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You searched for +publisher:"Georgia Tech" +contributor:("Shen, Shyh-Chiang"). Showing records 1 – 30 of 51 total matches.

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Georgia Tech

1. Omprakash, Anup. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.

Degree: MS, Electrical and Computer Engineering, 2016, Georgia Tech

 The objective of this work is to characterize and investigate the effect of extreme environments, such as high temperature (up to 300^∘C) and radiation, on… (more)

Subjects/Keywords: SiGe; SiGe HBTs; High temperature; Total dose effects; Reliability; Thermal instability

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APA (6th Edition):

Omprakash, A. (2016). Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58195

Chicago Manual of Style (16th Edition):

Omprakash, Anup. “Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.” 2016. Masters Thesis, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/58195.

MLA Handbook (7th Edition):

Omprakash, Anup. “Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.” 2016. Web. 24 Feb 2020.

Vancouver:

Omprakash A. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. [Internet] [Masters thesis]. Georgia Tech; 2016. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/58195.

Council of Science Editors:

Omprakash A. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. [Masters Thesis]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58195

2. Natarajan, Shweta. Thermal metrology techniques for ultraviolet light emitting diodes.

Degree: MS, Mechanical Engineering, 2012, Georgia Tech

 AlₓGa₁₋ₓN (x>0.6) based Ultraviolet Light Emitting Diodes (UV LEDs) emit in the UV C range of 200 - 290 nm and suffer from low external… (more)

Subjects/Keywords: Raman spectroscopy; Light emitting diodes; Thermal metrology; Forward voltage method; Infrared spectroscopy; Microelectromechanical systems

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APA (6th Edition):

Natarajan, S. (2012). Thermal metrology techniques for ultraviolet light emitting diodes. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/45891

Chicago Manual of Style (16th Edition):

Natarajan, Shweta. “Thermal metrology techniques for ultraviolet light emitting diodes.” 2012. Masters Thesis, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/45891.

MLA Handbook (7th Edition):

Natarajan, Shweta. “Thermal metrology techniques for ultraviolet light emitting diodes.” 2012. Web. 24 Feb 2020.

Vancouver:

Natarajan S. Thermal metrology techniques for ultraviolet light emitting diodes. [Internet] [Masters thesis]. Georgia Tech; 2012. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/45891.

Council of Science Editors:

Natarajan S. Thermal metrology techniques for ultraviolet light emitting diodes. [Masters Thesis]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/45891

3. Kumara Vadivel, Shruthi. Multi-beam interference: three-dimensional bicontinuous periodic structures.

Degree: MS, Electrical and Computer Engineering, 2017, Georgia Tech

 Bicontinuous microstructures are an important subset of three-dimensional periodic-lattice-based microstructures. Bicontinuity occurs when the constituent materials are interconnected in all three dimensions throughout the structure.… (more)

Subjects/Keywords: Multi-beam interference; Bicontinuous structures; Volumes; Surface areas

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APA (6th Edition):

Kumara Vadivel, S. (2017). Multi-beam interference: three-dimensional bicontinuous periodic structures. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58330

Chicago Manual of Style (16th Edition):

Kumara Vadivel, Shruthi. “Multi-beam interference: three-dimensional bicontinuous periodic structures.” 2017. Masters Thesis, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/58330.

MLA Handbook (7th Edition):

Kumara Vadivel, Shruthi. “Multi-beam interference: three-dimensional bicontinuous periodic structures.” 2017. Web. 24 Feb 2020.

Vancouver:

Kumara Vadivel S. Multi-beam interference: three-dimensional bicontinuous periodic structures. [Internet] [Masters thesis]. Georgia Tech; 2017. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/58330.

Council of Science Editors:

Kumara Vadivel S. Multi-beam interference: three-dimensional bicontinuous periodic structures. [Masters Thesis]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/58330


Georgia Tech

4. Sebkhi, Nordine. A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition.

Degree: MS, Electrical and Computer Engineering, 2011, Georgia Tech

 The objective of this thesis is to discuss the solutions investigated by AMDG (Advanced Materials and Devices Group) to reduce the "efficiency droop" effect that… (more)

Subjects/Keywords: Efficiency droop; GaN LED; MOCVD; Light emitting diodes

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APA (6th Edition):

Sebkhi, N. (2011). A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/42856

Chicago Manual of Style (16th Edition):

Sebkhi, Nordine. “A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition.” 2011. Masters Thesis, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/42856.

MLA Handbook (7th Edition):

Sebkhi, Nordine. “A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition.” 2011. Web. 24 Feb 2020.

