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You searched for +publisher:"Colorado School of Mines" +contributor:("Tamboli, Adele C."). Showing records 1 – 4 of 4 total matches.

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Colorado School of Mines

1. Makoutz, Emily. Process development of nanoimprint lithography for selective area growth of III-V materials on silicon.

Degree: MS(M.S.), Physics, 2018, Colorado School of Mines

 Heteroepitaxy of III-V semiconductors on Si substrates is inherently challenging due to the mismatch of various material properties that lead to the formation of dislocations… (more)

Subjects/Keywords: Nanofabrication; III-V semiconductors; Nanoimprint lithography

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APA (6th Edition):

Makoutz, E. (2018). Process development of nanoimprint lithography for selective area growth of III-V materials on silicon. (Masters Thesis). Colorado School of Mines. Retrieved from http://hdl.handle.net/11124/172040

Chicago Manual of Style (16th Edition):

Makoutz, Emily. “Process development of nanoimprint lithography for selective area growth of III-V materials on silicon.” 2018. Masters Thesis, Colorado School of Mines. Accessed March 22, 2019. http://hdl.handle.net/11124/172040.

MLA Handbook (7th Edition):

Makoutz, Emily. “Process development of nanoimprint lithography for selective area growth of III-V materials on silicon.” 2018. Web. 22 Mar 2019.

Vancouver:

Makoutz E. Process development of nanoimprint lithography for selective area growth of III-V materials on silicon. [Internet] [Masters thesis]. Colorado School of Mines; 2018. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/11124/172040.

Council of Science Editors:

Makoutz E. Process development of nanoimprint lithography for selective area growth of III-V materials on silicon. [Masters Thesis]. Colorado School of Mines; 2018. Available from: http://hdl.handle.net/11124/172040


Colorado School of Mines

2. Crisp, Ryan W. Inorganic surface ligand effects on nanocrystal-based photovoltaic devices.

Degree: PhD, Physics, 2015, Colorado School of Mines

 Colloidal quantum dots (QDs) are very small crystals on the scale of several nanometers in diameter. QDs demonstrate interesting size-related phenomena resulting from quantum confinement… (more)

Subjects/Keywords: CdTe; nanocrystals; PbS; photovoltaics; spectroscopy

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APA (6th Edition):

Crisp, R. W. (2015). Inorganic surface ligand effects on nanocrystal-based photovoltaic devices. (Doctoral Dissertation). Colorado School of Mines. Retrieved from http://hdl.handle.net/11124/166662

Chicago Manual of Style (16th Edition):

Crisp, Ryan W. “Inorganic surface ligand effects on nanocrystal-based photovoltaic devices.” 2015. Doctoral Dissertation, Colorado School of Mines. Accessed March 22, 2019. http://hdl.handle.net/11124/166662.

MLA Handbook (7th Edition):

Crisp, Ryan W. “Inorganic surface ligand effects on nanocrystal-based photovoltaic devices.” 2015. Web. 22 Mar 2019.

Vancouver:

Crisp RW. Inorganic surface ligand effects on nanocrystal-based photovoltaic devices. [Internet] [Doctoral dissertation]. Colorado School of Mines; 2015. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/11124/166662.

Council of Science Editors:

Crisp RW. Inorganic surface ligand effects on nanocrystal-based photovoltaic devices. [Doctoral Dissertation]. Colorado School of Mines; 2015. Available from: http://hdl.handle.net/11124/166662

3. Fioretti, Angela N. Development of zinc tin nitride for application as an earth abundant photovoltaic absorber.

Degree: PhD, Physics, 2018, Colorado School of Mines

 In recent years, many new potential absorber materials based on earth-abundant and non-toxic elements have been predicted. These materials, often made in thin film form… (more)

Subjects/Keywords: Defect physics; Nitrides; Semiconductors; Material development; Combinatorial; Photovoltaics

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APA (6th Edition):

Fioretti, A. N. (2018). Development of zinc tin nitride for application as an earth abundant photovoltaic absorber. (Doctoral Dissertation). Colorado School of Mines. Retrieved from http://hdl.handle.net/11124/172032

Chicago Manual of Style (16th Edition):

Fioretti, Angela N. “Development of zinc tin nitride for application as an earth abundant photovoltaic absorber.” 2018. Doctoral Dissertation, Colorado School of Mines. Accessed March 22, 2019. http://hdl.handle.net/11124/172032.

MLA Handbook (7th Edition):

Fioretti, Angela N. “Development of zinc tin nitride for application as an earth abundant photovoltaic absorber.” 2018. Web. 22 Mar 2019.

Vancouver:

Fioretti AN. Development of zinc tin nitride for application as an earth abundant photovoltaic absorber. [Internet] [Doctoral dissertation]. Colorado School of Mines; 2018. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/11124/172032.

Council of Science Editors:

Fioretti AN. Development of zinc tin nitride for application as an earth abundant photovoltaic absorber. [Doctoral Dissertation]. Colorado School of Mines; 2018. Available from: http://hdl.handle.net/11124/172032

4. Martinez, Aaron D. Zinc silicon phosphide as a wide band gap semiconductor for integration with silicon.

Degree: PhD, Physics, 2017, Colorado School of Mines

 There has been a longstanding need for optically-active materials that can be integrated with Si, both for tandem photovoltaics and for other optoelectronic applications. We… (more)

Subjects/Keywords: Photovoltaics; Silicon; Thin films; Semiconductors; Material science; Tandem photovoltaics

…NREL Colorado School of Mines… …HPM xviii ACKNOWLEDGMENTS My time as a graduate student at the Colorado School of Mines… 

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APA (6th Edition):

Martinez, A. D. (2017). Zinc silicon phosphide as a wide band gap semiconductor for integration with silicon. (Doctoral Dissertation). Colorado School of Mines. Retrieved from http://hdl.handle.net/11124/171189

Chicago Manual of Style (16th Edition):

Martinez, Aaron D. “Zinc silicon phosphide as a wide band gap semiconductor for integration with silicon.” 2017. Doctoral Dissertation, Colorado School of Mines. Accessed March 22, 2019. http://hdl.handle.net/11124/171189.

MLA Handbook (7th Edition):

Martinez, Aaron D. “Zinc silicon phosphide as a wide band gap semiconductor for integration with silicon.” 2017. Web. 22 Mar 2019.

Vancouver:

Martinez AD. Zinc silicon phosphide as a wide band gap semiconductor for integration with silicon. [Internet] [Doctoral dissertation]. Colorado School of Mines; 2017. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/11124/171189.

Council of Science Editors:

Martinez AD. Zinc silicon phosphide as a wide band gap semiconductor for integration with silicon. [Doctoral Dissertation]. Colorado School of Mines; 2017. Available from: http://hdl.handle.net/11124/171189

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