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You searched for +publisher:"Georgia Tech" +contributor:("Conrad, Edward H."). Showing records 1 – 13 of 13 total matches.

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Georgia Tech

1. Li, Yuntao. Nanostructured graphene on Si-terminated SiC and its electronic properties.

Degree: PhD, Physics, 2016, Georgia Tech

 Graphene nanostructures directly grown on SiC are appealing for their potential application to nano-scale electronic devices. In particular, epitaxial sidewall graphene nanoribbons have been a… (more)

Subjects/Keywords: Graphene; Nanoribbon; STM; Epitaxy; Strain; Sidewall

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APA (6th Edition):

Li, Y. (2016). Nanostructured graphene on Si-terminated SiC and its electronic properties. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54964

Chicago Manual of Style (16th Edition):

Li, Yuntao. “Nanostructured graphene on Si-terminated SiC and its electronic properties.” 2016. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/54964.

MLA Handbook (7th Edition):

Li, Yuntao. “Nanostructured graphene on Si-terminated SiC and its electronic properties.” 2016. Web. 23 Sep 2019.

Vancouver:

Li Y. Nanostructured graphene on Si-terminated SiC and its electronic properties. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/54964.

Council of Science Editors:

Li Y. Nanostructured graphene on Si-terminated SiC and its electronic properties. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/54964


Georgia Tech

2. Xian, Lede. Electronic structure and interlayer coupling in twisted multilayer graphene.

Degree: PhD, Physics, 2014, Georgia Tech

 It has been shown recently that high-quality epitaxial graphene (EPG) can be grown on the SiC substrate that exhibits interesting physical properties and has great… (more)

Subjects/Keywords: Twisted multilayer graphene; Density functional theory; Tight-binding model; Electronic structure; Graphene; Mathematical models

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APA (6th Edition):

Xian, L. (2014). Electronic structure and interlayer coupling in twisted multilayer graphene. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/51811

Chicago Manual of Style (16th Edition):

Xian, Lede. “Electronic structure and interlayer coupling in twisted multilayer graphene.” 2014. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/51811.

MLA Handbook (7th Edition):

Xian, Lede. “Electronic structure and interlayer coupling in twisted multilayer graphene.” 2014. Web. 23 Sep 2019.

Vancouver:

Xian L. Electronic structure and interlayer coupling in twisted multilayer graphene. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/51811.

Council of Science Editors:

Xian L. Electronic structure and interlayer coupling in twisted multilayer graphene. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/51811


Georgia Tech

3. Wang, Feng. Surface/interface modification and characterization of C-face epitaxial graphene.

Degree: PhD, Physics, 2015, Georgia Tech

 Graphene has been one of the most interesting and widely investigated materials in the past decade. Because of its high mobility, high current density, inherent… (more)

Subjects/Keywords: SiC; Graphene; Graphite; Silicon carbide; Thin film

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APA (6th Edition):

Wang, F. (2015). Surface/interface modification and characterization of C-face epitaxial graphene. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53855

Chicago Manual of Style (16th Edition):

Wang, Feng. “Surface/interface modification and characterization of C-face epitaxial graphene.” 2015. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/53855.

MLA Handbook (7th Edition):

Wang, Feng. “Surface/interface modification and characterization of C-face epitaxial graphene.” 2015. Web. 23 Sep 2019.

Vancouver:

Wang F. Surface/interface modification and characterization of C-face epitaxial graphene. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/53855.

Council of Science Editors:

Wang F. Surface/interface modification and characterization of C-face epitaxial graphene. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/53855


Georgia Tech

4. Palmer, James Matthew. Pre-growth structures for high quality epitaxial graphene nanoelectronics grown on silicon carbide.

Degree: PhD, Physics, 2014, Georgia Tech

 For graphene to be a viable platform for nanoscale devices, high quality growth and structures are necessary. This means structuring the SiC surface to prevent… (more)

Subjects/Keywords: Graphene; Nanoelectronics; Condensed matter physics; Epitaxial graphene; Epitaxy; Silicon carbide; Tunneling; Step-flow; Amorphous carbon

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APA (6th Edition):

Palmer, J. M. (2014). Pre-growth structures for high quality epitaxial graphene nanoelectronics grown on silicon carbide. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54293

Chicago Manual of Style (16th Edition):

Palmer, James Matthew. “Pre-growth structures for high quality epitaxial graphene nanoelectronics grown on silicon carbide.” 2014. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/54293.

