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You searched for +publisher:"Georgia Tech" +contributor:("Cressler, John"). Showing records 1 – 30 of 115 total matches.

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Georgia Tech

1. Omprakash, Anup. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.

Degree: MS, Electrical and Computer Engineering, 2016, Georgia Tech

 The objective of this work is to characterize and investigate the effect of extreme environments, such as high temperature (up to 300^∘C) and radiation, on… (more)

Subjects/Keywords: SiGe; SiGe HBTs; High temperature; Total dose effects; Reliability; Thermal instability

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APA (6th Edition):

Omprakash, A. (2016). Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58195

Chicago Manual of Style (16th Edition):

Omprakash, Anup. “Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.” 2016. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/58195.

MLA Handbook (7th Edition):

Omprakash, Anup. “Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.” 2016. Web. 22 Apr 2019.

Vancouver:

Omprakash A. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. [Internet] [Masters thesis]. Georgia Tech; 2016. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/58195.

Council of Science Editors:

Omprakash A. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. [Masters Thesis]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58195


Georgia Tech

2. Phillips, Stanley D. Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies.

Degree: MS, Electrical and Computer Engineering, 2009, Georgia Tech

 Extreme environment applications impose stringent demands on technology platforms that are incorporated in electronic systems. Space is a classic extreme environment, encompassing both large temperature… (more)

Subjects/Keywords: Single event upet; RHBD; Single event effects; SiGe HBTs; Silicon-germanium; Metal oxide semiconductors, Complementary Effect of radiation on; Bipolar transistors Effect of radiation on

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APA (6th Edition):

Phillips, S. D. (2009). Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/29640

Chicago Manual of Style (16th Edition):

Phillips, Stanley D. “Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies.” 2009. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/29640.

MLA Handbook (7th Edition):

Phillips, Stanley D. “Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies.” 2009. Web. 22 Apr 2019.

Vancouver:

Phillips SD. Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies. [Internet] [Masters thesis]. Georgia Tech; 2009. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/29640.

Council of Science Editors:

Phillips SD. Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies. [Masters Thesis]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/29640


Georgia Tech

3. Hershberger, Kyle M. In-situ S-Parameter Analysis and Applications.

Degree: MS, Electrical and Computer Engineering, 2014, Georgia Tech

 This thesis will begin with an investigation on the limitations associated with the predominate two-port stability analysis techniques with respect to multi-stage RF amplifier design.… (more)

Subjects/Keywords: S-parameters; In-situ; Stability; RF; Network analysis; Communication Network analysis; Radio frequency; Amplifiers, Radio frequency

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APA (6th Edition):

Hershberger, K. M. (2014). In-situ S-Parameter Analysis and Applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/51839

Chicago Manual of Style (16th Edition):

Hershberger, Kyle M. “In-situ S-Parameter Analysis and Applications.” 2014. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/51839.

MLA Handbook (7th Edition):

Hershberger, Kyle M. “In-situ S-Parameter Analysis and Applications.” 2014. Web. 22 Apr 2019.

Vancouver:

Hershberger KM. In-situ S-Parameter Analysis and Applications. [Internet] [Masters thesis]. Georgia Tech; 2014. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/51839.

Council of Science Editors:

Hershberger KM. In-situ S-Parameter Analysis and Applications. [Masters Thesis]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/51839


Georgia Tech

4. Raghunathan, Uppili Srinivasan. TCAD modeling of mixed-mode degradation in SiGe HBTs.

Degree: MS, Electrical and Computer Engineering, 2014, Georgia Tech

 The objective of this work is to develop an effective TCAD based hot-carrier degradation model in predicting the damage that a SiGe HBT undergoes as… (more)

Subjects/Keywords: SiGe HBT; Hot-carrier; Reliability modeling; Lucky electron model

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APA (6th Edition):

Raghunathan, U. S. (2014). TCAD modeling of mixed-mode degradation in SiGe HBTs. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54315

Chicago Manual of Style (16th Edition):

Raghunathan, Uppili Srinivasan. “TCAD modeling of mixed-mode degradation in SiGe HBTs.” 2014. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/54315.

MLA Handbook (7th Edition):

Raghunathan, Uppili Srinivasan. “TCAD modeling of mixed-mode degradation in SiGe HBTs.” 2014. Web. 22 Apr 2019.

