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You searched for +publisher:"Georgia Tech" +contributor:("Ougazzaden, Abdallah"). Showing records 1 – 15 of 15 total matches.

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Georgia Tech

1. Bonanno, Peter L. Nano-selective-area growth of group III-nitrides on silicon and conventional substrates.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 We developed and evaluated NSAG techniques for Group III-Nitrides as a way to mitigate the various difficulties with this material system (high defect density, threading… (more)

Subjects/Keywords: GaN; NSAG; InGaN; BGaN

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APA (6th Edition):

Bonanno, P. L. (2016). Nano-selective-area growth of group III-nitrides on silicon and conventional substrates. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55574

Chicago Manual of Style (16th Edition):

Bonanno, Peter L. “Nano-selective-area growth of group III-nitrides on silicon and conventional substrates.” 2016. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/55574.

MLA Handbook (7th Edition):

Bonanno, Peter L. “Nano-selective-area growth of group III-nitrides on silicon and conventional substrates.” 2016. Web. 18 Mar 2019.

Vancouver:

Bonanno PL. Nano-selective-area growth of group III-nitrides on silicon and conventional substrates. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/55574.

Council of Science Editors:

Bonanno PL. Nano-selective-area growth of group III-nitrides on silicon and conventional substrates. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55574

2. Hässig Fonseca, Santiago. Applications and optimization of response surface methodologies in high-pressure, high-temperature gauges.

Degree: MS, Electrical and Computer Engineering, 2012, Georgia Tech

 High-Pressure, High-Temperature (HPHT) pressure gauges are commonly used in oil wells for pressure transient analysis. Mathematical models are used to relate input perturbation (e.g., flow… (more)

Subjects/Keywords: Multivariate regression; Performance forecasting; Signal alignment; Time-domain indexing; Misaligned signals; Data mining; Response surfaces (Statistics); Oil wells Testing; Gages

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APA (6th Edition):

Hässig Fonseca, S. (2012). Applications and optimization of response surface methodologies in high-pressure, high-temperature gauges. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/44902

Chicago Manual of Style (16th Edition):

Hässig Fonseca, Santiago. “Applications and optimization of response surface methodologies in high-pressure, high-temperature gauges.” 2012. Masters Thesis, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/44902.

MLA Handbook (7th Edition):

Hässig Fonseca, Santiago. “Applications and optimization of response surface methodologies in high-pressure, high-temperature gauges.” 2012. Web. 18 Mar 2019.

Vancouver:

Hässig Fonseca S. Applications and optimization of response surface methodologies in high-pressure, high-temperature gauges. [Internet] [Masters thesis]. Georgia Tech; 2012. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/44902.

Council of Science Editors:

Hässig Fonseca S. Applications and optimization of response surface methodologies in high-pressure, high-temperature gauges. [Masters Thesis]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/44902


Georgia Tech

3. Swafford, Robert D. Development of a new generation of electric current sensors through advances in manufacturing techniques and material design.

Degree: PhD, Mechanical Engineering, 2013, Georgia Tech

 Electrical systems have become ubiquitous, and with them come the need to accurately monitor electric current. The aerospace industry is no exception. Modern aircraft may… (more)

Subjects/Keywords: Electric current sensor; MEMS; Faraday effect; Electric currents; Detectors; Microelectromechanical systems

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APA (6th Edition):

Swafford, R. D. (2013). Development of a new generation of electric current sensors through advances in manufacturing techniques and material design. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/50306

Chicago Manual of Style (16th Edition):

Swafford, Robert D. “Development of a new generation of electric current sensors through advances in manufacturing techniques and material design.” 2013. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/50306.

MLA Handbook (7th Edition):

Swafford, Robert D. “Development of a new generation of electric current sensors through advances in manufacturing techniques and material design.” 2013. Web. 18 Mar 2019.

Vancouver:

Swafford RD. Development of a new generation of electric current sensors through advances in manufacturing techniques and material design. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/50306.