Vancouver:

Sebkhi N. A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition. [Internet] [Masters thesis]. Georgia Tech; 2011. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/42856.

Council of Science Editors:

Sebkhi N. A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition. [Masters Thesis]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/42856


Georgia Tech

5. Kim, Samuel H. Addressing thermal and environmental reliability in GaN based high electron mobility transistors.

Degree: MS, Mechanical Engineering, 2014, Georgia Tech

 AlGaN/GaN high electron mobility transistors (HEMTs) have appeared as attractive candidates for high power, high frequency, and high temperature operation at microwave frequencies. In particular,… (more)

Subjects/Keywords: Reliability; GaN; HEMTs; HFETs; Temperature; Environmental reliability; Negative gate bias step stress test;

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APA (6th Edition):

Kim, S. H. (2014). Addressing thermal and environmental reliability in GaN based high electron mobility transistors. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52244

Chicago Manual of Style (16th Edition):

Kim, Samuel H. “Addressing thermal and environmental reliability in GaN based high electron mobility transistors.” 2014. Masters Thesis, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/52244.

MLA Handbook (7th Edition):

Kim, Samuel H. “Addressing thermal and environmental reliability in GaN based high electron mobility transistors.” 2014. Web. 24 Feb 2020.

Vancouver:

Kim SH. Addressing thermal and environmental reliability in GaN based high electron mobility transistors. [Internet] [Masters thesis]. Georgia Tech; 2014. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/52244.

Council of Science Editors:

Kim SH. Addressing thermal and environmental reliability in GaN based high electron mobility transistors. [Masters Thesis]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/52244


Georgia Tech

6. Raghunathan, Uppili Srinivasan. TCAD modeling of mixed-mode degradation in SiGe HBTs.

Degree: MS, Electrical and Computer Engineering, 2014, Georgia Tech

 The objective of this work is to develop an effective TCAD based hot-carrier degradation model in predicting the damage that a SiGe HBT undergoes as… (more)

Subjects/Keywords: SiGe HBT; Hot-carrier; Reliability modeling; Lucky electron model

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APA (6th Edition):

Raghunathan, U. S. (2014). TCAD modeling of mixed-mode degradation in SiGe HBTs. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54315

Chicago Manual of Style (16th Edition):

Raghunathan, Uppili Srinivasan. “TCAD modeling of mixed-mode degradation in SiGe HBTs.” 2014. Masters Thesis, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/54315.

MLA Handbook (7th Edition):

Raghunathan, Uppili Srinivasan. “TCAD modeling of mixed-mode degradation in SiGe HBTs.” 2014. Web. 24 Feb 2020.

Vancouver:

Raghunathan US. TCAD modeling of mixed-mode degradation in SiGe HBTs. [Internet] [Masters thesis]. Georgia Tech; 2014. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/54315.

Council of Science Editors:

Raghunathan US. TCAD modeling of mixed-mode degradation in SiGe HBTs. [Masters Thesis]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/54315


Georgia Tech

7. Fitzharris, Margaret. Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes.

Degree: MS, Electrical and Computer Engineering, 2016, Georgia Tech

 A physics-based model incorporating the UTC (uni-traveling carrier) photodiode (PD) in the limit of weak nonlinearity was used in order to characterize the effects of… (more)

Subjects/Keywords: Nonlinearity; Photodiode; IMD3; IP3

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APA (6th Edition):

Fitzharris, M. (2016). Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55069

Chicago Manual of Style (16th Edition):

Fitzharris, Margaret. “Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes.” 2016. Masters Thesis, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/55069.

MLA Handbook (7th Edition):

Fitzharris, Margaret. “Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes.” 2016. Web. 24 Feb 2020.

Vancouver:

Fitzharris M. Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes. [Internet] [Masters thesis]. Georgia Tech; 2016. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/55069.

Council of Science Editors:

Fitzharris M. Characterizing and minimizing nonlinearities responsible for intermodulation distortion in high speed and high power photodiodes. [Masters Thesis]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55069


Georgia Tech

8. Bonanno, Peter L. Nano-selective-area growth of group III-nitrides on silicon and conventional substrates.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 We developed and evaluated NSAG techniques for Group III-Nitrides as a way to mitigate the various difficulties with this material system (high defect density, threading… (more)

Subjects/Keywords: GaN; NSAG; InGaN; BGaN

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APA (6th Edition):

Bonanno, P. L. (2016). Nano-selective-area growth of group III-nitrides on silicon and conventional substrates. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55574

Chicago Manual of Style (16th Edition):

Bonanno, Peter L. “Nano-selective-area growth of group III-nitrides on silicon and conventional substrates.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/55574.