Vancouver:

Raghunathan US. TCAD modeling of mixed-mode degradation in SiGe HBTs. [Internet] [Masters thesis]. Georgia Tech; 2014. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/54315.

Council of Science Editors:

Raghunathan US. TCAD modeling of mixed-mode degradation in SiGe HBTs. [Masters Thesis]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/54315


Georgia Tech

5. Poh, Chung Hang. Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology.

Degree: MS, Electrical and Computer Engineering, 2009, Georgia Tech

 The objective of this thesis is to design RF circuits using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) for communication system. The packaging effect for the… (more)

Subjects/Keywords: Packaging; RF; LNA; LCP; SiGe; Bipolar transistors; Heterojunctions; Polymer liquid crystals; Radio frequency integrated circuits

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APA (6th Edition):

Poh, C. H. (2009). Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/31662

Chicago Manual of Style (16th Edition):

Poh, Chung Hang. “Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology.” 2009. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/31662.

MLA Handbook (7th Edition):

Poh, Chung Hang. “Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology.” 2009. Web. 22 Apr 2019.

Vancouver:

Poh CH. Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology. [Internet] [Masters thesis]. Georgia Tech; 2009. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/31662.

Council of Science Editors:

Poh CH. Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology. [Masters Thesis]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/31662


Georgia Tech

6. Yepes, Ana María. Multilayer antenna arrays for environmental sensing applications.

Degree: MS, Electrical and Computer Engineering, 2010, Georgia Tech

 Array antennas are used extensively in remote sensing applications, where a highly directive beam is needed to scan a particular area of interest on the… (more)

Subjects/Keywords: Environmental sensing; MLO; SOP; Microstrip antenna array; X-band; Ka-band; Antenna arrays; Remote sensing; Antennas (Electronics)

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APA (6th Edition):

Yepes, A. M. (2010). Multilayer antenna arrays for environmental sensing applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/34711

Chicago Manual of Style (16th Edition):

Yepes, Ana María. “Multilayer antenna arrays for environmental sensing applications.” 2010. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/34711.

MLA Handbook (7th Edition):

Yepes, Ana María. “Multilayer antenna arrays for environmental sensing applications.” 2010. Web. 22 Apr 2019.

Vancouver:

Yepes AM. Multilayer antenna arrays for environmental sensing applications. [Internet] [Masters thesis]. Georgia Tech; 2010. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/34711.

Council of Science Editors:

Yepes AM. Multilayer antenna arrays for environmental sensing applications. [Masters Thesis]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/34711


Georgia Tech

7. Diestelhorst, Ryan M. Silicon-germanium BiCMOS device and circuit design for extreme environment applications.

Degree: MS, Electrical and Computer Engineering, 2009, Georgia Tech

 Silicon-germanium (SiGe) BiCMOS technology platforms have proven invaluable for implementing a wide variety of digital, RF, and mixed-signal applications in extreme environments such as space,… (more)

Subjects/Keywords: RHBD; Single event effects; Bipolar transistors; Metal oxide semiconductors, Complementary; Silicon alloys Effect of temperature on; Germanium Effect of temperature on; Germanium Effect of radiation on; Silicon alloys Effect of radiation on

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APA (6th Edition):

Diestelhorst, R. M. (2009). Silicon-germanium BiCMOS device and circuit design for extreme environment applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/28180

Chicago Manual of Style (16th Edition):

Diestelhorst, Ryan M. “Silicon-germanium BiCMOS device and circuit design for extreme environment applications.” 2009. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/28180.

MLA Handbook (7th Edition):

Diestelhorst, Ryan M. “Silicon-germanium BiCMOS device and circuit design for extreme environment applications.” 2009. Web. 22 Apr 2019.

Vancouver:

Diestelhorst RM. Silicon-germanium BiCMOS device and circuit design for extreme environment applications. [Internet] [Masters thesis]. Georgia Tech; 2009. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/28180.

