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You searched for +publisher:"Georgia Tech" +contributor:("Cressler, John D."). Showing records 1 – 30 of 57 total matches.

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Georgia Tech

1. Hershberger, Kyle M. In-situ S-Parameter Analysis and Applications.

Degree: MS, Electrical and Computer Engineering, 2014, Georgia Tech

 This thesis will begin with an investigation on the limitations associated with the predominate two-port stability analysis techniques with respect to multi-stage RF amplifier design.… (more)

Subjects/Keywords: S-parameters; In-situ; Stability; RF; Network analysis; Communication Network analysis; Radio frequency; Amplifiers, Radio frequency

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APA (6th Edition):

Hershberger, K. M. (2014). In-situ S-Parameter Analysis and Applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/51839

Chicago Manual of Style (16th Edition):

Hershberger, Kyle M. “In-situ S-Parameter Analysis and Applications.” 2014. Masters Thesis, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/51839.

MLA Handbook (7th Edition):

Hershberger, Kyle M. “In-situ S-Parameter Analysis and Applications.” 2014. Web. 28 Feb 2020.

Vancouver:

Hershberger KM. In-situ S-Parameter Analysis and Applications. [Internet] [Masters thesis]. Georgia Tech; 2014. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/51839.

Council of Science Editors:

Hershberger KM. In-situ S-Parameter Analysis and Applications. [Masters Thesis]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/51839


Georgia Tech

2. Raghunathan, Uppili Srinivasan. TCAD modeling of mixed-mode degradation in SiGe HBTs.

Degree: MS, Electrical and Computer Engineering, 2014, Georgia Tech

 The objective of this work is to develop an effective TCAD based hot-carrier degradation model in predicting the damage that a SiGe HBT undergoes as… (more)

Subjects/Keywords: SiGe HBT; Hot-carrier; Reliability modeling; Lucky electron model

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APA (6th Edition):

Raghunathan, U. S. (2014). TCAD modeling of mixed-mode degradation in SiGe HBTs. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54315

Chicago Manual of Style (16th Edition):

Raghunathan, Uppili Srinivasan. “TCAD modeling of mixed-mode degradation in SiGe HBTs.” 2014. Masters Thesis, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/54315.

MLA Handbook (7th Edition):

Raghunathan, Uppili Srinivasan. “TCAD modeling of mixed-mode degradation in SiGe HBTs.” 2014. Web. 28 Feb 2020.

Vancouver:

Raghunathan US. TCAD modeling of mixed-mode degradation in SiGe HBTs. [Internet] [Masters thesis]. Georgia Tech; 2014. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/54315.

Council of Science Editors:

Raghunathan US. TCAD modeling of mixed-mode degradation in SiGe HBTs. [Masters Thesis]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/54315


Georgia Tech

3. Wier, Brian R. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.

Degree: MS, Electrical and Computer Engineering, 2015, Georgia Tech

 This thesis describes the characterization and modeling of various hot carrier degradation mechanisms in silicon-germanium heterojunction bipolar transistors. An analysis of measured stress data and… (more)

Subjects/Keywords: Hot carrier; Reliability; SiGe HBT

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APA (6th Edition):

Wier, B. R. (2015). Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60401

Chicago Manual of Style (16th Edition):

Wier, Brian R. “Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.” 2015. Masters Thesis, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/60401.

MLA Handbook (7th Edition):

Wier, Brian R. “Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.” 2015. Web. 28 Feb 2020.

Vancouver:

Wier BR. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. [Internet] [Masters thesis]. Georgia Tech; 2015. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/60401.

Council of Science Editors:

Wier BR. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. [Masters Thesis]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/60401


Georgia Tech

4. Ying, Hanbin. Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures.

Degree: MS, Electrical and Computer Engineering, 2019, Georgia Tech

 Silicon germanium heterojunction bipolar transistors (SiGe HBTs) have recently gained attention due to their potential for use in quantum computing readout circuits. To serve such… (more)

Subjects/Keywords: SiGe HBTs; Cryogenic; Quantum computing; Scaling

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APA (6th Edition):

Ying, H. (2019). Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/61292

Chicago Manual of Style (16th Edition):

Ying, Hanbin. “Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures.” 2019. Masters Thesis, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/61292.

MLA Handbook (7th Edition):

Ying, Hanbin. “Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures.” 2019. Web. 28 Feb 2020.

Vancouver:

Ying H. Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures. [Internet] [Masters thesis]. Georgia Tech; 2019. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/61292.