MLA Handbook (7th Edition):

Bonanno, Peter L. “Nano-selective-area growth of group III-nitrides on silicon and conventional substrates.” 2016. Web. 24 Feb 2020.

Vancouver:

Bonanno PL. Nano-selective-area growth of group III-nitrides on silicon and conventional substrates. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/55574.

Council of Science Editors:

Bonanno PL. Nano-selective-area growth of group III-nitrides on silicon and conventional substrates. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55574

9. Arora, Rajan. Trade-offs between performance and reliability of sub 100-nm RF-CMOS technologies.

Degree: PhD, Electrical and Computer Engineering, 2012, Georgia Tech

 The objective of this research is to develop an understanding of the trade-offs between performance and reliability in sub 100-nm silicon-on-insulator (SOI) CMOS technologies. Such… (more)

Subjects/Keywords: CMOS; RF; Analog; MOSFET; SOI; Sub-100 nm; Reliability; Hot-carrier; Metal oxide semiconductors, Complementary; Radio frequency integrated circuits; Silicon-on-insulator technology

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APA (6th Edition):

Arora, R. (2012). Trade-offs between performance and reliability of sub 100-nm RF-CMOS technologies. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/50140

Chicago Manual of Style (16th Edition):

Arora, Rajan. “Trade-offs between performance and reliability of sub 100-nm RF-CMOS technologies.” 2012. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/50140.

MLA Handbook (7th Edition):

Arora, Rajan. “Trade-offs between performance and reliability of sub 100-nm RF-CMOS technologies.” 2012. Web. 24 Feb 2020.

Vancouver:

Arora R. Trade-offs between performance and reliability of sub 100-nm RF-CMOS technologies. [Internet] [Doctoral dissertation]. Georgia Tech; 2012. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/50140.

Council of Science Editors:

Arora R. Trade-offs between performance and reliability of sub 100-nm RF-CMOS technologies. [Doctoral Dissertation]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/50140

10. Liu, Yuh-Shiuan. Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers.

Degree: PhD, Electrical and Computer Engineering, 2018, Georgia Tech

 This thesis describes the development of III – nitride materials for ultraviolet (UV) vertical-cavity surface-emitting lasers or VCSELs. The goal of this research is to develop… (more)

Subjects/Keywords: MOCVD; VCSEL; III-N

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APA (6th Edition):

Liu, Y. (2018). Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60284

Chicago Manual of Style (16th Edition):

Liu, Yuh-Shiuan. “Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers.” 2018. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/60284.

MLA Handbook (7th Edition):

Liu, Yuh-Shiuan. “Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers.” 2018. Web. 24 Feb 2020.

Vancouver:

Liu Y. Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers. [Internet] [Doctoral dissertation]. Georgia Tech; 2018. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/60284.

Council of Science Editors:

Liu Y. Metalorganic chemical vapor deposition growth development for ultraviolet vertical cavity surface emitting lasers. [Doctoral Dissertation]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/60284


Georgia Tech

11. Gunning, Brendan. Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 P-type doping of III-nitrides is explored in order to better understand the shortcomings of existing p-type material and achieve higher hole concentrations. Using a modified… (more)

Subjects/Keywords: III-nitride; Semiconductor; Molecular beam epitaxy; Gallium nitride

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APA (6th Edition):

Gunning, B. (2015). Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58142

Chicago Manual of Style (16th Edition):

Gunning, Brendan. “Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell.” 2015. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/58142.

MLA Handbook (7th Edition):

Gunning, Brendan. “Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell.” 2015. Web. 24 Feb 2020.

Vancouver:

Gunning B. Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/58142.

Council of Science Editors:

Gunning B. Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/58142


Georgia Tech

12. Kao, Tsung-Ting. Development and characterization of III-Nitride bipolar devices.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 III-nitride (III-N) materials have been widely used in optical devices such as blue light-emitting diodes today. On the other hand, III-N power electronics are also… (more)

Subjects/Keywords: III-N devices; Compound semiconductor

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APA (6th Edition):

Kao, T. (2016). Development and characterization of III-Nitride bipolar devices. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59114

Chicago Manual of Style (16th Edition):

Kao, Tsung-Ting. “Development and characterization of III-Nitride bipolar devices.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/59114.