Council of Science Editors:

Diestelhorst RM. Silicon-germanium BiCMOS device and circuit design for extreme environment applications. [Masters Thesis]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/28180


Georgia Tech

8. Seth, Sachin. Understanding distortion in silicon-germanium transistors, and its application to RF circuits.

Degree: MS, Electrical and Computer Engineering, 2009, Georgia Tech

 In an increasingly crowded frequency spectrum with strong interfering signals, the distortion performance, or the linearity, of RF circuits is key to their ability to… (more)

Subjects/Keywords: Volterra Series; RF circuit; Non-linearity; Distortion; Silicon-germanium; Mathematical analysis; Electric distortion; Transistors; Radio frequency

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APA (6th Edition):

Seth, S. (2009). Understanding distortion in silicon-germanium transistors, and its application to RF circuits. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/31729

Chicago Manual of Style (16th Edition):

Seth, Sachin. “Understanding distortion in silicon-germanium transistors, and its application to RF circuits.” 2009. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/31729.

MLA Handbook (7th Edition):

Seth, Sachin. “Understanding distortion in silicon-germanium transistors, and its application to RF circuits.” 2009. Web. 22 Apr 2019.

Vancouver:

Seth S. Understanding distortion in silicon-germanium transistors, and its application to RF circuits. [Internet] [Masters thesis]. Georgia Tech; 2009. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/31729.

Council of Science Editors:

Seth S. Understanding distortion in silicon-germanium transistors, and its application to RF circuits. [Masters Thesis]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/31729


Georgia Tech

9. Thomas, Dylan Buxton. Silicon-germanium devices and circuits for high temperature applications.

Degree: MS, Electrical and Computer Engineering, 2010, Georgia Tech

 Using bandgap engineering, silicon-germanium (SiGe) BiCMOS technology effectively combines III-V transistor performance with the cost and integration advantages associated with CMOS manufacturing. The suitability of… (more)

Subjects/Keywords: Operational amplifier; Opamp; Temperature sensor; BGR; Bandgap reference; Output buffer; High temperature; BiCMOS; SiGe HBTs; Silicon-germanium; Output buffer; Bipolar transistors; Metal oxide semiconductors, Complementary; Silicon alloys Effect of temperature on; Germanium alloys Effect of temperature on

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APA (6th Edition):

Thomas, D. B. (2010). Silicon-germanium devices and circuits for high temperature applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/33949

Chicago Manual of Style (16th Edition):

Thomas, Dylan Buxton. “Silicon-germanium devices and circuits for high temperature applications.” 2010. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/33949.

MLA Handbook (7th Edition):

Thomas, Dylan Buxton. “Silicon-germanium devices and circuits for high temperature applications.” 2010. Web. 22 Apr 2019.

Vancouver:

Thomas DB. Silicon-germanium devices and circuits for high temperature applications. [Internet] [Masters thesis]. Georgia Tech; 2010. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/33949.

Council of Science Editors:

Thomas DB. Silicon-germanium devices and circuits for high temperature applications. [Masters Thesis]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/33949


Georgia Tech

10. Shankar, Subramaniam. Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors.

Degree: MS, Electrical and Computer Engineering, 2010, Georgia Tech

 This thesis explores the critical advantages of using silicon-germanium (SiGe) HBTs for RF front-end design. The first chapter looks at the SiGe BiCMOS technology platform… (more)

Subjects/Keywords: Circuit design; Sige; Ultra-wide tunable; Silicon-germanium; Heterojunctions; Biopolar transistors; Germanium compounds; Silicon compounds; Wireless communication systems

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APA (6th Edition):

Shankar, S. (2010). Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/34807

Chicago Manual of Style (16th Edition):

Shankar, Subramaniam. “Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors.” 2010. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/34807.

MLA Handbook (7th Edition):

Shankar, Subramaniam. “Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors.” 2010. Web. 22 Apr 2019.

Vancouver:

Shankar S. Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors. [Internet] [Masters thesis]. Georgia Tech; 2010. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/34807.

Council of Science Editors:

Shankar S. Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors. [Masters Thesis]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/34807


Georgia Tech

11. Vadivelu, Praveen Babu. Design of components for mmWave phased array in deep submicron CMOS technology.

Degree: MS, Electrical and Computer Engineering, 2009, Georgia Tech

 With the advancement in wireless communication, there has been a lot of overlap in the frequency spectrum used by different applications in the lower frequency… (more)

Subjects/Keywords: CMOS; Phase shifters; LNA; VCO; Phased array; Wireless communication systems; Electronic apparatus and appliances

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APA (6th Edition):

Vadivelu, P. B. (2009). Design of components for mmWave phased array in deep submicron CMOS technology. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/37182

Chicago Manual of Style (16th Edition):

Vadivelu, Praveen Babu. “Design of components for mmWave phased array in deep submicron CMOS technology.” 2009. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/37182.