Council of Science Editors:

Ying H. Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures. [Masters Thesis]. Georgia Tech; 2019. Available from: http://hdl.handle.net/1853/61292


Georgia Tech

5. Howard, Duane Clarence. Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 The design of reconfigurable microwave and millimeter-wave circuit components and on-chip testing circuitry are demonstrated. These components are designed to enable the mitigation of process… (more)

Subjects/Keywords: Microwave systems; RF systems; Tunable circuits; Automated testing; Built-in-self testing; Self-healing; Integrated circuits; Microwave integrated circuits; Electronic circuits; Microwave circuits

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APA (6th Edition):

Howard, D. C. (2014). Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/51823

Chicago Manual of Style (16th Edition):

Howard, Duane Clarence. “Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology.” 2014. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/51823.

MLA Handbook (7th Edition):

Howard, Duane Clarence. “Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology.” 2014. Web. 28 Feb 2020.

Vancouver:

Howard DC. Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/51823.

Council of Science Editors:

Howard DC. Reconfigurable amplifiers and circuit components for built-in-self testing and self-healing in SiGe BiCMOS technology. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/51823


Georgia Tech

6. Saha, Prabir K. SiGe BiCMOS RF front-ends for adaptive wideband receivers.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 The pursuit of dense monolithic integration and higher operating speed continues to push the integrated circuit (IC) fabrication technologies to their limits. The increasing process… (more)

Subjects/Keywords: Self-healing; Adaptive; Mixer; Image-rejection; RF; LNA; SPDT

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APA (6th Edition):

Saha, P. K. (2013). SiGe BiCMOS RF front-ends for adaptive wideband receivers. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52184

Chicago Manual of Style (16th Edition):

Saha, Prabir K. “SiGe BiCMOS RF front-ends for adaptive wideband receivers.” 2013. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/52184.

MLA Handbook (7th Edition):

Saha, Prabir K. “SiGe BiCMOS RF front-ends for adaptive wideband receivers.” 2013. Web. 28 Feb 2020.

Vancouver:

Saha PK. SiGe BiCMOS RF front-ends for adaptive wideband receivers. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/52184.

Council of Science Editors:

Saha PK. SiGe BiCMOS RF front-ends for adaptive wideband receivers. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/52184


Georgia Tech

7. Banerjee, Debashis. Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 In the thesis the design of process tolerant, use-aware radio-frequency front-ends were explored. First, the design of fuzzy logic and equation based controllers, which can… (more)

Subjects/Keywords: Radio frequency; Adaptation; Low noise amplifier; LNA; Front-end; Fuzzy logic; Learning; Energy-per-bit; Mixer; Clustering; Process Variation; Channel

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APA (6th Edition):

Banerjee, D. (2015). Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53882

Chicago Manual of Style (16th Edition):

Banerjee, Debashis. “Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications.” 2015. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/53882.

MLA Handbook (7th Edition):

Banerjee, Debashis. “Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications.” 2015. Web. 28 Feb 2020.

Vancouver:

Banerjee D. Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/53882.

Council of Science Editors:

Banerjee D. Intelligent real-time environment and process adaptive radio frequency front-ends for ultra low power applications. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/53882


Georgia Tech

8. Niu, Simiao. Theory of triboelectric nanogenerators for self-powered systems.

Degree: PhD, Materials Science and Engineering, 2016, Georgia Tech

 Energy science is becoming an increasingly important multi-disciplinary area, for not only addressing the worldwide energy crisis, but also realizing desired power sources with advanced… (more)

Subjects/Keywords: Triboelectric nanogenerators; Self-powered systems; Simulation

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APA (6th Edition):

Niu, S. (2016). Theory of triboelectric nanogenerators for self-powered systems. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54954

Chicago Manual of Style (16th Edition):

Niu, Simiao. “Theory of triboelectric nanogenerators for self-powered systems.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/54954.

MLA Handbook (7th Edition):

Niu, Simiao. “Theory of triboelectric nanogenerators for self-powered systems.” 2016. Web. 28 Feb 2020.

Vancouver:

Niu S. Theory of triboelectric nanogenerators for self-powered systems. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/54954.

Council of Science Editors:

Niu S. Theory of triboelectric nanogenerators for self-powered systems. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/54954


Georgia Tech

9. Vera, Aida Luz. Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 The objective of this work is to achieve the integration of a state-of-the-art RF CMOS chip in lightweight multilayer-organic (MLO) substrates at millimeter-wave frequencies. To… (more)

Subjects/Keywords: 3D-printing; Additive manufacturing (AM); Antenna arrays; Antenna-in-package (AiP); Antenna-on-chip (AoC); Dual-band package; Flip chip bonding; Liquid crystal polymer (LCP); Material characterization; Millimeter-wave (mm-wave); Multilayer organic (MLO); RF front-end; Wirebonds

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APA (6th Edition):

Vera, A. L. (2015). Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55513

Chicago Manual of Style (16th Edition):

Vera, Aida Luz. “Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications.” 2015. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/55513.