MLA Handbook (7th Edition):

Kao, Tsung-Ting. “Development and characterization of III-Nitride bipolar devices.” 2016. Web. 24 Feb 2020.

Vancouver:

Kao T. Development and characterization of III-Nitride bipolar devices. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/59114.

Council of Science Editors:

Kao T. Development and characterization of III-Nitride bipolar devices. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/59114

13. Yeh, David Alexander. Multi-gigabit low-power wireless CMOS demodulator.

Degree: PhD, Electrical and Computer Engineering, 2010, Georgia Tech

 This dissertation presents system and circuit development of the low-power multi-gigabit CMOS demodulator using analog and mixed demodulation techniques. In addition, critical building blocks of… (more)

Subjects/Keywords: Millimeter-wave; UWB; CMOS; Wireless system; Wireless transceiver; Multi-gigabit demodulator; Metal oxide semiconductors, Complementary; Radio detectors; Wireless communication systems

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APA (6th Edition):

Yeh, D. A. (2010). Multi-gigabit low-power wireless CMOS demodulator. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/41168

Chicago Manual of Style (16th Edition):

Yeh, David Alexander. “Multi-gigabit low-power wireless CMOS demodulator.” 2010. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/41168.

MLA Handbook (7th Edition):

Yeh, David Alexander. “Multi-gigabit low-power wireless CMOS demodulator.” 2010. Web. 24 Feb 2020.

Vancouver:

Yeh DA. Multi-gigabit low-power wireless CMOS demodulator. [Internet] [Doctoral dissertation]. Georgia Tech; 2010. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/41168.

Council of Science Editors:

Yeh DA. Multi-gigabit low-power wireless CMOS demodulator. [Doctoral Dissertation]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/41168

14. Zhang, Yun. Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors.

Degree: PhD, Electrical and Computer Engineering, 2011, Georgia Tech

 This dissertation describes the development of III-nitride (III-N) bipolar devices for optoelectronic and electronic applications. Research mainly involves device design, fabrication process development, and device… (more)

Subjects/Keywords: Fabrication; GaN; Avalanche photodiode; Gallium nitride; Laser diode; Heterojunction bipolar transistors; Bipolar transistors; Heterojunctions; Avalanche photodiodes; Gallium nitride; Epitaxial growth

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APA (6th Edition):

Zhang, Y. (2011). Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/42703

Chicago Manual of Style (16th Edition):

Zhang, Yun. “Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors.” 2011. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/42703.

MLA Handbook (7th Edition):

Zhang, Yun. “Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors.” 2011. Web. 24 Feb 2020.

Vancouver:

Zhang Y. Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors. [Internet] [Doctoral dissertation]. Georgia Tech; 2011. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/42703.

Council of Science Editors:

Zhang Y. Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors. [Doctoral Dissertation]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/42703

15. Najafizadeh, Laleh. Design of analog circuits for extreme environment applications.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 This work investigates the challenges associated with designing silicon-germanium (SiGe) analog and mixed-signal circuits capable of operating reliably in extreme environment conditions. Three extreme environment… (more)

Subjects/Keywords: Analog circuits; SiGe; Extreme environment; Bandgap voltage references; Heterojunction bipolar transistor; Silicon germanium; Low temperature operation; Single-event; Radiation effects; Cryoelectronics; Materials Effect of radiation on; Silicon alloys

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APA (6th Edition):

Najafizadeh, L. (2009). Design of analog circuits for extreme environment applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/31796

Chicago Manual of Style (16th Edition):

Najafizadeh, Laleh. “Design of analog circuits for extreme environment applications.” 2009. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/31796.

MLA Handbook (7th Edition):

Najafizadeh, Laleh. “Design of analog circuits for extreme environment applications.” 2009. Web. 24 Feb 2020.

Vancouver:

Najafizadeh L. Design of analog circuits for extreme environment applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/31796.

Council of Science Editors:

Najafizadeh L. Design of analog circuits for extreme environment applications. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/31796

16. Lee, Yi-Che. Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 The fabrication processes development for on III-nitride (III-N) heterojunction bipolar transistors (HBTs), heterojunction field-effect transistors (HFETs) and metal-insulator-semiconductor field-effect transistors (MISFETs) were performed. D.c, microwave… (more)

Subjects/Keywords: III-nitride; Heterojunction; Bipolar transistor; Field-effect transistor; Fabrication process

…insulator-semiconductor field-effect transistors (MISFETs) developed at Georgia Tech for… …HBTs and MISFETs at Georgia Tech. The results not only indicated the great potential of III-N… …performance at Georgia Tech for III-N HBTs, HFETs and MISFETs will be discussed. 5 1.3 GaN/InGaN… …during fabrication processes [47]. At Georgia Tech, the research work was focused on… 

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APA (6th Edition):

Lee, Y. (2014). Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53472

Chicago Manual of Style (16th Edition):

Lee, Yi-Che. “Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors.” 2014. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/53472.