Council of Science Editors:

Swafford RD. Development of a new generation of electric current sensors through advances in manufacturing techniques and material design. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/50306


Georgia Tech

4. Herbison, Sarah. Ultrasonic diffraction effects on periodic surfaces.

Degree: PhD, Mechanical Engineering, 2011, Georgia Tech

 Although the study of the interaction of acoustic and elastic waves with periodic surfaces and structures has a rich history dating back to Lord Rayleigh,… (more)

Subjects/Keywords: Phononic crystals; Backward beam displacement; Bragg scattering; Rayleigh-Fourier; NDE; Nondestructive evaluation; Photonics Materials; Crystal optics; Diffraction; Ultrasonic waves; Ultrasonic testing; Diffraction patterns

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APA (6th Edition):

Herbison, S. (2011). Ultrasonic diffraction effects on periodic surfaces. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/41180

Chicago Manual of Style (16th Edition):

Herbison, Sarah. “Ultrasonic diffraction effects on periodic surfaces.” 2011. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/41180.

MLA Handbook (7th Edition):

Herbison, Sarah. “Ultrasonic diffraction effects on periodic surfaces.” 2011. Web. 18 Mar 2019.

Vancouver:

Herbison S. Ultrasonic diffraction effects on periodic surfaces. [Internet] [Doctoral dissertation]. Georgia Tech; 2011. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/41180.

Council of Science Editors:

Herbison S. Ultrasonic diffraction effects on periodic surfaces. [Doctoral Dissertation]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/41180


Georgia Tech

5. Li, Xin. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The context of this thesis falls in the wide applications of UV light sources such as sterilization and purification. On the material aspect, III-nitrides (BAlGaInN)… (more)

Subjects/Keywords: VCSEL; Distributed Bragg reflector; Deep UV; MOVPE; III nitrides

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APA (6th Edition):

Li, X. (2016). BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55561

Chicago Manual of Style (16th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/55561.

MLA Handbook (7th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Web. 18 Mar 2019.

Vancouver:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/55561.

Council of Science Editors:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55561


Georgia Tech

6. Jordan, Matthew Braxton. Growth optimization and process development of indium gallium nitride/gallium nitride solar cells.

Degree: PhD, Electrical and Computer Engineering, 2017, Georgia Tech

 Indium gallium nitride solar cells have shown promise but the overall performance is limited by several factors. First it is difficult to grow thick, high… (more)

Subjects/Keywords: InGaN; Solar cell; Photovoltaic

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APA (6th Edition):

Jordan, M. B. (2017). Growth optimization and process development of indium gallium nitride/gallium nitride solar cells. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59798

Chicago Manual of Style (16th Edition):

Jordan, Matthew Braxton. “Growth optimization and process development of indium gallium nitride/gallium nitride solar cells.” 2017. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/59798.

MLA Handbook (7th Edition):

Jordan, Matthew Braxton. “Growth optimization and process development of indium gallium nitride/gallium nitride solar cells.” 2017. Web. 18 Mar 2019.

Vancouver:

Jordan MB. Growth optimization and process development of indium gallium nitride/gallium nitride solar cells. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/59798.

Council of Science Editors:

Jordan MB. Growth optimization and process development of indium gallium nitride/gallium nitride solar cells. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/59798


Georgia Tech

7. Gigliotti, James. Integrated dielectrics for protection and gating of epitaxial graphene devices.

Degree: PhD, Materials Science and Engineering, 2017, Georgia Tech

 Epitaxial graphene is an exceptional platform for high performance carbon nanoelectronics and fundamental transport studies. Compared to exfoliated and CVD graphene, epitaxial graphene exhibits robust… (more)

Subjects/Keywords: Epitaxial graphene

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APA (6th Edition):

Gigliotti, J. (2017). Integrated dielectrics for protection and gating of epitaxial graphene devices. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60700

Chicago Manual of Style (16th Edition):

Gigliotti, James. “Integrated dielectrics for protection and gating of epitaxial graphene devices.” 2017. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/60700.

MLA Handbook (7th Edition):

Gigliotti, James. “Integrated dielectrics for protection and gating of epitaxial graphene devices.” 2017. Web. 18 Mar 2019.

Vancouver:

Gigliotti J. Integrated dielectrics for protection and gating of epitaxial graphene devices. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/60700.

Council of Science Editors:

Gigliotti J. Integrated dielectrics for protection and gating of epitaxial graphene devices. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/60700

8. Zhang, Zheshen. New techniques for quantum communication systems.

Degree: PhD, Electrical and Computer Engineering, 2011, Georgia Tech

 Although mathematical cryptography has been widely used, its security has only been proven under certain assumptions such as the computational power of opponents. As an… (more)

Subjects/Keywords: Nonlinear optics; Quantum information; Quantum communication; Optical communications; Quantum optics; Quantum electronics; Quantum computers

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APA (6th Edition):

Zhang, Z. (2011). New techniques for quantum communication systems. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/42843

Chicago Manual of Style (16th Edition):

Zhang, Zheshen. “New techniques for quantum communication systems.” 2011. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/42843.