MLA Handbook (7th Edition):

Vera, Aida Luz. “Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications.” 2015. Web. 28 Feb 2020.

Vancouver:

Vera AL. Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/55513.

Council of Science Editors:

Vera AL. Dual-band lightweight, low-cost RF front-end solutions for point-to-point wireless applications. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/55513


Georgia Tech

10. Chakraborty, Partha Sarathi. Design, scaling and reliability of devices for high-performance mixed-signal applications.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 This research investigates and gains new understanding on how silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) device design couples with both performance scaling and reliability for… (more)

Subjects/Keywords: Silicon-germanium; Heterojunction bipolar transistor; TCAD; Scaling; Reliability; Device design; Mixed-signal; Simulation; High-frequency; Cryogenic temperature; Characterization

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APA (6th Edition):

Chakraborty, P. S. (2015). Design, scaling and reliability of devices for high-performance mixed-signal applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58137

Chicago Manual of Style (16th Edition):

Chakraborty, Partha Sarathi. “Design, scaling and reliability of devices for high-performance mixed-signal applications.” 2015. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/58137.

MLA Handbook (7th Edition):

Chakraborty, Partha Sarathi. “Design, scaling and reliability of devices for high-performance mixed-signal applications.” 2015. Web. 28 Feb 2020.

Vancouver:

Chakraborty PS. Design, scaling and reliability of devices for high-performance mixed-signal applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/58137.

Council of Science Editors:

Chakraborty PS. Design, scaling and reliability of devices for high-performance mixed-signal applications. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/58137


Georgia Tech

11. Lourenco, Nelson Estacio. Mitigation of transient radiation effects in advanced silicon-germanium technologies.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The need for flexible, low-cost electronics in extreme environment applications has brought silicon-germanium (SiGe) technologies into the spotlight, but the viable long-term capability of these… (more)

Subjects/Keywords: SiGe; Radiation; Hardening; Silicon-germanium; Single-event effects

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APA (6th Edition):

Lourenco, N. E. (2016). Mitigation of transient radiation effects in advanced silicon-germanium technologies. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58187

Chicago Manual of Style (16th Edition):

Lourenco, Nelson Estacio. “Mitigation of transient radiation effects in advanced silicon-germanium technologies.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/58187.

MLA Handbook (7th Edition):

Lourenco, Nelson Estacio. “Mitigation of transient radiation effects in advanced silicon-germanium technologies.” 2016. Web. 28 Feb 2020.

Vancouver:

Lourenco NE. Mitigation of transient radiation effects in advanced silicon-germanium technologies. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/58187.

Council of Science Editors:

Lourenco NE. Mitigation of transient radiation effects in advanced silicon-germanium technologies. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58187


Georgia Tech

12. Pavlidis, Spyridon. Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 Wide band gap (WBG) semiconductors offer a number of unique properties not achievable by traditional silicon, such as optical transparency in the visible wavelength regime,… (more)

Subjects/Keywords: Chemical sensor; Thin film transistor; Metal oxide semiconductors; Wide band gap semiconductors; High frequency; Radio frequency; Packaging; Power amplifier; Receiver; System on package

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APA (6th Edition):

Pavlidis, S. (2016). Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58606

Chicago Manual of Style (16th Edition):

Pavlidis, Spyridon. “Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/58606.

MLA Handbook (7th Edition):

Pavlidis, Spyridon. “Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits.” 2016. Web. 28 Feb 2020.

Vancouver:

Pavlidis S. Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/58606.

Council of Science Editors:

Pavlidis S. Investigation of wide band gap semiconductors: InGaZnO TFTs for chemical sensing and hybrid GaN/organic high-frequency packaging and circuits. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58606


Georgia Tech

13. Oakley, Michael Alan. Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 This work focuses on the electrothermal impact of large voltage swings on silicon-germanium heterojunction bipolar transistors used in radio frequency amplifiers. Measurement data and simulation… (more)

Subjects/Keywords: Silicon-germanium; Heterojunction bipolar transistor; Radio frequency; Reliability; Power amplifier; Low-noise amplifier; Large-signal; Technology computer-aided design; Thermal simulation; Electrothermal interaction; Breakdown; Design guidelines; High-resistivity substrate; Measurement techniques; Mutual thermal coupling; Mutual heating

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APA (6th Edition):

Oakley, M. A. (2016). Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58609

Chicago Manual of Style (16th Edition):

Oakley, Michael Alan. “Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/58609.