MLA Handbook (7th Edition):

Lee, Yi-Che. “Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors.” 2014. Web. 24 Feb 2020.

Vancouver:

Lee Y. Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/53472.

Council of Science Editors:

Lee Y. Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/53472

17. Choi, Suk. Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition.

Degree: PhD, Electrical and Computer Engineering, 2012, Georgia Tech

 Efficiency droop is a critical issue for the Group III-nitride based light-emitting diodes (LEDs) to be competitive in the general lighting application. Carrier spill-over have… (more)

Subjects/Keywords: Epitaxial growth; Mocvd; InAlN; Nitride; Led; Thin film; Heterostructures; Epitaxy; Light emitting diodes; Optoelectronic devices; Liquid phase epitaxy; Molecular beam epitaxy; Nitrides

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APA (6th Edition):

Choi, S. (2012). Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/45823

Chicago Manual of Style (16th Edition):

Choi, Suk. “Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition.” 2012. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/45823.

MLA Handbook (7th Edition):

Choi, Suk. “Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition.” 2012. Web. 24 Feb 2020.

Vancouver:

Choi S. Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition. [Internet] [Doctoral dissertation]. Georgia Tech; 2012. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/45823.

Council of Science Editors:

Choi S. Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition. [Doctoral Dissertation]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/45823

18. Poh, Chung Hang. SiGe HBT BiCMOS RF front-ends for radar systems.

Degree: PhD, Electrical and Computer Engineering, 2011, Georgia Tech

 The objective of this research is to explore the possibilities of developing transmit/receive (T/R) modules using silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology to… (more)

Subjects/Keywords: RF Front-ends; T/R modules; SiGe HBT BiCMOS; LCP; Radar; RF Packaging; Radar Materials; Metal oxide semiconductors, Complementary; Polymer liquid crystals; Liquid crystals; Bipolar transistors; Transistors

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APA (6th Edition):

Poh, C. H. (2011). SiGe HBT BiCMOS RF front-ends for radar systems. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/45874

Chicago Manual of Style (16th Edition):

Poh, Chung Hang. “SiGe HBT BiCMOS RF front-ends for radar systems.” 2011. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/45874.

MLA Handbook (7th Edition):

Poh, Chung Hang. “SiGe HBT BiCMOS RF front-ends for radar systems.” 2011. Web. 24 Feb 2020.

Vancouver:

Poh CH. SiGe HBT BiCMOS RF front-ends for radar systems. [Internet] [Doctoral dissertation]. Georgia Tech; 2011. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/45874.

Council of Science Editors:

Poh CH. SiGe HBT BiCMOS RF front-ends for radar systems. [Doctoral Dissertation]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/45874

19. Sridharan, Sriraaman. Design and theoretical study of Wurtzite GaN HEMTs and APDs via electrothermal Monte Carlo simulation.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 A self-consistent, full-band, electrothermal ensemble Monte Carlo device simulation tool has been developed. It is used to study charge transport in bulk GaN, and to… (more)

Subjects/Keywords: Semiconductor devices; Monte Carlo method; Charge transfer devices (Electronics); Modulation-doped field-effect transistors; Avalanche photodiodes

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APA (6th Edition):

Sridharan, S. (2013). Design and theoretical study of Wurtzite GaN HEMTs and APDs via electrothermal Monte Carlo simulation. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/47526

Chicago Manual of Style (16th Edition):

Sridharan, Sriraaman. “Design and theoretical study of Wurtzite GaN HEMTs and APDs via electrothermal Monte Carlo simulation.” 2013. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/47526.

MLA Handbook (7th Edition):

Sridharan, Sriraaman. “Design and theoretical study of Wurtzite GaN HEMTs and APDs via electrothermal Monte Carlo simulation.” 2013. Web. 24 Feb 2020.

Vancouver:

Sridharan S. Design and theoretical study of Wurtzite GaN HEMTs and APDs via electrothermal Monte Carlo simulation. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/47526.

