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You searched for +publisher:"Georgia Tech" +contributor:("Shyh-Chiang Shen"). Showing records 1 – 13 of 13 total matches.

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1. Madan, Anuj. Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications.

Degree: MS, Electrical and Computer Engineering, 2008, Georgia Tech

 The objective of proposed research is to investigate the potential of strained silicon and silicon-germanium (SiGe) based devices for RF/mixed-signal applications. Different device topologies, namely… (more)

Subjects/Keywords: RF; Mixed-signal; Silicon germanium; CMOS; Strained silicon; MODFET; SiGe; SOI; Field-effect transistors; Modulation-doped field-effect transistors; Germanium; Silicon; Extreme environments

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APA (6th Edition):

Madan, A. (2008). Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/24758

Chicago Manual of Style (16th Edition):

Madan, Anuj. “Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications.” 2008. Masters Thesis, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/24758.

MLA Handbook (7th Edition):

Madan, Anuj. “Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications.” 2008. Web. 28 Mar 2020.

Vancouver:

Madan A. Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications. [Internet] [Masters thesis]. Georgia Tech; 2008. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/24758.

Council of Science Editors:

Madan A. Physical understanding of strained-silicon and silicon-germanium FETs for RF and mixed-signal applications. [Masters Thesis]. Georgia Tech; 2008. Available from: http://hdl.handle.net/1853/24758

2. Yuan, Jiahui. Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization.

Degree: PhD, Electrical and Computer Engineering, 2010, Georgia Tech

 The objective of the proposed work is to study the behavior of SiGe HBTs at cryogenic temperatures and its relation to device scaling and optimization.… (more)

Subjects/Keywords: Heterojunction bipolar transistor; SiGe HBT; Terahertz speed; Cryogenic electronics; Silicon germanium; Bipolar transistors; Heterojunctions; Cryoelectronics; Low temperature engineering

Georgia Tech (90 to 45 nm). . . . . . . . . . . . . . . . . . . 116 x LIST OF… …HBT and four experimental SiGe HBTs simulated at Georgia Tech. . 117 73 Maximum… …experimental SiGe HBTs simulated at Georgia Tech… 

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APA (6th Edition):

Yuan, J. (2010). Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/33837

Chicago Manual of Style (16th Edition):

Yuan, Jiahui. “Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization.” 2010. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/33837.

MLA Handbook (7th Edition):

Yuan, Jiahui. “Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization.” 2010. Web. 28 Mar 2020.

Vancouver:

Yuan J. Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization. [Internet] [Doctoral dissertation]. Georgia Tech; 2010. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/33837.

Council of Science Editors:

Yuan J. Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization. [Doctoral Dissertation]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/33837

3. Horst, Stephen J. Frequency synthesis applications of SiGe BiCMOS processes.

Degree: PhD, Electrical and Computer Engineering, 2011, Georgia Tech

 Silicon Germanium BiCMOS technology has been demonstrated as an ideal platform for highly integrated systems requiring both high performance analog and RF circuits as well… (more)

Subjects/Keywords: Radiation hardening; Phase noise measurements; Frequency synthesizers; Signal generators; Semiconductors; Analog electronic systems

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APA (6th Edition):

Horst, S. J. (2011). Frequency synthesis applications of SiGe BiCMOS processes. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/42815

Chicago Manual of Style (16th Edition):

Horst, Stephen J. “Frequency synthesis applications of SiGe BiCMOS processes.” 2011. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/42815.

MLA Handbook (7th Edition):

Horst, Stephen J. “Frequency synthesis applications of SiGe BiCMOS processes.” 2011. Web. 28 Mar 2020.

Vancouver:

Horst SJ. Frequency synthesis applications of SiGe BiCMOS processes. [Internet] [Doctoral dissertation]. Georgia Tech; 2011. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/42815.

Council of Science Editors:

Horst SJ. Frequency synthesis applications of SiGe BiCMOS processes. [Doctoral Dissertation]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/42815

4. Fan, Shu-Hao. Convergence of millimeter-wave and photonic interconnect systems for very-high-throughput digital communication applications.