MLA Handbook (7th Edition):

Vadivelu, Praveen Babu. “Design of components for mmWave phased array in deep submicron CMOS technology.” 2009. Web. 22 Apr 2019.

Vancouver:

Vadivelu PB. Design of components for mmWave phased array in deep submicron CMOS technology. [Internet] [Masters thesis]. Georgia Tech; 2009. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/37182.

Council of Science Editors:

Vadivelu PB. Design of components for mmWave phased array in deep submicron CMOS technology. [Masters Thesis]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/37182


Georgia Tech

12. England, Troy Daniel. SiGe BiCMOS circuit and system design and characterization for extreme environment applications.

Degree: MS, Electrical and Computer Engineering, 2011, Georgia Tech

 This thesis describes the architecture, verification, qualification, and packaging of a 16-channel silicon-germanium (SiGe) Remote Electronics Unit (REU) designed for use in extreme environment applications… (more)

Subjects/Keywords: Mixed-signal system; Radiation hardened; Cold-capable; System-in-package; Silicon-germanium; Systems on a chip; Embedded computer systems; Extreme environments; Space environment

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APA (6th Edition):

England, T. D. (2011). SiGe BiCMOS circuit and system design and characterization for extreme environment applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/41216

Chicago Manual of Style (16th Edition):

England, Troy Daniel. “SiGe BiCMOS circuit and system design and characterization for extreme environment applications.” 2011. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/41216.

MLA Handbook (7th Edition):

England, Troy Daniel. “SiGe BiCMOS circuit and system design and characterization for extreme environment applications.” 2011. Web. 22 Apr 2019.

Vancouver:

England TD. SiGe BiCMOS circuit and system design and characterization for extreme environment applications. [Internet] [Masters thesis]. Georgia Tech; 2011. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/41216.

Council of Science Editors:

England TD. SiGe BiCMOS circuit and system design and characterization for extreme environment applications. [Masters Thesis]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/41216


Georgia Tech

13. Mills, Richard P., III. Design and optimization of RF test structures for mm-wave circuit design.

Degree: MS, Electrical and Computer Engineering, 2011, Georgia Tech

This work discusses a methodology developed for robust RF test structure design for SiGe HBTs operating at mm-wave frequencies. Advisors/Committee Members: Cressler, John (Committee Chair), Davis, Jeff (Committee Member), Papapolymerou, John (Committee Member).

Subjects/Keywords: Mm-wave; RF; Test structures; Semiconductors; Metal oxide semiconductors, Complementary; Silicon; Radio frequency integrated circuits

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APA (6th Edition):

Mills, Richard P., I. (2011). Design and optimization of RF test structures for mm-wave circuit design. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/42922

Chicago Manual of Style (16th Edition):

Mills, Richard P., III. “Design and optimization of RF test structures for mm-wave circuit design.” 2011. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/42922.

MLA Handbook (7th Edition):

Mills, Richard P., III. “Design and optimization of RF test structures for mm-wave circuit design.” 2011. Web. 22 Apr 2019.

Vancouver:

Mills, Richard P. I. Design and optimization of RF test structures for mm-wave circuit design. [Internet] [Masters thesis]. Georgia Tech; 2011. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/42922.

Council of Science Editors:

Mills, Richard P. I. Design and optimization of RF test structures for mm-wave circuit design. [Masters Thesis]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/42922


Georgia Tech

14. Wier, Brian R. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.

Degree: MS, Electrical and Computer Engineering, 2015, Georgia Tech

 This thesis describes the characterization and modeling of various hot carrier degradation mechanisms in silicon-germanium heterojunction bipolar transistors. An analysis of measured stress data and… (more)

Subjects/Keywords: Hot carrier; Reliability; SiGe HBT

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APA (6th Edition):

Wier, B. R. (2015). Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60401

Chicago Manual of Style (16th Edition):

Wier, Brian R. “Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.” 2015. Masters Thesis, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/60401.