Council of Science Editors:

Sridharan S. Design and theoretical study of Wurtzite GaN HEMTs and APDs via electrothermal Monte Carlo simulation. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/47526

20. Kim, Jeomoh. Growth and characterization of III-nitride semiconductors for high-efficient light-emitting diodes by metalorganic chemical vapor deposition.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 The engineering of carrier dynamics in the MQW active region by modifying the p-type layers in the III-nitride based visible LEDs is described in this… (more)

Subjects/Keywords: Growth and characterization of semiconductors; MOCVD; III-N based visible LEDs

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APA (6th Edition):

Kim, J. (2014). Growth and characterization of III-nitride semiconductors for high-efficient light-emitting diodes by metalorganic chemical vapor deposition. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52206

Chicago Manual of Style (16th Edition):

Kim, Jeomoh. “Growth and characterization of III-nitride semiconductors for high-efficient light-emitting diodes by metalorganic chemical vapor deposition.” 2014. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/52206.

MLA Handbook (7th Edition):

Kim, Jeomoh. “Growth and characterization of III-nitride semiconductors for high-efficient light-emitting diodes by metalorganic chemical vapor deposition.” 2014. Web. 24 Feb 2020.

Vancouver:

Kim J. Growth and characterization of III-nitride semiconductors for high-efficient light-emitting diodes by metalorganic chemical vapor deposition. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/52206.

Council of Science Editors:

Kim J. Growth and characterization of III-nitride semiconductors for high-efficient light-emitting diodes by metalorganic chemical vapor deposition. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/52206

21. Inanlou, Farzad Michael-David. Innovative transceiver approaches for low-power near-field and far-field applications.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 Wireless operation, near-field or far-field, is a core functionality of any mobile or autonomous system. These systems are battery operated or most often utilize energy… (more)

Subjects/Keywords: Wireless; Transceiver; Radar; Low-power; Wide-band; Millimeter-wave; System on chip; Remote sensing; Phased-array; Implantable Medical Devices; Near-field; Communications; Space-based transceivers; SiGe; BiCMOS; CMOS; Integrated circuits; RF; Radiation effects; Total ionizing dose; High-altitude; Transcutaneous telemetry; Data telemetry; low-voltage; Low noise Amplifier; X-band; K-band; Ku-band; W-band; Impulse radio; Ultra wideband; Inductive link

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APA (6th Edition):

Inanlou, F. M. (2014). Innovative transceiver approaches for low-power near-field and far-field applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52245

Chicago Manual of Style (16th Edition):

Inanlou, Farzad Michael-David. “Innovative transceiver approaches for low-power near-field and far-field applications.” 2014. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/52245.

MLA Handbook (7th Edition):

Inanlou, Farzad Michael-David. “Innovative transceiver approaches for low-power near-field and far-field applications.” 2014. Web. 24 Feb 2020.

Vancouver:

Inanlou FM. Innovative transceiver approaches for low-power near-field and far-field applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/52245.

Council of Science Editors:

Inanlou FM. Innovative transceiver approaches for low-power near-field and far-field applications. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/52245

22. Satter, Md. Mahbub. Design and theoretical study of Wurtzite III-N deep ultraviolet edge emitting laser diodes.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 Designs for deep ultraviolet (DUV) edge emitting laser diodes (LDs) based on the wurtzite III-nitride (III-N) material system are presented. A combination of proprietary and… (more)

Subjects/Keywords: AlInN active layer; AlGaN active layer; AlGaN epitaxial layer; AlN substrate; Quantum-confined Stark effect; Tapered electron blocking layer; Lateral current injection; Quaternary barrier; Regrown Ohmic contacts; Deep ultraviolet laser diodes; Efficient hole transport; Hole blocking layer; Inverse tapering; Optical absorption loss; Polarization charge

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APA (6th Edition):

Satter, M. M. (2014). Design and theoretical study of Wurtzite III-N deep ultraviolet edge emitting laser diodes. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53042

Chicago Manual of Style (16th Edition):

Satter, Md Mahbub. “Design and theoretical study of Wurtzite III-N deep ultraviolet edge emitting laser diodes.” 2014. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/53042.

MLA Handbook (7th Edition):

Satter, Md Mahbub. “Design and theoretical study of Wurtzite III-N deep ultraviolet edge emitting laser diodes.” 2014. Web. 24 Feb 2020.

Vancouver:

Satter MM. Design and theoretical study of Wurtzite III-N deep ultraviolet edge emitting laser diodes. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/53042.