MLA Handbook (7th Edition):

Palmer, James Matthew. “Pre-growth structures for high quality epitaxial graphene nanoelectronics grown on silicon carbide.” 2014. Web. 23 Sep 2019.

Vancouver:

Palmer JM. Pre-growth structures for high quality epitaxial graphene nanoelectronics grown on silicon carbide. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/54293.

Council of Science Editors:

Palmer JM. Pre-growth structures for high quality epitaxial graphene nanoelectronics grown on silicon carbide. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/54293


Georgia Tech

5. Sprinkle, Michael W. Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication.

Degree: PhD, Physics, 2010, Georgia Tech

 In the past several years, epitaxial graphene on silicon carbide has been transformed from an academic curiosity of social scientists to a leading candidate material… (more)

Subjects/Keywords: Rotational stacking; Growth; Epitaxial; Ellipsometry; Graphene; Silicon carbide; Graphene; Epitaxy

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APA (6th Edition):

Sprinkle, M. W. (2010). Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/34735

Chicago Manual of Style (16th Edition):

Sprinkle, Michael W. “Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication.” 2010. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/34735.

MLA Handbook (7th Edition):

Sprinkle, Michael W. “Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication.” 2010. Web. 23 Sep 2019.

Vancouver:

Sprinkle MW. Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication. [Internet] [Doctoral dissertation]. Georgia Tech; 2010. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/34735.

Council of Science Editors:

Sprinkle MW. Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication. [Doctoral Dissertation]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/34735

6. Nevius, Meredith Swegan. Improved growth, ordering, and characterization of sidewall epitaxial graphene nanoribbons.

Degree: PhD, Physics, 2016, Georgia Tech

 One material that has drawn much attention as a viable supplementary material to silicon is graphene, an atom-thick sheet of carbon in a hexagonal lattice.… (more)

Subjects/Keywords: Graphene; Epitaxial graphene; Nanoribbons; Silicon carbide; Surface characterization

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APA (6th Edition):

Nevius, M. S. (2016). Improved growth, ordering, and characterization of sidewall epitaxial graphene nanoribbons. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55605

Chicago Manual of Style (16th Edition):

Nevius, Meredith Swegan. “Improved growth, ordering, and characterization of sidewall epitaxial graphene nanoribbons.” 2016. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/55605.

MLA Handbook (7th Edition):

Nevius, Meredith Swegan. “Improved growth, ordering, and characterization of sidewall epitaxial graphene nanoribbons.” 2016. Web. 23 Sep 2019.

Vancouver:

Nevius MS. Improved growth, ordering, and characterization of sidewall epitaxial graphene nanoribbons. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/55605.

Council of Science Editors:

Nevius MS. Improved growth, ordering, and characterization of sidewall epitaxial graphene nanoribbons. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55605

7. Yu, Wenlong. Infrared magneto-spectroscopy of graphite and graphene nanoribbons.

Degree: PhD, Physics, 2014, Georgia Tech

 The graphitic systems have attracted intensive attention recently due to the discovery of graphene, a single layer of graphite. The low-energy band structure of graphene… (more)

Subjects/Keywords: Infrared; Magneto-spectroscopy; Graphite; Graphene nanoribbon

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APA (6th Edition):

Yu, W. (2014). Infrared magneto-spectroscopy of graphite and graphene nanoribbons. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54244

Chicago Manual of Style (16th Edition):

Yu, Wenlong. “Infrared magneto-spectroscopy of graphite and graphene nanoribbons.” 2014. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/54244.

MLA Handbook (7th Edition):

Yu, Wenlong. “Infrared magneto-spectroscopy of graphite and graphene nanoribbons.” 2014. Web. 23 Sep 2019.

Vancouver:

Yu W. Infrared magneto-spectroscopy of graphite and graphene nanoribbons. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/54244.