MLA Handbook (7th Edition):

Wier, Brian R. “Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.” 2015. Web. 22 Apr 2019.

Vancouver:

Wier BR. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. [Internet] [Masters thesis]. Georgia Tech; 2015. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/60401.

Council of Science Editors:

Wier BR. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. [Masters Thesis]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/60401


Georgia Tech

15. Pavlidis, Spyridon. Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 Wide band gap (WBG) semiconductors offer a number of unique properties not achievable by traditional silicon, such as optical transparency in the visible wavelength regime,… (more)

Subjects/Keywords: Chemical sensor; Thin film transistor; Metal oxide semiconductors; Wide band gap semiconductors; High frequency; Radio frequency; Packaging; Power amplifier; Receiver; System on package

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APA (6th Edition):

Pavlidis, S. (2016). Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58606

Chicago Manual of Style (16th Edition):

Pavlidis, Spyridon. “Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits.” 2016. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/58606.

MLA Handbook (7th Edition):

Pavlidis, Spyridon. “Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits.” 2016. Web. 22 Apr 2019.

Vancouver:

Pavlidis S. Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/58606.

Council of Science Editors:

Pavlidis S. Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58606


Georgia Tech

16. Oakley, Michael Alan. Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 This work focuses on the electrothermal impact of large voltage swings on silicon-germanium heterojunction bipolar transistors used in radio frequency amplifiers. Measurement data and simulation… (more)

Subjects/Keywords: Silicon-germanium; Heterojunction bipolar transistor; Radio frequency; Reliability; Power amplifier; Low-noise amplifier; Large-signal; Technology computer-aided design; Thermal simulation; Electrothermal interaction; Breakdown; Design guidelines; High-resistivity substrate; Measurement techniques; Mutual thermal coupling; Mutual heating

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APA (6th Edition):

Oakley, M. A. (2016). Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58609

Chicago Manual of Style (16th Edition):

Oakley, Michael Alan. “Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers.” 2016. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/58609.

MLA Handbook (7th Edition):

Oakley, Michael Alan. “Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers.” 2016. Web. 22 Apr 2019.

Vancouver:

Oakley MA. Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/58609.

Council of Science Editors:

Oakley MA. Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58609


Georgia Tech

17. Chakraborty, Partha Sarathi. Design, scaling and reliability of devices for high-performance mixed-signal applications.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 This research investigates and gains new understanding on how silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) device design couples with both performance scaling and reliability for… (more)

Subjects/Keywords: Silicon-germanium; Heterojunction bipolar transistor; TCAD; Scaling; Reliability; Device design; Mixed-signal; Simulation; High-frequency; Cryogenic temperature; Characterization

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APA (6th Edition):

Chakraborty, P. S. (2015). Design, scaling and reliability of devices for high-performance mixed-signal applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58137

Chicago Manual of Style (16th Edition):

Chakraborty, Partha Sarathi. “Design, scaling and reliability of devices for high-performance mixed-signal applications.” 2015. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/58137.

MLA Handbook (7th Edition):

Chakraborty, Partha Sarathi. “Design, scaling and reliability of devices for high-performance mixed-signal applications.” 2015. Web. 22 Apr 2019.

Vancouver:

Chakraborty PS. Design, scaling and reliability of devices for high-performance mixed-signal applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/58137.

Council of Science Editors:

Chakraborty PS. Design, scaling and reliability of devices for high-performance mixed-signal applications. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/58137


Georgia Tech

18. Cai, Fan. Development of 3-D RF microsystems using additive manufactruing technology.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 This work intends to explore advanced 3-D integration for state-of-the-art components in wireless systems using various 3-D printing technologies. Several packaging techniques are discussed that… (more)

Subjects/Keywords: 3-D printing; Additive manufacturing technology; Microsystems; MM-wave; RF

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APA (6th Edition):

Cai, F. (2016). Development of 3-D RF microsystems using additive manufactruing technology. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58161

Chicago Manual of Style (16th Edition):

Cai, Fan. “Development of 3-D RF microsystems using additive manufactruing technology.” 2016. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/58161.

MLA Handbook (7th Edition):

Cai, Fan. “Development of 3-D RF microsystems using additive manufactruing technology.” 2016. Web. 22 Apr 2019.