Council of Science Editors:

Satter MM. Design and theoretical study of Wurtzite III-N deep ultraviolet edge emitting laser diodes. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/53042

23. Trybus, Elaissa Lee. Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 The objective of the proposed research is to establish the technology for material growth by molecular beam epitaxy (MBE) and fabrication of indium gallium nitride/gallium… (more)

Subjects/Keywords: InGaN; Mg doping; III-Nitrides; Photovoltaics; Molecular beam epitaxy; Molecular beam epitaxy; Indium compounds; Photovoltaic power generation; Solar cells

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APA (6th Edition):

Trybus, E. L. (2009). Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/28108

Chicago Manual of Style (16th Edition):

Trybus, Elaissa Lee. “Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications.” 2009. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/28108.

MLA Handbook (7th Edition):

Trybus, Elaissa Lee. “Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications.” 2009. Web. 24 Feb 2020.

Vancouver:

Trybus EL. Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/28108.

Council of Science Editors:

Trybus EL. Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/28108

24. Lochner, Zachary M. Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 The material and device characteristics of InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition are examined. Two structures grown on sapphire with… (more)

Subjects/Keywords: Metalorganic chemical vapor deposition; Heterojunction bipolar transistor; III-nitrides; Gallium nitride; Ultraviolet laser diode; Chemical vapor deposition; Vapor-plating; Epitaxy; Semiconductors

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APA (6th Edition):

Lochner, Z. M. (2013). Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/49032

Chicago Manual of Style (16th Edition):

Lochner, Zachary M. “Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition.” 2013. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/49032.

MLA Handbook (7th Edition):

Lochner, Zachary M. “Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition.” 2013. Web. 24 Feb 2020.

Vancouver:

Lochner ZM. Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/49032.

Council of Science Editors:

Lochner ZM. Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/49032

25. Moseley, Michael William. Study of III-nitride growth kinetics by molecular-beam epitaxy.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 Since the initial breakthroughs in structural quality and p-type conductivity in GaN during the late 1980s, the group-III nitride material system has attracted an enormous… (more)

Subjects/Keywords: RHEED; Aluminum nitride; Indium nitride; Gallium nitride; Nitrides; MBE; Molecular-beam epitaxy; Nitrides; Thin films; Molecular beam epitaxy

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APA (6th Edition):

Moseley, M. W. (2013). Study of III-nitride growth kinetics by molecular-beam epitaxy. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/47641

Chicago Manual of Style (16th Edition):

Moseley, Michael William. “Study of III-nitride growth kinetics by molecular-beam epitaxy.” 2013. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/47641.

MLA Handbook (7th Edition):

Moseley, Michael William. “Study of III-nitride growth kinetics by molecular-beam epitaxy.” 2013. Web. 24 Feb 2020.

Vancouver:

Moseley MW. Study of III-nitride growth kinetics by molecular-beam epitaxy. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/47641.

Council of Science Editors:

Moseley MW. Study of III-nitride growth kinetics by molecular-beam epitaxy. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/47641

26. Yoon, Seungil. Cross-layer dynamic spectrum management framework for the coexistence of white space applications.

Degree: PhD, Electrical and Computer Engineering, 2011, Georgia Tech

 The objective of this dissertation is to propose the cross-layer spectrum management architecture for white space applications that improves the performance the main functions of… (more)

Subjects/Keywords: Spectrum management; White space applications; Cross-layer; Spectrum analysis; Broadband communication systems; Television frequency allocation; Radio frequency allocation; Cell phone systems; Wireless Internet

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APA (6th Edition):

Yoon, S. (2011). Cross-layer dynamic spectrum management framework for the coexistence of white space applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/44787

Chicago Manual of Style (16th Edition):

Yoon, Seungil. “Cross-layer dynamic spectrum management framework for the coexistence of white space applications.” 2011. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/44787.

MLA Handbook (7th Edition):

Yoon, Seungil. “Cross-layer dynamic spectrum management framework for the coexistence of white space applications.” 2011. Web. 24 Feb 2020.

Vancouver:

Yoon S. Cross-layer dynamic spectrum management framework for the coexistence of white space applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2011. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/44787.

Council of Science Editors:

Yoon S. Cross-layer dynamic spectrum management framework for the coexistence of white space applications. [Doctoral Dissertation]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/44787

27. Kim, Stephen T. Energy-optimized design techniques for wireless communication and ubiquitous sensing nodes.

Degree: PhD, Electrical and Computer Engineering, 2011, Georgia Tech

 The objective of the proposed research is to analyze and develop energy optimized design techniques that can improve the operating efficiency for a wireless sensor… (more)

Subjects/Keywords: CMOS; IC; Wireless sensor; Wireless sensor nodes; Metal oxide semiconductors, Complementary

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APA (6th Edition):

Kim, S. T. (2011). Energy-optimized design techniques for wireless communication and ubiquitous sensing nodes. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/43737

Chicago Manual of Style (16th Edition):

Kim, Stephen T. “Energy-optimized design techniques for wireless communication and ubiquitous sensing nodes.” 2011. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/43737.