MLA Handbook (7th Edition):

Oakley, Michael Alan. “Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers.” 2016. Web. 28 Feb 2020.

Vancouver:

Oakley MA. Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/58609.

Council of Science Editors:

Oakley MA. Large-signal reliability of silicon-germanium heterojunction bipolar transistor amplifiers. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58609


Georgia Tech

14. Song, Ickhyun. Design of SIGE BICMOS RF building blocks for extreme-environment applications.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The objective of this research is to understand the behavior of radio-frequency (RF) circuits under extreme-environment condition and to investigate the potential mitigation solution for… (more)

Subjects/Keywords: SiGe; BiCMOS; HBT; RF; Extreme environment

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APA (6th Edition):

Song, I. (2016). Design of SIGE BICMOS RF building blocks for extreme-environment applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59139

Chicago Manual of Style (16th Edition):

Song, Ickhyun. “Design of SIGE BICMOS RF building blocks for extreme-environment applications.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/59139.

MLA Handbook (7th Edition):

Song, Ickhyun. “Design of SIGE BICMOS RF building blocks for extreme-environment applications.” 2016. Web. 28 Feb 2020.

Vancouver:

Song I. Design of SIGE BICMOS RF building blocks for extreme-environment applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/59139.

Council of Science Editors:

Song I. Design of SIGE BICMOS RF building blocks for extreme-environment applications. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/59139


Georgia Tech

15. Coen, Christopher Timothy. Silicon-germanium HBT receiver components for millimeter-wave earth-observing radiometers.

Degree: PhD, Electrical and Computer Engineering, 2017, Georgia Tech

 The objective of this research is to leverage silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) integrated circuit technologies to develop millimeter-wave receiver components for future space-based… (more)

Subjects/Keywords: Radiometer; Integrated circuits; Remote sensing; Silicon-germanium; Circuit design; Amplifier; Millimeter-wave; CubeSat

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APA (6th Edition):

Coen, C. T. (2017). Silicon-germanium HBT receiver components for millimeter-wave earth-observing radiometers. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59773

Chicago Manual of Style (16th Edition):

Coen, Christopher Timothy. “Silicon-germanium HBT receiver components for millimeter-wave earth-observing radiometers.” 2017. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/59773.

MLA Handbook (7th Edition):

Coen, Christopher Timothy. “Silicon-germanium HBT receiver components for millimeter-wave earth-observing radiometers.” 2017. Web. 28 Feb 2020.

Vancouver:

Coen CT. Silicon-germanium HBT receiver components for millimeter-wave earth-observing radiometers. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/59773.

Council of Science Editors:

Coen CT. Silicon-germanium HBT receiver components for millimeter-wave earth-observing radiometers. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/59773


Georgia Tech

16. Ju, Inchan. A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies.

Degree: PhD, Electrical and Computer Engineering, 2018, Georgia Tech

 The goal of the proposed research is to develop multiple design methodologies of power amplifiers (PAs) using silicon germanium (SiGe) heterojunction bipolar junction transistor (HBT)… (more)

Subjects/Keywords: Power amplifier; HBT; SiGe

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APA (6th Edition):

Ju, I. (2018). A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/61180

Chicago Manual of Style (16th Edition):

Ju, Inchan. “A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies.” 2018. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/61180.

MLA Handbook (7th Edition):

Ju, Inchan. “A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies.” 2018. Web. 28 Feb 2020.

Vancouver:

Ju I. A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies. [Internet] [Doctoral dissertation]. Georgia Tech; 2018. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/61180.

Council of Science Editors:

Ju I. A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies. [Doctoral Dissertation]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/61180

17. Gong, Yunyi. Design of switch-less silicon-germanium bi-directional amplifier for loss compensation in passive transmit/receive modules.

Degree: MS, Electrical and Computer Engineering, 2018, Georgia Tech

 The objective of the proposed research is to investigate the design of switch-less bi-directional amplifier (BDA) for loss compensation in passive transmit/receive (T/R) modules, using… (more)

Subjects/Keywords: Bi-directional; Phased array; SiGe BiCMOS

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APA (6th Edition):

Gong, Y. (2018). Design of switch-less silicon-germanium bi-directional amplifier for loss compensation in passive transmit/receive modules. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/61129

Chicago Manual of Style (16th Edition):

Gong, Yunyi. “Design of switch-less silicon-germanium bi-directional amplifier for loss compensation in passive transmit/receive modules.” 2018. Masters Thesis, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/61129.

MLA Handbook (7th Edition):

Gong, Yunyi. “Design of switch-less silicon-germanium bi-directional amplifier for loss compensation in passive transmit/receive modules.” 2018. Web. 28 Feb 2020.