Vancouver:

Cai F. Development of 3-D RF microsystems using additive manufactruing technology. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/58161.

Council of Science Editors:

Cai F. Development of 3-D RF microsystems using additive manufactruing technology. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58161


Georgia Tech

19. Lourenco, Nelson Estacio. Mitigation of transient radiation effects in advanced silicon-germanium technologies.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The need for flexible, low-cost electronics in extreme environment applications has brought silicon-germanium (SiGe) technologies into the spotlight, but the viable long-term capability of these… (more)

Subjects/Keywords: SiGe; Radiation; Hardening; Silicon-germanium; Single-event effects

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APA (6th Edition):

Lourenco, N. E. (2016). Mitigation of transient radiation effects in advanced silicon-germanium technologies. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58187

Chicago Manual of Style (16th Edition):

Lourenco, Nelson Estacio. “Mitigation of transient radiation effects in advanced silicon-germanium technologies.” 2016. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/58187.

MLA Handbook (7th Edition):

Lourenco, Nelson Estacio. “Mitigation of transient radiation effects in advanced silicon-germanium technologies.” 2016. Web. 22 Apr 2019.

Vancouver:

Lourenco NE. Mitigation of transient radiation effects in advanced silicon-germanium technologies. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/58187.

Council of Science Editors:

Lourenco NE. Mitigation of transient radiation effects in advanced silicon-germanium technologies. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58187


Georgia Tech

20. Howard, Duane Clarence. Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 The design of reconfigurable microwave and millimeter-wave circuit components and on-chip testing circuitry are demonstrated. These components are designed to enable the mitigation of process… (more)

Subjects/Keywords: Microwave systems; RF systems; Tunable circuits; Automated testing; Built-in-self testing; Self-healing; Integrated circuits; Microwave integrated circuits; Electronic circuits; Microwave circuits

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APA (6th Edition):

Howard, D. C. (2014). Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/51823

Chicago Manual of Style (16th Edition):

Howard, Duane Clarence. “Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology.” 2014. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/51823.

MLA Handbook (7th Edition):

Howard, Duane Clarence. “Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology.” 2014. Web. 22 Apr 2019.

Vancouver:

Howard DC. Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/51823.

Council of Science Editors:

Howard DC. Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/51823


Georgia Tech

21. Saha, Prabir K. SiGe BiCMOS RF front-ends for adaptive wideband receivers.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 The pursuit of dense monolithic integration and higher operating speed continues to push the integrated circuit (IC) fabrication technologies to their limits. The increasing process… (more)

Subjects/Keywords: Self-healing; Adaptive; Mixer; Image-rejection; RF; LNA; SPDT

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APA (6th Edition):

Saha, P. K. (2013). SiGe BiCMOS RF front-ends for adaptive wideband receivers. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52184

Chicago Manual of Style (16th Edition):

Saha, Prabir K. “SiGe BiCMOS RF front-ends for adaptive wideband receivers.” 2013. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/52184.

MLA Handbook (7th Edition):

Saha, Prabir K. “SiGe BiCMOS RF front-ends for adaptive wideband receivers.” 2013. Web. 22 Apr 2019.

Vancouver:

Saha PK. SiGe BiCMOS RF front-ends for adaptive wideband receivers. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/52184.

Council of Science Editors:

Saha PK. SiGe BiCMOS RF front-ends for adaptive wideband receivers. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/52184


Georgia Tech

22. Donmezer, Fatma. Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors.

Degree: PhD, Mechanical Engineering, 2013, Georgia Tech

 Understanding the magnitude of the temperature in AlGaN/GaN heterostructure fi eld e ffect transistors(HFETs) is a critical aspect of understanding their reliability and providing proper… (more)

Subjects/Keywords: AlGaN/GaN HFETs; Hotspot; Phonon transport; Electrothermal modeling

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APA (6th Edition):

Donmezer, F. (2013). Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53139

Chicago Manual of Style (16th Edition):

Donmezer, Fatma. “Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors.” 2013. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/53139.

MLA Handbook (7th Edition):

Donmezer, Fatma. “Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors.” 2013. Web. 22 Apr 2019.

Vancouver:

Donmezer F. Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/53139.