Degree: PhD, Electrical and Computer Engineering, 2011, Georgia Tech

 In the past, radio-frequency signals were commonly used for low-speed wireless electronic systems, and optical signals were used for multi-gigabit wired communication systems. However, as… (more)

Subjects/Keywords: Millimeter wave; Optical fiber communication; Radio-over-fiber; Millimeter waves; Digital communications; Gigabit communications; Electromagnetic waves

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APA (6th Edition):

Fan, S. (2011). Convergence of millimeter-wave and photonic interconnect systems for very-high-throughput digital communication applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/42888

Chicago Manual of Style (16th Edition):

Fan, Shu-Hao. “Convergence of millimeter-wave and photonic interconnect systems for very-high-throughput digital communication applications.” 2011. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/42888.

MLA Handbook (7th Edition):

Fan, Shu-Hao. “Convergence of millimeter-wave and photonic interconnect systems for very-high-throughput digital communication applications.” 2011. Web. 28 Mar 2020.

Vancouver:

Fan S. Convergence of millimeter-wave and photonic interconnect systems for very-high-throughput digital communication applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2011. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/42888.

Council of Science Editors:

Fan S. Convergence of millimeter-wave and photonic interconnect systems for very-high-throughput digital communication applications. [Doctoral Dissertation]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/42888

5. Kim, Eung Jung. Highly efficient supply modulator for mobile communication systems.

Degree: PhD, Electrical and Computer Engineering, 2011, Georgia Tech

 Switching frequency modulation techniques, an inductor current sensing circuit for fast switching converter, and a dual converter are proposed, and the simulation results and experimental… (more)

Subjects/Keywords: Supply modulator; DC-DC; Dithering; Random modulation; Mobile communication systems; Modulators (Electronics); Wireless communication systems; Radio frequency modulation Transmitters and transmission

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APA (6th Edition):

Kim, E. J. (2011). Highly efficient supply modulator for mobile communication systems. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/41058

Chicago Manual of Style (16th Edition):

Kim, Eung Jung. “Highly efficient supply modulator for mobile communication systems.” 2011. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/41058.

MLA Handbook (7th Edition):

Kim, Eung Jung. “Highly efficient supply modulator for mobile communication systems.” 2011. Web. 28 Mar 2020.

Vancouver:

Kim EJ. Highly efficient supply modulator for mobile communication systems. [Internet] [Doctoral dissertation]. Georgia Tech; 2011. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/41058.

Council of Science Editors:

Kim EJ. Highly efficient supply modulator for mobile communication systems. [Doctoral Dissertation]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/41058

6. Huang, Yong. InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm.

Degree: PhD, Electrical and Computer Engineering, 2010, Georgia Tech

 Light emitting transistors (LETs) and transistor lasers (TLs) are newly-emerging optoelectronic devices capable of emitting spontaneous or stimulated light while performing transistor actions. This dissertation… (more)

Subjects/Keywords: Doping; MOCVD; Transistor lasers; Light emitting transistors; Device physics; InP/InAlGaAs; Optoelectronic devices; Optoelectronics; Semiconductor doping; Electroluminescence

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APA (6th Edition):

Huang, Y. (2010). InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/37298

Chicago Manual of Style (16th Edition):

Huang, Yong. “InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm.” 2010. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/37298.

MLA Handbook (7th Edition):

Huang, Yong. “InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm.” 2010. Web. 28 Mar 2020.

Vancouver:

Huang Y. InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm. [Internet] [Doctoral dissertation]. Georgia Tech; 2010. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/37298.

Council of Science Editors:

Huang Y. InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm. [Doctoral Dissertation]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/37298

7. Beck, Sungho. An interference-cancellation receiver for multi-band and multi-standard wireless communication systems.

Degree: PhD, Electrical and Computer Engineering, 2011, Georgia Tech

 The dissertation presents novel methodologies to realize a multi-band and multi-standard receiver with an interference-cancellation capability. First, the receiver specifications are derived from the wireless… (more)

Subjects/Keywords: Integrated circuits; Transceiver; Wireless communication systems; Telecommunication systems

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APA (6th Edition):

Beck, S. (2011). An interference-cancellation receiver for multi-band and multi-standard wireless communication systems. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/44826

Chicago Manual of Style (16th Edition):

Beck, Sungho. “An interference-cancellation receiver for multi-band and multi-standard wireless communication systems.” 2011. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/44826.

MLA Handbook (7th Edition):

Beck, Sungho. “An interference-cancellation receiver for multi-band and multi-standard wireless communication systems.” 2011. Web. 28 Mar 2020.