Vancouver:

Gong Y. Design of switch-less silicon-germanium bi-directional amplifier for loss compensation in passive transmit/receive modules. [Internet] [Masters thesis]. Georgia Tech; 2018. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/61129.

Council of Science Editors:

Gong Y. Design of switch-less silicon-germanium bi-directional amplifier for loss compensation in passive transmit/receive modules. [Masters Thesis]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/61129

18. Ildefonso, Adrian. An Assessment of Complementary Silicon-Germanium BiCMOS Technologies for Extreme Environment Applications.

Degree: MS, Electrical and Computer Engineering, 2017, Georgia Tech

 The objective of the presented research is to assess the potential of complementary Silicon-Germanium (SiGe) BiCMOS technologies for extreme environment applications, specifically, radiation-intense environments. We… (more)

Subjects/Keywords: Silicon-germanium HBTs; Complementary platforms; Radiation effects, single-event effects; Single-event transients; Radiation hardening by design

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APA (6th Edition):

Ildefonso, A. (2017). An Assessment of Complementary Silicon-Germanium BiCMOS Technologies for Extreme Environment Applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/61093

Chicago Manual of Style (16th Edition):

Ildefonso, Adrian. “An Assessment of Complementary Silicon-Germanium BiCMOS Technologies for Extreme Environment Applications.” 2017. Masters Thesis, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/61093.

MLA Handbook (7th Edition):

Ildefonso, Adrian. “An Assessment of Complementary Silicon-Germanium BiCMOS Technologies for Extreme Environment Applications.” 2017. Web. 28 Feb 2020.

Vancouver:

Ildefonso A. An Assessment of Complementary Silicon-Germanium BiCMOS Technologies for Extreme Environment Applications. [Internet] [Masters thesis]. Georgia Tech; 2017. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/61093.

Council of Science Editors:

Ildefonso A. An Assessment of Complementary Silicon-Germanium BiCMOS Technologies for Extreme Environment Applications. [Masters Thesis]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/61093

19. Fleetwood, Zachary E. On the effects of total ionizing dose in silicon-germanium BiCMOS platforms.

Degree: MS, Electrical and Computer Engineering, 2014, Georgia Tech

 The objective of the proposed research is to analyze the effects of total ionizing dose (TID) on highly scaled CMOS and Silicon-Germanium Heterojunction Bipolar Transistors… (more)

Subjects/Keywords: Silicon-germanium; HBT; Radiation; TID; SiGe; CMOS

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APA (6th Edition):

Fleetwood, Z. E. (2014). On the effects of total ionizing dose in silicon-germanium BiCMOS platforms. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53108

Chicago Manual of Style (16th Edition):

Fleetwood, Zachary E. “On the effects of total ionizing dose in silicon-germanium BiCMOS platforms.” 2014. Masters Thesis, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/53108.

MLA Handbook (7th Edition):

Fleetwood, Zachary E. “On the effects of total ionizing dose in silicon-germanium BiCMOS platforms.” 2014. Web. 28 Feb 2020.

Vancouver:

Fleetwood ZE. On the effects of total ionizing dose in silicon-germanium BiCMOS platforms. [Internet] [Masters thesis]. Georgia Tech; 2014. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/53108.

Council of Science Editors:

Fleetwood ZE. On the effects of total ionizing dose in silicon-germanium BiCMOS platforms. [Masters Thesis]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/53108

20. Song, Peter. Millimeter-wave integrated circuit design in silicon-germanium technology for next generation radars.

Degree: MS, Electrical and Computer Engineering, 2014, Georgia Tech

 In this thesis, the circuits which comprise the front-end of a millimeter-wave transmit-receive module are investigated using a state-of-the-art 90 nm SiGe BiCMOS process for… (more)

Subjects/Keywords: Millimeter-wave; Transmit-receive module; SiGe; Integrated circuit; Low-noise amplifier; Single-pole double-throw switch; Silicon-germanium

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APA (6th Edition):

Song, P. (2014). Millimeter-wave integrated circuit design in silicon-germanium technology for next generation radars. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53450

Chicago Manual of Style (16th Edition):

Song, Peter. “Millimeter-wave integrated circuit design in silicon-germanium technology for next generation radars.” 2014. Masters Thesis, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/53450.

MLA Handbook (7th Edition):

Song, Peter. “Millimeter-wave integrated circuit design in silicon-germanium technology for next generation radars.” 2014. Web. 28 Feb 2020.

Vancouver:

Song P. Millimeter-wave integrated circuit design in silicon-germanium technology for next generation radars. [Internet] [Masters thesis]. Georgia Tech; 2014. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/53450.