Council of Science Editors:

Donmezer F. Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/53139


Georgia Tech

23. Kwon, Dongwon. Piezoelectric Kinetic Energy-harvesting ICs.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 Wireless micro-sensors can enjoy popularity in biomedical drug-delivery treatments and tire-pressure monitoring systems because they offer in-situ, real-time, non-intrusive processing capabilities. However, miniaturized platforms severely… (more)

Subjects/Keywords: Piezoelectric harvester; Switching converter; Energy harvesting

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APA (6th Edition):

Kwon, D. (2013). Piezoelectric Kinetic Energy-harvesting ICs. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53641

Chicago Manual of Style (16th Edition):

Kwon, Dongwon. “Piezoelectric Kinetic Energy-harvesting ICs.” 2013. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/53641.

MLA Handbook (7th Edition):

Kwon, Dongwon. “Piezoelectric Kinetic Energy-harvesting ICs.” 2013. Web. 22 Apr 2019.

Vancouver:

Kwon D. Piezoelectric Kinetic Energy-harvesting ICs. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/53641.

Council of Science Editors:

Kwon D. Piezoelectric Kinetic Energy-harvesting ICs. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/53641


Georgia Tech

24. Banerjee, Debashis. Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 In the thesis the design of process tolerant, use-aware radio-frequency front-ends were explored. First, the design of fuzzy logic and equation based controllers, which can… (more)

Subjects/Keywords: Radio frequency; Adaptation; Low noise amplifier; LNA; Front-end; Fuzzy logic; Learning; Energy-per-bit; Mixer; Clustering; Process Variation; Channel

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APA (6th Edition):

Banerjee, D. (2015). Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53882

Chicago Manual of Style (16th Edition):

Banerjee, Debashis. “Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications.” 2015. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/53882.

MLA Handbook (7th Edition):

Banerjee, Debashis. “Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications.” 2015. Web. 22 Apr 2019.

Vancouver:

Banerjee D. Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/53882.

Council of Science Editors:

Banerjee D. Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/53882


Georgia Tech

25. Bellini, Marco. Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with… (more)

Subjects/Keywords: SiGe; Extreme environments; HBT-on-SOI; Heterojunction bipolar transistor; Silicon germanium; TCAD; Heterojunctions; Bipolar transistors; Silicon compounds; Germanium; Extreme environments; Silicon-on-insulator technology

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APA (6th Edition):

Bellini, M. (2009). Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/28206

Chicago Manual of Style (16th Edition):

Bellini, Marco. “Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments.” 2009. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/28206.

MLA Handbook (7th Edition):

Bellini, Marco. “Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments.” 2009. Web. 22 Apr 2019.

Vancouver:

Bellini M. Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/28206.

Council of Science Editors:

Bellini M. Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/28206


Georgia Tech

26. Grens, Curtis Morrow. Operating voltage constraints and dynamic range in advanced silicon-germanium HBTs for high-frequency transceivers.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 This work investigates the fundamental device limits related to operational voltage constraints and linearity in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in order to… (more)

Subjects/Keywords: Pinch-in; Reliability; Safe-Operating Area (SOA); Silicon germanium; Dynamic range; Heterojunction Bipolar Transistors (HBTs); Intermodulation distortion; Linearity; Breakdown voltage; Avalanche multiplication; Bipolar transistors; Heterojunctions; Bipolar transistors; Radio Transmitter-receivers; Silicon compounds; Germanium compounds

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APA (6th Edition):

Grens, C. M. (2009). Operating voltage constraints and dynamic range in advanced silicon-germanium HBTs for high-frequency transceivers. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/29622

Chicago Manual of Style (16th Edition):

Grens, Curtis Morrow. “Operating voltage constraints and dynamic range in advanced silicon-germanium HBTs for high-frequency transceivers.” 2009. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/29622.

MLA Handbook (7th Edition):

Grens, Curtis Morrow. “Operating voltage constraints and dynamic range in advanced silicon-germanium HBTs for high-frequency transceivers.” 2009. Web. 22 Apr 2019.

Vancouver:

Grens CM. Operating voltage constraints and dynamic range in advanced silicon-germanium HBTs for high-frequency transceivers. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/29622.