MLA Handbook (7th Edition):

Zhang, Zheshen. “New techniques for quantum communication systems.” 2011. Web. 18 Mar 2019.

Vancouver:

Zhang Z. New techniques for quantum communication systems. [Internet] [Doctoral dissertation]. Georgia Tech; 2011. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/42843.

Council of Science Editors:

Zhang Z. New techniques for quantum communication systems. [Doctoral Dissertation]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/42843

9. Ye, Wei. Nano-epitaxy modeling and design: from atomistic simulations to continuum methods.

Degree: PhD, Mechanical Engineering, 2013, Georgia Tech

 The dissertation starts from the understanding of dislocation dissipation mechanism due to the image force acting on the dislocation. This work implements a screw dislocation… (more)

Subjects/Keywords: Dislocation; Surface stress; Finite element; Molecular dynamics; GaN; Nanorod; Epitaxy; Nanocrystals; Nanostructured materials; Semiconductors Defects; Dislocations in crystals

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APA (6th Edition):

Ye, W. (2013). Nano-epitaxy modeling and design: from atomistic simulations to continuum methods. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/50304

Chicago Manual of Style (16th Edition):

Ye, Wei. “Nano-epitaxy modeling and design: from atomistic simulations to continuum methods.” 2013. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/50304.

MLA Handbook (7th Edition):

Ye, Wei. “Nano-epitaxy modeling and design: from atomistic simulations to continuum methods.” 2013. Web. 18 Mar 2019.

Vancouver:

Ye W. Nano-epitaxy modeling and design: from atomistic simulations to continuum methods. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/50304.

Council of Science Editors:

Ye W. Nano-epitaxy modeling and design: from atomistic simulations to continuum methods. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/50304

10. Sadiq, Muhammad. Design and fabrication of lanthanum-doped Sn-Ag-Cu lead-free solder for next generation microelectronics applications in severe environment.

Degree: PhD, Mechanical Engineering, 2012, Georgia Tech

 Sn-Pb solder has long been used in the Electronics industry. But, due to its toxic nature and environmental effects, certain restrictions are made on its… (more)

Subjects/Keywords: Microelectronics; InterMetallic compounds (IMCs); Microstructure evolution; Thermal coarsening (Aging); Creep behaviour; Characterization; Electronic packaging; Wettability; Nanoindentation; Nanotechnology; Rare-earth elements (Lanthanum); Lead-free solder; Lanthanum; Lead-free electronics manufacturing processes; Solder and soldering; Microstructure

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APA (6th Edition):

Sadiq, M. (2012). Design and fabrication of lanthanum-doped Sn-Ag-Cu lead-free solder for next generation microelectronics applications in severe environment. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/44762

Chicago Manual of Style (16th Edition):

Sadiq, Muhammad. “Design and fabrication of lanthanum-doped Sn-Ag-Cu lead-free solder for next generation microelectronics applications in severe environment.” 2012. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/44762.

MLA Handbook (7th Edition):

Sadiq, Muhammad. “Design and fabrication of lanthanum-doped Sn-Ag-Cu lead-free solder for next generation microelectronics applications in severe environment.” 2012. Web. 18 Mar 2019.

Vancouver:

Sadiq M. Design and fabrication of lanthanum-doped Sn-Ag-Cu lead-free solder for next generation microelectronics applications in severe environment. [Internet] [Doctoral dissertation]. Georgia Tech; 2012. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/44762.

Council of Science Editors:

Sadiq M. Design and fabrication of lanthanum-doped Sn-Ag-Cu lead-free solder for next generation microelectronics applications in severe environment. [Doctoral Dissertation]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/44762


Georgia Tech

11. Bishop, Christopher. Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 Microsensor technologies based on nitride semiconductor materials were developed as options for improved exhaust gas sensors in diesel exhaust systems. The main goals were to… (more)

Subjects/Keywords: Sensors; Semiconductors; GaN; BGaN; AlGaN; HEMT; Exhaust sensors

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APA (6th Edition):

Bishop, C. (2015). Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54898

Chicago Manual of Style (16th Edition):

Bishop, Christopher. “Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants.” 2015. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/54898.