Council of Science Editors:

Song P. Millimeter-wave integrated circuit design in silicon-germanium technology for next generation radars. [Masters Thesis]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/53450

21. Cardoso, Adilson S. Design of high-isolation and wideband RF switches in SiGe BiCMOS technology for radar applications.

Degree: MS, Electrical and Computer Engineering, 2012, Georgia Tech

 RF switches are an essential building block in numerous applications, including tactical radar systems, satellite communications, global positioning systems (GPS), automotive radars, wireless communications, radio… (more)

Subjects/Keywords: Single-pole single-throw (SPST); Single-pole four-throw (SP4T); FET switch; SiGe; High isolation switch; RF switch cryogenic effects; FET cryogenic operation; Radar switch design; Radar microwave switch; BiCMOS RF switch; Radar Materials; Germanium; Integrated circuits

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APA (6th Edition):

Cardoso, A. S. (2012). Design of high-isolation and wideband RF switches in SiGe BiCMOS technology for radar applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/43694

Chicago Manual of Style (16th Edition):

Cardoso, Adilson S. “Design of high-isolation and wideband RF switches in SiGe BiCMOS technology for radar applications.” 2012. Masters Thesis, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/43694.

MLA Handbook (7th Edition):

Cardoso, Adilson S. “Design of high-isolation and wideband RF switches in SiGe BiCMOS technology for radar applications.” 2012. Web. 28 Feb 2020.

Vancouver:

Cardoso AS. Design of high-isolation and wideband RF switches in SiGe BiCMOS technology for radar applications. [Internet] [Masters thesis]. Georgia Tech; 2012. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/43694.

Council of Science Editors:

Cardoso AS. Design of high-isolation and wideband RF switches in SiGe BiCMOS technology for radar applications. [Masters Thesis]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/43694

22. Wachter, Mason Thomas. On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform.

Degree: MS, Electrical and Computer Engineering, 2017, Georgia Tech

 The objective of this thesis is to analyze the effects of total ionizing dose radiation on transient response of the Silicon-Germanium BiCMOS platform. Accumulation of… (more)

Subjects/Keywords: SiGe

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APA (6th Edition):

Wachter, M. T. (2017). On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58740

Chicago Manual of Style (16th Edition):

Wachter, Mason Thomas. “On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform.” 2017. Masters Thesis, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/58740.

MLA Handbook (7th Edition):

Wachter, Mason Thomas. “On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform.” 2017. Web. 28 Feb 2020.

Vancouver:

Wachter MT. On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform. [Internet] [Masters thesis]. Georgia Tech; 2017. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/58740.

Council of Science Editors:

Wachter MT. On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform. [Masters Thesis]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/58740


Georgia Tech

23. Serrano, Diego Emilio. Integrated inertial measurement units using silicon bulk-acoustic wave gyroscopes.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 This dissertation discusses the design, simulation and characterization of process-compatible accelerometers and gyroscopes for the implementation of multi-degree-of-freedom (multi-DOF) systems. All components presented herein were… (more)

Subjects/Keywords: Micromechanical sensors; MEMS; Gyroscopes; Accelerometers; Inertial sensors; Inertial navigation; Silicon resonators; Bulk acoustic wave; Anchor loss

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APA (6th Edition):

Serrano, D. E. (2014). Integrated inertial measurement units using silicon bulk-acoustic wave gyroscopes. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54283

Chicago Manual of Style (16th Edition):

Serrano, Diego Emilio. “Integrated inertial measurement units using silicon bulk-acoustic wave gyroscopes.” 2014. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/54283.

MLA Handbook (7th Edition):

Serrano, Diego Emilio. “Integrated inertial measurement units using silicon bulk-acoustic wave gyroscopes.” 2014. Web. 28 Feb 2020.

Vancouver:

Serrano DE. Integrated inertial measurement units using silicon bulk-acoustic wave gyroscopes. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/54283.

Council of Science Editors:

Serrano DE. Integrated inertial measurement units using silicon bulk-acoustic wave gyroscopes. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/54283


Georgia Tech

24. Fleetwood, Zachary Evan. Qualifying silicon-germanium electronics for harsh radiation environments.

Degree: PhD, Electrical and Computer Engineering, 2018, Georgia Tech

 The objective of this thesis is to investigate the robustness of Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) to radiation-induced damage. The work described in this… (more)

Subjects/Keywords: SiGe HBT; TID; SEE; Radiation; Superjunction; DD; Profile modifications

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APA (6th Edition):

Fleetwood, Z. E. (2018). Qualifying silicon-germanium electronics for harsh radiation environments. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59891

Chicago Manual of Style (16th Edition):

Fleetwood, Zachary Evan. “Qualifying silicon-germanium electronics for harsh radiation environments.” 2018. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/59891.