Council of Science Editors:

Grens CM. Operating voltage constraints and dynamic range in advanced silicon-germanium HBTs for high-frequency transceivers. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/29622


Georgia Tech

27. An, Kyu Hwan. CMOS RF power amplifiers for mobile wireless communications.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 The explosive growth of the wireless market has increased the demand for low-cost, highly-integrated CMOS wireless transceivers. However, the implementation of CMOS RF power amplifiers… (more)

Subjects/Keywords: Power combining; Wireless; CMOS; Power amplifier; Transformer; Power back-off; Power amplifiers; Wireless communication systems; Mobile communication systems

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APA (6th Edition):

An, K. H. (2009). CMOS RF power amplifiers for mobile wireless communications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/31717

Chicago Manual of Style (16th Edition):

An, Kyu Hwan. “CMOS RF power amplifiers for mobile wireless communications.” 2009. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/31717.

MLA Handbook (7th Edition):

An, Kyu Hwan. “CMOS RF power amplifiers for mobile wireless communications.” 2009. Web. 22 Apr 2019.

Vancouver:

An KH. CMOS RF power amplifiers for mobile wireless communications. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/31717.

Council of Science Editors:

An KH. CMOS RF power amplifiers for mobile wireless communications. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/31717


Georgia Tech

28. Appaswamy, Aravind. Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 The objective of this work is to investigate the performance of SiGe HBTs and scaled CMOS devices in extreme environments. In this work, the inverse… (more)

Subjects/Keywords: Cryogenics; HBT; Bipolar transistors; Radiation; Heterojunctions; Bipolar transistors; Metal oxide semiconductors, Complementary; Extreme environments

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APA (6th Edition):

Appaswamy, A. (2009). Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/33970

Chicago Manual of Style (16th Edition):

Appaswamy, Aravind. “Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments.” 2009. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/33970.

MLA Handbook (7th Edition):

Appaswamy, Aravind. “Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments.” 2009. Web. 22 Apr 2019.

Vancouver:

Appaswamy A. Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/33970.

Council of Science Editors:

Appaswamy A. Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/33970


Georgia Tech

29. Cheng, Peng. Reliability of SiGe HBTs for extreme environment and RF applications.

Degree: PhD, Electrical and Computer Engineering, 2010, Georgia Tech

 The objective of the proposed research is to characterize the safe-operating-area of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments.… (more)

Subjects/Keywords: Extreme environment; SiGe HBTs; RF; Power amplifier; Bipolar transistors; Heterojunctions; Semiconductors; Silicones; Germanium; Transistors

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APA (6th Edition):

Cheng, P. (2010). Reliability of SiGe HBTs for extreme environment and RF applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/42836

Chicago Manual of Style (16th Edition):

Cheng, Peng. “Reliability of SiGe HBTs for extreme environment and RF applications.” 2010. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/42836.

MLA Handbook (7th Edition):

Cheng, Peng. “Reliability of SiGe HBTs for extreme environment and RF applications.” 2010. Web. 22 Apr 2019.

Vancouver:

Cheng P. Reliability of SiGe HBTs for extreme environment and RF applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2010. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/42836.

Council of Science Editors:

Cheng P. Reliability of SiGe HBTs for extreme environment and RF applications. [Doctoral Dissertation]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/42836


Georgia Tech

30. Vera, Aida Luz. Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 The objective of this work is to achieve the integration of a state-of-the-art RF CMOS chip in lightweight multilayer-organic (MLO) substrates at millimeter-wave frequencies. To… (more)

Subjects/Keywords: 3D-printing; Additive manufacturing (AM); Antenna arrays; Antenna-in-package (AiP); Antenna-on-chip (AoC); Dual-band package; Flip chip bonding; Liquid crystal polymer (LCP); Material characterization; Millimeter-wave (mm-wave); Multilayer organic (MLO); RF front-end; Wirebonds

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APA (6th Edition):

Vera, A. L. (2015). Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55513

Chicago Manual of Style (16th Edition):

Vera, Aida Luz. “Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications.” 2015. Doctoral Dissertation, Georgia Tech. Accessed April 22, 2019. http://hdl.handle.net/1853/55513.

MLA Handbook (7th Edition):

Vera, Aida Luz. “Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications.” 2015. Web. 22 Apr 2019.

Vancouver:

Vera AL. Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1853/55513.

Council of Science Editors:

Vera AL. Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/55513

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