MLA Handbook (7th Edition):

Bishop, Christopher. “Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants.” 2015. Web. 18 Mar 2019.

Vancouver:

Bishop C. Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/54898.

Council of Science Editors:

Bishop C. Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/54898


Georgia Tech

12. Dickerson, Jeramy Ray. Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 Innovative electronic device concepts that use polarization charges to provide improved performance were validated. The strength of the electric fields created by polarization charges (PCs)… (more)

Subjects/Keywords: III-N; Polarization; GaN; InGaN; Solar cells; HEMT; Resonant tunneling; Tunneling; Multi-junction solar cells; Quantum wells; Semiconductors; Photovoltaic cells; Tunneling (Physics)

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APA (6th Edition):

Dickerson, J. R. (2014). Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/51793

Chicago Manual of Style (16th Edition):

Dickerson, Jeramy Ray. “Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices.” 2014. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/51793.

MLA Handbook (7th Edition):

Dickerson, Jeramy Ray. “Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices.” 2014. Web. 18 Mar 2019.

Vancouver:

Dickerson JR. Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/51793.

Council of Science Editors:

Dickerson JR. Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/51793


Georgia Tech

13. Puybaret, Renaud. Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 Silicon carbide and III-nitrides have been intensively used in the industry for the production of high-frequency electronics, power electronics, and optoelectronics, both separately and grown… (more)

Subjects/Keywords: Epitaxial graphene; Silicon carbide; Indium gallium nitride; Nano selective area growth; Silicon nitride; Electronics; Optoelectronics; Nanotechnology

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APA (6th Edition):

Puybaret, R. (2015). Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55541

Chicago Manual of Style (16th Edition):

Puybaret, Renaud. “Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics.” 2015. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/55541.

MLA Handbook (7th Edition):

Puybaret, Renaud. “Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics.” 2015. Web. 18 Mar 2019.

Vancouver:

Puybaret R. Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/55541.

Council of Science Editors:

Puybaret R. Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/55541


Georgia Tech

14. Munson, Charles E. A stacked betavoltaic battery using a lateral-growth-smoothed BGaN intrinsic region.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 An investigation into possible ways to increase the efficiency of betavoltaic battery technology by using a novel material, BGaN, by utilizing the stacking of PIN… (more)

Subjects/Keywords: Betavoltaic; Batteries; Computer modeling; III-V semiconductors; Ni-63

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APA (6th Edition):

Munson, C. E. (2016). A stacked betavoltaic battery using a lateral-growth-smoothed BGaN intrinsic region. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59145

Chicago Manual of Style (16th Edition):

Munson, Charles E. “A stacked betavoltaic battery using a lateral-growth-smoothed BGaN intrinsic region.” 2016. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/59145.

MLA Handbook (7th Edition):

Munson, Charles E. “A stacked betavoltaic battery using a lateral-growth-smoothed BGaN intrinsic region.” 2016. Web. 18 Mar 2019.

Vancouver:

Munson CE. A stacked betavoltaic battery using a lateral-growth-smoothed BGaN intrinsic region. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/59145.

Council of Science Editors:

Munson CE. A stacked betavoltaic battery using a lateral-growth-smoothed BGaN intrinsic region. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/59145

15. Pantzas, Konstantinos. Growth and characterization of high-quality, thick InGaN epilayers for high-efficiency, low-cost solar cells.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 In the global context of increasing oil prices and public concern regarding the safety of nuclear plants, renewable forms of energy are called upon to… (more)

Subjects/Keywords: InGaN; solar cells; MOCVE; HAADF-STEM

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APA (6th Edition):

Pantzas, K. (2015). Growth and characterization of high-quality, thick InGaN epilayers for high-efficiency, low-cost solar cells. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54380

Chicago Manual of Style (16th Edition):

Pantzas, Konstantinos. “Growth and characterization of high-quality, thick InGaN epilayers for high-efficiency, low-cost solar cells.” 2015. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/54380.

MLA Handbook (7th Edition):

Pantzas, Konstantinos. “Growth and characterization of high-quality, thick InGaN epilayers for high-efficiency, low-cost solar cells.” 2015. Web. 18 Mar 2019.

Vancouver:

Pantzas K. Growth and characterization of high-quality, thick InGaN epilayers for high-efficiency, low-cost solar cells. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/54380.

Council of Science Editors:

Pantzas K. Growth and characterization of high-quality, thick InGaN epilayers for high-efficiency, low-cost solar cells. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/54380

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