MLA Handbook (7th Edition):

Fleetwood, Zachary Evan. “Qualifying silicon-germanium electronics for harsh radiation environments.” 2018. Web. 28 Feb 2020.

Vancouver:

Fleetwood ZE. Qualifying silicon-germanium electronics for harsh radiation environments. [Internet] [Doctoral dissertation]. Georgia Tech; 2018. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/59891.

Council of Science Editors:

Fleetwood ZE. Qualifying silicon-germanium electronics for harsh radiation environments. [Doctoral Dissertation]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/59891


Georgia Tech

25. Pavlidis, Georges. Assessing the Performance and Reliability of GaN Based Electronics via Optical and Electrical Methods.

Degree: PhD, Mechanical Engineering, 2018, Georgia Tech

 Gallium nitride (GaN) based electronics have shown great potential for RF devices and power electronics. Its superior material properties have enabled the fabrication of high… (more)

Subjects/Keywords: Heat Transfer; HEMTs; GaN; Thermometry Techniques; Nanoscale; MEMS

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APA (6th Edition):

Pavlidis, G. (2018). Assessing the Performance and Reliability of GaN Based Electronics via Optical and Electrical Methods. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/61135

Chicago Manual of Style (16th Edition):

Pavlidis, Georges. “Assessing the Performance and Reliability of GaN Based Electronics via Optical and Electrical Methods.” 2018. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/61135.

MLA Handbook (7th Edition):

Pavlidis, Georges. “Assessing the Performance and Reliability of GaN Based Electronics via Optical and Electrical Methods.” 2018. Web. 28 Feb 2020.

Vancouver:

Pavlidis G. Assessing the Performance and Reliability of GaN Based Electronics via Optical and Electrical Methods. [Internet] [Doctoral dissertation]. Georgia Tech; 2018. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/61135.

Council of Science Editors:

Pavlidis G. Assessing the Performance and Reliability of GaN Based Electronics via Optical and Electrical Methods. [Doctoral Dissertation]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/61135


Georgia Tech

26. Zeinolabedinzadeh Namarvar, Saeed. Millimeter-wave and Terahertz Integrated Circuits for Extreme Environments.

Degree: PhD, Electrical and Computer Engineering, 2017, Georgia Tech

 The objective of this research is to study the implementation of high frequency millimeter-wave (mmW) and Terahertz (THz) integrated circuits in silicon technologies for space… (more)

Subjects/Keywords: Automotive radar; BiCMOS; Coupled VCOs; D-band; FMCW; Fully integrated; Fully phase-locked; Locking-range; Imaging; Low noise; Millimeter-wave; Phase noise; PLL; Power efficiency; Radar; Receiver; Synthesizer; Terahertz; Transceiver; SiGe; VCO; Wideband.

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APA (6th Edition):

Zeinolabedinzadeh Namarvar, S. (2017). Millimeter-wave and Terahertz Integrated Circuits for Extreme Environments. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60666

Chicago Manual of Style (16th Edition):

Zeinolabedinzadeh Namarvar, Saeed. “Millimeter-wave and Terahertz Integrated Circuits for Extreme Environments.” 2017. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/60666.

MLA Handbook (7th Edition):

Zeinolabedinzadeh Namarvar, Saeed. “Millimeter-wave and Terahertz Integrated Circuits for Extreme Environments.” 2017. Web. 28 Feb 2020.

Vancouver:

Zeinolabedinzadeh Namarvar S. Millimeter-wave and Terahertz Integrated Circuits for Extreme Environments. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/60666.

Council of Science Editors:

Zeinolabedinzadeh Namarvar S. Millimeter-wave and Terahertz Integrated Circuits for Extreme Environments. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/60666

27. Norouz Pour Shirazi, Arashk. Advanced interface systems for readout, control, and self-calibration of MEMS resonant gyroscopes.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 MEMS gyroscopes have become an essential component in consumer, industrial and automotive applications, owing to their small form factor and low production cost. However, their… (more)

Subjects/Keywords: Electrical self-calibration; Inertial sensors; Interface circuits; MEMS gyroscopes

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APA (6th Edition):

Norouz Pour Shirazi, A. (2016). Advanced interface systems for readout, control, and self-calibration of MEMS resonant gyroscopes. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54936

Chicago Manual of Style (16th Edition):

Norouz Pour Shirazi, Arashk. “Advanced interface systems for readout, control, and self-calibration of MEMS resonant gyroscopes.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/54936.