MLA Handbook (7th Edition):

Kim, Stephen T. “Energy-optimized design techniques for wireless communication and ubiquitous sensing nodes.” 2011. Web. 24 Feb 2020.

Vancouver:

Kim ST. Energy-optimized design techniques for wireless communication and ubiquitous sensing nodes. [Internet] [Doctoral dissertation]. Georgia Tech; 2011. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/43737.

Council of Science Editors:

Kim ST. Energy-optimized design techniques for wireless communication and ubiquitous sensing nodes. [Doctoral Dissertation]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/43737

28. Moen, Kurt Andrew. Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology.

Degree: PhD, Electrical and Computer Engineering, 2012, Georgia Tech

 The advent of high-frequency silicon-based technologies has enabled the design of mixed-signal circuits that incorporate analog, RF, and digital circuit components to build cost-effective system-on-a-chip… (more)

Subjects/Keywords: Reliability; SiGe HBT; Radiation effects; Semiconductor devices; Metal oxide semiconductors, Complementary; Silicon; Mixed signal circuits

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APA (6th Edition):

Moen, K. A. (2012). Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/44700

Chicago Manual of Style (16th Edition):

Moen, Kurt Andrew. “Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology.” 2012. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/44700.

MLA Handbook (7th Edition):

Moen, Kurt Andrew. “Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology.” 2012. Web. 24 Feb 2020.

Vancouver:

Moen KA. Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology. [Internet] [Doctoral dissertation]. Georgia Tech; 2012. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/44700.

Council of Science Editors:

Moen KA. Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology. [Doctoral Dissertation]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/44700

29. Seth, Sachin. Using complementary silicon-germanium transistors for design of high-performance rf front-ends.

Degree: PhD, Electrical and Computer Engineering, 2012, Georgia Tech

 The objective of the research presented in this dissertation is to explore the achievable dynamic range limits in high-performance RF front-ends designed using SiGe HBTs,… (more)

Subjects/Keywords: Distortion; RF circuit design; SiGe HBT; Transistors; Radio Transmitter-receivers; Radio frequency integrated circuits; Bipolar transistors; Silicon alloys; Germanium

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APA (6th Edition):

Seth, S. (2012). Using complementary silicon-germanium transistors for design of high-performance rf front-ends. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/44721

Chicago Manual of Style (16th Edition):

Seth, Sachin. “Using complementary silicon-germanium transistors for design of high-performance rf front-ends.” 2012. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/44721.

MLA Handbook (7th Edition):

Seth, Sachin. “Using complementary silicon-germanium transistors for design of high-performance rf front-ends.” 2012. Web. 24 Feb 2020.

Vancouver:

Seth S. Using complementary silicon-germanium transistors for design of high-performance rf front-ends. [Internet] [Doctoral dissertation]. Georgia Tech; 2012. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/44721.

Council of Science Editors:

Seth S. Using complementary silicon-germanium transistors for design of high-performance rf front-ends. [Doctoral Dissertation]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/44721

30. Zhang, Xiaohong. Device engineering of organic field-effect transistors toward complementary circuits.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 Organic complementary circuits are attracting significant attention due to their high power efficiency and operation robustness, driven by the demands for low-cost, large-area and flexible… (more)

Subjects/Keywords: Organic field-effect transistors; Complementary circuits; Organic field-effect transistors; Organic semiconductors

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APA (6th Edition):

Zhang, X. (2009). Device engineering of organic field-effect transistors toward complementary circuits. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/28150

Chicago Manual of Style (16th Edition):

Zhang, Xiaohong. “Device engineering of organic field-effect transistors toward complementary circuits.” 2009. Doctoral Dissertation, Georgia Tech. Accessed February 24, 2020. http://hdl.handle.net/1853/28150.

MLA Handbook (7th Edition):

Zhang, Xiaohong. “Device engineering of organic field-effect transistors toward complementary circuits.” 2009. Web. 24 Feb 2020.

Vancouver:

Zhang X. Device engineering of organic field-effect transistors toward complementary circuits. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/1853/28150.

Council of Science Editors:

Zhang X. Device engineering of organic field-effect transistors toward complementary circuits. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/28150

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