Vancouver:

Beck S. An interference-cancellation receiver for multi-band and multi-standard wireless communication systems. [Internet] [Doctoral dissertation]. Georgia Tech; 2011. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/44826.

Council of Science Editors:

Beck S. An interference-cancellation receiver for multi-band and multi-standard wireless communication systems. [Doctoral Dissertation]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/44826


Georgia Tech

8. Chuang, Kevin. Multi-gigabit CMOS analog-to-digital converter and mixed-signal demodulator for low-power millimeter-wave communication systems.

Degree: PhD, Electrical and Computer Engineering, 2011, Georgia Tech

 The objective of the research is to develop high-speed ADCs and mixed-signal demodulator for multi-gigabit communication systems using millimeter-wave frequency bands in standard CMOS technology.… (more)

Subjects/Keywords: Analog-to-digital converter; Mixed-signal; Demodulator; Multi-gigabit; CMOS; Analog-to-digital converters; Metal oxide semiconductors, Complementary; Radio detectors; Millimeter wave communication systems

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APA (6th Edition):

Chuang, K. (2011). Multi-gigabit CMOS analog-to-digital converter and mixed-signal demodulator for low-power millimeter-wave communication systems. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/47814

Chicago Manual of Style (16th Edition):

Chuang, Kevin. “Multi-gigabit CMOS analog-to-digital converter and mixed-signal demodulator for low-power millimeter-wave communication systems.” 2011. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/47814.

MLA Handbook (7th Edition):

Chuang, Kevin. “Multi-gigabit CMOS analog-to-digital converter and mixed-signal demodulator for low-power millimeter-wave communication systems.” 2011. Web. 28 Mar 2020.

Vancouver:

Chuang K. Multi-gigabit CMOS analog-to-digital converter and mixed-signal demodulator for low-power millimeter-wave communication systems. [Internet] [Doctoral dissertation]. Georgia Tech; 2011. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/47814.

Council of Science Editors:

Chuang K. Multi-gigabit CMOS analog-to-digital converter and mixed-signal demodulator for low-power millimeter-wave communication systems. [Doctoral Dissertation]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/47814


Georgia Tech

9. Lochner, Zachary Meyer. Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition.

Degree: MS, Electrical and Computer Engineering, 2010, Georgia Tech

 This thesis describes the development of III-Nitride materials for light emitting applications. The goals of this research were to create and optimize a green light… (more)

Subjects/Keywords: MOCVD; GaN; Gallium nitride; LED; Laser diode; Light emitting diodes; Semiconductor lasers; Gallium nitride; Indium

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APA (6th Edition):

Lochner, Z. M. (2010). Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/33827

Chicago Manual of Style (16th Edition):

Lochner, Zachary Meyer. “Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition.” 2010. Masters Thesis, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/33827.

MLA Handbook (7th Edition):

Lochner, Zachary Meyer. “Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition.” 2010. Web. 28 Mar 2020.

Vancouver:

Lochner ZM. Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition. [Internet] [Masters thesis]. Georgia Tech; 2010. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/33827.

Council of Science Editors:

Lochner ZM. Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition. [Masters Thesis]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/33827


Georgia Tech

10. Lee, Kyoung-Keun. Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 This dissertation shows the properties of lithium niobate and lithium tantalate as a promising substrate for III-nitrides, addresses several problems of integrating compound semiconductor materials… (more)

Subjects/Keywords: MBE; LiNbO3; Optoelectronics; HEMT; GaN; Gallium nitride; Lithium niobate; Lithium tantalate; Optoelectronic devices; Epitaxy; Electrostatics

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APA (6th Edition):

Lee, K. (2009). Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/28209

Chicago Manual of Style (16th Edition):

Lee, Kyoung-Keun. “Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications.” 2009. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/28209.

MLA Handbook (7th Edition):

Lee, Kyoung-Keun. “Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications.” 2009. Web. 28 Mar 2020.

Vancouver:

Lee K. Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/28209.

