated. The strength of the electric fields created by polarization charges (PCs)… (more)

Subjects/Keywords: III-N; Polarization; GaN; InGaN; Solar cells; HEMT; Resonant tunneling; Tunneling; Multi-junction solar cells; Quantum wells; Semiconductors; Photovoltaic cells; Tunneling (Physics)

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Dickerson, J. R. (2014). Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/51793

Chicago Manual of Style (16th Edition):

Dickerson, Jeramy Ray. “Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices.” 2014. Doctoral Dissertation, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/51793.

MLA Handbook (7th Edition):

Dickerson, Jeramy Ray. “Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices.” 2014. Web. 17 Feb 2020.

Vancouver:

Dickerson JR. Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/51793.

Council of Science Editors:

Dickerson JR. Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/51793


Georgia Tech

13. Alam, Mahbub. Nanoscale optical devices based on phase coherent electron transport.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The optical interaction of phase coherent electron in an open system has been investigated. It has been found that after optical excitation electron wavefunction evolves… (more)

Subjects/Keywords: Opto coherent electronics; Quantum interference; Bloch scale illumination

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Alam, M. (2016). Nanoscale optical devices based on phase coherent electron transport. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59119

Chicago Manual of Style (16th Edition):

Alam, Mahbub. “Nanoscale optical devices based on phase coherent electron transport.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/59119.

MLA Handbook (7th Edition):

Alam, Mahbub. “Nanoscale optical devices based on phase coherent electron transport.” 2016. Web. 17 Feb 2020.

Vancouver:

Alam M. Nanoscale optical devices based on phase coherent electron transport. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/59119.

Council of Science Editors:

Alam M. Nanoscale optical devices based on phase coherent electron transport. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/59119


Georgia Tech

14. Fleetwood, Zachary Evan. Qualifying silicon-germanium electronics for harsh radiation environments.

Degree: PhD, Electrical and Computer Engineering, 2018, Georgia Tech

 The objective of this thesis is to investigate the robustness of Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) to radiation-induced damage. The work described in this… (more)

Subjects/Keywords: SiGe HBT; TID; SEE; Radiation; Superjunction; DD; Profile modifications

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fleetwood, Z. E. (2018). Qualifying silicon-germanium electronics for harsh radiation environments. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59891

Chicago Manual of Style (16th Edition):

Fleetwood, Zachary Evan. “Qualifying silicon-germanium electronics for harsh radiation environments.” 2018. Doctoral Dissertation, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/59891.

MLA Handbook (7th Edition):

Fleetwood, Zachary Evan. “Qualifying silicon-germanium electronics for harsh radiation environments.” 2018. Web. 17 Feb 2020.

Vancouver:

Fleetwood ZE. Qualifying silicon-germanium electronics for harsh radiation environments. [Internet] [Doctoral dissertation]. Georgia Tech; 2018. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/59891.

Council of Science Editors:

Fleetwood ZE. Qualifying silicon-germanium electronics for harsh radiation environments. [Doctoral Dissertation]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/59891

15. Turmaud, Jean-Philippe. Variable range hopping conduction in the epitaxial graphene buffer layer on SiC(0001).

Degree: PhD, Physics, 2018, Georgia Tech

 The properties of epitaxial graphene grown by thermal decomposition of hexagonal silicon carbide (SiC) have been the focus of extensive research for several decades now.… (more)

Subjects/Keywords: Epitaxial graphene; Buffer layer; Variable range hopping conduction; Silicon carbide; Electronic transport; Image charge

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Turmaud, J. (2018). Variable range hopping conduction in the epitaxial graphene buffer layer on SiC(0001). (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60254

Chicago Manual of Style (16th Edition):

Turmaud, Jean-Philippe. “Variable range hopping conduction in the epitaxial graphene buffer layer on SiC(0001).” 2018. Doctoral Dissertation, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/60254.

MLA Handbook (7th Edition):

Turmaud, Jean-Philippe. “Variable range hopping conduction in the epitaxial graphene buffer layer on SiC(0001).” 2018. Web. 17 Feb 2020.

Vancouver:

Turmaud J. Variable range hopping conduction in the epitaxial graphene buffer layer on SiC(0001). [Internet] [Doctoral dissertation]. Georgia Tech; 2018. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/60254.

Council of Science Editors:

Turmaud J. Variable range hopping conduction in the epitaxial graphene buffer layer on SiC(0001). [Doctoral Dissertation]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/60254

16. Lochner, Zachary M. Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 The material and device characteristics of InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition are examined. Two structures grown on sapphire with… (more)

Subjects/Keywords: Metalorganic chemical vapor deposition; Heterojunction bipolar transistor; III-nitrides; Gallium nitride; Ultraviolet laser diode; Chemical vapor deposition; Vapor-plating; Epitaxy; Semiconductors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lochner, Z. M. (2013). Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/49032

Chicago Manual of Style (16th Edition):

Lochner, Zachary M. “Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition.” 2013. Doctoral Dissertation, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/49032.

MLA Handbook (7th Edition):

Lochner, Zachary M. “Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition.” 2013. Web. 17 Feb 2020.

Vancouver:

Lochner ZM. Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/49032.

Council of Science Editors:

Lochner ZM. Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/49032

17. Campbell, Philip Michael. Synthesis of large-area two-dimensional materials for vertical heterostructures.

Degree: PhD, Materials Science and Engineering, 2017, Georgia Tech

 Due to their intrinsic bandgap and thickness-dependent properties, transition metal dichalcogenides (TMDs) have attracted significant attention for applications in digital and analog electronics, flexible electronics,… (more)

Subjects/Keywords: Two-dimensional; Heterostructures; Electronic materials; Molybdenum disulfide; Steep-slope; Resonant tunneling

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Campbell, P. M. (2017). Synthesis of large-area two-dimensional materials for vertical heterostructures. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58286

Chicago Manual of Style (16th Edition):

Campbell, Philip Michael. “Synthesis of large-area two-dimensional materials for vertical heterostructures.” 2017. Doctoral Dissertation, Georgia Tech. Accessed February 17, 2020. http://hdl.handle.net/1853/58286.

MLA Handbook (7th Edition):

Campbell, Philip Michael. “Synthesis of large-area two-dimensional materials for vertical heterostructures.” 2017. Web. 17 Feb 2020.

Vancouver:

Campbell PM. Synthesis of large-area two-dimensional materials for vertical heterostructures. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1853/58286.

Council of Science Editors:

Campbell PM. Synthesis of large-area two-dimensional materials for vertical heterostructures. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/58286

.