Council of Science Editors:

Yu W. Infrared magneto-spectroscopy of graphite and graphene nanoribbons. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/54244

8. Symonds, Joshua M. Development of microplasmas and analysis of complex biomolecules using plasma and synchrotron radiation.

Degree: PhD, Physics, 2014, Georgia Tech

 In this work, a microplasma-based ionization source for ambient mass spectrometry (AMS) has been developed. Optical emission spectroscopy, optical microscopy, and electrical measurements have been… (more)

Subjects/Keywords: Microplasmas; Ambient mass spectrometry

…by the Bio-Imaging Mass Spectrometry Center at Georgia Tech, an NSF CAREER grant 0645094… 

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APA (6th Edition):

Symonds, J. M. (2014). Development of microplasmas and analysis of complex biomolecules using plasma and synchrotron radiation. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52201

Chicago Manual of Style (16th Edition):

Symonds, Joshua M. “Development of microplasmas and analysis of complex biomolecules using plasma and synchrotron radiation.” 2014. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/52201.

MLA Handbook (7th Edition):

Symonds, Joshua M. “Development of microplasmas and analysis of complex biomolecules using plasma and synchrotron radiation.” 2014. Web. 23 Sep 2019.

Vancouver:

Symonds JM. Development of microplasmas and analysis of complex biomolecules using plasma and synchrotron radiation. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/52201.

Council of Science Editors:

Symonds JM. Development of microplasmas and analysis of complex biomolecules using plasma and synchrotron radiation. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/52201

9. Guo, Zelei. Mono-layer C-face epitaxial graphene for high frequency electronics.

Degree: PhD, Physics, 2014, Georgia Tech

 As the thinnest material ever with high carrier mobility and saturation velocity, graphene is considered as a candidate for future high speed electronics. After pioneering… (more)

Subjects/Keywords: SiC; RF; SOI; Epitaxial graphene; High frequency; Maximum oscillation frequency; Dielectric; Top gate; Transistor; Wafer bonding; Smart-cut; Nanoribbon

…pioneering research on graphene-based electronics at Georgia Tech, epitaxial graphene on SiC, along… 

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APA (6th Edition):

Guo, Z. (2014). Mono-layer C-face epitaxial graphene for high frequency electronics. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52268

Chicago Manual of Style (16th Edition):

Guo, Zelei. “Mono-layer C-face epitaxial graphene for high frequency electronics.” 2014. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/52268.

MLA Handbook (7th Edition):

Guo, Zelei. “Mono-layer C-face epitaxial graphene for high frequency electronics.” 2014. Web. 23 Sep 2019.

Vancouver:

Guo Z. Mono-layer C-face epitaxial graphene for high frequency electronics. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/52268.

Council of Science Editors:

Guo Z. Mono-layer C-face epitaxial graphene for high frequency electronics. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/52268

10. Hu, Yike. Production and properties of epitaxial graphene on the carbon terminated face of hexagonal silicon carbide.

Degree: PhD, Physics, 2013, Georgia Tech

 Graphene is widely considered to be a promising candidate for a new generation of electronics, but there are many outstanding fundamental issues that need to… (more)

Subjects/Keywords: Epitaxial graphene; C-face silicon carbide; High mobility FET; Unconventional quantum Hall effect; Schottky barrier transistor; Graphene; Epitaxy; Silicon carbide

…until two independent electrical measurement results were published in 2004. The Georgia Tech… …confinement controlled sublimation method developed at Georgia Tech (de Heer, et al., 2011)… 

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APA (6th Edition):

Hu, Y. (2013). Production and properties of epitaxial graphene on the carbon terminated face of hexagonal silicon carbide. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/48705

Chicago Manual of Style (16th Edition):

Hu, Yike. “Production and properties of epitaxial graphene on the carbon terminated face of hexagonal silicon carbide.” 2013. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/48705.

MLA Handbook (7th Edition):

Hu, Yike. “Production and properties of epitaxial graphene on the carbon terminated face of hexagonal silicon carbide.” 2013. Web. 23 Sep 2019.

Vancouver:

Hu Y. Production and properties of epitaxial graphene on the carbon terminated face of hexagonal silicon carbide. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/48705.