MLA Handbook (7th Edition):

Norouz Pour Shirazi, Arashk. “Advanced interface systems for readout, control, and self-calibration of MEMS resonant gyroscopes.” 2016. Web. 28 Feb 2020.

Vancouver:

Norouz Pour Shirazi A. Advanced interface systems for readout, control, and self-calibration of MEMS resonant gyroscopes. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/54936.

Council of Science Editors:

Norouz Pour Shirazi A. Advanced interface systems for readout, control, and self-calibration of MEMS resonant gyroscopes. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/54936

28. Shankar, Subramaniam. High-speed, high-performance wireless and wireline applications using silicon-germanium BiCMOS technologies.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 The objective of the research in this dissertation is to demonstrate the viability of using silicon-germanium (SiGe) bipolar/complementary metal-oxide semiconductor (BiCMOS) technologies in novel high-speed,… (more)

Subjects/Keywords: Wireless; Wireline; Silicon germanium; BiCMOS; Oscillator; High speed; Millimeter wave; Radar; SiGe; PLL; Metal oxide semiconductors; Wireless communication systems

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APA (6th Edition):

Shankar, S. (2013). High-speed, high-performance wireless and wireline applications using silicon-germanium BiCMOS technologies. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/48958

Chicago Manual of Style (16th Edition):

Shankar, Subramaniam. “High-speed, high-performance wireless and wireline applications using silicon-germanium BiCMOS technologies.” 2013. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/48958.

MLA Handbook (7th Edition):

Shankar, Subramaniam. “High-speed, high-performance wireless and wireline applications using silicon-germanium BiCMOS technologies.” 2013. Web. 28 Feb 2020.

Vancouver:

Shankar S. High-speed, high-performance wireless and wireline applications using silicon-germanium BiCMOS technologies. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/48958.

Council of Science Editors:

Shankar S. High-speed, high-performance wireless and wireline applications using silicon-germanium BiCMOS technologies. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/48958

29. Hosseinnia, Amir Hossein. Hybrid material and device platforms for the next-generation integrated nanophotonics.

Degree: PhD, Electrical and Computer Engineering, 2018, Georgia Tech

 Owing to its mature integration technology in the microelectronics industry, silicon (Si) has been extensively used in the past two decades to demonstrate various photonic… (more)

Subjects/Keywords: Optics; Integrated photonics; Photonic device design; Hybrid material platforms

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APA (6th Edition):

Hosseinnia, A. H. (2018). Hybrid material and device platforms for the next-generation integrated nanophotonics. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/61116

Chicago Manual of Style (16th Edition):

Hosseinnia, Amir Hossein. “Hybrid material and device platforms for the next-generation integrated nanophotonics.” 2018. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/61116.

MLA Handbook (7th Edition):

Hosseinnia, Amir Hossein. “Hybrid material and device platforms for the next-generation integrated nanophotonics.” 2018. Web. 28 Feb 2020.

Vancouver:

Hosseinnia AH. Hybrid material and device platforms for the next-generation integrated nanophotonics. [Internet] [Doctoral dissertation]. Georgia Tech; 2018. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/61116.

Council of Science Editors:

Hosseinnia AH. Hybrid material and device platforms for the next-generation integrated nanophotonics. [Doctoral Dissertation]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/61116

30. Lee, Byunghun. A robust wirelessly-powered recording and stimulation system for a freely-moving animal subject.

Degree: PhD, Electrical and Computer Engineering, 2017, Georgia Tech

 A robust wirelessly-powered recording and stimulation system for a freely-moving animal subject is proposed. The proposed research is composed of two parts: 1) several wireless… (more)

Subjects/Keywords: Wireless power transfer system; RFID; Load modulation; Distributed implants; Low noise amplifier; Current stimulation; Analog front end; Central nerve recording; Peripheral nerve interface

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APA (6th Edition):

Lee, B. (2017). A robust wirelessly-powered recording and stimulation system for a freely-moving animal subject. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59797

Chicago Manual of Style (16th Edition):

Lee, Byunghun. “A robust wirelessly-powered recording and stimulation system for a freely-moving animal subject.” 2017. Doctoral Dissertation, Georgia Tech. Accessed February 28, 2020. http://hdl.handle.net/1853/59797.

MLA Handbook (7th Edition):

Lee, Byunghun. “A robust wirelessly-powered recording and stimulation system for a freely-moving animal subject.” 2017. Web. 28 Feb 2020.

Vancouver:

Lee B. A robust wirelessly-powered recording and stimulation system for a freely-moving animal subject. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2020 Feb 28]. Available from: http://hdl.handle.net/1853/59797.

Council of Science Editors:

Lee B. A robust wirelessly-powered recording and stimulation system for a freely-moving animal subject. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/59797

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