Council of Science Editors:

Lee K. Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/28209


Georgia Tech

11. Wang, Guoan. RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends.

Degree: PhD, Electrical and Computer Engineering, 2006, Georgia Tech

 This dissertation deals with the development of RF MEMS switches with novel materials and micromachining techniques for the RF and microwave applications. To enable the… (more)

Subjects/Keywords: CMOS grade Silicon; Micromachining techniques; LCP; BST; Photodefinable; Novel dielectric materials; RF MEMS switch; SOC/SOP; Micromachining; Microwave devices; Dielectrics

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APA (6th Edition):

Wang, G. (2006). RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/14112

Chicago Manual of Style (16th Edition):

Wang, Guoan. “RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends.” 2006. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/14112.

MLA Handbook (7th Edition):

Wang, Guoan. “RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends.” 2006. Web. 28 Mar 2020.

Vancouver:

Wang G. RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends. [Internet] [Doctoral dissertation]. Georgia Tech; 2006. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/14112.

Council of Science Editors:

Wang G. RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends. [Doctoral Dissertation]. Georgia Tech; 2006. Available from: http://hdl.handle.net/1853/14112


Georgia Tech

12. Choi, Seong-O. An Electrically Active Microneedle Electroporation Array for Intracellular Delivery of Biomolecules.

Degree: PhD, Electrical and Computer Engineering, 2007, Georgia Tech

 The objective of this research is the development of an electrically active microneedle array that can deliver biomolecules such as DNA and drugs to epidermal… (more)

Subjects/Keywords: Inclined UV lithography; Electroporation; Microneedles; Metal transfer; Micromolding; Drug delivery devices; Transdermal medication; Skin absorption; Electroporation

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APA (6th Edition):

Choi, S. (2007). An Electrically Active Microneedle Electroporation Array for Intracellular Delivery of Biomolecules. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/19710

Chicago Manual of Style (16th Edition):

Choi, Seong-O. “An Electrically Active Microneedle Electroporation Array for Intracellular Delivery of Biomolecules.” 2007. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/19710.

MLA Handbook (7th Edition):

Choi, Seong-O. “An Electrically Active Microneedle Electroporation Array for Intracellular Delivery of Biomolecules.” 2007. Web. 28 Mar 2020.

Vancouver:

Choi S. An Electrically Active Microneedle Electroporation Array for Intracellular Delivery of Biomolecules. [Internet] [Doctoral dissertation]. Georgia Tech; 2007. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/19710.

Council of Science Editors:

Choi S. An Electrically Active Microneedle Electroporation Array for Intracellular Delivery of Biomolecules. [Doctoral Dissertation]. Georgia Tech; 2007. Available from: http://hdl.handle.net/1853/19710


Georgia Tech

13. Yoo, Dongwon. Growth and Characterization of III-Nitrides Materials System for Photonic and Electronic Devices by Metalorganic Chemical Vapor Deposition.

Degree: PhD, Materials Science and Engineering, 2007, Georgia Tech

 A wide variety of group III-Nitride-based photonic and electronic devices have opened a new era in the field of semiconductor research in the past ten… (more)

Subjects/Keywords: Avalanche photodiode; Epitaxial growth; MOCVD; Rectifier; Gallium nitride; Aluminum gallium nitride; Heterostructures; Epitaxy; Avalanche photodiodes

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APA (6th Edition):

Yoo, D. (2007). Growth and Characterization of III-Nitrides Materials System for Photonic and Electronic Devices by Metalorganic Chemical Vapor Deposition. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/16220

Chicago Manual of Style (16th Edition):

Yoo, Dongwon. “Growth and Characterization of III-Nitrides Materials System for Photonic and Electronic Devices by Metalorganic Chemical Vapor Deposition.” 2007. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/16220.

MLA Handbook (7th Edition):

Yoo, Dongwon. “Growth and Characterization of III-Nitrides Materials System for Photonic and Electronic Devices by Metalorganic Chemical Vapor Deposition.” 2007. Web. 28 Mar 2020.

Vancouver:

Yoo D. Growth and Characterization of III-Nitrides Materials System for Photonic and Electronic Devices by Metalorganic Chemical Vapor Deposition. [Internet] [Doctoral dissertation]. Georgia Tech; 2007. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/16220.

Council of Science Editors:

Yoo D. Growth and Characterization of III-Nitrides Materials System for Photonic and Electronic Devices by Metalorganic Chemical Vapor Deposition. [Doctoral Dissertation]. Georgia Tech; 2007. Available from: http://hdl.handle.net/1853/16220

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