Council of Science Editors:

Hu Y. Production and properties of epitaxial graphene on the carbon terminated face of hexagonal silicon carbide. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/48705

11. Hicks, Jeremy David. A combined top-down/bottom-up route to fabricating graphene devices.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 The purpose of this work is to explore a method that combines both top-down and bottom-up elements to fabricate electronic devices made from graphene, a… (more)

Subjects/Keywords: Graphene; Silicon carbide; ARPES; Surface science; Electronic apparatus and appliances; Carbon nanotubes; Graphite; Semiconductors

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APA (6th Edition):

Hicks, J. D. (2013). A combined top-down/bottom-up route to fabricating graphene devices. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/49100

Chicago Manual of Style (16th Edition):

Hicks, Jeremy David. “A combined top-down/bottom-up route to fabricating graphene devices.” 2013. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/49100.

MLA Handbook (7th Edition):

Hicks, Jeremy David. “A combined top-down/bottom-up route to fabricating graphene devices.” 2013. Web. 23 Sep 2019.

Vancouver:

Hicks JD. A combined top-down/bottom-up route to fabricating graphene devices. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/49100.

Council of Science Editors:

Hicks JD. A combined top-down/bottom-up route to fabricating graphene devices. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/49100

12. Hoang, Tien Manh. Studies of epitaxial graphene and silicon growth on silicon carbide under silane gas.

Degree: PhD, Physics, 2017, Georgia Tech

 Two-dimensional (2D) materials have drawn much attention because of their superior and unique properties. Undoubtedly, the most well-known 2D material is graphene, an atomic-thick sheet… (more)

Subjects/Keywords: Graphene; Silicon carbide; Reconstructions; Step bunching; Auger attenuation model

…60 FE-SEM at Georgia Tech: (left) a picture of the system. (right) at… …Georgia Tech, can produce uniform EG layers with impressive quality [5, 24]. In this… …method at Georgia Tech [25]. 9 Figure 1.6: Crystal structure of 4H- and 6H-SiC… …Georgia Tech research groups since 2002 [51], suppresses silicon sublimation rate by… 

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APA (6th Edition):

Hoang, T. M. (2017). Studies of epitaxial graphene and silicon growth on silicon carbide under silane gas. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58197

Chicago Manual of Style (16th Edition):

Hoang, Tien Manh. “Studies of epitaxial graphene and silicon growth on silicon carbide under silane gas.” 2017. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/58197.

MLA Handbook (7th Edition):

Hoang, Tien Manh. “Studies of epitaxial graphene and silicon growth on silicon carbide under silane gas.” 2017. Web. 23 Sep 2019.

Vancouver:

Hoang TM. Studies of epitaxial graphene and silicon growth on silicon carbide under silane gas. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/58197.

Council of Science Editors:

Hoang TM. Studies of epitaxial graphene and silicon growth on silicon carbide under silane gas. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/58197


Georgia Tech

13. Yi, Yan. Ballistic conduction in multiwalled carbon nanotubes.

Degree: PhD, Physics, 2004, Georgia Tech

 Multiwalled carbon nanotubes (MWNTs) are shown to be ballistic conductors at room temperature, with mean free paths of the order of tens of microns. The… (more)

Subjects/Keywords: Carbon nanotubes; Ballistic; Multiwalled; Nanotubes Design

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APA (6th Edition):

Yi, Y. (2004). Ballistic conduction in multiwalled carbon nanotubes. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/4974

Chicago Manual of Style (16th Edition):

Yi, Yan. “Ballistic conduction in multiwalled carbon nanotubes.” 2004. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/4974.

MLA Handbook (7th Edition):

Yi, Yan. “Ballistic conduction in multiwalled carbon nanotubes.” 2004. Web. 23 Sep 2019.

Vancouver:

Yi Y. Ballistic conduction in multiwalled carbon nanotubes. [Internet] [Doctoral dissertation]. Georgia Tech; 2004. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/4974.

Council of Science Editors:

Yi Y. Ballistic conduction in multiwalled carbon nanotubes. [Doctoral Dissertation]. Georgia Tech; 2004. Available from: http://hdl.handle.net/1853/4974

.